Hexagonal Boron Nitride Layers Research Articles

Highly Sustainable h-BN Encapsulated MoS2 Hydrogen Evolution Catalysts.

Despite the importance of the stability of the 2D catalysts in harsh electrolyte solutions, most studies have focused on improving the catalytic performance of molybdenum disulfide (MoS2) catalysts rather than the sustainability of hydrogen evolution. In previous studies, the vulnerability of MoS2 crystals is reported that the moisture and oxygen molecules can cause the oxidation of MoS2 crystals, accelerating the degradation of crystal structure. Therefore, optimization of catalytic stability is crucial for approaching practical applications in 2D catalysts. Here, it is proposed that monolayered MoS2 catalysts passivated with an atomically thin hexagonal boron nitride (h-BN) layer can effectively sustain hydrogen evolution reaction (HER) and demonstrate the ultra-high current density (500mAcm⁻2 over 11 h) and super stable (64 h at 150mAcm⁻2) catalytic performance. It is further confirmed with density functional theory (DFT) calculations that the atomically thin h-BN layer effectively prevents direct adsorption of water/acid molecules while allowing the protons to be adsorbed/penetrated. The selective penetration of protons and prevention of crystal structure degradation lead to maintained catalytic activity and maximized catalytic stability in the h-BN covered MoS2 catalysts. These findings propose a promising opportunity for approaching the practical application of 2D MoS2 catalysts having long-term stability at high-current operation.

Floating-gate memristor based on a MoS2/h-BN/AuNPs mixed-dimensional heterostructure

Memristors have recently received substantial attention because of their promising and unique emerging applications in neuromorphic computing, which can achieve gains in computation speed by mimicking the topology of the brain in electronic circuits. Traditional memristors made of bulk MoO3 and HfO2, for example, suffer from a low switching ratio and poor durability and stability. In this work, a floating-gate memristor is developed based on a mixed-dimensional heterostructure comprising two-dimensional (2D) molybdenum disulfide (MoS2) and zero-dimensional (0D) Au nanoparticles (AuNPs) separated by an insulating hexagonal boron nitride (h-BN) layer (MoS2/h-BN/AuNPs). We find that under the modulation of back-gate voltages, the MoS2/h-BN/AuNPs device operates reliably between a high-resistance state (HRS) and a low-resistance state (LRS) and shows multiple stable LRS states, demonstrating the excellent potential of our memristor in multibit storage applications. The modulation effect can be attributed to electron quantum tunneling between the AuNP charge-trapping layer and the MoS2 channel. Our memristor exhibits excellent durability and stability: the HRS and LRS are retained for more than 104 s without obvious degradation and the on/off ratio is >104 after more than 3000 switching cycles. We also demonstrate frequency-dependent memory properties upon stimulation with electrical and optical pulses.

Excited States of Excitons in MoSe2 and WSe2 Monolayers

Excitons in MoSe2 and WSe2 monolayers encapsulated with hexagonal boron nitride have been studied using optical reflectance spectroscopy. The ground and excited states of A- and B-excitons have been studied at temperatures from liquid helium to room temperature. The lines of excitons A:\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$1s$$\\end{document}, B:\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$1s$$\\end{document} and their excited states А:\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$2s$$\\end{document}, А:\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$3s$$\\end{document}, and В:\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$2s$$\\end{document} are clearly observed in the reflectance spectrum. The observed line shapes of the reflection spectrum of transition metal dichalcogenide monolayers depend on the thickness of the hexagonal boron nitride layers used in the structure and are in good agreement with the numerical simulation using the transfer matrix method. For the first time, the values of the reduced masses of B-excitons have been obtained from experimental data and the performed calculations of the exciton binding energy.

Large-Scale Statistical Analysis of Defect Emission in hBN: Revealing Spectral Families and Influence of Flake Morphology.

