Grown Silicon Dioxide Research Articles

Electron irradiation induced amorphous SiO2 formation at metal oxide/Si interface at room temperature; electron beam writing on interfaces

Al2O3 (5 nm)/Si (bulk) sample was subjected to irradiation of 5 keV electrons at room temperature, in a vacuum chamber (pressure 1 × 10−9 mbar) and formation of amorphous SiO2 around the interface was observed. The oxygen for the silicon dioxide growth was provided by the electron bombardment induced bond breaking in Al2O3 and the subsequent production of neutral and/or charged oxygen. The amorphous SiO2 rich layer has grown into the Al2O3 layer showing that oxygen as well as silicon transport occurred during irradiation at room temperature. We propose that both transports are mediated by local electric field and charged and/or uncharged defects created by the electron irradiation. The direct modification of metal oxide/silicon interface by electron-beam irradiation is a promising method of accomplishing direct write electron-beam lithography at buried interfaces.

Charge carrier transport mechanisms of passivating contacts studied by temperature-dependent J-V measurements

The charge carrier transport mechanism of passivating contacts which feature an ultra-thin oxide layer is investigated by studying temperature-dependent current-voltage characteristics. 4-Terminal dark J-V measurements at low temperatures reveal non-linear J-V characteristics of passivating contacts with a homogeneously grown silicon oxide, which result in an exponential increase in contact resistance towards lower temperature. The attempt to describe the R(T) characteristic solely by thermionic emission of charge carriers across an energy barrier leads to a significant underestimation of the resistance by several orders of magnitude. However, the data can be described properly with the metal-insulator-semiconductor (MIS) theory if tunneling of charge carriers through the silicon oxide layer is taken into account. Furthermore, temperature-dependent light J-V characteristics of solar cells featuring passivating contacts at the rear revealed a FF drop at T < 205K, which is near the onset temperature of the exponential increase in contact resistivity.

Fabrication of omnidirectional anti-reflection and super hydrophilicity SiO2 nanorods by oblique angle deposition

Growth of silicon dioxide (SiO2) nanorods were fabricated via electron beam evaporation with oblique angle deposition technique approach at different film thickness. The morphologies, optical and wettability properties were characterized by field-emission scanning electron microscopy, spectrophotometry with angle dependence technique and contact angle measurement, respectively. Compared with that on the SiO2 thin films, the transmission on the SiO2 nanorods is significantly improved. The transmission is decreased with the height of the SiO2 nanorods. In addition, the result indicated that the SiO2 nanorods provide enhancement wettability which can function as the super-hydrophilicity surface. The experiment analysis of the thickness dependence omnidirectional anti-reflection and super-hydrophilic characteristics will benefit the design of self-cleaning glass application.

Low-resistivity α-phase tungsten films grown by hot-wire assisted atomic layer deposition in high-aspect-ratio structures

In this work, the so-called hot-wire (HW) assisted atomic layer deposition (HWALD) technique is employed to grow high-purity α-phase tungsten (W) films at a substrate temperature of 275°C. The films are deposited on thermally grown silicon dioxide (SiO2) in a home-built hot-wall reactor, using alternating pulses of WF6 and HW-generated atomic hydrogen in the self-limiting surface-reaction manner characteristic for ALD. A W seed layer, needed to enable the HWALD-W process on a SiO2 surface, is formed prior to each deposition. In-situ spectroscopic ellipsometry is used to monitor the growth behavior and film properties. The films exhibit a high-purity (99at.%) W, according to X-ray photoelectron spectroscopy. The X-ray diffraction scans reveal the existence of α-phase W. The resistivity measurements by means of four point probe, transfer length method test structures and the Drude-Lorentz SE model all reveal a low resistivity of 15μΩ·cm. The high-resolution transmission electron microscopy analysis shows a uniform and conformal coverage of high aspect ratio structures, confirming the effective ALD process and the sufficient diffusion of both WF6 and at-H into deep trenches.

Enhanced nickelidation rate in silicon nanowires with interfacial lattice disorder

We demonstrate that the nickelidation (nickel silicidation) reaction rate of silicon nanowires (SiNWs) surrounded by a thermally grown silicon dioxide (SiO2) film is enhanced by post-oxidation annealing (POA). The SiNWs are fabricated by electron beam lithography, and some of the SiNWs are subjected to the POA process. The nickelidation reaction rate of the SiNWs is enhanced in the samples subjected to the POA treatment. Ultraviolet Raman spectroscopy measurements reveal that POA enhances compressive strain and lattice disorder in the SiNWs. By considering these experimental results in conjunction with our molecular dynamics simulation analysis, we conclude that the oxide-induced lattice disorder is the dominant origin of the increase in the nickelidation rate in smaller width SiNWs. This study sheds light on the pivotal role of lattice disorders in controlling metallic contact formation in SiNW devices.

