Hole Height Research Articles

High-Performance Germanium pMOSFETs With NiGe Metal Source/Drain Fabricated by Microwave Annealing

A microwave annealing technique has been developed to fabricate superior NiGe/n-Ge Schottky junctions. The impacts of the microwave conditions on the electrical properties of NiGe/n-Ge Schottky junctions have been systematically investigated. It is found that the Schottky-barrier height for holes is significantly reduced to 0.03 eV, attributable to the suppression of metal-induced gap states-induced Fermi level pinning effect. As a result, the junction leakage of the NiGe metal source/drain (S/D) has been sufficiently reduced. An enhanced on current and a record high on/off ratio of $10^{4}$ were achieved in the high-performance Schottky-barrier Ge pMOSFETs with a NiGe metal S/D formed by microwave annealing.

Internal limiting membrane translocation for refractory macular holes

Closure is more difficult to achieve in macular holes that remain open following a previous unsuccessful pars plana vitrectomy (PPV). We present our results with the internal limiting membrane (ILM) translocation technique that is used to optimise outcomes in refractory macular holes. A prospective, interventional, case series was conducted. 12 eyes of 12 consecutive patients with incomplete sealing of the macular hole (open and type 2 closure) after a previous PPV with ILM peeling were included. Measured baseline parameters included best-corrected visual acuity (BCVA) and macular hole smallest diameter, base diameter and height. Surgeries were performed by harvesting a fragment of the ILM near the vascular arcades and subsequently placing it inside the hole. Postoperative measured outcomes included macular hole status, foveal contour, outer retina integrity, BCVA and surgery-related complications. Anatomic closure occurred in 11 of 12 eyes (91%). This technique elicited a statistically significant improvement in BCVA (p=0.008). Mean BCVA was 20/400 at study baseline and 20/160 at final follow-up. However, less than 16.7% of cases had a final BCVA of ≥20/63. The ILM translocation technique seems to facilitate persistent idiopathic macular hole closure, where primary surgery with PPV and ILM peeling failed.

Enhanced saturation current sensitivities to charge trapping and illumination in MOS tunnel diode by inserting metal in gate dielectric

The enlarged two-state phenomenon in the current–voltage (I–V) characteristic of metal–oxide–semiconductor (MOS) tunnel diode (TD) after negative/positive constant voltage stress (negative/positive CVS) was investigated. It was found that the reverse saturation tunnel current of MOS TD is proportional to the Schottky barrier height of holes, which is determined by the intensity of fringing field (FF) at device edge. With the aid of high permittivity dielectric and screening effect by embedded metal in the MOS structure, the FF was enhanced, which was confirmed by TCAD simulations. Because of the FF enhancement, after proper electrical treatments of voltage stressing, the intensified quantity of electron trapping/de-trapping was found at device edge, which augmented the modulation of Schottky barrier height of holes. As a result, much variation of reverse saturation tunnel current was exhibited, and hence, the enlarged two-state behavior was achieved. The endurance characteristics were also demonstrated to show that the trapped electrons are more stable in the MOS structure with embedded aluminum. Moreover, benefited from FF enhancement, the enlarged photosensitivity of the I–V characteristics of the sample with high permittivity dielectric and embedded aluminum was obtained. The mechanisms of the enlarged split of current behaviors after suitable CVS and illumination treatments are also discussed for these observations.

Design of Hole-Blocking and Electron-Blocking Layers in AlxGa1-xN-Based UV Light-Emitting Diodes

The band-engineered structure design for electron-blocking layer (EBL) and hole-blocking layer (HBL) in Al x Ga1– x N-based ultraviolet light-emitting diodes (UV LEDs) is performed and analyzed theoretically. Simulation results show that the severe polarization effect is efficiently mitigated and the downward-bended band profile of the EBL is improved when the EBL is designed with a graded-composition and multiquantum barrier (GMQB) structure. As a result, the capabilities of both electron confinement and hole injection, and also the light output power are promoted. On the contrary, for the HBL, the design of composition graded and/or multiquantum barrier structures reduces the effective potential barrier height for holes in the valence band and, consequently, causes a considerable hole overflow. The UV LED, thus, exhibits superior optical performance when the LED structure is simultaneously designed with a GMQB EBL and a bulk HBL.