Quantum emitters in two-dimensional layered hexagonal boron nitride are quickly emerging as a highly promising platform for next-generation quantum technologies. However, the precise identification and control of defects are key parameters to achieve the next step in their development. We conducted a comprehensive study by analyzing over 10,000 photoluminescence emission lines from liquid exfoliated hBN nanoflake samples, revealing 11 narrow sets of defect families within the 1.6 to 2.2 eV energy range. This challenges hypotheses of a random energy distribution. We also reported averaged defect parameters, including emission line widths, spatial density, phonon side bands, and Franck-Condon-related factors. These findings provide valuable insights into deciphering the microscopic origin of emitters in hBN hosts. We also explored the influence of the hBN host morphology on defect family formation, demonstrating its crucial impact. By tuning the flake size and arrangement, we achieve selective control of defect types while maintaining high spatial density. This offers a scalable approach to defect emission control, diverging from costly engineering methods. It emphasizes the significance of the morphological aspects of hBN hosts for gaining insights into defect origins and expanding their spectral control.

The Growth Mechanism of Layered Hexagonal Boron Nitride Crystal on Copper Foil

Abstract2D hexagonal boron nitride (h‐BN), which has a similar honeycomb lattice structure to graphene, is a promising dielectric material for a wide variety of applications. Herein, the growth of high‐quality and large‐size multilayer h‐BN crystals on Cu foils is reported by chemical vapor deposition (CVD) at atmospheric pressure. The size of an individual isolated hexagonal crystal of h‐BN is about 20 µm, and the thickness is 3 nm. This paper studies the variables that affect h‐BN growth during the process and the microstructure changes during the growth. Through analysis of the thermal and dynamic processes of chemical vapor deposition, relationships are derived between the mass of h‐BN grown in the gas phase and various temperature and pressure factors. This information is used to develop appropriate parameters for commercial copper foil growth. Finally, using optimized conditions, high‐quality h‐BN at high pressure and low gas flow conditions are grown.

Full phonon dispersion along the stacking direction in nanoscale van der Waals materials by picosecond acoustics

Phonon dispersion in crystals determines many important material properties, but its measurement usually requires large-scale facilities and is limited to bulk samples. Here, we demonstrate the measurement of full phonon dispersion along the stacking direction in nanoscale systems by using picosecond acoustics. A heterostructure sample was prepared consisting of layers of hexagonal boron nitride (hBN) sandwiching a thin layer of black phosphorus (BP), within which a strain pulse was generated by photoexcitation and observed with an optical probe in the BP layer. The strain pulse traverses to the few nanometer thick hBN layers, where it propagates to the edge and echoes back, like acoustic waves in Newton’s cradle. The echoes returning to the BP layer provide information on the frequency-dependent time-of-flight and group velocity dispersion of the sample system. The microscopic origin of the photoinduced strain pulse generation and its propagation is revealed from first principles. Phonon frequency combs observed in the Fourier transform spectrum confirm the strain wave round trips and demonstrate the feasibility of determining group velocity dispersion through photoacoustics.

Membrane hybrid system assembled with MXene@h-BN for efficient typical pharmaceuticals removal and self-cleaning: Synergetic effect on adsorption-photocatalytic process

Membrane filtration is regarded as one of the promising technologies for water treatment. However, insufficient micropollutants removal and membrane fouling still limited the further application. Herein, this study engineered a novel membrane hybrid system integrating typical pharmaceuticals removal and membrane self-cleaning by assembled layered MXene and hexagonal boron nitride (h-BN). By doping a small amount of MXene into h-BN (mass ratio of 1 to 10), the synergetic process of adsorption and photocatalytic degradation were achieved. Based on experimental and density functional theory (DFT) calculation results, the chemisorption-photodegradation performance of the membrane hybrid system assembled with 1/10 MXene@h-BN was significantly enhanced due to the termination group and conductive property of MXene. In addition, trimethoprim (TMP) degradation by the above membrane followed the Langmuir–Hinshelwood model, indicating pollutants removal initiated not only on the membrane surface but also in the bulk solution under simulated solar irradiation. This phenomenon was attributed to the generation of •OH and 1O2 by forming Ohmic contact with altered internal band structure. The durability and practical experiments with secondary effluent from local wastewater treatment were also tested. The exceptional self-cleaning performance of the membrane hybrid system assembled with 1/10 MXene@h-BN was demonstrated by lower membrane fouling and maintaining durability even after five cycles. Furthermore, the performance (both pollutants removal and flux) of the modified membrane for secondary effluent treatment was also considerable, validating its potential for practical application. Owing to the excellent features, the membrane assembled with MXene@h-BN is anticipated to be an ideal candidate for advanced wastewater treatment.

