Compositionally graded (CGed) Si(C,N) films were prepared by Ar/H 2/N 2 plasma enhanced chemical vapor deposition from liquid injected hexamethyldisiloxane precursor. The films were characterized by scanning/transmission electron microscopy (SEM/TEM), X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). Monolithic crystalline SiC and amorphous SiN x films were produced from Ar/H 2 and Ar/H 2/N 2 thermal plasma, respectively. The CGed SiC–SiN x film was obtained by changing N 2 flow rate from 2 L/min to zero in Ar/H 2/N 2 during the deposition process, and it was composed of an uppermost crystalline SiC layer, a thin intermediate layer containing nanocomposite c-SiC/a-SiN x and an innermost layer of amorphous SiN x . The CGed SiN x –SiC film, in which SiN x acts as a top layer with a SiC layer underneath, was fabricated by an inverse change of the plasma gas supply from initial Ar/H 2 to Ar/H 2/N 2. Microhardness increase and promising field emission properties were obtained from these CGed films in comparison with monolithic SiC and SiN x films.