Stability Behavior of Perforated Lipped Channel Columns

Taking the cold-formed thin-walled perforated lipped channels with simple edge stiffeners and complex edge stiffeners as research objects. The influence of perforated parameters, such as hole width, hole height, hole shape and hole spacing, on axial compressive bearing capacity and buckling mode of these two types of lipped channels were studied by finite element analysis. It shows that the change of hole width, hole shape and hole spacing may change the buckling mode, but influence little on ultimate bearing capacity within a reasonable perforated range; However, it indicates that the ultimate bearing capacity decreased obviously with the opening height increased. The suggestions on reasonable hole shape and hole size were put forward. Furthermore, combined the direct strength method of lipped perforated channels under axial compression abroad with the relevant specification of our country, the direct strength method of lipped perforated channel columns for our country were put forward also. Then, the methods mentioned above were extended to calculate the ultimate bearing capacity of perforated channels with complex edge stiffeners under axial compression, and the validity of the formulas was verified.

Selection of dry drilling parameters for minimal burr size and desired drilling quality

The drilling of metals produces undesired raised material which is defined as burr. It is important to minimize the burr size by modifying the drill geometry or selection of drilling parameters. Although, selection of optimal drilling parameters can be minimize the burr size, but it may be increases the overcut or decreases the material removal rate (MRR). In this paper, drilling parameters have been selected for minimal burr size and desired overcut and MRR. Four adaptive neuro fuzzy inference system (ANFIS) models have been designed based on experimental observation in drilling of copper. Outputs of ANFIS models are burr height, burr thickness, burr type and overcut of hole; While input parameters of drilling process are cutting speed, tool diameter and ratio of feed rate to diameter. Then the particle swarm optimization method has been used to select the optimum condition of input parameters to minimize the burr size in desired value of overcut and MRR. Results showed that the proposed models can be predict the outputs well and they can be used as adequate predictors and optimizer for achieving the drilling parameters which gives a type of burr with low value of burr height and burr thickness with desirable overcut and MRR.

The Advantages of AlGaN-Based Ultraviolet Light-Emitting Diodes With Al Content Graded AlGaN Barriers

A novel five-period AlGaN/AlGaN multiple quantum wells light-emitting diodes (LEDs) structure with Al content graded AlGaN barriers is designed in order to improve the electrical and optical performance of ultraviolet LEDs (UV-LEDs), and the effects are analyzed by using the APSYS simulation programs. The results show that the effective potential height for electrons is increased, and simultaneously the effective potential height for holes is decreased with the increased number of graded AlGaN barriers, which contributes to less electron leakage and better hole injection efficiency. Thus, the internal quantum efficiency and light output power are significantly improved, and the efficiency droop is also mitigated effectively as the number of graded AlGaN barriers increases. However, there is an undesired peak emission in the last barrier when it is replaced by the graded AlGaN barrier.

Negative Gate Transconductance in MIS Tunnel Diode Induced by Peripheral Minority Carrier Control Mechanism

