Half-wave Rectifier Research Articles

Design and implementation of a driver circuit for three-phase induction motor based on STM32F103C8T6

A three-phase induction motor is an electrical machine that can be used for many industrial applications. A three-phase driver circuit, also known as a three-wire series circuit or three-wire delta circuit is an electrical power system. These motors typically rely on power supplied using electric cables, which carry alternating currents. The three-phase motor inverter driver circuit is a simple circuit consisting of three half-wave rectifiers, which are connected in a bridge. When the input voltage level of the DC power supply to the inverter is high enough, this arrangement can provide a large current through the induction motor. This paper will show how to build a three-phase inverter driver circuit from scratch for a threephase induction motor by using (transistors and diodes) for photovoltaic application. The paper will guide people through each step with diagrams and schematics that make it easy for anyone to understand every part of this project and ensure people's safety by learning how these components work before putting them into their own design. The focus of this project will be on the use of STM32F103C8T6 as microcontrollers to generate the pulse width modulation (PWM) signals.

A linearly/electronically controllable high gain VDGA and its applications

Since the transconductance gains of an active building block namely voltage differencing gain amplifier (VDGA) is directly proportional to nonlinear (square root) function of external DC bias currents, affecting the narrow range tunability and low transconductance gains. This article aims to introduce a high gain VDGA by using CMOS current squaring circuits biasing in each transconductance cell. It offers high transconductance gains, wide range of tunability, linearity of controllability, larger input voltage range and nearly infinite input impedance. The proposed circuit was designed using a 0.18 µm CMOS transistors technology. The test was performed using PSpice program, it is consistent with the theoretical expectation. The total power consumption is 2.9 mW at ±1.5 V power supply. Even its power consumption is more than about 3 times of their previously proposed VDGAs, the figure of merit (FOM) of the proposed VDGA is much better than that of the previously proposed VDGAs (about 10 times). Additionally, the applications of the proposed VDGA as a capacitance multiplier, current multiplier/divider, summing amplifier, independently/electronically tunable multifunction filter, precision half-wave and full-wave rectifiers are included to insist the workability of the proposed VDGA.

Rectifier Design for Highly Loaded Inductive Wireless Power Transfer Systems for Biomedical Applications

Power transfer efficiency (PTE) and harmonics are crucial performance parameters of the resonant rectifier design for low/medium coupling inductive wireless power transfer (WPT) systems used in wireless biomedical implants. The performance of a resonant rectifier degrades under higher loading and lower coupling conditions as the voltage available to the rectifier at the output of the receiver coil becomes low. As the diode turn-on impedance increases, diodes turn on incompletely, leading to non-linearities that reduce rectifier efficiency and output voltage. This work proposes a new rectifier design to increase efficiency and reduce harmonics by decreasing the diode turn-on impedance compared to traditional rectifier designs, such as resonant Half Wave Rectifier (HWR). The proposed rectifier design offers individual paths for RF and rectification signals, which reduces the non-linear loading on the receiver coil and improves diode turn-on performance. Measurement and SPICE simulation results show efficiency enhancement of 50% and reduction of harmonics by 6 dB for the proposed rectifier compared to HWR.

Polarity-Reversible Te/WSe2 van der Waals Heterodiode for a Logic Rectifier and Polarized Short-Wave Infrared Photodetector.

As a p-type elemental material with high carrier mobility, superior ambient stability, and anisotropic crystal structure, emerging two-dimensional (2D) tellurium (Te) has been considered a successor to black phosphorus for developing infrared-related optoelectronics. Nevertheless, the lack of a scalable thickness engineering strategy remains an obstacle to unleashing its full potential. Te-based electronics with logic functions are also less explored. Herein, we propose a novel wet-chemical thinning method for 2D Te, with the merits of scalability and site-specific thickness patterning capability. A polarity-switchable van der Waals (vdW) heterodiode with a high rectification ratio of 2.4 × 103 is realized on the basis of Te/WSe2. The electronic application of this unique characteristic is demonstrated by fabricating a logic half-wave rectifier, in which the rectifying states are switchable via electrostatic gating control. Besides, the narrow band gap of Te endows the device with a broad spectral response from visible to short-wave infrared. The room-temperature responsivity reaches 5.2 A W-1 at the telecom wavelength of 1.55 μm, with an external quantum efficiency of 420% and detectivity of 6.8 × 109 Jones. In particular, owing to the intrinsic in-plane anisotropy of Te, the device exhibits a favorable photocurrent anisotropic ratio of ∼3. Our study demonstrates the enormous potential of Te for novel electronics, promoting the development of elemental 2D materials.

