Intermetallic Compound Growth Rate Research Articles

Nucleation and growth behavior of primary Al11Ce3 intermetallic compounds during solidification in a hypereutectic Al–Ce alloy

In this study, the nucleation and growth mechanisms of Al11Ce3 intermetallic compounds (IMCs) in a hypereutectic Al–Ce alloy during solidification were investigated through synchrotron radiation X-ray real-time imaging. The results showed that Al11Ce3 IMCs nucleate and grow from the melt as the primary phase at the initial stage of solidification. Growth preferred orientations were observed in two opposite directions, resulting in an I-shaped growth pattern. Based on the minimum energy criterion, the morphology of Al11Ce3 IMCs displayed either hollow cubic tubes or grooves. The nucleation and growth rates of Al11Ce3 IMCs gradually decreased over time, owing to the variations in the Ce concentration in the melt and the undercooling. The nucleation and growth characteristics of Al11Ce3 IMCs can provide the theoretical basis for optimization on the performance of Al–Ce alloys.

A Study on the Effect of Pd Layer Thickness on the Properties of Cu-Ag Intermetallic Compounds at the Bonding Interface.

This paper conducted a high-temperature storage test (HTST) on bonded samples made of Pd100 (Pd-coated Cu wire with a Pd layer thickness of 100 nm) and Pd120, and studied the growth law of Cu-Ag intermetallic compounds and the inhibitory mechanism of Pd thickness on Cu-Ag intermetallic compounds. The results show that the Kirkendall effect at the bonding interface of the Pd100-bonded sample is more obvious after the HTST, the sizes of voids and cracks are larger, and the thickness of intermetallic compounds is uneven. But, the bonding interface of the Pd120-bonded sample has almost no microcracks, the Kirkendall voids are small, and the intermetallic compound size is uniform and relatively thin. The formation sequence of intermetallic compounds is as follows: Cu atoms diffuse into the Ag layer to form Ag-rich compounds such as CuAg4 or CuAg2, and then the CuAg forms with the increase in diffused Cu elements. Pd can significantly reduce the Kirkendall effect and slow down the growth of Cu-Ag intermetallic compounds. The growth rate of intermetallic compounds is too fast when the Cu bonding wire has a thin Pd layer, which results in holes and microcracks in the bonding interface and lead to the peeling of the bonding interface. Voids and cracks will hinder the continuous diffusion of Cu and Ag atoms, resulting in the growth of intermetallic compounds being inhibited.

A level set approach to modelling diffusional phase transformations under finite strains with application to the formation of [formula omitted]

This paper presents a sharp interface formulation for modelling diffusional phase transformations. Grain boundary motion is, in accordance with diffusional phase transformation kinetics, determined by the amount of flux towards the interface and is formulated in a level set framework. This approach enables a computational efficiency that can be expected to be higher than what can be achieved with conventional phase field methods. Compatibility of the interfaces is obtained through an interface reconstruction process, in which the locations of triple junction points are also determined. To ensure local equilibrium and a continuous chemical potential across the interfaces, the chemical composition is prescribed at the phase interfaces. The presented model is used to study the growth of the intermetallic compound (IMC) Cu6Sn5 for a system with Sn electroplated on a Cu substrate. A finite strain formulation is incorporated into the model to investigate the effects of the volume change resulting from the IMC formation. In this formulation, the Cu and Sn phases are allowed to deform plastically. The numerical simulations demonstrate IMC growth rates in agreement with experimental measurements. Moreover, the IMC evolves into a scallop-like morphology, consistent with experimental observations.

Influence of Pd-Layer Thickness on Bonding Reliability of Pd-Coated Cu Wire.

In this paper, three Pd-coated Cu (PCC) wires with different Pd-layer thicknesses were used to make bonding samples, and the influence of Pd-layer thickness on the reliability of bonded points before and after a high-temperature storage test was studied. The results show that smaller bonding pressure and ultrasonic power lead to insufficient plastic deformation of the ball-bonded point, which also leads to small contact area with the pad and low bonding strength. Excessive bonding pressure and ultrasonic power will lead to 'scratch' on the surface of the pad and large-scale Ag spatter. The wedge-bonded point has a narrowed width when the bonding pressure and ultrasonic power are too small, and the tail edge will be cocked, resulting in false bonding and low strength. When the bonding pressure or ultrasonic power is too large, it will cause stress concentration, and the pad will appear as an 'internal injury', which will improve the failure probability; a high-temperature environment can make Cu-Ag intermetallic compounds (IMCs) grow and improve the bonding strength. With the extension of high-temperature storage time, the shear force of Pd100 gradually reaches the peak and then decreases, due to Kirkendall pores caused by excessive growth of IMCs, while the shear force of Pd120 continued to increase due to the slow growth rate of IMCs. In the high-temperature storage test, the thicker the Pd layer of the bonding wire, the higher the bonding strength; in the cold/hot cycle test, the sample with the largest Pd-layer thickness has the lowest failure rate. The thicker the Pd layer, the stronger its ability to resist changes in the external environment, and the higher its stability and reliability.