Negative gate transconductance (NGT) has been demonstrated in various devices like gated resonant tunneling devices, modulation doped FETs, and gate/source overlapped heterojunction tunnel FETs, and has been used for ultra-high frequency filters, multi-level logics, and phase encoder applications. [1] In this work, NGT is also observed in a metal-insulator-semiconductor (MIS) tunnel diode. The current of an MIS tunnel diode is very sensitive to surrounding signals. Therefore, MIS tunnel diodes have been used as solar cells and sensing devices. It was found that the saturation current of the MIS tunnel diode is mainly flowing along the edge of the device due to the fringing field effect. [2] Also, it was found that the saturation current increases with oxide thickness. [3] It was believed that the saturation current is dominated by the Schottky diode reverse­­­-bias current, the thicker the oxide, the lower the effective Schottky barrier height, and therefore the current is larger. In previous studies [3], it was also observed that the saturation current of the MIS tunnel diode may increase with increasing light intensity or temperature. It was attributed to that the light or temperature would change the minority carriers distribution profile at the fringe of the device. The lateral diffusion current of minority carriers is therefore changed, which affects the effective Schottky barrier height and the current at device edge. In this work, the edge Schottky diode current of an MIS tunnel diode, Al/2.2 nm SiO2/Si(p), controlled by the gate voltage of a nearby MIS tunnel gate capacitor (with the same structure as the MIS tunnel diode, but it functions as a gate capacitor with ultra-thin oxide) is demonstrated. Figure 1 shows the schematic diagrams of the fabricated MIS tunnel diode (the inner circle device) with an MIS tunnel gate capacitor (the ring device) nearby. Figure 2(a) shows the measured MIS tunnel diode saturation currents (ID ) versus the gate voltages of the MIS tunnel gate capacitor (VG ). NGT in ID is observed. Note that the valley of the kink matches the flat-band region of the MIS tunnel gate capacitor. Figure 2(b) shows the TCAD simulation of the electron concentration at the gate edge, ngap (x=0), versus VG while VD =3 V. Similar behavior to NGT is also observed, which evokes the correlation between the ngap and ID . Figure 3 shows the schematic diagrams of the mechanism of how VG affects ID . Note that larger gradient of ngap at drain depletion region edge (x=S *) leads to larger lateral diffusion flux of electrons, F e-, which lowers the effective Schottky barrier height of holes, φ h , at the edge of MIS tunnel diode, and increases ID (≈Ih , the Schottky diode current of holes). In short, ID increases with the gradient of ngap (x=S *). The gradient of ngap (x=S *) is changed as follows: (a) While VG is in accumulation region, the gate electrons (ninj ) inject into the Si substrate due to the quantum tunneling effect, which increases the ngap (x=0) and the gradient of ngap . (b) While VG is in flat-band region, the electron injection decreases due to the lower electric field, which decreases the ngap (x=0) and the gradient of ngap . (c) While VG is in depletion region, the depletion region comes out and the inversion charge, ninv , rises, which increases the gradient of ngap . (d) While biasing VG further positive, the electrons at the gap are attracted toward the gate by the substrate electric field at gate edge, ε s,edge , and then the electrons tunnel to the gate metal, which decreases the ngap (x=Wdep ) and the gradient of ngap . The NGT mechanism in ID is therefore concluded. This work was supported by the Ministry of Science and Technology of Taiwan, ROC, under Contract No. NSC 102-2221-E-002-183-MY3 and MOST 103-2622-E-002-031. Figure Captions: Figure 1. Schematic diagrams of the fabricated device structure. Figure 2. (a) MIS tunnel diode saturation currents (ID ) versus the gate voltages of the MIS tunnel gate capacitor (VG ). (b) TCAD simulation of the electron concentration at the gate edge, ngap (x=0), versus VG while VD =3 V. Figure 3. Schematic diagrams of the mechanism of how VG affects ID (≈Ih ), as VG is in (a) accumulation, (b) flat-band, (c) depletion, and (d) deep depletion regions. The values of VFB , VG 1, and VG 2are shown in Figure 2(a).

Effects of Design Parameters for Clay Brick Kiln Using Computational Fluid Dynamics and Experimental Design

One of the most critical steps in brick making is firing, performed to harden the bricks. In a typical non-industrial setting, many pieces of extruded clays are stacked into a box-shaped kiln with equally-spaced rectangular vertical holes and another set of equally-spaced horizontal holes at the bottom across two sides. Roman roof tiles are used to cover the vertical sides, while leaving the horizontal holes opened, to complete the kiln assembly. Rice husk is filled in the holes of the kiln and is used as the fuel for firing. However, approximately 10% of the bricks, stacked conventionally, are always not appropriately fired. Therefore, this research aimed at simplifying model and redesigning the clay brick kiln using three-dimensional computational fluid dynamics (CFD). The studied parameters for 23 factorial designs were as follows: kiln height (200 – 225 cm), horizontal holes width (7.5 – 15 cm) and height (45 – 60 cm). The total volume of brick stack, averaged steady-state temperature and time to reach a steady-state temperature were selected as the response parameters. The analysis of variance (ANOVA) of 23 factorial design showed that the width and height of holes affected the time to reach steady-state but the averaged steady-state temperature and the total volume of brick stack were dependent on all 3 parameters. Then, a kiln was constructed according to the model with the maximum number of bricks and only 4% of the bricks were not appropriately fired.

Improved hole distribution in InGaN light-emitting diodes with InGaN-GaN barriers of decreasing indium composition

InGaN light-emitting diodes (LEDs) with InGaN–GaN quantum barriers of gradually decreasing indium concentration along the growth direction are proposed to be used. In the proposed structure, simulation results show that the holes are widely distributed in the active region due to the larger hole injection/transportation efficiency by reducing the effective potential height for holes and the radiative recombination rate is efficiently improved, which leads to the significant enhancement of light-output power and internal quantum efficiency (IQE) over the conventional LED with GaN barriers. Moreover, the optical performance is further improved when the graded InGaN/GaN supperlattice (SL) is introduced between the multiple quantum wells (MQWs) and p-AlGaN electron blocking layer (EBL) in our designed LED structure, permitting more freedom for the optimization.

