The surface terminal structure of diamond film determines its surface physical properties. In this paper, the surface of silicon-based polycrystalline diamond film was nitrided by radio frequency (RF) plasma, and the evolution of the diamond surface termination structure under different nitridation temperatures and times was investigated. In-situ X-ray photoelectron spectroscopy (XPS) analysis showed that nitridation at 600 °C is beneficial for the more effective formation of nitrogen terminal diamond (N-diamond) structure dominated by CN bonds on the diamond surface. In-situ ultraviolet photoelectron spectroscopy (UPS) indicated that the electron affinity of diamond surface can gradually change from negative to positive with prolonged nitridation time. The increased positive electron affinity (PEA) of surface terminations made it more difficult for electrons to escape from the diamond surface, resulting in a significant decrease in the intensity of the secondary electron peak. Furthermore, AFM and Raman measurements indicated that nitridation treatment does not significantly improve the surface roughness of diamond or form graphite phase, which realized the preparation of non-damaged N-diamond.
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