Single-Photon Emitters inside Bubbles Formed at Homointerfaces between Hexagonal Boron Nitride Layers

Single-Photon Emitters inside Bubbles Formed at Homointerfaces between Hexagonal Boron Nitride Layers

Optical detection of passive thermal lattice deformation of monolayer WS2 in van der Waals heterostructures of WS2/h-BN

Van der Waals heterostructures (vdWHs) of the constituent two-dimensional (2D) layered materials are quickly emerging as functional structures for diverse novel electronic and optoelectronic devices. To further explore the device applications of the vdWHs, an open question, which is whether the lattice of atomic thin active layer follows the deformation of its neighboring thick layers in a vdWH, needs to be clarified. Herein, the thermal deformation of WS2 monolayers in vdWHs with and without hexagonal boron nitride (h-BN) layers on SiO2/Si substrates is investigated with combined optical spectroscopies of photoluminescence (PL) and Raman scattering. With a developed strategy extracting the pure strain-induced effects from the temperature-dependent PL and Raman scattering spectroscopic results, the relative deformations of the WS2 monolayers and the h-BN layers with respect to the substrate have been identified. Both the Raman and PL results consistently reveal that the lattice variation of the WS2 monolayers passively match the deformation of the h-BN layers, and the WS2 monolayer on the SiO2/Si substrate exhibits the largest strain. These findings have not only demonstrated the passive behavior of the thermal strain of 2D semiconductor monolayers in vdWHs heterostructures, but also paved a way to tailor the thermal strain via designing and constructing vdWHs.

Distance Dependence of the Energy Transfer Mechanism in WS_{2}-Graphene Heterostructures.

We report on the mechanism of energy transfer in Van der Waals heterostructures of the two-dimensional semiconductor WS_{2} and graphene with varying interlayer distances, achieved through spacer layers of hexagonal boron nitride (h-BN). We record photoluminescence and reflection spectra at interlayer distances between 0.5 and 5.8nm (0-16 h-BN layers). We find that the energy transfer is dominated by states outside the light cone, indicative of a Förster transfer process, with an additional contribution from a Dexter process at 0.5nm interlayer distance. We find that the measured dependence of the luminescence intensity on interlayer distances above 1nm can be quantitatively described using recently reported values of the Förster transfer rates of thermalized charge carriers. At smaller interlayer distances, the experimentally observed transfer rates exceed the predictions and, furthermore, depend on excess energy as well as on excitation density. Since the transfer probability of the Förster mechanism depends on the momentum of electron-hole pairs, we conclude that, at these distances, the transfer is driven by nonrelaxed charge carrier distributions.

Highly Thermally Conductive Flexible Biomimetic APTES-BNNS/BC Nanocomposite Paper by Sol-Gel-Film Technology.

Owing to the evolution of 5G technology, new energy vehicles, flexible electronics, miniaturization and integration of microelectronic devices, high-frequency and high-power devices, and thermal management of materials must consider additional limitations such as electrical insulation, excellent transverse heat transfer, flexibility, and weight. Boron nitride nanosheets (BNNSs) are ideal insulating materials with high thermal conductivity. However, the problem of the 3D thermal conductivity pathway and toughness strength of nanocomposite paper loaded with inorganic thermal conductivity fillers remains a huge challenge. In this study, we propose a new method for preparing ultrathin, large, and uniformly thick BNNS for quantitative production. Bulk hexagonal boron nitride (hBN) layers were exfoliated using a simple and low-cost hydrothermal reaction, and large-scale fewer-layered BNNSs were efficiently prepared by ball milling with a high yield (up to 80%). Based on the aforementioned step, a flexible insulating composite film with high thermal conductivity and a natural "brick-mud" shell structure was constructed via the sol-gel-film conversion method. After prestretching and hot-pressing treatment, the hydrogels became denser, and the modified BNNS formed a three-dimensional (3D) network structure with an ordered orientation and interconnections in the bacterial cellulose (BC) matrix. After 100 folding cycles, the tensile strength of the nanofiber composite film reached 53 MPa, and the strength retention rate exceeded 42%. By optimizing the modified BNNS content, the thermal conductivity reached 24 W/(m·K). This simple approach has wide application potential in the next-generation electronic devices, providing options for designing thermal interface materials with excellent electrical insulation, high thermal stability, and flexibility.

