Hall Effect In Graphene Research Articles

Inducing and controlling superconductivity in the Hubbard honeycomb model using an electromagnetic drive

The recent successful experimental observation of quantum anomalous Hall effect in graphene under laser irradiation demonstrates the feasibility of controlling single-particle band structure by lasers. Here we study superconductivity in a Hubbard honeycomb model in the presence of an electromagnetic drive. We start with Hubbard honeycomb model in the presence of an electromagnetic field drive, both circularly and linearly polarized light and map it onto a Floquet $t\ensuremath{-}J$ model. We explore conditions on the drive under which one can induce superconductivity (SC) in the system. We study the Floquet $t\ensuremath{-}J$ model within the mean-field theory in the singlet pairing channel and explore superconductivity for small doping in the system using the Bogoliubov--de Gennes approach. We uncover several superconducting phases, which break lattice or time-reversal symmetries in addition to the standard U(1) symmetry. We show that the unconventional chiral SC order parameter ($d\ifmmode\pm\else\textpm\fi{}id$) can be driven to a nematic SC order parameter ($s+d$) in the presence of a circularly polarized light. The $d+id$ SC order parameter breaks time-reversal symmetry and is topologically nontrivial and supports chiral edge modes. We further show that the threefold nematic degeneracy can be lifted using linearly polarized light. Our work, therefore, provides a generic framework for inducing and controlling SC in the Hubbard honeycomb model, with possible application to graphene and other two-dimensional materials.

Detection of hidden localized states by the quantum Hall effect in graphene

We fabricated a monolayer graphene transistor device in the shape of the Hall-bar structure, which produced an exactly symmetric signal following the sample geometry. During electrical characterization, the device showed the standard integer quantum Hall effect of monolayer graphene except for a broader range of several quantum Hall plateaus corresponding to small filling factors in the electron region. We investigated this anomaly on the basis of localized states owing to the presence of possible electron traps, whose energy levels were estimated to be near the Dirac point. In particular, the inequality between the filling of electrons and holes was ascribed to the requirement of excess electrons to fill the trap levels. The relations between the quantum Hall plateau, Landau level, and filling factor were carefully analyzed to reveal the details of the localized states in this graphene device.

Quantum Anomalous Hall Effects in Graphene from Proximity-Induced Uniform and Staggered Spin-Orbit and Exchange Coupling.

We investigate an effective model of proximity modified graphene (or symmetrylike materials) with broken time-reversal symmetry. We predict the appearance of quantum anomalous Hall phases by computing bulk band gap and Chern numbers for benchmark combinations of system parameters. Allowing for staggered exchange field enables quantum anomalous Hall effect in flat graphene with Chern number C=1. We explicitly show edge states in zigzag and armchair nanoribbons and explore their localization behavior. Remarkably, the combination of staggered intrinsic spin-orbit and uniform exchange coupling gives topologically protected (unlike in time-reversal systems) pseudohelical states, whose spin is opposite in opposite zigzag edges. Rotating the magnetization from out of plane to in plane makes the system trivial, allowing us to control topological phase transitions. We also propose, using density functional theory, a material platform-graphene on Ising antiferromagnet MnPSe_{3}-to realize staggered exchange (pseudospin Zeeman) coupling.

Photoprotected spin Hall effect on graphene with substrate induced Rashba spin–orbit coupling

We propose an experimental realization of the spin Hall effect in graphene by illuminating a graphene sheet on top of a substrate with circularly polarized monochromatic light. The substrate induces a controllable Rashba type spin–orbit coupling which breaks the spin-degeneracy of the Dirac cones but it is gapless. The circularly polarized light induces a gap in the spectrum and turns graphene into a Floquet topological insulator with spin dependent edge states. By analyzing the high and intermediate frequency regimes, we find that in both parameter limits, the spin-Chern number can be tuned by the effective coupling strength of the charge particles to the radiation field and determine the condition for the photoinduced topological phase transition.