Effect of Parapet Hole on Tundish Flow Field

According to the actual operating parameters of tundish in a steel mill, the flow pattern and temperature distribution of molten steel in tundish were studied by CFD and heat transfer calculation method. Changing the height of parapet hole, the effect of parapet hole on flow field and temperature field were simulated. The simulation results show that: the parapet hole height has large influence on flow recirculation position, which can impact surface temperature and outflow temperature of molten steel. When parapet hole height increases, the recirculation vortex moves towards the surface of molten steel in outflow zone, surface temperature rises, but outflow temperature decreases near the narrow wall. Comprehensive analysis show that, when the parapet hole height is 480mm, surface temperature is high, molten steel will not solidify at corner; the reduction of molten steel temperature is small at outflow hole.

Electrical Properties of p-type 3C-SiC/Si Heterojunction Diode Under Mechanical Stress

The current mechanism and effects of external transverse stress in the [110] orientation on the electrical properties of a single crystal (100) p-3C-SiC/p-Si heterojunction diode are reported for the first time. It has been observed that the current flow in the heterojunction is due to tunneling through the triangular potential barrier formed due to valence band offset between Si and SiC. The applied stress produces small changes in tunneling current when stress is increased from 0 to 308 MPa. The observed increase in current at 0.24 V is 10% at maximum stress of 308 MPa. The increase of tunneling current when applying stress is explained in terms of stress, which alters the out-of-plane effective mass, and the effective tunneling barrier height of holes in top subbands of p-type Si.

Schottky barrier height reduction for holes by Fermi level depinning using metal/nickel oxide/silicon contacts

We report the experimental demonstration of Fermi level depinning using nickel oxide (NiO) as the insulator material in metal-insulator-semiconductor (M-I-S) contacts. Using this contact, we show less than 0.1 eV barrier height for holes in platinum/NiO/silicon (Pt/NiO/p-Si) contact. Overall, the pinning factor was improved from 0.08 (metal/Si) to 0.26 (metal/NiO/Si). The experimental results show good agreement with that obtained from theoretical calculation. NiO offers high conduction band offset and low valence band offset with Si. By reducing Schottky barrier height, this contact can be used as a carrier selective contact allowing hole transport but blocking electron transport, which is important for high efficiency in photonic applications such as photovoltaics and optical detectors.

Potential variations around grain boundaries in impurity-doped BaSi2 epitaxial films evaluated by Kelvin probe force microscopy

Potential variations around the grain boundaries (GBs) in antimony (Sb)-doped n-type and boron (B)-doped p-type BaSi2 epitaxial films on Si(111) were evaluated by Kelvin probe force microscopy. Sb-doped n-BaSi2 films exhibited positively charged GBs with a downward band bending at the GBs. The average barrier height for holes was approximately 10 meV for an electron concentration n ≈ 1017 cm−3. This downward band bending changed to upward band bending when n was increased to n = 1.8 × 1018 cm−3. In the B-doped p-BaSi2 films, the upward band bending was observed for a hole concentration p ≈ 1018 cm−3. The average barrier height for electrons decreased from approximately 25 to 15 meV when p was increased from p = 2.7 × 1018 to p = 4.0 × 1018 cm−3. These results are explained under the assumption that the position of the Fermi level Ef at GBs depends on the degree of occupancy of defect states at the GBs, while Ef approached the bottom of the conduction band or the top of the valence band in the BaSi2 grain interiors with increasing impurity concentrations. In both cases, such small barrier heights may not deteriorate the carrier transport properties. The electronic structures of impurity-doped BaSi2 are also discussed using first-principles pseudopotential method to discuss the insertion sites of impurity atoms and clarify the reason for the observed n-type conduction in the Sb-doped BaSi2 and p-type conduction in the B-doped BaSi2.

Investigation of trap properties in high-k/metal gate p-type metal-oxide-semiconductor field-effect-transistors with aluminum ion implantation using random telegraph noise analysis

In this study, the impact of aluminum ion implantation (Al I/I) on random telegraph noise (RTN) in high-k/metal gate (HK/MG) p-type metal-oxide-semiconductor field-effect-transistors (pMOSFETs) was investigated. The trap parameters of HK/MG pMOSFETs with Al I/I, such as trap energy level, capture time and emission time, activation energies for capture and emission, and trap location in the gate dielectric, were determined. The configuration coordinate diagram was also established. It was observed that the implanted Al could fill defects and form a thin Al2O3 layer and thus increase the tunneling barrier height for holes. It was also observed that the trap position in the Al I/I samples was lower due to the Al I/I-induced dipole at the HfO2/SiO2 interface.