Photo‐Induced Electrical Gating with the Inserting of an Interfacial Carrier Blocking Layer for Organic/Graphene Phototransistors

AbstractAlthough ultrahigh photoconductive gain is achieved in organic semiconductor‐sensitized graphene phototransistors, the response speed is limited by the photo‐induced carrier injection at the organic/graphene interface. In this work, an insulating hexagonal boron nitride layer is inserted between the organic heterostructure and graphene to block the interfacial carrier transport. Above the h‐BN layer, the organic heterostructure is adopted as the light‐absorbing layer, and the photoresponse of graphene is realized through electrical gating of the atop h‐BN dielectric layer, by the accumulated carriers in the organic heterostructure. Under this “photo‐induced electrical gating” mechanism, the recombination of nonequilibrium carriers takes place only within the organic heterostructure. Furthermore, monolayer perylene‐3,4,9,10‐tetracarboxylic dianhydride (PTCDA) is deposited on graphene before transfer of the h‐BN, by which the interfacial encapsulated bubbles are effectively reduced. As a step further, the trap states are pre‐filled with background light illumination, then the carrier recombination follows the band‐to‐band pathway. Finally, the response time of the organic/h‐BN/graphene phototransistor is reduced to 7.15 ms, and a high photoresponsivity is achieved even though the carrier multiplication is sacrificed, which is reconciled by the improvement of the device quantum efficiency.

The impact of hBN layers on guided exciton–polariton modes in WS2 multilayers

Abstract Guided exciton–polariton modes naturally exist in bare transition metal dichalcogenide (TMDC) layers due to self-hybridization between excitons and photons. However, these guided polariton modes exhibit a limited propagation distance owing to the substantial exciton absorption within the material. Here, we investigated the impact of hexagonal boron nitride (hBN) layers on guided exciton–polariton modes in WS2 multilayers. By integrating hBN layers, we demonstrate a notable enhancement in the quality of guided exciton–polariton modes. The hBN layers can reduce substrate surface roughness and provide surface protection for the WS2 layer, mitigating inhomogeneous broadening of the exciton resonance. Consequently, we experimentally observed that the propagation distance of polariton modes substantially increased with hBN layers. Additionally, the polariton spectrum broadened due to efficient exciton relaxation to the polariton states at lower energies. Comparison with simulation data emphasizes that the observed improvements are primarily attributed to enhanced exciton quality. The promising outcomes with hBN encapsulation suggest its potential to overcome strong excitonic losses of the guided exciton polariton in implementing nanophotonic devices. Furthermore, this approach provides a new avenue for exploring the novel physics of guided exciton–polariton modes and their potential applications in polariton-based all-optical integrated circuits.

Ultra-thin van der Waals magnetic tunnel junction based on monoatomic boron vacancy of hexagonal boron nitride.

We present a novel strategy to create a van der Waals-based magnetic tunnel junction (MTJ) comprising a three-atom layer of graphene (Gr) sandwiched with hexagonal boron nitride (hBN) layers by introducing a monoatomic boron vacancy in each hBN layer. The magnetic properties and electronic structure of the system were investigated using density functional theory (DFT) and the transmission probability of the MTJ was investigated using the Landauer-Büttiker formalism within the non-equilibrium Green function method. The Stoner gap was created between the spin-majority channel and the spin-minority channel on the local density of states of the hBN monoatomic boron-vacancy (VB) near the Fermi energy, creating a possible control of the spin valve by considering two magnetic alignment of hBN(VB) layers, anti-parallel configuration (APC) and parallel configuration (PC). The transmission probability calculation results showed a high electron transmission in the PC of the hBN(VB) layers and a low transmission when the APC was considered. A high tunneling magnetoresistance (TMR) ratio of approximately 400% was observed when comparing the APC and PC of the hBN(VB) layers in hBN(VB)/Gr/hBN(VB), giving the highest TMR ratio for the thinnest MTJ system.