Excess oxygen limited diffusion and precipitation of iron in amorphous silicon dioxide

In micro- and nano- electronic device fabrication, and particularly 3D designs, the diffusion of a metal into sublayers during annealing needs to be minimized as it is usually detrimental to device performance. Diffusion also causes the formation and growth of nanoprecipitates in solid matrices. In this paper, the diffusion behavior of low energy, low fluence, ion implanted iron into a thermally grown silicon oxide layer on silicon is investigated. Different ion beam analysis and imaging techniques were used. Magnetization measurements were also undertaken to provide evidence of nanocrystalline ordering. While standard vacuum furnace annealing and electron beam annealing lead to fast diffusion of the implanted species towards the Si/SiO2 interface, we show that furnace annealing in an oxygen rich atmosphere prevents the diffusion of iron that, in turn, limits the growth of the nanoparticles. The diffusion and particle growth is also greatly reduced when oxygen atoms are implanted in the SiO2 prior to Fe implantation, effectively acting as a diffusion barrier. The excess oxygen is hypothesized to trap Fe atoms and reduce their mean free path during the diffusion. Monte-Carlo simulations of the diffusion process which consider the random walk of Fe, Fick's diffusion of O atoms, Fe precipitation, and desorption of the SiO2 layer under the electron beam annealing were performed. Simulation results for the three preparation conditions are found in good agreement with the experimental data.

Mechanism of oxide thickness and temperature dependent current conduction in n+-polySi/SiO2/p-Si structures — a new analysis

The conduction mechanism of gate leakage current through thermally grown silicon dioxide (SiO2) films on (100) p-type silicon has been investigated in detail under negative bias on the degenerately doped n-type polysilicon (n+-polySi) gate. The analysis utilizes the measured gate current density JG at high oxide fields Eox in 5.4 to 12 nm thick SiO2 films between 25 and 300 °C. The leakage current measured up to 300 °C was due to Fowler–Nordheim (FN) tunneling of electrons from the accumulated n +-polySi gate in conjunction with Poole Frenkel (PF) emission of trapped-electrons from the electron traps located at energy levels ranging from 0.6 to 1.12 eV (depending on the oxide thickness) below the SiO2 conduction band (CB). It was observed that PF emission current IPF dominates FN electron tunneling current IFN at oxide electric fields Eox between 6 and 10 MV/cm and throughout the temperature range studied here. Understanding of the mechanism of leakage current conduction through SiO2 films plays a crucial role in simulation of time-dependent dielectric breakdown (TDDB) of metaloxide–semiconductor (MOS) devices and to precisely predict the normal operating field or applied gate voltage for lifetime projection of the MOS integrated circuits.

Fabrication and Modeling of High-Efficiency Front Junction N-Type Silicon Solar Cells With Tunnel Oxide Passivating Back Contact

This paper reports on in-depth understanding, modeling, and fabrication of 23.8% efficient 4 cm2 n-type Float Zone (FZ) silicon cells with a selective boron emitter and photolithography contact on front and tunnel oxide passivating contact on the back. Tunnel oxide passivating contact composed of a very thin chemically grown silicon oxide (∼15 A) capped with plasma-enhanced chemical vapor deposition (PECVD) grown 20 nm n+ poly Si gave excellent surface passivation and carrier selectivity with very low saturation current density (∼5 fA/cm2). A high-quality boron selective emitter was formed using ion implantation and solid source diffusion to minimize metal recombination and emitter saturation current density. Process optimization resulted in a cell $V_{{\rm{oc}}}$ of 712 mV, $J_{{\rm{sc}}}$ of 41.2 mA/cm2, and FF of 0.811. A simple methodology is used to model these cells which replaces tunnel oxide passivating contact region by electron and hole recombination velocities extracted from measured saturation current density of tunnel oxide passivating contact region and analysis. Using this approach and two-dimensional device modeling gave an excellent match between the measured and simulated cell parameters and efficiency, supporting excellent passivation and carrier selectivity of these contacts. Extended simulations showed that 26% cell efficiency can be achieved with this cell structure by further optimization of wafer quality, emitter profile, and contact design.

