Growth Of Selenides Research Articles

Development of new deep drawing steels by doping with surface active elements

In this study, the effects of doping with the surface‐active elements Ge, Te, Se, As, Sb and Sn in atomic mass contents of 10 to 200 ppm on the texture and drawability of an IF‐steel (FeP06, DIN‐EN 10130) and an ELC‐steel (FeP05, DIN‐EN 10130) were investigated. Twenty‐six ingots were produced by melting and doping in a vacuum‐induction furnace, followed by forging, hot‐rolling and cold‐rolling. The cold‐rolling reduction was ɛ = 72 %. Recrystallization annealing was performed in a batch‐annealing simulation furnace. Subsequently, the orientation distribution function (ODF) and the α, γ, η‐fibre textures of both the cold‐rolled and recrystallized state were measured by means of an X‐ray diffraction goniometer and compared with the undoped reference material.The results indicate that the IF‐steel specimens doped with 100 ppm Te and Se show a significantly enhanced γ‐fibre {111}<110>‐{111}<112> texture compared to the reference specimen. Also the ELC‐steel specimens showed a higher γ‐fibre by doping with atomic mass contents of 10 to 100 ppm Se and Te. To investigate whether the drawability has been improved, Lankford‐value (rm and Δr) measurements by means of tensile tests were applied. The compositions with improved γ‐fibre also showed higher r‐values and therefore confirmed the results of the texture measurements. Se doping was found to be especially beneficial in texture and drawability for both investigated materials. The growth of selenides and tellurides at the surface of Ti4C2S2‐ and Ti2S‐ precipitates was observed by means of scanning transmission electron microscope linescans equipped with field emission gun (STEM‐FEG). Doping with Sb and Sn rendered no notable improvement of the materials, and Ge and As proved to affect the mechanical properties unfavourably.

The growth of group II–VI crystals in gels

Experiments relating to the gel-growth of selected group II–VI semiconductor compounds in single crystal form are described. Single lead sulphide crystals with relatively low etch pits density and a size of 1-1.5 mm have been grown in silica gels. α-mercuric sulphide crystals, 0.1-0.15 mm in size have been successfully grown in polyacrylamide gels. The growth of cadmium sulphide crystals has resulted in either spherulites or dendrites depending mainly upon the cadmium ion source used. The experimental problems associated with the successful growth of cadmium, zinc, lead and copper selenides and tellurides are discussed, and the specific proposed solutions are described. Experiments on the growth of selenides have resulted in excessive nucleation and the successful growth of these crystals, therefore, depends on a better control of supersaturation in the growth systems. Attempts to grow single telluride crystals of Cd, Zn, and Pb were unsuccessful.