Light-emitting diodes based on solution-processed nontoxic quantum dots: oxides as carrier-transport layers and introducing molybdenum oxide nanoparticles as a hole-inject layer.

We report fabrication and characterization of solution-processed quantum dot light-emitting diodes (QDLEDs) based on a layer of nontoxic and Earth-abundant zinc-diffused silver indium disulfide (AIZS) nanoparticles as an emitting material. In the QDLEDs fabricated on indium tin oxide (ITO)-coated glass substrates, we use layers of oxides, such as graphene oxide (GO) and zinc oxide (ZnO) nanoparticles as a hole- and electron-transport layer, respectively. In addition, we introduce a layer of MoO3 nanoparticles as a hole-inject one. We report a comparison of the characteristics of different device architectures. We show that an inverted device architecture, ITO/ZnO/AIZS/GO/MoO3/Al, yields a higher electroluminescence (EL) emission, compared to direct ones, for three reasons: (1) the GO/MoO3 layers introduce barriers for electrons to reach the Al electrode, and, similarly, the ZnO layers acts as a barrier for holes to travel to the ITO electrode; (2) the introduction of a layer of MoO3 nanoparticles as a hole-inject layer reduces the barrier height for holes and thereby balances charge injection in the inverted structure; and (3) the wide-bandgap zinc oxide next to the ITO electrode does not absorb the EL emission during its exit from the device. In the QDLEDs with oxides as carrier inject and transport layers, the EL spectrum resembles the photoluminescence emission of the emitting material (AIZS), implying that excitons are formed in the quaternary nanocrystals and decay radiatively.

유사배제를 위한 역쐐기 천공형 래버린스 보의 최적 설계인자 도출

하천에 설치된 대표적인 횡단구조물인 보(Weir)는 수심을 유지시켜주고 수자원(Water resource)확보에 많은 역할을 하는 구조물이다. 그러나 보는 보의 직상류에 유사(sediment)를 퇴적시키는 단점을 가지고 있다. 이는 보의 하류로는 유사가 전달되지 않아 유사연속성(sediment continuity)을 저해하며 이로 인해 보 하류부 생태계에 영향을 미치게 되며 자칫 생태계의 교란을 야기할 수도 있다. 본 연구에서는 일반형 사다리꼴 래버린스 보를 개선하여 유사배제효율(Sediment exclusion efficiency)을 증가시킨 유사배제형 래버린스 보를 제안하였다. 천공의 면적비, 개수, 높이비를 주요변수로 설정하여 변화시켜가면서 수치모의하여 수심유지효과와 유사배제효율에 대한 최적 설계인자를 도출하였다. 그 결과 역쐐기 천공형에 대한 설계인자인 천공면적비는 0.069 이하 일 때, 상류수심의 감소율이 3.0%이하로 수심유지효과가 보존되는 것으로 나타났으며, 천공개수는 월류벽면 당 4개 일때 최대누적유사배제효율을 나타냈으나 큰 영향을 미치지는 못했다. 천공의 높이비(<TEX>$h_{hole}/h_w$</TEX>)는 0.1일 때 최적인 것으로 나타났다. 본 연구에서는 제안된 역쐐기 천공형 유사배제형 래버린스 보는 상대적으로 간단한 시공만으로 유사배제효과를 기대할 수 있으므로 활용성이 높을 것으로 판단되며 추후 설계인자를 이용한 시공을 통해 설계인자 설정의 적절성과 유사배제효율 등의 검증이 가능할 것이다. 또한 생태적인 효과에 대한 검증도 함께 이뤄진다면 그 활용성은 더 증가될 것으로 판단된다. Various transverse artificial structures have been constructed in rivers and streams. A weir, one of representative transverse structures, plays a significant role in maintaining the upstream depth of water and securing water resources. However, it has generic disadvantage of undermining sediment continuity due to sediment deposition at direct upstream of weir. Because of these things, ecosystems of the weir downstream could be effected or disturbed. In this study a trapezoidal Labyrinth weir was modified to increase sediment exclusion efficiency upstream, called as the Sediment Exclusion Labyrinth weir (SEL weir). Various effective factors, the ratio of hole area (a/A), the hole number (n) and the ratio of height of holes and weir (<TEX>$h_{hole}/h_w$</TEX>), were examined in order to find optimal design factor with numerical simulation. As numerical results, when the ratio of hole area was less than 0.069, the reduction rate of upstream height was less than 3.0%, where the upstream water depth was approximately was maintained. When the hole numbers became 4, the maximum accumulated sediment exclusion efficiency was occurred. However, the role of hole number was not played important to accumulated sediment exclusion efficiency. And the maximum accumulated sediment exclusion efficiency was occurred at <TEX>$h_{hole}/h_w=0.1$</TEX>. In this study, it is expected to increase sediment exclusion efficiency and availability with relatively simple and easy modification in terms of construction and management. In the future, the validation of design adequacy and sediment exclusive efficiency will be asked through construction of model and prototype using design factors presented in this study.

