Since the discovery of Graphene, 2D materials have attracted wide research curiosity due to their unique properties and potential applications. The new class of 2D materials such as transition metal dichalcogenides (TMDs) is gaining tremendous popularity due to its intrinsic bandgap, while single-layer graphene lacks a finite bandgap and is considered a bottleneck for various electronic applications. In recent years, MoS2 and WS2 have widely explored TMDs for fundamental properties and applications due to the intrinsic bandgap and high carrier mobility. To demonstrate the realisation of 2D materials, various growth mechanisms were developed, including mechanical exfoliation, liquid-phase exfoliation, chemical vapour deposition (CVD), and so on. However, a bottom-up physical vapour deposition technique, especially pulsed laser deposition (PLD) was routinely utilised for complex oxide thin film growth and can be considered a potential alternative to commonly reported CVD method for realising 2D layers. Large-scale device fabrication of 2D materials and thus the commercialisation of these materials requires a large area growth mechanism. In the present work, the wafer-scale growth of 2D TMDs such as MoS2 and WS2 is discussed. Raman spectroscopy is used to identify the number of layers of the grown thin films.