The high-temperature applications of Silicon Carbide (SiC) power devices are constrained by traditional epoxy molding compound (EMC). A significant challenge arises from the mismatch between the thermal expansion coefficients (CTE) of the encapsulant and the SiC chip, generating thermal and mechanical stresses during prolonged high-temperature operation. While glass encapsulants offer stability above 300 °C, these stresses can lead to mechanical degradation and eventual failure of SiC power devices. We design a glass-based encapsulation material to adjust the CTE of the glass to match that of the SiC chip (3–9 ppm/℃), enabling encapsulation of the device for long-term operation at 300 °C. Finite element analysis (FEA) confirms that the CTE adjustment effectively reducs internal thermal stresses. The glass composite with 10 wt% PbTiO3demonstrates a Tg of 310 °C and a CTE of 8.48 ppm/℃, successfully encapsulating a SiC schottky barrier diode in TO-247 package form. The encapsulated device exhibits low leakage current, a reverse breakdown voltage of 1,700 V, and a thermal resistance of 0.45 °C/W. Notably, the device maintains excellent performance even after 1,176 h of high-temperature aging, including 336 h at 300 °C and exhibits minimal change during thermal cycling between −50 and 150 °C for 100 cycles. Long-term performance analysis demonstrates superior stability compared to EMC encapsulation. These results highlight the potential of glass-based encapsulants for wide band gap power devices, offering reliability and performance under extreme conditions.
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