Substantially enhanced robustness of quantum Hall effect in graphene on LaAlO3/SrTiO3 heterostructure

Hybrid structures comprised of monolayer graphene and LaAlO3/SrTiO3 heterostructure are fabricated. By exploiting LaAlO3 as a natural dielectric layer, an ultra-large capacitance of up to 1.59 μF cm−2 is obtained, enabling significantly reduced operating gate voltage for this graphene-based field-effect device. Furthermore, well-defined quantum Hall effects (QHEs) are realized at relatively modest conditions, e.g. at 1.5 K/1.5 T, and 150 K/7 T. The substantially enhanced robustness of QHE is attributed to the suppression of multiple scattering processes in graphene with the help of LaAlO3/SrTiO3. These results make graphene on LaAlO3/SrTiO3 a viable choice for developing quantum metrology of resistance.

Light-induced anomalous Hall effect in graphene.

Many non-equilibrium phenomena have been discovered or predicted in optically-driven quantum solids1. Examples include light-induced superconductivity2,3 and Floquet-engineered topological phases4–8. These are short lived effects that should lead to measurable changes in electrical transport, which can be characterized using an ultrafast device architecture based on photoconductive switches9. Here, we report the observation of a light-induced anomalous Hall effect in monolayer graphene driven by a femtosecond pulse of circularly polarized light. The dependence of the effect on a gate potential used to tune the Fermi level reveals multiple features that reflect a Floquet-engineered topological band structure4,5, similar to the band structure originally proposed by Haldane10. This includes an approximately 60 meV wide conductance plateau centered at the Dirac point, where a gap of equal magnitude is predicted to open. We find that when the Fermi level lies within this plateau, the estimated anomalous Hall conductance saturates around 1.8±0.4 e2/h.

Nanoparticle-Induced Anomalous Hall Effect in Graphene.

Schemes for introducing magnetic properties into graphene are of fundamental interest and could enable the development of electrically controlled magnetic devices, thereby extending graphene's applications from conventional electronics to spintronics. Proximity-induced ferromagnetism (PIFM) has been reported for graphene coupled to adjacent ferromagnetic insulators (FMIs). PIFM from an FMI preserves graphene's high carrier mobility and does not introduce a parallel current path. However, few FMIs other than yttrium-iron-garnet are suitable for practical applications due to difficulties in their growth and deposition and to their typically low Curie temperatures. Furthermore, it is difficult to obtain a high-quality FMI/graphene interface by graphene transfer methods, which are essential for obtaining the required interfacial exchange coupling. Here, we report the observation of the anomalous Hall effect (AHE) in graphene proximity coupled to an array of magnetic nanoparticles. This observation of AHE in graphene in proximity to a discontinuous magnetic structure opens the door to realizing magnetic properties in graphene from a greatly expanded range of materials and offers new possibilities for realizing patterned spintronic devices and circuitry.

Cavity quantum electrodynamical Chern insulator: Towards light-induced quantized anomalous Hall effect in graphene

We show that an energy gap is induced in graphene by light-matter coupling to a circularly polarized photon mode in a cavity. Using many-body perturbation theory we compute the electronic spectra which exhibit photon-dressed sidebands akin to Floquet sidebands for laser-driven materials. In contrast with Floquet topological insulators, in which a strictly quantized Hall response is induced by light only for off-resonant driving in the high-frequency limit, the photon-dressed Dirac fermions in the cavity show a quantized Hall response characterized by an integer Chern number. Specifically for graphene we predict that a Hall conductance of $2 e^2/h$ can be induced in the low-temperature limit.

Microscopic theory for the light-induced anomalous Hall effect in graphene

We employ a quantum Liouville equation with relaxation to model the recently observed anomalous Hall effect in graphene irradiated by an ultrafast pulse of circularly polarized light. In the weak-field regime, we demonstrate that the Hall effect originates from an asymmetric population of photocarriers in the Dirac bands. By contrast, in the strong-field regime, the system is driven into a non-equilibrium steady state that is well-described by topologically non-trivial Floquet-Bloch bands. Here, the anomalous Hall current originates from the combination of a population imbalance in these dressed bands together with a smaller anomalous velocity contribution arising from their Berry curvature. This robust and general finding enables the simulation of electrical transport from light-induced Floquet-Bloch bands in an experimentally relevant parameter regime and creates a pathway to designing ultrafast quantum devices with Floquet-engineered transport properties.

Competing Fractional Quantum Hall and Electron Solid Phases in Graphene.