Anisotropic thermo-mechanical response of layered hexagonal boron nitride and black phosphorus: application as a simultaneous pressure and temperature sensor.

Hexagonal boron nitride (hBN) and black phosphorus (bP) are crystalline materials that can be seen as ordered stackings of two-dimensional layers, which lead to outstanding anisotropic physical properties. Knowledge of the thermal equations of state of hBN and bP is of great interest in the field of 2D materials for a better understanding of their anisotropic thermo-mechanical properties and exfoliation mechanism towards the preparation of important single-layer materials like hexagonal boron nitride nanosheets and phosphorene. Despite several theoretical and experimental studies, important uncertainties remain in the determination of the thermoelastic parameters of hBN and bP. Here, we report accurate thermal expansion and compressibility measurements along the individual crystallographic axes, using in situ high-temperature and high-pressure high-resolution synchrotron X-ray diffraction. In particular, we have quantitatively determined the subtle variations of the in-plane and volumetric thermal expansion coefficients and compressibility parameters by subjecting these materials to hydrostatic conditions and by collecting a large number of data points in small pressure and temperature increments. In addition, based on the anisotropic behavior of bP, we propose the use of this material as a sensor for the simultaneous determination of pressure and temperature in the range of 0-5 GPa and 298-1700 K, respectively.

High Gain Graphene Based Hot Electron Transistor with Record High Saturated Output Current Density

AbstractHot electron transistors (HETs) represent an exciting new device for integration into semiconductor technology, holding the promise of high‐frequency electronics beyond the limits of SiGe bipolar hetero transistors. With the exploration of 2D materials such as graphene and new device architectures, hot electron transistors have the potential to revolutionize the landscape of modern electronics. This study highlights a novel hot electron transistor structure with a record output current density of 800 A cm−2 and a high current gain α, fabricated using a scalable fabrication approach. The hot electron transistor structure comprises 2D hexagonal boron nitride and graphene layers wet transferred to a germanium substrate. The combination of these materials results in exceptional performance, particularly in terms of the highly saturated output current density. The scalable fabrication scheme used to produce the hot electron transistor opens up opportunities for large‐scale manufacturing. This breakthrough in hot electron transistor technology holds promise for advanced electronic applications, offering high current capabilities in a practical and manufacturable device.

Generalized Mie Theory for Full‐Wave Numerical Calculations of Scattering Near‐Field Optical Microscopy with Arbitrary Geometries

Scattering‐type scanning near‐field optical microscopy (s‐SNOM) is becoming a premier method for the nanoscale optical investigation of materials well beyond the diffraction limit. A number of popular numerical methods exist to predict the near‐field contrast for axisymmetric configurations of scatterers on a surface in the quasi‐electrostatic approximation. Here, a fully electrodynamic approach is given for the calculation of near‐field contrast of several scatterers in arbitrary configuration, based on the generalized Mie scattering method. Examples for the potential of this new approach are given by showing the coupling of hyperbolic phonon polaritons in hexagonal boron nitride (hBN) layers and showing enhanced scattering in core–shell systems. In general, this method enables the numerical calculation of the near‐field contrast in a variety of strongly resonant scatterers and is able to accurately recreate spatial near‐field maps.

