Graphene Nanodevices Research Articles

Smart-Polymer-Functionalized Graphene Nanodevices for Thermo-Switch-Controlled Biodetection.

In this work, we have developed a general methodology for constructing an activatable biosensor utilizing a thermoresponsive polymer and two-dimensional nanosheet. We have demonstrated the detection of four different types of biological compounds using the smart PEGMA (poly(ethylene glycol) methyl ether methacrylate), oligonucleotides, and graphene oxide nanoassembly. The activity of the functional nanodevice is controlled with a thermo-switch at 39 °C. In this design, the nanosized graphene oxide serves as a template for fluorophore labeled probe oligonucleotides while quenching the fluorescence intensities dramatically. On the other hand, the PEGMA polymer serves as an activatable protecting layer covering the graphene oxide and entrapping the probe oligonucleotides on the surface. The PEGMA polymers are hydrophobic above their lower critical solution temperature (LCST) and therefore interact strongly with the hydrophobic surface of graphene oxide, creating a closed configuration (OFF state) of the nanodevice. However, once the temperature decreases below the LCST, the polymer undergoes conformational change and becomes hydrophilic. This opens up the surface of the graphene oxide (open configuration, ON state), freeing the encapsulated payload on the surface. We have tuned the activity of the nanodevice for the detection of a sequence-specific DNA, miR-10b, thrombin, and adenosine. The activity of our functional system can be decreased by ∼80% with a thermo-switch at 39 °C. Our approach can be extended to other antisense oligonucleotide, aptamer, or DNAzyme based sensing strategies.

Raman Spectrum of Epitaxial Graphene Grown on Ion Beam Illuminated 6H-SiC (0001)

Patterning SiC substrates with focused ion beam for growth of confined graphene nanostructures is interesting for fabrication of graphene devices. However, by imposing an ion beam, the morphology of illuminated SiC substrate surface is inevitably damaged, which imposes significant effects on the subsequent growth of graphene. By using confocal Raman spectroscopy, we investigate the effects of ion beam illumination on the quality of graphene layers that are grown on 6H-SiC (0001) substrates with two different growth methods. With the first method, the 6H-SiC (0001) substrate is flash annealed in ultra-high vacuum. Prominent defects in graphene grown on illuminated areas are revealed by the emergence of Raman D peak. Significant changes in D peak intensity are observed with Ga+ ion fluence as low as 105 μm−2. To eliminate the damage from the ion beam illumination, hydrogen etching is employed in the second growth method, with which prominent improvement in the quality of crystalline graphene is revealed by its Raman features. The defect density is significantly reduced as inferred from the disappearance of D peak. The Raman shift of G peak and 2D peak indicates strain-released graphene layers as grown in such a method. Such results provide essential information for patterning graphene nano-devices.

Characterization of SiO2/SiNx gate insulators for graphene based nanoelectromechanical systems

The structural and magnetotransport characterization of graphene nanodevices exfoliated onto Si/SiO2/SiNx heterostructures are presented. Improved visibility of the deposited flakes is achieved by optimal tuning of the dielectric film thicknesses. The conductance of single layer graphene Hall-bar nanostructures utilizing SiO2/SiNx gate dielectrics were characterized in the quantum Hall regime. Our results highlight that, while exhibiting better mechanical and chemical stability, the effect of non-stoichiometric SiNx on the charge carrier mobility of graphene is comparable to that of SiO2, demonstrating the merits of SiNx as an ideal material platform for graphene based nanoelectromechanical applications.

Characterizing wave functions in graphene nanodevices: Electronic transport through ultrashort graphene constrictions on a boron nitride substrate

We present electronic transport measurements through short and narrow (30x30 nm) single layer graphene constrictions on a hexagonal boron nitride substrate. While the general observation of Coulomb-blockade is compatible with earlier work, the details are not: we show that the area on which charge is localized can be significantly larger than the area of the constriction, suggesting that the localized states responsible for Coulomb-blockade leak out into the graphene bulk. The high bulk mobility of graphene on hexagonal boron nitride, however, seems not consistent with the short bulk localization length required to see Coulomb-blockade. To explain these findings, charge must instead be primarily localized along the imperfect edges of the devices and extend along the edge outside of the constriction. In order to better understand the mechanisms, we compare the experimental findings with tight-binding simulations of such constrictions with disordered edges. Finally we discuss previous experiments in the light of these new findings.

