Hall Plot Analysis Research Articles

Structural properties of lithium doped V3O8 nanorods synthesized by hydrothermal method

The structural properties of lithium-doped trivanadate(Li-doped-V3O8)nanorods have been prepared by using vanadium pentoxide xerogelas reducing agent via hydrothermal method of lithium nitrate in the presence of excess sodium hydroxide. The resulting Li doped V3O8 nanorods materials were characterised using X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive X-ray (EDX), and William- hall plot analysis. Spectroscopic results indicated the successful formation of lithium-doped V3O8 nanorods. The surface morphologies of lithium-doped V3O8 nanorods were obtained to be dependent on the molar ratio of lithium nitrate to vanadium pentoxide. As obtained, nanorods have a particle size in the range of 22.5 nm and 27 nm. The SEM images of vanadium dioxide and Li doped V3O8 reveal the nanorods to have dimensions on the order of 2–4 µm and 1–2 µm in length and 20–30 nm in diameter. The EDX diffraction measures the elemental composition of nanorods. The XRD studies confirm the formation of the compound and crystallinity structure of nanomaterials VO2 and Li doped V3O8. By the Williamson-Hall plot, which displays the structural flaws of nanomaterials, the strain is measured. The unique properties of these Li doped V3O8 make them attractive use in lithium-ion batteries (LIBs) application.

PERFORMANCE ANALYSIS OF OIL AND WATER PRODUCTION IN FIELD X USING DIAGNOSTIC PLOT

Production wells have to be evaluated periodically, one of the problems that can occur is early water problems. Using X-Plot, Chan’s Diagnostic Plot, Decline Curve Analysis and Hall Plot analysis be able to detect RN-01 and RN-02 wells experienced multilayer channeling and RN-03 experienced normal displacement with high WOR.

Composition effects on structure and optical properties in double perovskite derivatives semiconductors Cs2SnI6−xBrx (x = 0–6)

We have proved that Cs2SnI6−xBrx (x = 0–6) can be eutectic in the whole composition, and the eutectic phase has the similar cubic symmetry with both of the end phases (space group of Fm3¯m). The lattice constant decreases from around 11.67 Å (x = 0) to around 10.83 Å (x = 6). Hall-plot analysis shows that the strain varies sharply near the two end materials, while the strain is almost independent of Br content at the middle Br content. The bandgap, on the other hand, increases from 1.26 eV to 2.93 eV with increasing the Br content, which might be expected in fabricating the continuous junction solar cells.

Electrochemical, structural, compositional and optical properties of Cuprous Selenide thin films

This work focussed the electrochemical growth, structural, compositional and optical properties of Cuprous Selenide thin films. An electrochemical route has been used to prepare Cuprous Selenide thin films on different non transparent and transparent conducting substrates. Cyclic voltammetry has been carried out to find out the range of potential of the deposited films. X-ray diffraction shown that the deposited films possess polycrystalline nature. Structural parameters such as crystallite size, strain, dislocation density and stacking fault probability has been determined by the method of Williamson Hall plot analysis. Scanning electron microscopy with Energy dispersive X-ray analysis shown that the deposited films exhibited smooth surface with well defined stoichiometry. Ultraviolet Visible spectroscopic measurements showed that the band gap value around 2.84 eV for the deposited films.

Physical, chemical and optical properties of CdSe and CdSe:Zn thin films obtained through low cost electrochemical route

Abstract In the present report, thin films of Cadmium Selenide (CdSe) and Zn doped Cadmium Selenide (CdSe:Zn) have been deposited on Fluorine doped tin oxide coated (SnO 2 :F) glass substrate by electrodeposition technique. Structural investigation showed that the prepared films have polycrystalline nature with cadmoseleite structure. Williamson Hall plot analysis has been used to estimate the microstructural parameters. Film composition has been analyzed using Energy dispersive X-ray analysis. UV–Visible spectroscopic measurement has been carried out to find out the parameters such as Band gap, refractive index, extinction coefficient value of the deposited films.

X-ray analysis for micro-structure of AlN/GaN multiple quantum well systems

The structural properties of AlN/GaN multiple quantum well (MQW) structures grown on c-plain sapphire substrate are studied by means of high-resolution X-ray diffraction (HRXRD). A new method to consider the influence of the depth variation of the dislocations density and well (barrier) thicknesses on the X-ray diffraction spectra was developed. The influence of the dislocation type on the diffraction peak broadening is based on the mosaic model of a crystal. The represented simulations of the experimental spectra are based on the dynamical theory of X-ray diffraction in agreement with the developed model. The calculations of X-ray diffraction spectra for AlN/GaN MQW considering the depth variation of dislocation density and layers thicknesses explain well the observed broadening and asymmetry of the satellites peaks of the measured spectra, especially for higher-order reflections. In addition, in this paper was demonstrated, that the commonly used Williamson–Hall plot analysis is consistent for MQW structures with the dislocations density > 1 × 108 cm−2. The developed methods allow fast and reliable determination of layers thicknesses, dislocations densities and strain profiles.

