GHz Sub-harmonic Mixer Research Articles

248 GHz Sub-Harmonic Mixer Last Transmitter With I/Q Imbalance and LO Feedthrough Calibration

248 GHz Sub-Harmonic Mixer Last Transmitter With I/Q Imbalance and LO Feedthrough Calibration

220 GHz Multi Circuit Integrated Front End Based on Solid‐State Circuits for High Speed Communication System

This paper presents the research on a 220 GHz multi circuit inte-grated front end based on solid-state circuits. This integrated front end integrates a 220 GHz subharmonic mixer, a 110 GHz tripler, a 110 GHz 8 dB hybrid coupler and a 220 GHz waveguide bandpass filter (BPF) in one single block. Compared to the traditional transceivers which usually use cascade connection of the independent mixers and multipliers, the size of the proposed multi circuit integrated front-end block is 25 mm × 20 mm × 20 mm, ten times smaller than the cascading transceiver. In order to check the tripler’s output power, a modified compact 110 GHz 8 dB hybrid coupler is set between mixer and tripler. Due to the characteristics of the hybrid coupler, the deterioration of cascading transceiver’s performance caused by mismatch has also been improved. In addition, to achieve single sideband (SSB) communication, a 220 GHz BPF with high selectivity is integrated in the circuit. The measured conversion loss of the fabricated multi circuit integrated front end is less than 11 dB, where the LO and RF frequency are 37 and 210−220 GHz. Based on this front-end, a 220 GHz high speed communication system has been setup and it can achieve 10 Gbps data transmission using 16QAM modulation.

A 27–44 GHz CMOS Dual-Ring Subharmonic Up-Conversion Mixer With Linearization Technique

A 27–44 GHz subharmonic up-conversion mixer using 65 nm CMOS technology is presented. For subharmonic scheme and wide RF/IF bandwidth, a dual-ring topology is developed in this mixer design. To increase the linearity and conversion gain (CG) without adding additional local oscillator (LO) power, a LO boosting linearization technique is adopted. The subharmonic up-conversion mixer achieves a measured CG of −12 dB ± 1.5 dB from a wide RF frequency of 27 to 44 GHz. The 3-dB IF bandwidth is from dc to 10 GHz. After adopting the linearization technique, the output 1-dB compression point (OP <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">1 dB</sub> ) of the subharmonic up-conversion mixer can be improved from −12 to −9 dBm at 38 GHz with zero addition dc consumption.

A design of 210 to 235GHzfixed tuned mixer using planar Schottky diode

This paper presents the design of a fixed tuned 210 to 235 GHz subharmonic mixer (SHM). The mixer is designed using GaAs based planar antiparallel Schottky diode pair AP1/G2/0P95 from Rutherford Appleton Laboratory. 3D model of the Schottky diode is discussed and simulated to consider parasitic effects of the diode. Detailed design technique of each of its subsections as well as the integrated mixer circuit is presented. Nonlinear co-simulation of the designed mixer exhibits double sideband (DSB) conversion loss less than 9.2 dB over the frequency band 210 to 235 GHz with 4 dBm of local oscillator (LO) power while the area of the rectangular printed section is 4.224 × 0.35 mm.

220 GHz wideband integrated receiver front end based on planar Schottky diodes

AbstractIn this article, a 220 GHz wideband receiver front end is proposed, featuring a 220 GHz subharmonic mixer and a 110 GHz wideband tripler integrated in one single block. The 220 GHz subharmonic mixer and 110 GHz tripler are firstly developed separately with proper planar Schottky diodes. According to the simulated and experimental results, the direct combination of independent mixer and tripler will lead to deterioration of the front end's performances, especially for wideband receivers. This indicates the necessity of building matching network between the cascade circuits in wideband submillimeter receivers. To improve the integral performances of the receiver front end and reduce its size, the combination of the subharmonic mixer and the tripler was optimized with load‐pull techniques and realized in one block. Measured results reveal that the single sideband (SSB) conversion loss of the integrated receiver front end is 7.5‐11 dB from 185 to 250 GHz, while the double sideband (DSB) noise temperature is 750‐1600 K within this frequency range. The integrated front end features half size of the combination of independent modules and better performances. Good agreement between the simulated and measured results shows that the integration and optimization techniques can be applied to realize compact terahertz systems in the future.

Development of a Wideband 220-GHz Subharmonic Mixer Based on GaAs Monolithic Integration Technology

A wideband 220 GHz subharmonic mixer based on monolithic integration technology is proposed in this paper. It features 12 Mm-thick GaAs membrane with anti-parallel Schottky diodes working at THz band monolithically integrated on the membrane. The optimization principles of low-parastics Schottky diodes and the fabrication process of GaAs MMIC membrane diodes are elaborated. To realize optimum performances of the mixer, the dimensions of the integrated diodes and the matching network are optimized with harmonic balance simulation and load-pull techniques. An IF low pass filter with compact microstrip resonance cell (CMRC) configuration and an improved perpendicular coax-to-microstrip connection are used to realize wide IF band. The measured results show that the single sideband (SSB) conversion loss of this mixer is less than 10.5 dB from 185 to 255 GHz with fixed IF of 1 GHz, while the double sideband (DSB) noise temperature is better than 1400 K in this frequency range. Using fixed local oscillator (LO) frequency of 110 GHz, the measured SSB conversion loss is 7.4-10.7 dB within 185-255 GHz, indicating the good performances of the mixer with IF from DC to 35 GHz. The GaAs monolithic integration technology provides an approach for massive manufacturing of identical circuits and the proposed mixer with wideband characteristics will be applied in 220 GHz imaging systems in the near future.

