Graphene Pn Junction Research Articles

Electronic Transport Properties of Graphene pn Junctions and Its Electron Optics

The electronic transport properties of graphene pn junctions are examined using the non-equilibrium green's function (NEGF) simulation approach. We then review the basic physics involved in the conductance modulation of a graphene pn junction. The understanding derived from these studies sets the stage for exploring the potential applications of Klein tunneling, negative refractive index, and total internal reflection for realization of novel electron optics devices and spatial manipulation of current flow.

Electronic Transport Properties of Graphene pn Junctions and Its Electron Optics Devices

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Klein tunneling in graphene under substrate electric field

The pn junction in mono-layer graphene with both intrinsic and Rashba spin-orbit interactions is studied theoretically. We show that a crossover from perfect reflection to perfect transmission occurs at normal incidence by tuning perpendicular electric field. Angular dependent reflection probability enabled us to distinguish the perfect reflection from trivial band gap effects.