Markov Chain: A Novel Tool for Electronic Ripple Analysis

Objective: To delineate a novel surrogate approach to analyse the ripple component by constructing a complex network using the Markov model. Methods: Adjacency matrices (A) are constructed from the digital storage oscilloscope output signal of the Full-Wave (FWR) and Half-Wave Rectifiers (HWR) without and with a filter. The centrality measures - indegree, outdegree, in closeness, out closeness, Weighted Network Clustering Coefficient (WNCC) – are also computed for the Markov chain. Findings: With the increase of filter capacitance, more elements in the adjacency matrix become zero. Finally, only one matrix element corresponding to A10;10 remains nonzero for FWR and A20;20 for HWR, indicating the total rectification of the signal at 10 volts. The Markov chain analysis shows that as the ripple component decreases, the number of unconnected nodes increases and the self-loop of the last node increases. For the rectifier output without filtering, it is found that all the nodes are interconnected through edges. The greater the filtering efficiency, the greater the indegree and outdegree, and the lesser the incloseness, outcloseness and WNCC measures. Keywords: Complex network; Markov chain; Rectifier; Time series; Ripple

Wireless Powering and Telemetry of Deep-Body Ingestible Bioelectronic Capsule

In this article, a complete and efficient wireless power transfer (WPT) system, consisting of a full-duplex antenna, a half-wave rectifier, and a WPT transmitter (Tx), is designed and validated for deep-body ingestible biomedical capsules. A two-port full-duplex antenna is adopted to perform seamless telemetry and to act as a receiver for WPT Tx without using a multiplexer circuit. The full-duplex implantable antenna operates at 915 MHz (Port 1) and 1300 MHz (Port 2) and occupies compact dimensions of 8 <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\times $ </tex-math></inline-formula> 8 <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\times $ </tex-math></inline-formula> 0.13 mm 3. It maintains high isolation of >30 dB and peak realized gains of −19.3 dBi at 915 MHz and −17.7 dBi at 1300 MHz. The miniaturization of this antenna is achieved using semicircular slots on the patch and circular slots on the ground plane while mutual coupling between the ports is reduced by a series of metallic vias. Moreover, a low-profile and efficient rectifier is designed at 1300 MHz and integrated with port 2 of the antenna. The suggested rectifier achieves a radio frequency (RF) to direct current (dc) conversion efficiency of 80.4% at an input power of 1 dBm. Furthermore, a patterned patch antenna is designed that acts as a WPT Tx for the biomedical capsule. After examining the individual performance of the antenna, rectifier, and WPT Tx, the overall WPT system is then validated by placing the capsule (rectifier integrated antenna) inside minced pork meat and powered by the WPT Tx. This WPT system is suitable for modern capsule devices due to its features, such as compact size, high gains, high RF-dc conversion efficiency, simultaneous wireless powering and telemetry, and high-power transfer efficiency (PTE).

General analysis and optimization of a two-stage power management circuit for electrostatic/triboelectric nanogenerators

Triboelectric nanogenerators (TENGs) generate high AC voltages that are often rectified using stable charge pumps. This paper provides for the first time a comprehensive general theory that determines the optimal electrical bias conditions for this class of rectifiers. In this work, the proposed generic formulas have been applied to full-wave and half-wave diode bridges. Key figures have been demonstrated like for instance the optimal bias voltage or the maximum converted energy. It is confirmed that half-wave rectifiers always have a higher saturated voltage, as well as higher maximum energy per cycle, but at the cost of longer start-up time. On the contrary, full-wave rectifiers perform better only when the output voltage is much lower than the internal triboelectric voltage of the TENG. These rectifiers followed by a buck DC-DC converter have also been studied in details, often required to provide a low output voltage. We showed that the optimal buck’ switch activation is between .5 and .7 of the charge-pump saturation voltage, depending on the hysteresis of the switch, and that the charging time of the output capacitor is at least twice as fast with a half-wave rectifier than with a full-wave rectifier. The theoretical results were confirmed by simulations and experiments using a plasma switch.

Averaged large-signal model of a DC-DC isolated forward resonant reset converter for a solar cell battery charger using internet of things: implementation

In this study, an analysis and modeling circuit for controlling battery charge solar cells based on data management through internet of things (IoT) is presented. For this proposed, a DC-DC forward resonant reset converter is employed and can be charged at a constant current and constant voltage. Data management of various parameters using IoT technology is provided, via which notifications can be sent to an external application. The proposed converter can give an output voltage of 14.4 VDC for a voltage range including between 9 and 18 VDC, using an isolated transformer and a halfwave rectifier circuit. The main switch of the forward resonant reset converter can operate under a zero-turn-on condition. This approach has the benefit of utilizing a leaking inductance. Llkp and resonant capacitor Cr to reset the remaining flux saturation on the high-frequency transformer. A simulation model prototype was created and tested at a set switching frequency of 50 kHz, 14.4 VDC constant output voltage, and output power of approximately 29 W. An efficiency of 96% at maximum full load can be reached. The proposed analysis techniques and mathematical model were verified via simulation and experimental results, and the obtained results are in agreement with the theoretical analysis.