INTRASURGICAL DYNAMICS OF MACULAR HOLE SURGERY

To evaluate the intrasurgical retinal architectural and macular hole (MH) geometric alterations that occur during surgical MH repair using intraoperative optical coherence tomography. A retrospective, multisurgeon, single-center, consecutive case series of 21 eyes undergoing surgical repair for MH with concurrent intraoperative optical coherence tomography using a custom microscope-mounted optical coherence tomography system was performed. All patients underwent surgical repair with pars plana vitrectomy, membrane peel, and gas tamponade. A novel three-dimensional segmentation algorithm was used for volumetric analysis of intrasurgical changes of MH geometry after surgical repair. Intraoperative optical coherence tomographic characteristics analyzed included MH volume, minimum diameter, base area, and hole height. Outer retinal architecture changes were analyzed both quantitatively and qualitatively. All 21 eyes were successfully imaged with intraoperative optical coherence tomography. Nineteen of 21 eyes had images of sufficient signal strength to allow for quantitative analysis. Significant changes were noted in MH geometry after internal limiting membrane peeling including increased MH volume, increased base area, and decreased top area (all P < 0.03). Additionally, increased subretinal hyporeflectance was noted by expansion of the height between the inner segment/outer segment and retinal pigment epithelium bands (P = 0.008). Peeling methods and surgeon experience did not correlate with the magnitude of architectural alterations. Macular hole algorithm measurements and alterations were associated with visual outcome and MH closure. Significant alterations occur in MH geometry and outer retinal structure after internal limiting membrane peeling. These changes are subclinical and unable to be appreciated with en face surgical microscope viewing and require intraoperative optical coherence tomography for visualization. Preliminary analysis of these measurements identified an association with visual outcome and successful MH closure. The functional significance of these changes deserves further study.

Performance Enhancement of Blue InGaN Light-Emitting Diodes With InGaN Barriers and Dip-Shaped Last Barrier

The characteristics of blue InGaN light-emitting diodes (LEDs) with InGaN barriers and dip-shaped last barrier are investigated numerically. The simulation results show that the newly designed LEDs have a better performance over the conventional InGaN/GaN and InGaN/InGaN counterparts attributed to the enhancement of carriers confinement induced by the improved potential barrier height for electrons and holes, and the amelioration of electron-hole spatial overlap caused by the reduced polarization effect between the well and barrier. In addition, the efficiency droop and the radiative recombination rate are markedly improved by employing the LEDs with InGaN barriers and dip-shaped last barrier.

Antimonide-Based Heterostructure p-Channel MOSFETs With Ni-Alloy Source/Drain

In this letter, we study the formation and electrical properties of Ni-GaSb alloys by direct reaction of Ni with GaSb. It is found that several properties of Ni-antimonide alloys, including low thermal budget processing (300°C), low Schottky barrier height for holes (~0.1 eV), low sheet resistance of Ni-InGaSb (53 Ω/\square), and low specific contact resistivity (7.6×10) <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-7</sup> Ω cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> ), show good progress toward antimonide-based metal source/drain (S/D) p-channel metal-oxide-semiconductor field-effect transistors. Devices with a self-aligned metal S/D were demonstrated, in which heterostructure design is adopted to further improve the performance, e.g., ON/OFF ratio , subthreshold swing (140 mV/decade), and high effective-field hole mobility of ~510 cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> /Vs at sheet charge density of 2×10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">12</sup> cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-2</sup> .