Effects of Localized Disorder on the Quantum Transport Property of a Four-Terminal Graphene Nanodevice

Effects of Localized Disorder on the Quantum Transport Property of a Four-Terminal Graphene Nanodevice

Visualisation of edge effects in side-gated graphene nanodevices.

Using local scanning electrical techniques we study edge effects in side-gated Hall bar nanodevices made of epitaxial graphene. We demonstrate that lithographically defined edges of the graphene channel exhibit hole conduction within the narrow band of ~60–125 nm width, whereas the bulk of the material is electron doped. The effect is the most pronounced when the influence of atmospheric contamination is minimal. We also show that the electronic properties at the edges can be precisely tuned from hole to electron conduction by using moderate strength electrical fields created by side-gates. However, the central part of the channel remains relatively unaffected by the side-gates and retains the bulk properties of graphene.

Electronic Transport in Multi-Terminal Graphene Devices with Various Arrangements of Electrodes

This study is devoted to the problem of electronic transport in graphene nanodevices in 4-terminal systems with various arrangements of electrodes. The electrodes are attached to square and rectangular graphene nano akes with armchair (a) and zigzag (z) edges. Apart from the known case of the zzzz -con guration, with all the electrodes coupled to the zigzag fragments of the edges, also the aaaaand zaza-type cases are considered here. The adopted theoretical approach is based on a tight-binding method combined with the wideband approximation for electrodes, and an e ective iterative knitting-type Green's function algorithm.

Edge Oxidation Effect of Chemical-Vapor-Deposition-Grown Graphene Nanoconstriction

The edge oxidation effects of chemical-vapor-deposition-grown graphene devices with nanoconstrictions of different sizes are presented. The effects of edge oxidation on the doping level of a nanoconstriction graphene device were identified by Raman spectroscopy and using the back-gate-voltage-dependent resistance. Strong p-type doping was observed as the size of nanoconstriction decreased. The Dirac point of the graphene device shifted toward positive voltage, and the positions of the G and 2D peaks in Raman spectroscopy shifted toward a higher wave number, indicating the p-type doping effect of the graphene device. p-type doping was lifted by deep-ultraviolet light illumination under a nitrogen atmosphere at room temperature. p-type doping was restored by deep-ultraviolet light illumination under an oxygen atmosphere at room temperature. Edge oxidation in the narrow structures explains the origin of the p-type doping effect widely observed in graphene nanodevices.

Sub-10 nm patterning by focused He-ion beam milling for fabrication of downscaled graphene nano devices

In this work, a novel hybrid fabrication method for graphene quantum dot devices with minimum feature sizes of ∼3nm and high yield is described. It is a combination of e-beam lithography and direct milling with the sub-nm focused helium ion beam generated by a helium ion microscope. The method is used to fabricate graphene quantum dot devices contacted with metal to allow electrical characterization. An annealing step is described that reduces hydrocarbon contamination on the sample surface and allows complete removal of graphene by the helium ion beam and therefore successful isolation of side gates. The electrical characterization of the final device demonstrates the successful fabrication of the first electrically characterized He-ion beam patterned graphene device. The highly controllable, fine scale fabrication capabilities offered by this approach could lead to a more detailed understanding of the electrical characteristics of graphene quantum devices and pave the way towards room-temperature operable graphene quantum dot devices.

Epitaxial growth of single-domain graphene on hexagonal boron nitride

Hexagonal boron nitride (h-BN) has recently emerged as an excellent substrate for graphene nanodevices, owing to its atomically flat surface and its potential to engineer graphene's electronic structure. Thus far, graphene/h-BN heterostructures have been obtained only through a transfer process, which introduces structural uncertainties due to the random stacking between graphene and h-BN substrate. Here we report the epitaxial growth of single-domain graphene on h-BN by a plasma-assisted deposition method. Large-area graphene single crystals were successfully grown for the first time on h-BN with a fixed stacking orientation. A two-dimensional (2D) superlattice of trigonal moiré pattern was observed on graphene by atomic force microscopy. Extra sets of Dirac points are produced as a result of the trigonal superlattice potential and the quantum Hall effect is observed with the 2D-superlattice-related feature developed in the fan diagram of longitudinal and Hall resistance, and the Dirac fermion physics near the original Dirac point is unperturbed. The macroscopic epitaxial graphene is in principle limited only by the size of the h-BN substrate and our synthesis method is potentially applicable on other flat surfaces. Our growth approach could thus open new ways of graphene band engineering through epitaxy on different substrates.