A 200–240 GHz Sub-Harmonic Mixer Based on Half-Subdivision and Half-Global Design Method

For the terahertz harmonic mixer, a design model based on Half-Subdivision and Half-Global Design Method (HS-HGDM) with a single functional unit is proposed. The single functional unit circuit of the mixer, such as LO or IF Low Pass Filter (LPF), is designed by Subdivision Design Method (SDM), and the rest circuits of the mixer are designed by Global Design Method (GDM). The harmonic mixer based on this model is characterized by simple circuit structure, low conversion loss, small circuit size and high stability. In this paper, an improved Compact Suspended Micro-strip Resonators (CSMRs) filter is developed for the IF part of sub-harmonic mixer. The remaining circuits consist of some basic transmission units, such as the High-Z Low-Z impedance Transmission Lines (H-Z L-Z TLs) applied for main circuit, and full/reduced height WR4.3/WR8 applied for providing RF/LO signal. In RF frequency range 200–240 GHz, a Single Sideband (SSB) conversion loss of 7.36±0.76 dB operating at IF frequency 1.8 GHz, and a Double Sideband (DSB) noise temperature below 1034 K with the LO power of 2–5 mW and the LO frequency of 107 GHz were achieved. This broadband sub-harmonic mixer operates at room temperature, which makes it applicable to sub-millimeter wave or terahertz wireless communication systems and imaging inspection systems.

A broadband 630–720 GHz Schottky based sub-harmonic mixer using intrinsic resonances of hammer-head filter

An room temperature low noise anti-parallel Schottky diode based 630–720GHz sub-harmonic mixer (SHM) is designed, built and measured. Intrinsic resonances in low-pass hammer-head filter have been adopted to prevent the LO and RF power leak from the IF channel, while greatly minimizing the transmission line size. The mixer consists of 15um quartz terahertz circuit and 127um Al2O3 IF transformer circuit. An improved lumped element equivalent noise model of SBDs guarantees the accuracy of simulation. The measurement indicates that with local oscillating (LO) signal of 2–8 mW, the lowest double sideband (DSB) conversion loss is 8.2 dB at 645 GHz, and the best DSB noise temperature is 2800 K at 657GHz. The 3 dB bandwidth of conversion loss is 75 GHz from 638 to 715 GHz. The work IF frequency band is above 20GHz ranging from 1 to 20 GHz with −10dB return loss.

GaAs肖特基二极管的250 GHz二次谐波混频器研究

GaAs肖特基二极管的250 GHz二次谐波混频器研究

420 GHz subharmonic mixer based on heterogeneous integrated Schottky diode

420 GHz subharmonic mixer based on heterogeneous integrated Schottky diode

Switchable Direct-Conversion Receiver for 2GHz and 5GHzwith Sub-harmonic Mixer

This paper reports on a fully-integrated CMOS switchable direct-conversion receiver for 2GHz, 5GHz.Switchable low noise amplifier is proposed for suiting for multiband (2GHz, 5GHz).Sub-harmonic mixing is used for down-conversion to minimize the DCoffset due to LO-leakage. The residual DC-offset is cancelled by a digital-to-analog converter at the output of mixer. For quadrature down-conversion with sub-harmonic mixing, octa-phase LO signals are generated by an integer-N type frequency synthesizer. Implemented in a 0.18m CMOS technology, the receiver dissipates 97mA from a 1.8V supply voltage and has 6.5dB noise figure (NF) and -4dBm input thirdorder intercept point (iIP3). The phase noise of the closed-loop VCO is -108dBc/Hz at 1MHz offset.

A 220 GHz subharmonic mixer based on schottky diodes with an accurate terahertz diode model

ABSTRACTThis article introduces the design process of a 220 GHz subharmonic mixer with low conversion loss, which is comprised of a pair of anti‐parallel Schottky diodes (SBD). For terahertz circuits, the wavelength of the electromagnetic (EM) wave is very close to the size of devices, which results in complicated parasitic effects. This will leads to a very limited optimization space for circuits design when matching the impedance. To solve this problem, we developed the precise 3D EM planar SBD model and the field‐circuit co‐simulation method to design this terahertz mixer. The diodes are mounted on the quartz‐based suspended microstrip line. The measured results show that the single side band conversion loss is less than 12 dB during radio frequency (RF) range from 211 to 226 GHz and the minimum loss is about 5.9 dB. With the intermediate frequency fixed at 1 GHz, the conversion loss varies from 8 dB to 11.2 dB over the RF bandwidth of 211 to 221 GHz. The mixer can be applied in heterodyne receivers of terahertz systems. © 2016 Wiley Periodicals, Inc. Microwave Opt Technol Lett 58:2311–2316, 2016

