The intermediate bands materials CuGa1-xQxS2 (Q = Ge, Sn) were investigated, and the narrow half-filled intermediate bands were successfully introduced into the chalcopyrite CuGaS2 when Ga3+ ion were partially replaced by Ge4+(Sn4+) impurities. The absorption edge of CuGa1-xQxS2 red shifts greatly with the increasing in the doping content due to the form of Ge-4s (Sn-5s) and S-3p hybridization orbits intermediate band, even small Q-doping content(2mol %), considerable red shifts are still achieved. CuGa1-xQxS2 (Q = Ge, Sn) with IBs extend the range of solar spectrum and could be the excellent candidates for the theoretical predictions of enhanced solar cell efficiency.