Anomalous Seebeck coefficient observed in silicon nanowire micro thermoelectric generator

We have found experimentally an anomalous thermoelectric characteristic of an n-type Si nanowire micro thermoelectric generator (μTEG). The μTEG is fabricated on a silicon-on-insulator wafer by electron beam lithography and dry etching, and its surface is covered with a thermally grown silicon dioxide film. The observed thermoelectric current is opposite to what is expected from the Seebeck coefficient of n-type Si. The result is understandable by considering a potential barrier in the nanowire. Upon the application of the temperature gradient across the nanowire, the potential barrier impedes the diffusion of thermally activated majority carriers into the nanowire, and it rather stimulates the injection of thermally generated minority carriers. The most plausible origin of the potential barrier is negative charges trapped at the interface between the Si nanowire and the oxide film. We practically confirmed that the normal Seebeck coefficient of the n-type Si nanowire is recovered after the hydrogen forming gas annealing. This implies that the interface traps are diminished by the hydrogen termination of bonding defects. The present results show the importance of the surface inactivation treatment of μTEGs to suppress the potential barrier and unfavorable contribution of minority carriers.

Low Density of Near-Interface Traps at the Al&lt;sub&gt;2&lt;/sub&gt;O&lt;sub&gt;3&lt;/sub&gt;/4H-SiC Interface with Al&lt;sub&gt;2&lt;/sub&gt;O&lt;sub&gt;3&lt;/sub&gt; Made by Low Temperature Oxidation of Al

We report on a very low density (&lt;5×1011 cm-2) of near-interface traps (NITs) at the Al2O3/4H-SiC interface estimated from capacitance-voltage (CV) analysis of MOS capacitors at different temperatures. The aluminum oxide (Al2O3) is grown by repeated deposition and subsequent low temperature (200°C) oxidation for 5 min of thin (1-2 nm) Al layers using a hot plate. We refer to this simple method as hot plate Al2O3. It is observed that the density of NITs is significantly lower in the hot plate Al2O3 samples than in samples with Al2O3 grown by atomic layer deposition (ALD) at 300°C and in reference samples with thermally grown silicon dioxide grown in O2 or N2O ambient.

Atomic layer deposition of tantalum oxide thin films using the precursor tert-butylimido-tris-ethylmethylamido-tantalum and water: Process characteristics and film properties

In this work, the precursor tert-butylimido-tris-ethylmethylamido-tantalum (TBTEMT) was applied for the atomic layer deposition (ALD) of tantalum oxide (Ta2O5) thin films for the first time. Water was used as the second reactant. A self-limiting, and hence, ALD-like film growth was confirmed in the temperature range from 100 to 300°C. The temperature window of this process extends from 250 to 300°C and features a growth rate of about 0.56Å/cycle. For lower temperatures, the growth rate increases gradually up to 0.92Å/cycle at 100°C. At a deposition temperature of 200°C, the process showed perfect layer-by-layer growth with 0.64Å/cycle and without any noticeable incubation period on both silicon with native oxide and hydrogen-terminated silicon. In addition, the conformal coating of structures with an aspect ratio of 40:1 is demonstrated as well.According to XPS analyses, the films are oxygen rich (Ta:O ratio around 0.34±0.01 for films grown at 150–300°C) and contain a significant amount of carbon (6±2at.%) and some nitrogen (<3at.%). The film densities, refractive indices and dielectric constants increase with increasing deposition temperature and are as high as 8.0±0.1g/cm3, 2.25 and 31, respectively. Films grown at 200°C are amorphous and smooth. They exhibit a film density of 7.8±0.1g/cm3, a refractive index of 2.17 (at 550nm) and a dielectric constant of 26±1. However, the films suffer from high leakage currents (>10−4A/cm2). In addition, electrical measurements revealed the formation of an interfacial layer between the Ta2O5 films and bare silicon. By using substrates with a thin thermally grown silicon oxide, the leakage could be reduced by three orders of magnitude.Post-deposition annealing at 800°C in nitrogen resulted in the crystallization of the Ta2O5 films, which is also accompanied by an increase in film density and refractive index. Moreover, the crystallized films exhibit an enhanced dielectric constant of 48±2. Electrical measurements revealed the growth of an interfacial layer with an equivalent oxide thickness of around 2.4nm due to the 800°C annealing. While this interfacial layer degrades the effective permittivity of the dielectric (e.g. 20.5±0.5 for a 20nm Ta2O5 film), it also causes a reduction of the leakage currents by more than three orders of magnitude (e.g. to 1·10−7A/cm2 for a 20nm Ta2O5 film).