We report experimental observation of the reentrant integer quantum Hall effect in graphene, appearing in the N=2 Landau level. Similar to high-mobility GaAs/AlGaAs heterostructures, the effect is due to a competition between incompressible fractional quantum Hall states, and electron solid phases. The tunability of graphene allows us to measure the B-T phase diagram of the electron solid phase. The hierarchy of reentrant states suggests spin and valley degrees of freedom play a role in determining the ground state energy. We find that the melting temperature scales with magnetic field, and construct a phase diagram of the electron liquid-solid transition.

Room-Temperature Spin Hall Effect in Graphene/MoS2 van der Waals Heterostructures.

Graphene is an excellent material for long-distance spin transport but allows little spin manipulation. Transition-metal dichalcogenides imprint their strong spin-orbit coupling into graphene via the proximity effect, and it has been predicted that efficient spin-to-charge conversion due to spin Hall and Rashba-Edelstein effects could be achieved. Here, by combining Hall probes with ferromagnetic electrodes, we unambiguously demonstrate experimentally the spin Hall effect in graphene induced by MoS2 proximity and for varying temperatures up to room temperature. The fact that spin transport and the spin Hall effect occur in different parts of the same material gives rise to a hitherto unreported efficiency for the spin-to-charge voltage output. Additionally, for a single graphene/MoS2 heterostructure-based device, we evidence a superimposed spin-to-charge current conversion that can be indistinguishably associated with either the proximity-induced Rashba-Edelstein effect in graphene or the spin Hall effect in MoS2. By a comparison of our results to theoretical calculations, the latter scenario is found to be the most plausible one. Our findings pave the way toward the combination of spin information transport and spin-to-charge conversion in two-dimensional materials, opening exciting opportunities in a variety of future spintronic applications.

Realizing both giant magnetic anisotropy and quantum anomalous Hall effect in graphene with adsorbed Te-Co dimer

To realize quantum anomalous Hall state at higher temperature, it needs to search for the magnetic topological insulators with giant magnetic anisotropy. We have studied the structural, magnetic and topological properties of graphene with adsorbed Te-A (A Co, Rh, Ir) dimers by first-principles calculations and Wannier technique. Our results reveal that the system of Te-Co@G is an excellent magnetic topological insulator with both perpendicular magnetic anisotropy of 61.7 meV and large topological band-gap of 35.8 meV. Both the magnetic anisotropy and the band-gap can be effectively tuned by the applied electric field. The dimers are stably adsorbed onto the graphene and the systems are robust against thermal fluctuation. Topological analysis reveals that the adsorption system is the Chern insulator with .

The Construction of a Graphene Hall Effect Magnetometer

This paper deals with design and fabrication of graphene micro-Hall devices along with driving and processing electronics to construct a highly sensitive graphene magnetometer system. Graphene micro-Hall elements were fabricated by implementing microfabrication techniques. Custom driving and processing circuitry was designed and built on a printed circuit board and integrated with fabricated graphene Hall devices; reducing the offset equivalent magnetic field and greatly improving the sensitivity. The performance parameters were quantitatively analyzed for characterizing the sensitivity in terms of linearity, current-related sensitivity, and magnetic field resolution. The potential of graphene magnetometers for detection capability of low fields has been demonstrated with a current related sensitivity of 2540 V/AT and magnetic field resolution of 162 nT/ $\surd $ Hz.

Pseudogap, Fermi arc, and Peierls-insulating phase induced by 3D–2D crossover in monolayer VSe2

One of important challenges in condensed-matter physics is to realize new quantum states of matter by manipulating the dimensionality of materials, as represented by the discovery of high-temperature superconductivity in atomic-layer pnictides and room-temperature quantum Hall effect in graphene. Transition-metal dichalcogenides (TMDs) provide a fertile platform for exploring novel quantum phenomena accompanied by the dimensionality change, since they exhibit a variety of electronic/magnetic states owing to quantum confinement. Here we report an anomalous metal-insulator transition induced by three-dimensional (3D)–two-dimensional (2D) crossover in monolayer 1T-VSe2 grown on bilayer graphene. We observed a complete insulating state with a finite energy gap on the entire Fermi surface in monolayer 1T-VSe2 at low temperatures, in sharp contrast to metallic nature of bulk. More surprisingly, monolayer 1T-VSe2 exhibits a pseudogap with Fermi arc at temperatures above the charge-density-wave temperature, showing a close resemblance to high-temperature cuprates. This similarity suggests a common underlying physics between two apparently different systems, pointing to the importance of charge/spin fluctuations to create the novel electronic states, such as pseudogap and Fermi arc, in these materials.