Phonon Thermal Transport at Interfaces of a Graphene/Vertically Aligned Carbon Nanotubes/Hexagonal Boron Nitride Sandwiched Heterostructure

Molecular dynamics simulation is used to calculate the interfacial thermal resistance of a graphene/carbon nanotubes/hexagonal boron nitride (Gr/CNTs/hBN) sandwiched heterostructure, in which vertically aligned carbon nanotube (VACNT) arrays are covalently bonded to graphene and hexagonal boron nitride layers. We find that the interfacial thermal resistance (ITR) of the Gr/VACNT/hBN sandwiched heterostructure is one to two orders of magnitude smaller than the ITR of a Gr/hBN van der Waals heterostructure with the same plane size. It is observed that covalent bonding effectively enhances the phonon coupling between Gr and hBN layers, resulting in an increase in the overlap factor of phonon density of states between Gr and hBN, thus reducing the ITR of Gr and hBN. In addition, the chirality, size (diameter and length), and packing density of sandwich-layer VACNTs have an important influence on the ITR of the heterostructure. Under the same CNT diameter and length, the ITR of the sandwiched heterostructure with armchair-shaped VACNTs is higher than that of the sandwiched heterostructure with zigzag-shaped VACNTs due to the different chemical bonding of chiral CNTs with Gr and hBN. When the armchair-shaped CNT diameter increases or the length decreases, the ITR of the sandwiched heterostructure tends to decrease. Moreover, the increase in the VACNT packing density also leads to a continuous decrease in the ITR of the sandwiched heterostructure, attributed to the extremely high intrinsic thermal conductivity of CNTs and the increase of out-of-plane heat transfer channels. This work may be helpful for understanding the mechanism for ITR in multilayer vertical heterostructures, and provides theoretical guidance for a new strategy to regulate the interlayer thermal resistance of heterostructures by optimizing the design of sandwich layer thermal interface materials.

Germanium surface cleaning and ALD of a protective boron nitride overlayer

Germanium exhibits superior hole and electron mobility compared with silicon, making it a promising candidate for replacement of silicon in certain future CMOS applications. In such applications, achieving atomically clean Ge surfaces and the subsequent deposition of ultrathin passivation barriers without interfacial reaction are critical. In this study, we present in situ x-ray photoelectron spectroscopy (XPS) investigations of hydrocarbon removal from the Ge surface utilizing atomic oxygen at room temperature, as well as removal of hydrocarbons and of germanium oxide (GeO2) through atomic hydrogen treatment at 350 °C. Subsequently, atomic layer deposition (ALD) was used to create a protective layer of hexagonal boron nitride (h-BN) with an average thickness of 3 monolayers (ML). Tris(dimethylamino)borane and ammonia precursors were utilized at 450 °C for the deposition process. Intermittent in situ XPS analysis during ALD confirmed h-BN growth, stoichiometry, and the absence of interfacial reaction with Ge. XPS analysis after subsequent exposure of the Ge film with a h-BN overlayer of ∼9 Å average thickness to 7.2 × 104 l of atomic O (O3P) at room temperature yielded no evidence of Ge oxidation, with only the surface layer of the h-BN film exhibiting oxidation. These results present a practical and scalable route toward the preparation of clean Ge surfaces and subsequent deposition of protective, nanothin h-BN barriers for subsequent processing.

Nonconductive layered hexagonal boron nitride preparation via a co-exfoliation strategy and nanohybrid coating construction for corrosion protection

Hexagonal boron nitride (h-BN), an analogue of graphene with similar layered structure, is considered as the promising material in place of graphene for application as nanofiller into polymeric matrices to develop the smart coatings for corrosion protection of metallic substrates, owing to its mechanical robustness and thermal stability together with unique electrically insulating nature. In this work, on the basis of a co-exfoliation strategy, h-BN were exfoliated by riboflavin sodium phosphate (FMN) intercalator, assisted with ball-milling to obtain few-layered nanosheets with improved water-dispersibility as well as improve their compatibility with waterborne epoxy matrix. The results from electrochemical measurement and corrosion product analysis indicate that the incorporation of only 1.0 wt% FMN-exfoliated h-BN (h-BN@FMN nanohybrids) content into waterborne epoxy matrix can realize the optimized long-term corrosion resistance of composite coatings in 3.5 wt% NaCl solution. The two-dimensional morphology and impenetrability of h-BN, together with the compatibility of waterborne epoxy system from the bridge role of FMN molecules to act as a physical barrier against corrosive species (i.e., H2O, Cl− and O2), are the main reasons behind the prominent anticorrosion performance of our composite coating.