Germanium Photodetectors Research Articles

Germanium Single Crystals for Photonics

Germanium (Ge) is a system-forming material of IR photonics for the atmospheric transparency window of 8–14 µm. For optics of the 3–5 µm range, more widespread silicon (Si), which has phonon absorption bands in the long-wave region, is predominantly used. A technology for growing Ge single crystals has been developed, allowing the production of precision optical parts up to 500 mm in diameter. Ge is used primarily for the production of transparent optical parts for thermal imaging devices in the 8–14 µm range. In addition, germanium components are widely used in a large number of optical devices where such properties as mechanical strength, good thermal properties, and climatic resistance are required. A very important area of application of germanium is nonlinear optics, primarily acousto-optics. The influence of doping impurities and temperature on the absorption of IR radiation in germanium is considered in detail. The properties of germanium photodetectors are reported, primarily on the effect of photon drag of holes. Optical properties in the THz range are considered. The features of optical properties for all five stable isotopes of germanium are studied. The isotopic shift of absorption bands in the IR region, caused by phonon phenomena, which was discovered by the authors for the first time, is considered.

Normal-Incidence Germanium Photodetectors Integrated with Polymer Microlenses for Optical Fiber Communication Applications.

We present a novel photon-acid diffusion method to integrate polymer microlenses (MLs) on a four-channel, high-speed photo-receiver consisting of normal-incidence germanium (Ge) p-i-n photodiodes (PDs) fabricated on a 200 mm Si substrate. For a 29 µm diameter PD capped with a 54 µm diameter ML, its dark current, responsivity, 3 dB bandwidth (BW), and effective aperture size at -3 V bias and 850 nm wavelength are measured to be 138 nA, 0.6 A/W, 21.4 GHz, and 54 µm, respectively. The enlarged aperture size significantly decouples the tradeoff between aperture size and BW and enhances the optical fiber misalignment tolerance from ±5 µm to ±15 µm to ease the module packaging precision. The sensitivity of the photo-receiver is measured to be -9.2 dBm at 25.78 Gb/s with a bit error rate of 10-12 using non-return-to-zero (NRZ) transmission. Reliability tests are performed, and the results show that the fabricated Ge PDs integrated with polymer MLs pass the GR-468 reliability assurance standard. The demonstrated photo-receiver, a first of its kind to the best of our knowledge, features decent performance, high yield, high throughput, low cost, and compatibility with complementary metal-oxide-semiconductor (CMOS) fabrication processes, and may be further applied to 400 Gb/s pulse-amplitude modulation four-level (PAM4) communication.

High-uniformity and high-performance waveguide Ge photodetectors for the O and C bands.

This paper presents the test results for high-performance and high-uniformity waveguide silicon-based germanium (Ge) photodetectors (PDs) for the O band and C band. Both wafer-scale and chip-scale test results are provided. The fabricated lateral p-i-n (LPIN) PDs exhibit a responsivity of 0.97A/W at a bias of -2V, a bandwidth of 60GHz, and a no-return-to-zero (NRZ) eye diagram rate of 53.125Gb/s. Additionally, an average dark current of 22.4nA was obtained in the vertical p-i-n (VPIN) PDs at -2V by optimizing the doping process. The device can reach an average responsivity of 0.9A/W in the O band. The standard deviation in a wafer with a dark current and responsivity is as low as 7.77nA and 0.03A/W at -2V, respectively.

On-chip germanium photodetector with interleaved junctions for the 2-µm wave band.

Recently, the 2-µm wave band has gained increased interest due to its potential application for the next-generation optical communication. As a proven integration platform, silicon photonics also benefit from the lower nonlinear absorption and larger electro-optic coefficient. However, this spectral range is far beyond the photodetection range of germanium, which places an ultimate limit for on-chip applications. In this work, we demonstrate a waveguide-coupled photodetector enabled by a tensile strain-induced absorption in germanium. Responsivity is greatly enhanced by the proposed interleaved junction structure. The device is designed on a 220-nm silicon-on-insulator and is fabricated via a standard silicon photonic foundry process. By utilizing different interleaved PN junction spacing configurations, we were able to measure a responsivity of 0.107 A/W at 1950 nm with a low bias voltage of -6.4 V for the 500-μm-long device. Additionally, the 3-dB bandwidth of the device was measured to be up to 7.1 GHz. Furthermore, we successfully achieved data transmission at a rate of 20 Gb/s using non-return-to-zero on-off keying modulation.