Structural, chemical, and electrical properties of ZrO2/Ge system formed via oxidation/nitridation in N2O gas ambient

The effects of oxidation/nitridation for 15 min at different temperatures (300–800 °C) on metal–oxide–semiconductor characteristics of sputtered Zr thin film based on Ge substrate in N2O ambient have been systematically investigated. The crystallinity of the film were evaluated by X-ray diffraction analysis, Raman analysis, and X-ray photoelectron spectrometer. The crystallite size and microstrain of film were estimated by Williamson–Hall plot analysis. Optical microscope was used to examine samples surface condition and high-resolution transmission electron microscopy was carried out to investigate the cross-sectional morphology. GeO2 was detected in samples with oxidation/nitridation temperature above 700 °C. A possible mechanism of Ge atomic diffusion and its rearrangement in ZrO2 has been proposed and explicated.

A new method for evaluating the injection effect of chemical flooding

Hall plot analysis, as a widespread injection evaluation method, however, often fails to achieve the desired result because of the inconspicuous change of the curve shape. Based on the cumulative injection volume, injection rate, and the injection pressure, this paper establishes a new method using the ratio of the pressure to the injection rate (RPI) and the rate of change of the RPI to evaluate the injection efficiency of chemical flooding. The relationship between the RPI and the apparent resistance factor (apparent residual resistance factor) is obtained, similarly to the relationship between the rate of change of the RPI and the resistance factor. In order to estimate a thief zone in a reservoir, the influence of chemical crossflow on the rate of change of the RPI is analyzed. The new method has been applied successfully in the western part of the Gudong 7th reservoir. Compared with the Hall plot analysis, it is more accurate in real-time injection data interpretation and crossflow estimation. Specially, the rate of change of the RPI could be particularly suitably applied for new wells or converted wells lacking early water flooding history.

Physical and electrical properties of thermal oxidized Sm2O3 gate oxide thin film on Si substrate: Influence of oxidation durations

Growth of 150nm Sm2O3 films by sputtered pure samarium metal film on silicon substrates and followed by thermal oxidation process in oxygen ambient at 700°C through various oxidation durations (5min, 10min, 15min and 20min) has been carried out. The crystallinity of Sm2O3 film and existence of interfacial layer have been evaluated by X-ray diffraction, Fourier transform infrared and Raman analysis. Crystallite size and microstrain of Sm2O3 were estimated by Williamson–Hall plot analysis. Calculated crystallite size of Sm2O3 from Scherrer equation has similar trend with the value from Williamson–Hall plot. The presence of interfacial layer is supported by composition line scan by energy dispersive X-ray spectroscopy analysis. The surface roughness and surface topography of Sm2O3 film were examined by atomic force microscopy analysis. The electrical characterization revealed that 15min of oxidation durations with smoothest surface has highest breakdown voltage, lowest leakage current density and highest barrier height value.

Williamson Hall Plot Analysis of the X-ray Diffraction Result of Synthesized Silver Nanocubes for the Determination of Their Elastic Properties

Williamson Hall Plot Analysis of the X-ray Diffraction Result of Synthesized Silver Nanocubes for the Determination of Their Elastic Properties

Anisotropic microstructure of hydrothermally-grown non-polar a-plane ZnO on a-plane GaN film

Nonpolar a-plane ZnO (a-ZnO) films with good crystalline quality have been achieved by a hydrothermal growth method on nonpolar a-plane GaN (a-GaN) films without any nucleation steps. The X-ray diffraction θ–2θ scan of the a-ZnO film grown on a-GaN film showed that the film was uniformly a-plane 112¯0 oriented. The a-ZnO films exhibited anisotropic peak broadenings of the on-axis rocking curves with X-ray in-beam orientations. The full width at half maximum of the on-axis rocking curve of nonpolar a-ZnO film along the c-axis direction was measured to be 2092arcsec, which is almost two times larger than the one along the m-axis direction (1219arcsec). The Williamson–Hall plot analysis of the symmetric 112¯0 and 224¯0 Bragg reflections showed that the mosaic tilt values were 0.647° and 0.407° along the c-axis and m-axis directions, respectively. It clearly indicates that large mosaic tilt along the c-axis in a-ZnO film is mainly responsible for the anisotropic peak broadenings of the on-axis rocking curves with respect to X-ray in-beam orientations.

Structural and optical characterization of CdS/TiO2 nanocomposite

Nanocomposites are advantageous because they can compensate for the disadvantages of the individual component, and induce a synergistic effect, such as an efficient charge separation and improvement of photostability. Present study reveals the advantage of nanocomposite CdS/TiO2 over TiO2 which have been prepared by a simple Co-precipitation method. The particle size of CdS/TiO2 estimated from X-ray diffraction pattern comes out to be ~ 5.8 nm which is in good agreement with that of transmission electron microscopy. High resolution transmission electron microscopy showed a reduction in defect levels in the as prepared CdS/TiO2 nanocomposite in comparison to TiO2. In our method titanium monoxide (TiO) phase has appeared at room temperature against the earlier reports. Williamson–Hall plot analysis revealed the presence of tensile strain in both the CdS/TiO2 and TiO2 samples. New Raman bands for rutile TiO2 have also been observed which have not been previously reported. UV–visible study reveals an enhanced absorption capability of the composite sample (~ 383.85 nm) in comparison to pure TiO2 (~ 331.37 and 324.40 nm).The optical and electrical results have shown the activation of the excited TiO2 in the presence of CdS.