Abstract
Experiments relating to the gel-growth of selected group II–VI semiconductor compounds in single crystal form are described. Single lead sulphide crystals with relatively low etch pits density and a size of 1-1.5 mm have been grown in silica gels. α-mercuric sulphide crystals, 0.1-0.15 mm in size have been successfully grown in polyacrylamide gels. The growth of cadmium sulphide crystals has resulted in either spherulites or dendrites depending mainly upon the cadmium ion source used. The experimental problems associated with the successful growth of cadmium, zinc, lead and copper selenides and tellurides are discussed, and the specific proposed solutions are described. Experiments on the growth of selenides have resulted in excessive nucleation and the successful growth of these crystals, therefore, depends on a better control of supersaturation in the growth systems. Attempts to grow single telluride crystals of Cd, Zn, and Pb were unsuccessful.
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