Size distribution-controlled preparation of graphene oxide nanosheets with different C/O ratios

A convenient and efficient preparation method for separation graphene oxide with well-defined size distribution is developed using a centrifugation technique. The graded profile of graphene oxide nanosheets with narrow size distribution is effectively controlled by varying the centrifugation speed. The results show that the oxygen content of graphene oxide is highly dependent on their size distribution. Graphene oxide nanosheet with large size shows a red-shift in UV–vis absorption spectra, compared to graphene oxide with small size. This phenomenon is interpretation by a density functional theory calculation. The present work will provide a simple method to prepare graphene oxide nanosheets with controllable size distribution and C/O ratio, which will be valuable for the functionalization of graphene-based hybrids and the fabrication of graphene nano-devices.

Abnormal electronic transport in disordered four-terminal graphene nanodevice

In this paper, a numerical study of quantum transport in a disordered four-terminal graphene nanodevice is investigated based on the Landauer approach. The effects of impurity on transmission coefficient of the electron injected into the system are studied using tight-binding model. In this manner, we emphasize that when the disorder density is sufficiently large, the transmission coefficients and the current reduce due to multiscattering phenomenon. We have found that the perfectly conducting channel develops in four-terminal device in its zigzag edge if the range of impurity gets exponentially wider. The theoretical results obtained can be a base for the development in designing graphene nanodevice.

Reactive-ion-etched graphene nanoribbons on a hexagonal boron nitride substrate

We report on the fabrication and electrical characterization of both single layer graphene micron-sized devices and nanoribbons on a hexagonal boron nitride substrate. We show that the micron-sized devices have significantly higher mobility and lower disorder density compared to devices fabricated on silicon dioxide substrate in agreement with previous findings. The transport characteristics of the reactive-ion-etched graphene nanoribbons on hexagonal boron nitride, however, appear to be very similar to those of ribbons on a silicon dioxide substrate. We perform a detailed study in order to highlight both similarities as well as differences. Our findings suggest that the edges have an important influence on transport in reactive-ion-etched graphene nanodevices.

Boron Nitride on Cu(111): An Electronically Corrugated Monolayer

Ultrathin films of boron nitride (BN) have recently attracted considerable interest given their successful incorporation in graphene nanodevices and their use as spacer layers to electronically decouple and order functional adsorbates. Here, we introduce a BN monolayer grown by chemical vapor deposition of borazine on a single crystal Cu support, representing a model system for an electronically patterned but topographically smooth substrate. Scanning tunneling microscopy and spectroscopy experiments evidence a weak bonding of the single BN sheet to Cu, preserving the insulating character of bulk hexagonal boron nitride, combined with a periodic lateral variation of the local work function and the surface potential. Complementary density functional theory calculations reveal a varying registry of the BN relative to the Cu lattice as origin of this electronic Moiré-like superstructure.

Robust mesoscopic fluctuations in disordered graphene

The temperature dependence of the mesoscopic conductance fluctuations is investigated for disordered graphene. The fluctuations are generated by varying either magnetic field or carrier density (via a back-gate). Very different temperature cut-offs are found for these two types of fluctuations, with the density-induced features persisting to much higher temperatures (beyond 100 K, even) than those observed when sweeping magnetic field. The robust character of the density-dependent fluctuations may cause them to play an important role in determining the operation of future graphene nanodevices, particularly as device sizes are reduced to the nanoscale.

