A review of the recent work on InP is presented, covering the following properties of this material: bandstructure, electrical transport, lattice dynamics, optical properties, surface properties, thermodynamic properties, and point defects. Preparation techniques are discussed, including synthesis and bulk crystal growth, liquid phase epitaxy of InP and Ga(x)In(1-x)P(y)As(1-y), and chemical vapor deposition. Finally, applications of InP in microwave devices, light-emitting diodes and heterostructure lasers, photodiodes, photocathodes, and solar cells are described.