Design of a low noise 190–240 GHz subharmonic mixer based on 3D geometric modeling of Schottky diodes and CAD load-pull techniques

Design of a low noise 190–240 GHz subharmonic mixer based on 3D geometric modeling of Schottky diodes and CAD load-pull techniques

基于二极管精确电路模型的183 GHz分谐波混频器设计

基于二极管精确电路模型的183 GHz分谐波混频器设计

Design of the 450GHz sub-harmonic mixer based on Schottky diode

Design of the 450GHz sub-harmonic mixer based on Schottky diode

14–30 GHz low‐power sub‐harmonic single‐balanced gate‐pumped mixer with transformer combiner in 0.18 μm CMOS

A 14-30 GHz sub-harmonic single-balanced gate-pumped mixer with a wideband transformer combiner in 0.18 μm CMOS technology is presented. The transistors of the sub-harmonic mixer core are biased at weak inversion to lower the required local oscillator (LO) driving power and DC power consumption. The wideband combiner including a Marchand balun and a 1:1:1 trifilar transformer was designed to combine the radio frequency (RF) and LO driving signals to produce four states of signals, where the RF frequency is about twice the LO frequency. Two quarter-wavelength transmission lines are adopted to improve the RF-to-intermediate-frequency (IF) and 2LO-to-IF isolations. The measured results show that the maximum conversion gain of -1 dB is at 18 GHz and a 3 dB bandwidth is from 14 to 30 GHz while applying the LO driving power of only 1 dBm. The total power consumption including the output buffer is only 7.8 mW.

Experimental analysis of different measurement techniques for characterization of millimeter‐wave mixers

ABSTRACTThis article compares for the first time three well‐known procedures for characterizing the noise temperature and conversion loss of a millimeter wave mixer. To carry out this study, a 183 GHz subharmonic mixer has been measured using three common procedures, that is, the “attenuator,” the “gain,” and the “noise injection” procedures. Furthermore, for every measurement procedure, three different detection methods have been used; a broadband power meter, a yttrium iron garnet filter working together with a broadband power meter, and a spectrum analyzer. The “gain procedure” has turned out to be the most stable one in terms of less variation between consecutive values and flatter results along all the frequency range. Results obtained with every detection method are consistent with each other, showing a similar performance of the mixer independent of the detection method used. In addition, the effect of the inclusion or omission of an isolator between mixer and intermediate frequency pre‐amplifier has also been evaluated. For the first time, clear conclusions about its influence are driven. The inclusion of the isolator has culminated in more reliable results, although the measured NT values are increased. © 2014 Wiley Periodicals, Inc. Microwave Opt Technol Lett 56:1441–1447, 2014

Design of Subharmonic Mixers above 100 GHz

This paper presents the design and simulation of several fixed-tuned sub-harmonic mixers cover frequencies from 110 GH to 130 GHz, 215 GH to 235 GHz, 310 GH to 350 GHz, and 400 GH to 440 GHz. Among them, 120 GHz, 225 GHz, 330 GHz subharmonic mixers are designed with flip-chipped planar schottky diode mounted onto a suspended quartz-based substrate, the 225 GHz and 425 GHz subharmonic mixers are GaAs membrane integrated, and the 115 GHz subharmonic mixer has been fabricated and tested already.

A Broadband, Low Noise, Integrated 340 GHz Schottky Diode Receiver

A 340 GHz subharmonic Schottky diode mixer and a multioctave (3-16 GHz) custom low noise amplifier (LNA) have been integrated to form a compact receiver front-end module, exhibiting ultra low noise with an exceptional flat response and broadband instantaneous frequency coverage. At room temperature, a receiver noise temperature of 870 K is measured at an LO drive of 1.2 mW at 170 GHz. The total dc power consumption of the LNA is below 120 mW. Measurements are in good agreement with simulations taking the mixer and LNA mismatch interaction into account.

A 122 GHz Sub-Harmonic Mixer With a Modified APDP Topology for IC Integration

This letter presents a modified passive subharmonic mixer (SHM) topology based on an anti-parallel-diode-pair (APDP). It features a differential intermediate frequency output facilitating IC integration and improving common-mode noise rejection. An example 122 GHz SHM has been designed and tested in a 0.13 μm SiGe BiCMOS technology for a 122 GHz radar IC. SiGe HBT transistors have been diode-connected to form the APDP. The example SHM exhibits a conversion loss of 8 dB with a 5 dBm LO pumping power. The measured bandwidth extends from 117 to 124 GHz, adequately covering the 122-123 GHz ISM band, while the input 1 dB compression point and noise figure were measured to be -5 dBm and 8.5 dB respectively. Due to its superior 1/f noise performance and high linearity, the mixer is especially well suited to zero intermediate frequency radars.