Leakage current conduction, hole injection, and time-dependent dielectric breakdown of n-4H-SiC MOS capacitors during positive bias temperature stress

The conduction mechanism(s) of gate leakage current JG through thermally grown silicon dioxide (SiO2) films on the silicon (Si) face of n-type 4H-silicon carbide (4H-SiC) has been studied in detail under positive gate bias. It was observed that at an oxide field above 5 MV/cm, the leakage current measured up to 303 °C can be explained by Fowler-Nordheim (FN) tunneling of electrons from the accumulated n-4H-SiC and Poole-Frenkel (PF) emission of trapped electrons from the localized neutral traps located at ≈2.5 eV below the SiO2 conduction band. However, the PF emission current IPF dominates the FN electron tunneling current IFN at oxide electric fields Eox between 5 and 10 MV/cm and in the temperature ranging from 31 to 303 °C. In addition, we have presented a comprehensive analysis of injection of holes and their subsequent trapping into as-grown oxide traps eventually leading to time-dependent dielectric breakdown during electron injection under positive bias temperature stress (PBTS) in n-4H-SiC metal-oxide-silicon carbide structures. Holes were generated in the heavily doped n-type polycrystalline silicon (n+-polySi) gate (anode) as well as in the oxide bulk via band-to-band ionization by the hot-electrons depending on their energy and SiO2 film thickness at Eox between 6 and 10 MV/cm (prior to the intrinsic oxide breakdown field). Transport of hot electrons emitted via both FN and PF mechanisms was taken into account. On the premise of the hole-induced oxide breakdown model, the time- and charge-to-breakdown (tBD and QBD) of 8.5 to 47 nm-thick SiO2 films on n-4H-SiC were estimated at a wide range of temperatures. tBD follows the Arrhenius law with activation energies varying inversely with initial applied constant field Eox supporting the reciprocal field (1/E) model of breakdown irrespective of SiO2 film thicknesses. We obtained an excellent margin (6.66 to 6.33 MV/cm at 31 °C and 5.11 to 4.55 MV/cm at 303 °C) of normal operating field for a 10-year projected lifetime of 8.5 to 47 nm-thick SiO2 films on n-4H-SiC under positive bias on the n+-polySi gate. Furthermore, the projected maximum operating oxide field was little higher in metal gate devices compared to n+-polySi gate devices having an identically thick thermal SiO2 films under PBTS.

Review—Investigation and Review of the Thermal, Mechanical, Electrical, Optical, and Structural Properties of Atomic Layer Deposited High-k Dielectrics: Beryllium Oxide, Aluminum Oxide, Hafnium Oxide, and Aluminum Nitride

Atomic layer deposited (ALD) high-dielectric-constant (high-k) materials have found extensive applications in a variety of electronic, optical, optoelectronic, and photovoltaic devices. While electrical, optical, and interfacial properties have been the primary consideration for such devices, thermal and mechanical properties are becoming an additional key consideration for many new and emerging applications of ALD high-k materials in electromechanical, energy storage, and organic light emitting diode devices. Unfortunately, a clear correspondence between thermal/mechanical and electrical/optical properties in ALD high-k materials has yet to be established, and a detailed comparison to conventional silicon-based dielectrics to facilitate optimal material selection is also lacking. In this regard, we have conducted a comprehensive investigation and review of the thermal, mechanical, electrical, optical, and structural properties for a series of prevalent and emerging ALD high-k materials including aluminum oxide (Al2O3), aluminum nitride (AlN), hafnium oxide (HfO2), and beryllium oxide (BeO). For comparison, more established silicon-based dielectrics were also examined, including thermally grown silicon dioxide (SiO2) and plasma-enhanced chemically vapor deposited hydrogenated silicon nitride (SiN:H). We find that in addition to exhibiting high values of dielectric permittivity and electrical resistance that exceed those of SiO2 and SiN:H, the ALD high-k materials exhibit equally exceptional thermal and mechanical properties with coefficients of thermal expansion ≤ 6 × 10−6 /°C, thermal conductivites (κ) of 3–15 W/m K, and Young's modulus and hardness values exceeding 200 and 25 GPa, respectively. In many cases, the observed extreme thermal/mechanical properties correlate with the presence of crystallinity in the ALD high-k films. In contrast, some of the electrical and optical properties correlate more strongly with the percentage of ionic vs. covalent bonds present in the high-k film. Overall, the ALD high-k dielectrics investigated concurrently exhibit compelling thermal/mechanical and electrical/optical properties.