Low voltage EX-CCCII based on quasi-floating gate technique and its application as precision rectifier

This paper introduces a novel low-voltage low-power Extra-X Current Controlled Current Conveyor (EX-CCCII) based on quasi floating gate (QFG) MOSFET. The QFG technique is employed in low voltage applications and overcomes the limitation of the floating gate technique. The presented circuit is implemented at a supply voltage of ±0.5 V with a power consumption of 90 µW at 20 µA bias current. As an application, the proposed QFG based EX-CCCII is employed to realize a novel current mode precision rectifier circuit. This circuit can simultaneously provide positive and negative type half wave and full wave rectifiers with the same circuit configuration. Furthermore, the rectifier circuit has low input and high output impedance terminals making it suitable for cascading with other current mode circuits. All the results provided to verify the circuit performance are simulated using CADENCE VIRTUOSO SPECTRE simulator with 0.18 µm UMC CMOS technology process parameters. The simulation results confirm the theoretical concept.

Bifunctional Application of Viologen-MoS2-CNT/Polythiophene Device as Electrochromic Diode and Half-Wave Rectifier.

A dual purpose solid state electrochromic diode has been fabricated using polythiophene (P3HT) and ethyl Viologen (EV), predoped with multiwalled carbon nanotubes (MWCNTs) and MoS2. The device has been designed by considering two important aspects, first, the complementary redox activity of P3HT and EV and second, the electron holding properties of MoS2 and MWCNTs. The latter is found to enhance the electrochromic performance of the solid state device. On the other hand, the complementary redox nature gives the asymmetric diodic I-V characteristic to the device which has been exploited to use the electrochromic device for rectification application. The MoS2 nanoflower and MWCNTs are synthesized by one-step hydrothermal and pyrolysis techniques and well characterized by scanning electron microscopy (SEM), X-ray analysis (XRD), and Raman spectroscopy. Electrochromic properties of the device have been studied in detail to reveal an improvement in device performance in terms of faster speed and high coloration efficiency and color contrast. In situ bias-dependent Raman spectroscopy has been performed to understand the operation mechanism of the electrochromic diode which reveals (bi-)polaron formation as a result of dynamic doping eventually leading to color change. A half-wave rectifier has been realized from the electrochromic diode which rectifies an AC voltage of frequency 1 Hz or less making it suitable for low frequency operation. The study opens a new possibility to design and fabricate multipurpose frequency selective electrochromic rectifiers.

АНАЛИЗ ПЕРЕХОДНЫХ ПРОЦЕССОВ В ВЕНТИЛЬНОМ МАГНИТОЭЛЕКТРИЧЕСКОМ ГЕНЕРАТОРЕ С ШЕСТИФАЗНОЙ НУЛЕВОЙ СХЕМОЙ ВЫПРЯМЛЕНИЯ

The article poses and solves the problem of developing a universal simulation model of a six-phase magnetoelectric generator (MEG) with a half-wave rectifier based on the mathematical modeling technique, taking into account the rational form of representation of the valve generator (VG) equations and the optimal, in terms of machine time, organization computational procedures. The mathematical description of the gate MEG is based on the method of representing the model equations in a homogeneous coordinate basis of variables, which makes it possible to describe the electromagnetic processes of the SH by a system of differential equations (DE) of the minimum order (in terms of the number of independent circuit circuits - chords of a tree of a directed graph) order. This method is preferred due to the fact that the power structure of the investigated VG does not contain capacitive elements.

