Hexagonal Graphene Domains Research Articles

Structure and transport properties of the interface between CVD-grown graphene domains.

During the chemical vapor deposition (CVD) growth of graphene, graphene domains grown on a Cu surface merge together and form a uniform graphene sheet. For high-performance electronics and other applications, it is important to understand the interfacial structure of the merged domains, as well as their influence on the physical properties of graphene. We synthesized large hexagonal graphene domains with controlled orientations on a heteroepitaxial Cu film and studied the structure and properties of the interfaces between the domains mainly merged with the same angle. Although the merged domains have various interfaces with/without wrinkles and/or increased defect-related Raman D-band intensity, the intra-domain transport showed higher carrier mobility reaching 20,000 cm(2) V(-1) s(-1) on SiO2 at 280 K (the mean value was 7200 cm(2) V(-1) s(-1)) than that measured for inter-domain areas, 6400 cm(2) V(-1) s(-1) (mean value 2000 cm(2) V(-1) s(-1)). The temperature dependence of the mobility suggests that impurity scattering dominates at the interface even for the merged domains with the same orientation. This study highlights the importance of domain interfaces, especially on the carrier transport properties, in CVD-grown graphene.

Hydrogen-induced effects on the CVD growth of high-quality graphene structures

In this work, the hydrogen-induced effects on the CVD growth of high-quality graphene have been systematically studied by regulating the growth parameters mainly related to hydrogen. Experimental results demonstrate that under a high hydrogen flow rate, the competitive etching effect during the growth process is more prominent and even shows macroscopic selectivity. Based on these understandings, the hexagonal graphene domains with diverse edge modalities are controllably synthesized on a large scale by elaborately managing the competitive etching effect of hydrogen that existed during the formation of graphene. This study not only contributes to the understanding of the mechanism of CVD growth, especially the effects of hydrogen used in the system, but also provides a facile method to synthesize high-quality graphene structures with trimmed edge morphologies.

Borocarbonitrides, BxCyNz

Various forms of carbon, especially the nanocarbons, have received considerable attention in recent years. There has also been some effort to investigate borocarbonitrides, BxCyNz, comprising besides carbon, the two elements on either side. Although uniformly homogeneous compositions of borocarbonitrides may be difficult to generate, there have been attempts to prepare them by solid state as well as gas phase reactions. Some of the products so obtained show evidence for the presence of BCN networks. Then, there are composites (G-BN) containing hexagonal BN (h-BN) and graphene (G) domains, G1-x(BN)x, in varying proportions. Nanotubes of BxCyNz have been reported by several workers. The borocarbonitrides exhibit some interesting electronic and gas adsorption properties. Thus, some of the preparations show selective CO2 adsorption. They also exhibit excellent characteristics for supercapacitor applications. In order to understand the nature of these understudied materials, it is necessary to examine the results from first-principles calculations. These calculations throw light on the variation in the band gap of G-BN with the concentration of h-BN, for different geometries of the domains and their boundaries. The possibility of formation of Stone-Wales (SW) defects at the interfaces of graphene and h-BN has been studied and the estimates of the formation energies of SW defects at the interfaces are ∼4 to 6 eV. The presence of such defects at the interfaces influences the electronic structure near the band gap and the associated properties. For example, adsorption of CH4 and CO2 occurs with significantly stronger binding at the interfacial defects. © The Royal Society of Chemistry 2013.

Toward the Synthesis of Wafer-Scale Single-Crystal Graphene on Copper Foils

In this research, we constructed a controlled chamber pressure CVD (CP-CVD) system to manipulate graphene's domain sizes and shapes. Using this system, we synthesized large (~4.5 mm(2)) single-crystal hexagonal monolayer graphene domains on commercial polycrystalline Cu foils (99.8% purity), indicating its potential feasibility on a large scale at low cost. The as-synthesized graphene had a mobility of positive charge carriers of ~11,000 cm(2) V(-1) s(-1) on a SiO(2)/Si substrate at room temperature, suggesting its comparable quality to that of exfoliated graphene. The growth mechanism of Cu-based graphene was explored by studying the influence of varied growth parameters on graphene domain sizes. Cu pretreatments, electrochemical polishing, and high-pressure annealing are shown to be critical for suppressing graphene nucleation site density. A pressure of 108 Torr was the optimal chamber pressure for the synthesis of large single-crystal monolayer graphene. The synthesis of one graphene seed was achieved on centimeter-sized Cu foils by optimizing the flow rate ratio of H(2)/CH(4). This work should provide clear guidelines for the large-scale synthesis of wafer-scale single-crystal graphene, which is essential for the optimized graphene device fabrication.

The production of large bilayer hexagonal graphene domains by a two-step growth process of segregation and surface-catalytic chemical vapor deposition

A novel two-step process combining surface catalyzed process with segregation growth was used to prepare single crystal hexagonal bilayer graphene domains on Cu metal substrates by ambient pressure chemical vapor deposition. Carbon atoms are first dissolved into the quasi-melting Cu metal at 1080°C and then segregated on the Cu surface to form nucleation centers of single-layer graphene during cooling. The graphene crystallites spontaneously act as templates to induce the carbon atoms to form hexagonal bilayer graphene domains. The bilayer graphene domains are size-tunable by controlling the growth conditions. The yield of the bilayer graphene is over 90% and the defect-free domains reach ∼100μm in size, greater than the reported single-layer domains.