Ultrathin, transferred layers of thermally grown silicon dioxide as biofluid barriers for biointegrated flexible electronic systems

Materials that can serve as long-lived barriers to biofluids are essential to the development of any type of chronic electronic implant. Devices such as cardiac pacemakers and cochlear implants use bulk metal or ceramic packages as hermetic enclosures for the electronics. Emerging classes of flexible, biointegrated electronic systems demand similar levels of isolation from biofluids but with thin, compliant films that can simultaneously serve as biointerfaces for sensing and/or actuation while in contact with the soft, curved, and moving surfaces of target organs. This paper introduces a solution to this materials challenge that combines (i) ultrathin, pristine layers of silicon dioxide (SiO2) thermally grown on device-grade silicon wafers, and (ii) processing schemes that allow integration of these materials onto flexible electronic platforms. Accelerated lifetime tests suggest robust barrier characteristics on timescales that approach 70 y, in layers that are sufficiently thin (less than 1 μm) to avoid significant compromises in mechanical flexibility or in electrical interface fidelity. Detailed studies of temperature- and thickness-dependent electrical and physical properties reveal the key characteristics. Molecular simulations highlight essential aspects of the chemistry that governs interactions between the SiO2 and surrounding water. Examples of use with passive and active components in high-performance flexible electronic devices suggest broad utility in advanced chronic implants.

Growth and Etch Forms of Germanium Microcrystals on a Silicon Oxide Substrate

We have studied how the forms of germanium microcrystals evolve during thermal growth and etch processes in a reactive gas ambient. Microcrystals of germanium formed by chemical vapor deposition on thermally grown silicon oxide were examined before and after further processing to determine how particular crystal faces developed or receded and how other surface features evolved. The observed behavior is interpreted in terms of orientation-dependent kinetics and surface free energy.

Interface engineering of titanium oxide protected a-Si:H/a-Si:H photoelectrodes for light induced water splitting

TiO2 is a common protection layer on semiconductor electrodes for photoelectrochemical water splitting. We investigate the interface formation of TiO2 on amorphous silicon tandem solar cells by X-ray photoelectron spectroscopy. In order to optimize the contact properties, we prepare TiOx interface layers with various oxygen content by reactive magnetron sputter deposition. We observe, that a TiOx interface layer can reduce the silicon oxide growth during the film deposition on the amorphous silicon, but it forms a non-ohmic contact. The electrochemical investigation shows, that the benefit due to the reduction of the silicon oxide is counteracted by the unfavorable contact formation of TiOx interface layers prepared with low oxygen content.

Improved method for Mica functionalization used in single molecule imaging of DNA with atomic force microscopy

The modified procedure of 1-(3-aminopropyl)silatrane (APS) compound synthesis based on a new derivative (3‑aminopropyl)trimethoxysilane for the purpose of DNA immobilization for AFM single imaging is described. New reaction pathway based on kinetically driven reaction approach is described. Necessity of two‑step purification process is proved; ability of purified APS to provide four times smoother surfaces in comparison with a crude product is demonstrated. Various analytical methods such mass spectroscopy and 1 H NMR were used to show structure and enhanced purity of the APS product. APS mediates fixation of DNA molecules to mica substrates to be used for DNA imaging under Atomic Force Microscope. The use of an APS compound for simple and rapid silanization of mica surface is demonstrated. The advantages of APS‑based method are based mainly on low roughness of modified mica and homogeneous surface coverage by short sequence dsDNA (246 bp). The product obtained by the condensation reaction was purified in a two step process whose effectiveness was demonstrated not only by reduction of the silanized surface roughness, but also by mass spectroscopy (MS‑ESi), MALDI‑TOF method and proton magnetic resonance spectroscopy. Experiments demonstrate that 1‑(3‑aminopropyl)silatrane can be used to fix dsDNA molecules to a mica surface to be visualized by either the tapping mode or the force‑volume mode of AFM microscopy, as demonstrated by experiments. Moreover, necessity of advanced purification protocol is demonstrated by AFM based roughness measurements – pure vs crude APS product. The kinetics of APS‑layer aging, caused by silicon oxide growth on silanized layers, was studied by water contact angle measurements and is discussed.