Reactive diffusion at the interface between Cu and Sn–Ag alloys

This study investigates the microstructural evolution and growth behavior of intermetallic compound (IMC) layers in the Cu/(Sn-yAg, y = 0.29–2.00 wt%) system during isothermal aging within the temperature range of 433–473 K. Through systematic variations in Ag content, aging temperature, and time, the fundamental mechanisms governing IMC formation and growth in Cu/(Sn–Ag) solder joints are elucidated. The results demonstrate that IMC growth kinetics follow a power-law relationship, with IMC layer thickness increasing systematically with annealing time. The addition of Ag significantly influences IMC nucleation and growth, with higher Ag content correlating with faster growth rates. Furthermore, the temperature dependence of IMC growth rates is investigated, revealing higher temperatures leading to increased growth rates, indicative of boundary diffusion-controlled growth. By calculating activation enthalpies, values of 36.4 kJ/mol for Sn-2.00Ag and 30.2 kJ/mol for Sn-0.50Ag were obtained, providing quantitative insights into the faster growth rate of intermetallic compound thickness in the Cu/(Sn-2.00Ag) diffusion couple within the experimental temperature range. These findings offer valuable insights into factors affecting the reliability and performance of solder joints in electronic packaging applications.

Improved Cu/Sn interface reliability using double-layer stacked nano-twinned Cu

The immoderate growth of intermetallic compound (IMC) at the Cu/Sn bonding interface reduces the reliability of bonding joints, leading to the failure of high-density packaging. Herein, we design a double-layer nanotwinned Cu (d-ntCu) structure composed of the perpendicularly aligned nano-twinned Cu (p-ntCu) as the upper layer and horizontally aligned nano-twinned Cu (h-ntCu) as the lower layer. We study the Cu/Sn bonding interface microstructure evolution to reveal the IMC growth inhibition and void suppression ability of d-ntCu. As a comparison, the interface microstructure evolution of single layer h-ntCu/Sn is also studied. After thermal aging, the growth mode of IMC at the Cu/Sn bonding interface can be divided into two stages, which are caused by the in-situ annealing of the p-ntCu. In the initial stage of aging, the main diffusion path of Cu atoms is twin boundary diffusion, causing a rather fast growth of IMC. After 100 h aging, the twins anneal into large grains, which induce a lower growth rate of IMC due to the bulk diffusion of Cu atoms. Compared with the h-ntCu single layer, the IMC thickness of the d-ntCu is suppressed by 20%. Besides, the bonding interface in d-ntCu/Sn is void-free due to the vacancy-sink effect of twin boundaries. Therefore, using d-ntCu as the substrate can not only control the IMC growth rate but also suppress the formation of voids during aging, which is helpful to achieve high bonding reliability.

To suppress thermomigration of Cu–Sn intermetallic compounds in flip-chip solder joints

We report here an approach to inhibit Cu–Sn intermetallic compounds (IMCs) in flip chip solder joints under thermal-gradient annealing. We reflowed two types of solders joints, Cu/SnAg/Cu and Cu/SnAg/Ni, in an oven (isothermal) and on a hot plate (with thermal-gradient) at 260 °C. During the isothermal reflow, the IMC growth rates in the top and bottom sides of the solder joint were ∼4.0 × 10−2 and 8.9 × 10−2 μm/min, respectively. However, the IMC growth rate increased to 7.8 × 10−1, 7.9 × 10−1, and 8.9 × 10−1 μm/min in the cold ends with low, medium, and high thermal gradients, respectively. Yet, the IMC thickness on the hot ends remained almost unchanged. These results indicate that the thermal gradient has facilitated the Cu–Sn IMC formation in the cold ends. But, when a Ni film was sandwiched at the cold end, the IMC growth rates in the cold end were reduced to ∼9.7 × 10−2, 1.4 × 10−1, and 1.5 × 10−1 μm/min with low, medium, and high thermal gradients, respectively, indicating that the thermomigration of IMCs was retarded by the Ni. It is speculated that the Ni layer transformed the IMCs on the hot end into stable (Cu,Ni)6Sn5 ternary IMCs, and thus the thermomigration of Cu was suppressed. A kinetic model is also proposed to address the competitive reactions of Cu-molten solder joints.