A Ge-based dual channel rectified single ended Schottky barrier field effect transistor for 2.45 GHz microwave wireless energy transmission

Rectifier component is a core part of a microwave wireless energy transmission system, and the development of new rectifier components is an important research direction in this field. Schottky diodes and field-effect transistors are currently the mainstream rectifier devices, but they have a limited rectification range and cannot achieve a wide-range rectification of both weak energy and medium energy density at the same time. In view of this, in this work proposed and designed is a Ge based p-type single-ended Schottky barrier field effect transistor (Schottky contact at the source and standard p&lt;sup&gt;+&lt;/sup&gt; doping at the drain) for 2.45 GHz microwave wireless energy transmission. Based on this, the Schottky structure of the device is fully utilised and a new diode connection is used in order to realize a dual channel wide range rectification of the trench and source lined Schottky structure opened at different bias voltages. Simulations are carried out by using the Silvaco TCAD software. For a half-wave rectifier circuit with a load of 0.3 pF and 70 kΩ, a wide range from –20 to 24 dBm rectification is achieved, which is 8 dBm wider than the range of Ge field-effect transistors under the same conditions, and the overall rectification efficiency is higher in the range, with a peak rectification efficiency of 57.27% at 16 dBm. The rectification efficiency at –10 dBm weak energy density reaches 6.17%, which is more than 7 times that of Ge FETs under the same conditions.

Compact and High-Efficiency Rectenna for Wireless Power-Harvesting Applications

A compact, single-layer microstrip rectenna for dedicated far-field RF wireless power-harvesting applications is presented. The proposed rectenna circuit configurations including multiband triple L-Arms patch antenna with diamond slot ground are designed to resonate at 10, 13, 17, and 26 GHz with 10 dB impedance bandwidths of 0.67, 0.8, 2.45, and 4.3 GHz, respectively. Two rectifier designs have been fabricated and compared, a half wave rectifier with a shunted Schottky diode and a voltage doubler rectifier. The measured and simulated maximum conversion efficiencies of the rectifier using the shunted diode half-wave rectifier are 41%, and 34%, respectively, for 300 Ω load resistance, whereas they amount to 50% and 43%, respectively, for voltage doubler rectifier with 650 Ω load resistance. Compared to the shunted rectifier circuit, it is significant to note that the voltage doubler rectifier circuit has higher efficiency. Both rectifier’s circuits presented are tuned for a center frequency of 10 GHz and implemented using 0.81 mm thick Rogers (RO4003c) substrate. The overall size of the antenna is 16.5 × 16.5 mm2, and the shunted rectifier is only 13.3 × 8.2 mm2 and 19.7 × 7.4 mm2 for the voltage doubler rectifier. The antenna is designed and simulated using the CST Microwave Studio Suite (Computer Simulation Technology), while the complete rectenna is simulated using Agilent’s ADS tool with good agreement for both simulation and measurements.

Heat transport in a two-level system driven by a time-dependent temperature

The field of thermotronics aims to develop thermal circuits that operate with temperature biases and heat currents just as how electronic circuits are based on voltages and electric currents. Here, we investigate a thermal half-wave rectifier based on a quantum two-level system (a qubit) that is driven by a periodically modulated temperature difference across it. To this end, we present a non-equilibrium Green's function technique, which we extend to the time domain to account for the time-dependent temperature in one of two thermal reservoirs connected to the qubit. We find that the qubit acts a thermal diode in parallel with a thermal capacitor, whose capacitance is controlled by the coupling to the reservoirs. These findings are important for the efforts to design non-linear thermal components such as heat rectifiers and multipliers that operate with more than one diode.

On the Design of an Efficient Inductive Wireless Power Transfer for Passive Neurostimulation Systems.

In this paper, a minimally invasive wireless powered electronic lens (e-lens) with passive electrodes is presented for an ocular electrical stimulation. Previous research has focused on the differentiation property of the induction phenomenon and half wave rectifiers. However, these approaches are generally application specific, non efficient, suitable for low current, and deliver monophasic current stimulation. Existing rectifier-based techniques can lead to safety concerns as the offset voltage could change unpredictably. A new wireless power transfer circuit is presented for the design of an efficient system to wirelessly deliver charge-balanced biphasic waveforms through passive electrodes for transcorneal electrical stimulation. The absence of active components allows the development of a flexible e-lens system for therapeutic electrical stimulation of the eye.

Analysis of loss on single-phase dry transformers with non-linear load

The paper studies power losses in transformers due to non-linear loads. The research aims to analyze the power loss in a single-phase dry transformer under a non-linear load. The research uses an SW43W Power supply type, FlukeView Power Quality Analyzer as a DC or AC power supply on the primary side of the transformer. The non-linear load is connected to the secondary side. The loading test of the dry transformer was carried out at non-linear loads. The load variations used 0 %; 12.5 %; 25 %; 37.5 %; 50 %; 62.5 %; 75 %; 87.5 % and 100 %, as well as variations in the THD value by adjusting the ignition angle (α). The non-linear loads used are Half-Wave Rectifier and Controlled Half-Wave Rectifier with resistive loads with variations in THD values. The results showed that the transformer losses comprised Pno load and Pload. The operation of the transformer with constant input voltage and frequency with THDv&lt;5 % resulted in a constant Pno load value at all load values. The greater the percentage of the load, the higher the load. The increase in THD because of non-linear load will increase the load on the transformer. The value of the derating factor is obtained by connecting the increase in losses (∆PLosses), which is influenced by THD and the increase in temperature T(°C) in dry transformers. When the transformer is loaded with a non-linear load, the derating factor&lt;1. THD and derating factor form a linear relationship, when THD increases, the derating factor value decreases. Linear load on the transformer causes a decrease in its capacity, but if it gets a non-linear load with THD=39.1 %, it can withstand a load of 84.294 %, besides the increase in total harmonic distortion will increase losses and reduce transformer capacity