Raman spectra of bilayer graphene covered with Poly(methyl methacrylate) thin film

The Raman spectra of bilayer graphene covered with poly(methyl methacrylate) (PMMA) were investigated. Both the G and 2D peaks of PMMA-coated graphene were stiff and broad compared with those of uncovered graphene. This could be attributed to the residual strain induced by high-temperature baking during fabrication of the nanodevice. Furthermore, the two 2D peaks stiffened and broadened with increasing laser power, which is just the reverse to uncovered graphene. The stiffness is likely caused by graphene compression induced by the circular bubble of the thin PMMA film generated by laser irradiation. Our findings may contribute to the application of PMMA in the strain engineering of graphene nanodevices.

Magneto-transport of graphene and quantum phase transitions in the quantum Hall regime

In this paper we show the electronic transport and the quantum phase transitions that characterize the quantum Hall regime in graphene placed on SiO2 substrates at magnetic fields up to 28 T and temperatures down to 4 K. The analysis of the temperature dependence of the Hall and longitudinal resistivity reveals intriguing non-universalities of the critical exponents of the plateau–insulator transition. These exponents depend on the type of disorder that governs the electrical transport and its characterization is important for the design and fabrication of novel graphene nano-devices.

Electronic transport in the multi-terminal graphene nanodevices

We examined the ac transport attribute of the multi-terminal structures in the absence and presence of magnetic field. We found that the ac response depends on the structural configurations and that the admittance varies with the features of the attached nanoribbons. In the vicinity of Dirac point the dc conductance manifests a dip or peak and the imaginary part (emittance) vanishes or not, depending on whether the attached ribbon is semiconductive or metallic. In the presence of magnetic field, the emittance becomes asymmetric reflecting the dynamic behaviors of electron and hole.

Mapping the Density of Scattering Centers Limiting the Electron Mean Free Path in Graphene

Recently, giant carrier mobility μ (>10(5) cm(2) V(-1) s(-1)) and micrometer electron mean free path (l) have been measured in suspended graphene or in graphene encapsulated between inert and ultraflat BN layers. Much lower μ values (10000-20000 cm(2) V(-1) s(-1)) are typically reported in graphene on common substrates (SiO(2), SiC) used for device fabrication. The debate on the factors limiting graphene electron mean free path is still open with charged impurities (CI) and resonant scatterers (RS) indicated as the most probable candidates. As a matter of fact, the inhomogeneous distribution of such scattering sources in graphene is responsible of nanoscale lateral inhomogeneities in the electronic properties, which could affect the behavior of graphene nanodevices. Hence, high resolution two-dimensional (2D) mapping of their density is very important. Here, we used scanning capacitance microscopy/spectroscopy to obtain 2D maps of l in graphene on substrates with different dielectric permittivities, that is, SiO(2) (κ(SiO2) = 3.9), 4H-SiC (0001) (κ(SiC) = 9.7) and the very-high-κ perovskite strontium titanate, SrTiO(3) (001), briefly STO (κ(STO) = 330). After measuring l versus the gate bias V(g) on an array of points on graphene, maps of the CI density (N(CI)) have been determined by the neutrality point shift from V(g) = 0 V in each curve, whereas maps of the RS density (N(RS)) have been extracted by fitting the dependence of l on the carrier density (n). Laterally inhomogeneous densities of CI and RS have been found. The RS distribution exhibits an average value ∼3 × 10(10) cm(-2) independently on the substrate. For the first time, a clear correlation between the minima in the l map and the maxima in the N(CI) map is obtained for graphene on SiO(2) and 4H-SiC, indicating that CI are the main source of the lateral inhomogeneity of l. On the contrary, the l and N(CI) maps are uncorrelated in graphene on STO, while a clear correlation is found between l and N(RS) maps. This demonstrates a very efficient dielectric screening of CI in graphene on STO and the role of RS as limiting factor for electron mean free path.

Bilayer graphene dual-gate nanodevice: Anab initiosimulation

We study the electronic transport properties of a dual-gated bilayer graphene nanodevice via first principles calculations. We investigate the electric current as a function of gate length and temperature. Under the action of an external electrical field we show that even for gate lengths up 100 Ang., a non zero current is exhibited. The results can be explained by the presence of a tunneling regime due the remanescent states in the gap. We also discuss the conditions to reach the charge neutrality point in a system free of defects and extrinsic carrier doping.