Photoionization efficiency curves for molecular ions P/sup +/ and lowest energy fragments (P--CH/sub 3/)/sup +/ for the series of methyl and fluoro substituted silanes (CH/sub 3/)/sub n/F/sub 4-n/Si (n = 1-4) are reported for photon energy ranges extending from 1 to 2 eV above the respective parent thresholds. Adiabatic ionization potentials of 9.80 +- 0.03, 10.31 +- 0.04, 11.03 +- 0.03, and 12.48 +- 0.04 eV are determined for (CH/sub 3/)/sub 4/Si, (CH/sub 3/)/sub 3/SiF, (CH/sub 3/)/sub 2/SiF/sub 2/, and CH/sub 3/SiF/sub 3/, respectively, with appearance thresholds of 10.03 +- 0.04, 10.70 +- 0.04, 11.70 +- 0.03, and 13.33 +- 0.04 eV for siliconium ion fragments (CH/sub 3/)/sub 3/Si/sup +/, (CH/sub 3/)/sub 2/FSi/sup +/, (CH/sub 3/)F/sub 2/Si/sup +/, and F/sub 3/Si/sup +/ arising from CH/sub 3/ loss. These data are interpreted in terms of the thermochemistry of the various ionic and neutral silicon species. Derived heats of formation afford accurate calculation of fluoride affinities (heterolytic bond dissociation energies, D(R/sub 3/Si/sup +/--F/sup -/)) of 219.5, 237.3, 258.4, and 302.0 kcal/mol for the siliconium ions (CH/sub 3/)/sub 3/Si/sup +/, (CH/sub 3/)/sub 2/FSi/sup +/, (CH/sub 3/)F/sub 2/Si/sup +/, and F/sub 3/Si/sup +/, respectively. These values are 30 to 50 kcal/mol higher than themore » analogous carbonium ions.« less