Intermetallic compound evolution and mechanical properties of Cu/Sn58Bi/Cu 3D structures blended with B4C nanoparticles during isothermal aging

The Cu/Sn58Bi/Cu and Cu/Sn58Bi-0.6B4C/Cu joints were prepared by transient liquid phase (TLP) bonding technology to verify the reliability of low-temperature connection joints. Intermetallic compound (IMC) evolution at the interface under different isothermal aging times was analyzed, and the mechanical properties of the joints were tested. The results show that two kinds of IMC, lamellar Cu3Sn and fan-shaped Cu6Sn5, are formed on both sides of the joint. With increasing soldering time, the thickness for both kinds of IMC become thicker, and it is significantly thicker for the IMC near the cold end. Furthermore, the IMC growth rate of the Cu/Sn58Bi-0.6B4C/Cu solder joint is significantly lower. When the isothermal aging time reaches 36 h, the Cu/Sn58Bi/Cu joint has been almost composed of IMC, while it needs a longer time for the Cu/Sn58Bi-0.6B4C/Cu joint. The growth of Cu3Sn IMC is in line with parabolic law, being mainly controlled by volume diffusion near the hot end, while the grain boundary diffusion significantly affects it at the cold end. The joints shear strength decreases gradually with extending bonding time, but it is always higher for the Cu/Sn58Bi-0.6B4C/Cu joint. When the heating time is not long, the fracture mainly appears at the Bi-rich phase in the solder matrix. With increasing bonding time, the location of fracture gradually transformed from the Cu6Sn5 grains to the junction of the two IMC and Cu3Sn grains, along with the intercrystalline fracture and transcrystalline fracture. In summary, B4C nanoparticles can significantly improve the joint reliability and enhance its mechanical properties.

Effect of IMC Thickness on the Mechanical Properties of Microbumps

With the continuous development of electronic products towards high density and small size, the size of interconnecting solder joints also continues to decrease. Under normal service conditions, micro-solder joints will be subjected to multiple loads at the same time, which in turn will cause many reliability problems in the package structure. This paper focuses on the growth pattern of IMC (Intermetallic compounds) during hot-press bonding and analyses its effect on the shear strength and creep properties of copper pillar micro-bumps. Firstly, the solder joints with different IMC thicknesses were obtained by adjusting the bonding parameters during the thermal compression bonding process, and the growth pattern of IMC during the thermal compression bonding process was analyzed. Secondly, shear experiments were conducted on solder joints with different IMC thicknesses, and the effects of IMC on the shear strength and shear fracture mode of solder joints were analyzed. Finally, creep experiments were performed on cylinder-shaped solder joints with different IMC thicknesses under different stress conditions. The results show that throughout the bonding process, copper atoms migrate under the combined effect of temperature gradient (JTM) and concentration gradient (JCM), and IMC shows asymmetric growth, and the growth rate of IMC gradually decreases with the increase of bonding holding time. Under the same temperature conditions, the shear strength of the solder joint shows a trend of increasing and then decreasing with the increase of holding time. In addition, with the increase of IMC thickness, the shear fracture mode of solder joints changes from ductile fracture in the initial stage to tough-brittle combination fracture and finally evolves to brittle fracture. With the continuous increase of stress, the steady-state creep strain rate of all solder joints increases, and the fracture location tends to be closer to the intersection of the solder and the copper pillar from inside the solder joint. With the increase of IMC thickness, the steady-state creep strain rate of solder joints shows a trend of decreasing and then increasing.

Interfacial intermetallic compound modification to extend the electromigration lifetime of copper pillar joints