Investigating transverse Hall voltages using two-terminal setups

In this paper we present a method to numerically study transverse Hall conductances using a two-terminal setup. Using nonlinear transport concepts we find that the Hall voltage dependence on the model parameters can be investigated from the difference between the injectivities from each terminal. The method is suitable to work with non-equilibrium Green's functions as well as for scattering matrix approaches. We illustrate the proposed idea by studying the quantum spin Hall effect in graphene with disordered spin-orbit scattering centers induced by adatoms. We use two distinct models, a finite difference implementation of the Dirac Hamiltonian and a tight-binding Hamiltonian combined with the scattering matrix approach and the non-equilibrium Green's functions approach, respectively.

Tailoring sample-wide pseudo-magnetic fields on a graphene-black phosphorus heterostructure.

Spatially tailored pseudo-magnetic fields (PMFs) can give rise to pseudo-Landau levels and the valley Hall effect in graphene. At an experimental level, it is highly challenging to create the specific strain texture that can generate PMFs over large areas. Here, we report that superposing graphene on multilayer black phosphorus creates shear-strained superlattices that generate a PMF over an entire graphene-black phosphorus heterostructure with edge size of tens of micrometres. The PMF is intertwined with the spatial period of the moiré pattern, and its spatial distribution and intensity can be modified by changing the relative orientation of the two materials. We show that the emerging pseudo-Landau levels influence the transport properties of graphene-black phosphorus field-effect transistor devices with Hall bar geometry. The application of an external magnetic field allows us to enhance or reduce the effective field depending on the valley polarization with the prospect of developing a valley filter.

Abelian Chern-Simons theory for the fractional quantum Hall effect in graphene

We develop a theory for the pseudorelativistic fractional quantum Hall effect in graphene, which is based on a multicomponent abelian Chern-Simons theory in the fermionic functional integral approach. Calculations are performed in the Keldysh formalism, directly giving access to real-time correlation functions at finite temperature. We obtain an exact effective action for the Chern-Simons gauge fields, which is expanded to second order in the gauge field fluctations around the mean-field solution. The one-loop fermionic polarization tensor as well as the electromagnetic response tensor in random phase approximation are derived, from which we obtain the Hall conductivities for various FQH states, lying symmetrically around charge neutrality.

Highly Sensitive and Selective Potassium Ion Detection Based on Graphene Hall Effect Biosensors.

Potassium (K+) ion is an important biological substance in the human body and plays a critical role in the maintenance of transmembrane potential and hormone secretion. Several detection techniques, including fluorescent, electrochemical, and electrical methods, have been extensively investigated to selectively recognize K+ ions. In this work, a highly sensitive and selective biosensor based on single-layer graphene has been developed for K+ ion detection under Van der Pauw measurement configuration. With pre-immobilization of guanine-rich DNA on the graphene surface, the graphene devices exhibit a very low limit of detection (≈1 nM) with a dynamic range of 1 nM–10 μM and excellent K+ ion specificity against other alkali cations, such as Na+ ions. The origin of K+ ion selectivity can be attributed to the fact that the formation of guanine-quadruplexes from guanine-rich DNA has a strong affinity for capturing K+ ions. The graphene-based biosensors with improved sensing performance for K+ ion recognition can be applied to health monitoring and early disease diagnosis.

Quantum Hall effect in graphene with interface-induced spin-orbit coupling

We consider an effective model for graphene with interface-induced spin-orbit coupling and calculate the quantum Hall effect in the low-energy limit. We perform a systematic analysis of the contribution of the different terms of the effective Hamiltonian to the quantum Hall effect (QHE). By analysing the spin-splitting of the quantum Hall states as a function of magnetic field and gate-voltage, we obtain different scaling laws that can be used to characterise the spin-orbit coupling in experiments. Furthermore, we employ a real-space quantum transport approach to calculate the quantum Hall conductivity and investigate the robustness of the QHE to disorder introduced by hydrogen impurities. For that purpose, we combine first-principles calculations and a genetic algorithm strategy to obtain a graphene-only Hamiltonian that models the impurity.

石墨烯霍尔效应的研究进展

石墨烯霍尔效应的研究进展