High-responsivity on-chip waveguide coupled germanium photodetector for 2 μm waveband

Recently, the emerging 2 μm waveband has gained increasing interest due to its great potential for a wide scope of applications. Compared with the existing optical communication windows at shorter wavelengths, it also offers distinct advantages of lower nonlinear absorption, better fabrication tolerance, and larger free carrier plasma effects for silicon photonics, which has been a proven device technology. While much progress has been witnessed for silicon photonics at the 2 μm waveband, the primary challenge still exists for on-chip detectors. Despite the maturity and compatibility of the waveguide coupled photodetectors made of germanium, the 2 μm regime is far beyond its cutoff wavelength. In this work, we demonstrate an efficient and high-speed on-chip waveguide-coupled germanium photodetector operating at the 2 μm waveband. The weak sub-bandgap absorption of epitaxial germanium is greatly enhanced by a lateral separation absorption charge multiplication structure. The detector is fabricated by the standard process offered by a commercial foundry. The device has a benchmark performance with responsivity of 1.05 A/W and 3 dB bandwidth of 7.12 GHz, which is able to receive high-speed signals with up to 20 Gbit/s data rate. The availability of such an efficient and fast on-chip detector circumvents the barriers between silicon photonic integrated circuits and the potential applications at the 2 μm waveband.

Material classification based on a SWIR discrete spectroscopy approach

A crucial yet difficult task for waste management is the identification of raw materials like plastic, glass, aluminum, and paper. Most previous studies use the diffused reflection spectroscopy for classification purposes. Despite the benefits in terms of speed and simplicity offered by modern compact spectrometers, their cost and the need for an external, wide-spectrum source of illumination create complications. To address this issue, the present paper proposes a discrete spectroscopy method that utilizes short-wave infrared (SWIR) reflectance to identify waste materials, exploiting a small set of selected wavelengths. This approach reduces the complexity of the classification data analysis and offers a more practical alternative to the conventional method. The proposed system comprises a single germanium photodetector and 10 different light emitting diodes (LEDs). The LED wavelengths are selected to maximize the system sensitivity towards a set of seven different waste materials. Using a classification strategy relying on support vector machines, the proposed methodology reaches a classification accuracy up to 98%.

Design and Demonstration of High-Speed and High-Power Traveling-Wave Germanium Photodetector

Design and Demonstration of High-Speed and High-Power Traveling-Wave Germanium Photodetector

Research on Germanium Photodetector with Multi-Mode Waveguide Input

In this work, a vertical N-I-P germanium (Ge) photodetector (PD) with a multi-mode waveguide input is presented. The fabricated devices exhibit a low dark current of 10 nA at bias of −1 V, and a high responsivity of exceeding 0.75 A/W over the wavelength range from 1270 to 1350 nm. High-frequency characteristics measurements show that the photodetector has a 3 dB opto-electrical (OE) bandwidth of 23 GHz under −3 V bias, which can be further improved by optimization of the photodetector configuration. A 50 Gb/s clear eye diagram with a non-return-to-zero (NRZ) modulation format is demonstrated. By using a single-mode excitation source, which is used to simulate light coming from the wavelength division multiplexing (WDM) devices, and sweeping its position, it is shown that the multi-mode input photodetector can be utilized in a WDM receiver to achieve both high responsivity and a flat-top passband.

Broad-Spectrum Germanium Photodetector Based on the Ytterbium-Doped Perovskite Nanocrystal Downshifting Effect

Due to the “dead zone” effect, it has been difficult for typical infrared germanium photodetectors to take into account the detection efficiency of ultraviolet–visible and infrared bands at the same time. In this work, a strategy for overcoming this dilemma is proposed using the downshifting effect of ytterbium-doped perovskite nanocrystals. The nanocrystals extend the response spectrum of the germanium photodetector to the ultraviolet band, and the photoresponsivity at 275 nm was increased to ∼450% under a reverse bias voltage of 1 V. A wide detection range of 275–1650 nm was realized, which indicates the advantages of ytterbium-doped perovskite nanocrystals in broad-spectrum photodetectors.

Integration Aspects of Plasmonic TiN-based Nano-Hole-Arrays on Ge Photodetectorsin a 200mm Wafer CMOS Compatible Silicon Technology