Electromigration is the massive metal atom transport due to electron flow, which could induce a disconnect in electronics. Due to the size of copper pillar bump reduction, the portion of interfacial intermetallic compound in solder joints is increasing obviously. However, there is lack of systematical research on the effects of intermetallic compound on the EM lifetime of solder joints. In this paper, the interfacial intermetallic compound of copper pillar joints is modified to extend the electromigration lifetime. The growth rate of intermetallic compound in solder joints sample is calculated firstly. From 230°C to 250°C, the growth rate of intermetallic compound increases from 0.09 μm/min to 0.19 μm/min. With a longer reaction time, the intermetallic compound layers continuously grow. Then electromigration tests were conducted under thermo-electric coupling loading of 100°C and 1.0 × 104 A/cm2. Compared with lifetime of thin and thick intermetallic compound samples, the lifetime of all intermetallic compound sample improved significantly. The lifetime of thin, thick, and all intermetallic compound samples is 400 min, 300 min, and 1,200 min, respectively. The failure mechanism for the thin intermetallic compound sample is massive voids generation and aggregation at the interface between solder joints and pads. For the thick intermetallic compound sample, the intermetallic compound distance is short between cathode and anode in solder joints, leading to lots of crack create in the middle of solder joints. As the all intermetallic compound sample can greatly reduce the number of voids generated by crystal structure transforming, the lifetime extend obviously.

Evaluation of Growth Rate of Intermetallic Compound during Dissimilar Laser Brazing of Steel and Aluminum alloy using Al-Si Filler Metal

Evaluation of Growth Rate of Intermetallic Compound during Dissimilar Laser Brazing of Steel and Aluminum alloy using Al-Si Filler Metal

Novel Sn-0.7Cu composite solder reinforced with ultrafine nanoscale nickel particles/porous carbon

In this study, the nickel-based metal organic framework (Ni-MOF) was carbonized at high temperature and the nanoscale nickel particles anchored in the carbon skeleton ([email protected]) with flake structure were obtained. The composite solders were subsequently prepared successfully by adding the [email protected] flakes to Sn-0.7Cu solder. The effects of [email protected] on the properties, microstructure and interface reaction of the Sn-0.7Cu solders were systematically investigated. The results showed that the [email protected] flakes had a negligible effect on the melting point of the solders and improved the wettability significantly. The wetting angle decreased by 15.04% when the [email protected] was 0.08 wt% in content. In addition, the size of matrix β-Sn grains were significantly reduced and the matrix β-Sn grains appeared very fine structure after adding the [email protected] flakes. Meanwhile, the elongated (Cu, Ni)6Sn5 phase transformed from rod-shape to dot-shape. During the reflow process, the morphologies of intermetallic compounds (IMCs) gradually changed from shell-shaped to continuously planar, and their thickness decreased by 26.6%. The (Cu, Ni)6Sn5 forming at the interface and the porous carbons distributing in solder matrix effectively hindered the diffusion of Cu and Sn respectively and retarded the growth rate of IMCs.

Surface protrusion induced by inter-diffusion on Cu-Sn micro-pillars

With downward scaling of the micro-bumps in three-dimensional integrated circuits, surface inter-diffusion becomes dominant, changing the kinetic path of intermetallic compounds (IMC) formation and causing serious reliability issues. However, an in-depth understanding of the surface inter-diffusion process and the corresponding influence on the formation mechanism of IMC in a micro-bump remain unclear. We conducted annealing at 170 ℃, over 16 h for pillar type Sn/Cu micro-bumps and observed a unique 2-step sidewall Cu3Sn IMC formation phenomenon on the FIB-cut clean surface of the micro-bumps. It is found the two-step sidewall IMC formation is dominated by the surface inter-diffusion of Sn and Cu atoms. Density functional theory calculations reveal that the activation energy barrier of nucleation for sidewall Cu3Sn IMC is about 1/3 of that of sidewall Cu6Sn5 on corresponding interfacial IMC layers, making the formation of sidewall Cu3Sn dominant. Moreover, we proposed a kinetic model that can predict the mean lateral growth rate of the sidewall IMC which may cause fatal short-circuit failure.

Effect of indium on microstructure, mechanical properties, phase stability and atomic diffusion of Sn-0.7Cu solder: Experiments and first-principles calculations

Sn-0.7Cu–In ternary alloy solders have received much attention because of their excellent weld stability and wettability. However, how to inhibit or slow down the formation of defects at the welding interface has always been the focus of research. The effects of In on melting point and microstructure of Sn-0.7Cu solders and phase stability and growth rate of intermetallic compounds (IMCs) in the solders were investigated by means of experiments and first-principles calculations. The Rietveld refinement results showed that the lattice constants of β-Sn and η′-Cu6Sn5 (Cu6Sn5) phases increase after In addition. Moreover, In can decrease the melting point, but increase the melting range of Sn-0.7Cu solders. After adding In, the ultimate tensile strength (UTS) increases, while the elongation decreases. From the first-principles calculation results, the stability of Cu6Sn5 increases after In doping, and In doping results in the formation of new chemical bonds between In atom and the neighboring Cu and Sn atoms. Ultimately, the diffusion activation energy and atomic migration barrier of the Cu atom increase after In doping, which in turn decreases the growth rate of Cu6Sn5.

