Abstract
This work focussed the electrochemical growth, structural, compositional and optical properties of Cuprous Selenide thin films. An electrochemical route has been used to prepare Cuprous Selenide thin films on different non transparent and transparent conducting substrates. Cyclic voltammetry has been carried out to find out the range of potential of the deposited films. X-ray diffraction shown that the deposited films possess polycrystalline nature. Structural parameters such as crystallite size, strain, dislocation density and stacking fault probability has been determined by the method of Williamson Hall plot analysis. Scanning electron microscopy with Energy dispersive X-ray analysis shown that the deposited films exhibited smooth surface with well defined stoichiometry. Ultraviolet Visible spectroscopic measurements showed that the band gap value around 2.84 eV for the deposited films.
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