Tilted ion implantation as a cost-efficient sublithographic patterning technique

Tilted ion implantation (TII) is experimentally demonstrated to be a promising approach to pattern features smaller than pre-existing mask features on the surface of a wafer substrate. A key to this approach is a substantial change in the etch rate of a thin masking layer by TII. Fifteen degrees-tilted Ar+ implantation into a 10 nm-thick thermally grown silicon dioxide (SiO2) masking layer at a dose of 3 × 1014 cm−2 enhances its etch rate in dilute hydrofluoric acid solution by a factor of approximately 9. The features defined by TII are shown to be self-aligned to the pre-existing mask features and to have critical dimensions that can be adjusted by changing the implant tilt angle (θ) and/or geometrical dimensions of the pre-existing mask features. In this work, trenches of width as small as ∼9 nm and sub-20 nm holes are achieved by TII-enhanced patterning.

Catalytically enhanced thermal decomposition of chemically grown silicon oxide layers on Si(001)

The thermal decomposition of Si dioxide layers formed by wet chemical treatment on Si(001) has been studied by low-energy electron microscopy. Independent nucleations of voids occur into the Si oxide layers that open by reaction at the void periphery. Depending on the voids, the reaction rates exhibit large differences via the occurrence of a nonlinear growth of the void radius. This non-steady state regime is attributed to the accumulation of defects and silicon hydroxyl species at the SiO2/Si interface that enhances the silicon oxide decomposition at the void periphery.

Microstructuring of silicon single crystals by fiber laser in high-speed scanning mode

Subject of Study. The surface structure of the silicon wafers (substrate) with a thermally grown silicon dioxide on the surface (of SiO2/Si) is studied after irradiation by pulse fiber laser of ILI-1-20 type. The main requirements for exposure modes of the system are: the preservation of the integrity of the film of silicon dioxide in the process of microstructuring and the absence of interference of surrounding irradiated areas of the substrate. Method. Studies were carried out on silicon wafers KEF-4,5 oriented in the crystallographic plane (111) with the source (natural) silicon dioxide (SiO2) with thickness of about 4 nm, and SiO2 with 40 nm and 150 nm thickness, grown by thermal oxidation in moist oxygen. Also, wafers KHB-10 oriented in the plane (100) with 500 nm thickness of thermal oxide were investigated. Irradiation of SiO2/Si system was produced by laser complex based on ytterbium fiber pulse laser ILI-1-20. Nominal output power of the laser was 20 W, and the laser wavelength was λ = 1062 nm. Irradiation was carried out by a focused beam spot with a diameter of 25 microns and a pulse repetition rate of 99 kHz. The samples with 150 nm and 40 nm thickness of SiO2 were irradiated at a power density equal to 1,2·102 W/cm2, and the samples of SiO2 with 500 nm thickness were irradiated at a power density equal to 2,0·102 W/cm2. Scanning was performed using a two-axis Coordinate Scanning Device based on VM2500+ drives with control via a PC with the software package "SinMarkTM." Only one scan line was used at the maximum speed of the beam equal to 8750 mm/s. Morphology control of the irradiated samples was conducted by an optical microscope ZeissA1M with high-resolution CCD array. A scanning probe microscope Nanoedicator of the NT-MDT company was used for structural measurements. Main Results. It has been shown that at a single exposure of high-frequency pulsed laser radiation on SiO2/Si system, with maintaining the integrity of the SiO2 film, similar symmetric microstructures are formed on the silicon surface. We suggest that the reason for their appearance is the reconstruction of the surface of the silicon arising in the process of recrystallization of the silicon melt surface in the irradiated region of the substrate. The morphology of these microstructures is due to several factors: crystallographic orientation of the plate, original (before the thermal oxidation) reconstruction of the plate surface, elastic stresses of SiO2/Si, laser treatment (thermal, corpuscular, wave). Exposure modes for the observed structures have been determined. Practical Relevance. For the first time in the microstructuring of SiO2/Si by fiber laser in the high-speed scanning mode, images of pieces have been obtained, which can indirectly imply that the reconstruction of atoms on the silicon substrate surface occurs before the thermal oxidation. Clearly marked localization of laser energy at selected irradiation modes enables to assert the possibility of detection and control of structural defects for the elements of semiconductor electronic devices.