A high rectification efficiency Si0.14Ge0.72Sn0.14-Ge0.82Sn0.18-Ge quantum structure n-MOSFET for 2.45 GHz weak energy microwave wireless energy transmission

The design strategy and efficiency optimization of a Ge-based n-type metal–oxide–semiconductor field-effect transistor (n-MOSFET) with a Si0.14Ge0.72Sn0.14–Ge0.82Sn0.18–Ge quantum structure used for 2.45 GHz weak energy microwave wireless energy transmission is reported. The quantum structure combined with δ-doping technology is used to reduce the scattering of the device and improve its electron mobility; at the same time, the generation of surface channels is suppressed by the Si0.14Ge0.72Sn0.14 cap layer. By adjusting the threshold voltage of the device to 91 mV, setting the device aspect ratio to 1 μm/0.4 μm and adopting a novel diode connection method, the rectification efficiency of the device is improved. With simulation by Silvaco TCAD software, good performance is displayed in the transfer and output characteristics. For a simple half-wave rectifier circuit with a load of 1 pf and 20 kΩ, the rectification efficiency of the device can reach 7.14% at an input power of –10 dBm, which is 4.2 times that of a Si MOSFET (with a threshold voltage of 80 mV) under the same conditions; this device shows a better rectification effect than a Si MOSFET in the range of –30 dBm to 6.9 dBm.

CALCULATION OF THE MAGNETISING COIL FOR IMPROVING THE MAGNETIC SEPARATION

A coil intended for magnetisation of finely ground magnetite ores during secondary extraction of iron is considered. It is in the shape of a cylindrical ring and is strung on the pulp tube, which is made of non-magnetic and non-conductive material. The coil has known dimensions of the inner diameter and length, obtained for technological reasons. A direct current with a large alternating current component flows through the coil, formed by a diode half-wave rectifier circuit. A methodology is given for determining the electrical parameters of the winding at a given mains supply voltage, heat load and cooling conditions.

An Electrocatalytic Reaction As a Basis for Chemical Computing in Water Droplets.

Aqueous droplets covered with amphiphilic Janus Au/Fe3O4 nanoparticles and suspended in an organic phase serve as building blocks of droplet-based electronic circuitry. The electrocatalytic activity of these nanoparticles in a hydrogen evolution reaction (HER) underlies the droplet's ability to rectify currents with typical rectification ratios of ∼10. In effect, individual droplets act as low-frequency half-wave rectifiers, whereas several appropriately wired droplets enable full-wave rectification. When the HER-supporting droplets are combined with salt-containing "resistor" ones, the resulting ensembles can act as AND or OR gates or as inverters.

Detection of nitrogen atoms as dopants in a zinc oxide crystal lattice incorporated by the effect of a cooling method in a thin film bilayer scheme

The zinc oxide semiconductor can be directed towards p-type or n-type electrical performance depending on the synthesis conditions and fabrication methods, ranging from chemical, sol gel to physical vapor deposition procedures, or the one used in this work: reactive sputtering. Usually this binary oxide, in thin film form, synthesizes into an n-type semiconductor if is fabricated by means of the reactive sputtering method, using an oxygen-poor atmosphere and specific deposition conditions, already established above. However, due to an accident in the synthesis, it was possible to determine the effect that the typical atmosphere at normal atmospheric pressure with 78% nitrogen had on the expected zinc oxide lattice if was abruptly integrated over the scheme. The verification was done using a scratch angle X-ray diffraction characterization, which evidences the incorporation of nitrogen atoms into the zinc oxide crystal by the widening of the lattice parameters. The experimental arrangement analyzed was a bilayer scheme with a first film of n-type zinc oxide and, on this, a second film of the same oxide but p-type. It was possible to conclude that, apart from the desired diode-like behavior of the bilayer, evidenced by the assembly of the half-wave rectifier, there was also evidence of the incorporation of nitrogen in the crystal lattice in the second layer by the notorious shift of the diffraction peak (101).