Thermal aging effects on the properties of the Cu/(SAC0307 powder + Zn-particles)/Cu joint ultrasonic-assisted soldered at low-temperature

PurposeThis study aims to evaluate the effect of thermal aging temperature on the properties of Cu/Cu joints.Design/methodology/approachA new method that 1 um Zn-particles and Sn-0.3Ag-0.7Cu (SAC0307) with a particle size of 25–38 µm were mixed to fill the joint and successfully achieved the micro-joining of Cu/Cu under ultrasonic-assisted at low-temperature, and then the effect of thermal aging temperature on the properties of Cu/Cu joints was researched.FindingsThe composition of the intermetallic compounds (IMCs) on the upper and lower interfaces of Cu/SACZ/Cu joints remained unchanged, which was Cu5Zn8 in aging process, and the thickness of the IMCs on the upper and lower interfaces of the Cu/SACZ/Cu joints increased accordingly. Compared with the as-received joints, the thickness of the upper and lower interfaces IMCs of the soldering aged time for 24 h increased by 404.7% and 505.5% at 150ºC, respectively. The IMCs formation tendency and the IMCs growth rate of the lower interface are larger than those of the upper interface because the soldering seam near the IMCs at the upper and lower interfaces of the as-received joints were mostly white SAC0307 balls black Zn-particles, respectively. The growth activation energy of IMCs in the upper and lower interfaces is about 89.21 and 55.11 kJ/mol, respectively. Under the same aging time, with the increase of the aging temperature, the shear strength of Cu/SACZ/Cu joints did not change significantly at first before 150ºC. When the aging temperature reached 150ºC, the shear strength of the joints decreased significantly; the shear strength of the joints was the smallest at 150ºC for 24 h, which was 39.4% lower than that of the as-received joints because the oxidation degree of Zn particles in the joint with the increase of aging temperature and time.Originality/valueCu/Cu joints were successfully achieved under ultrasonic-assisted at low-temperature.

Interfacial structures and mechanical properties of Cu/Sn/Cu containing SiC nanowires under transient liquid phase bonding

In order to achieve low-temperature bonding and high-temperature service, Cu/Sn/Cu and Cu/Sn-0.6SiC/Cu structure were fabricated by transient liquid phase (TLP) bonding, and the microstructure evolution of intermetallic compound (IMC) and mechanical performance of TLP bonding solder joints were investigated. The results demonstrated that the scalloped Cu6Sn5 IMC and lamellar Cu3Sn IMC formed at Sn/Cu interface gradually grew up in both solder joints as the bonding time increased. The asymmetrical growth of IMC was formed on both sides at TLP solder joints interface, whereas the interfacial IMC growth rate of Cu/Sn-0.6SiC/Cu was smaller than that of Cu/Sn/Cu solder. After TLP bonding for 120 min, Cu/Sn/Cu structure was composed of total Cu6Sn5 and Cu3Sn IMC and Cu/Sn-0.6SiC/Cu structure still contained remaining Sn phase. SiC nanowires (SiC NWs) dispersed in the solder matrix could impede the growth path between Sn and Cu, so SiC NWs doped to Sn solder could slow down the IMC growth. Moreover, introducing SiC NWs could promote the shear strength of composite solder compared with Sn solder joints during TLP bonding.

Board-level drop properties of Sn–49Bi–1Ag/Sn–3.0Ag–0.5Cu hybrid solder joints assembled by low-temperature soldering

The Cu/Sn–49Bi–1Ag/Sn–3.0Ag–0.5Cu/Ni–P hybrid solder joints for customer electronics were assembled by low-temperature soldering at 170–200°C. The relationship between microstructural evolution and board-level drop failure mechanism of these solder joints during aging at 110°C was investigated. The Bi-rich zone increased from 24.98to 78.85% with increasing soldering temperature from 170 to 200°C. The growth rate of intermetallic compound (IMC) in 170-SAC/SB solder joints was approximately 3 times faster than that in 200-SAC/SB solder joints. The drop failure mechanism was explained that the drop-induced crack propagation path shifted from Bi phases in the as-soldered joints to the solder/Cu6Sn5 interface in the aged joints, since the interfacial Cu6Sn5 IMC grew thicker with increasing aging time.

