Gettering efficiencies of argon, oxygen, silicon, and xenon ions implanted at the back of silicon wafers were determined by recovery time measurements on MOS capacitors. The oxide of these capacitors was grown thermally prior to ion implantation. Gettering efficiencies of ion implantations for oxide‐covered and bare silicon surfaces were evaluated as a function of the damage anneal temperature. Argon ion implantations exhibited a higher gettering capability than oxygen, silicon, and xenon ones. Good impurity sinks are formed by damage generated by ion implantation of oxide‐covered silicon wafers.