Electrical and thermal stability of Al-Cu welds: Performance benchmarking of the hybrid metal extrusion and bonding process

Advances in joining processes for aluminum and copper are sought after to facilitate the greater adoption of aluminum in electrical applications. Aluminum's chemical affinity to copper causes the joining and lifetime of Al-Cu welds to be vulnerable to the formation of various intermetallic compounds. Intermetallic compounds and the resulting weld structure are known to reduce the structural integrity and increase the electrical resistance of Al-Cu welds. In this study we evaluate the novel joining process, Hybrid Metal Extrusion and Bonding, for butt welding aluminum and copper. The weld structure was examined using scanning and transmission electron microscopy, and the weld resistance was measured using four-point measurements forecast to the weld interface. Energy dispersive spectroscopy and electron diffraction zone axis patterns were analysed to identify intermetallic compounds. Weld samples were examined pre and post heat treatment at 200 °C, 250 °C and 350 °C for total durations of over 1000 h. The results are compared to existing Al-Cu joining processes, and a new metric, weld interface resistivity, is proposed to compare the electrical properties of bimetallic welds. The Hybrid Metal Extrusion and Bonding process was found to form a thin, consistent and straight intermetallic layer with negligible impact on electrical resistance in the as-welded condition. Artificial ageing of samples by heat treatment established the overall growth rate of intermetallic compounds. The growth rate was used to evaluate the weld's operational lifetime versus temperature. The intermetallic growth rate of Hybrid Metal Extrusion and Bonding was quantified at 200 °C and compared to alternative processes. The Hybrid Metal Extrusion and Bonding process showed a significant performance advantage requiring the longest time to reach 2 μm thickness. Furthermore, the growth of intermetallic compounds did not increase the electrical resistance of the weld interface. The negligible impact on electrical resistance and slow intermetallic growth are promising results of the potential functional performance. This study is the first characterisation of the Hybrid Metal Extrusion and Bonding process for electrical applications showcasing its exciting potential for the joining of aluminum and copper.

Controlling the distribution of porosity during transient liquid phase bonding of Sn-based solder joint

The rapid growth of (Cu,Ni)6Sn5 intermetallic compounds (IMCs) when Sn reacts with Cu containing 6 wt%Ni (Cu-6Ni) offers huge potential for resolving the lengthy transient liquid phase (TLP) processing time. However, the uncontrolled formation of voids at the centre of the joint remains a serious issue. Therefore, we have studied the influence of different Ni concentrations (0, 2 and 6 wt%) in the Cu substrate and the relative location of the porosity when reacting with Sn-0.7Cu solder in the sandwich structure of the joint. Through in-situ X-ray microradiography, the changes in the void positions and the reaction time required to form the IMC joints was interpreted with reference to growth kinetics equations. The results indicate that the different growth rates of (Cu,Ni)6Sn5 and Cu6Sn5 IMCs due to the different Ni concentrations of the Cu-Ni substrates can control the location of the porosity and influence the shear strength of the TLP lap joint. This discovery is a potential gateway to developing reliable electronic interconnects for the power device industry.

Systematic investigation of the effect of Ni concentration in Cu-xNi/Sn couples for high temperature soldering

High temperature solders have experienced a marked increase in demand due to the boom of high power interconnects in electric vehicles and the miniaturisation of electronic devices. Transient liquid phase (TLP) bonding is a promising technology for these applications. Alloys from the Cu-Sn system widely used in conventional soldering processes have potential for high temperature applications if the relatively low melting point Sn phase can be consumed in a TLP process. This process results in a joint composed of Cu6Sn5 or Cu3Sn intermetallic compounds (IMCs) which have higher melting points than Sn. Alloying Ni to the Cu substrate promotes the growth rate of the (Cu,Ni)6Sn5 IMCs, significantly reduces the TLP processing time and costs, while suppressing the formation of (Cu,Ni)3Sn. However, the properties of the (Cu,Ni)6Sn5 formed also change significantly depending on the Ni concentration in the system. In this work, the composition, morphology, grain sizes and crystal structure of the (Cu,Ni)6Sn5 formed via the reaction of Sn and Cu-xNi substrates of different Ni concentrations are studied in detail via electron microscopy and synchrotron powder X-ray diffraction to provide a basis for further understanding of the physical, electrical and mechanical properties. The findings are further verified by density functional theory calculations. Additionally, the complex interplay of grain boundary diffusion rates and the IMC nucleation rate which accelerate with increasing Ni concentration, along with the Cu-xNi dissolution rate and the crystal growth rate which decrease with increasing Ni concentration are identified to be the main factors affecting the IMC growth rates.