During the last decade optical sensor technologies have attracted increased attention for various applications. Plasmon-based optical sensor concepts for the detection of refractive index changes that rely on propagating surface-plasmon polaritons at metal-dielectric interfaces or on localized plasmons in metallic nanostructures prove their potential for these application due to their fast detection speed, high specificity and sensitivities [1, 2]. Combining plasmonic structures directly with optoelectronic devices could enable a high level of integration, however, it represents a significant technological challenge to develop an on-chip solution for these concepts including the integration of sensor and detector components. Previous works demonstrated first approaches mainly for the integration of refractive index sensor components on wafer level [3, 4]. In [5] and [6] a proof-of-concept of a fully integrated on-chip solution with high sensitivities was presented, which can be easily combined with microfluidics [7] for potential applications in biosensing. In this concept, a nanohole array (NHA) was structured in a 100 nm thick aluminum layer on top of a vertical PIN germanium photodetector (GePD) with an intrinsic germanium sheet of 480 nm. This sensor concept relies on extraordinary optical transmission through the NHA [8]: Light transmission is only possible for narrow wavelength ranges determined by the NHA geometry which determine the transmission peaks at the resonance wavelength of the NHA. Thus, the NHA acts as a high quality wavelength filter. Due to the change in the refractive index, a material under test (MUT) contacting directly the surface of the NHA, provokes a shift of the wavelength maximum, which can be detected by measuring the photocurrent spectra of the GePD. While responsivities and sensitivities of (0 V) = 0.075 A/W and = 1200 nm/RIU could be attained in this proof-of-concept device [6, 7], the semiconductor device layers were deposited using molecular beam epitaxy (MBE). Furthermore the vertical PIN GePD was realized by a mesa procedure to enable large areas for top illuminated operations. These techniques are unsuitable for an industrial CMOS fabrication process with high throughput. Therefore, the development of a CMOS compatible technology process with low costs and high yields is an important step towards large-scale fabrication of this sensor concept.In this work we present the progress for the realization of a surface plasmon resonance (SPR) refractive index sensor in a 200 mm wafer Silicon based technology. One main challenge is the fabrication of a large area photodetector for top illuminated sensor devices. We developed a process, which is mainly based on the IHP electronic photonic integrated circuits (ePIC) technology [9]. This ePIC technology enables the production of waveguide coupled lateral PIN GePDs with high bandwidth and high responsivities [10]. However, these PDs are unsuitable for top illuminated applications because of their small germanium areas. Due to certain process conditions with respect to chemical mechanical polishing procedures there are limits for feasible large detector areas. Furthermore, large detector areas for lateral PIN GePDs would result in very low electric fields in the intrinsic zone where carriers are generated by photon absorption. Thus, very high voltages for reversed bias are necessary for sufficient carrier drifts.For the first time we have developed a modern detector design concept which is compatible to the IHP ePIC technology. This concept allows the realization of large area detectors of 1600µm² (40µm x 40µm) with optimized optical responsivities for top illuminated applications. The detector consists of several parallel connected lateral PIN GePDs. We designed different variations and varied Ge width and distance between neighboring GePDs in order to investigate process limits. The p- and n-doped regions were defined by dopant implantation using a photo resist mask. We used a finger-like design as implantation masks to enable one contact area for each p-doped and each n-doped region (Fig. 1). This contacting approach differs from the standard GePD offered in the IHP ePIC technology. We analyzed I-V characteristics in dependence of detector design and contacting scheme (Fig. 2). In addition, process adjustments for the optimization of the germanium quality were investigated to reduce dark currents and to improve optical responsivities (Fig.3).Titanium nitride (TiN) is very promising metallic alloy with respect to thickness homogeneity and low surface roughness. Therefore we used titanium nitride which was deposited by a sputtering process to develop plasmonic active NHA layers. Various process development runs were done to evaluate the NHA performance. Ellipsometry and atomic force microscope measurements were performed to characterize the quality of the TiN layer (Fig.4). Figure 1

Gain-enabled optical delay readout unit using CMOS-compatible avalanche photodetectors

A compact time delay unit is fundamental to integrated photonic circuits with applications in, for example, optical beam-forming networks, photonic equalization, and finite and infinite impulse response optical filtering. In this paper, we report a novel gain-enabled delay readout system using a tunable optical carrier, low-frequency RF signal and CMOS-compatible photodetectors, suitable for silicon photonic integration. The characterization method relies on direct phase measurement of an input RF signal and thereafter extraction of the delay profile. Both integrated silicon and germanium photodetectors coupled with low-bandwidth electronics are used to characterize a microring resonator-based, true-time delay unit under distinct ring–bus coupling formats. The detectors, used in both linear and avalanche mode, are shown to be successful as optical-to-electrical converters and RF amplifiers without introducing significant phase distortion. For a Si–Ge separate-absorption-charge-multiplication avalanche detector, an RF amplification of 10 dB is observed relative to a Ge PIN linear detector. An all-silicon defect-mediated avalanche photodetector is shown to have a 3 dB RF amplification compared to the same PIN detector. All ring delay measurement results are validated by full-wave simulation. Additionally, the impact of photodetector biasing and system linearity is analyzed.

Integration Aspects of Plasmonic TiN-based Nano-Hole-Arrays on Ge Photodetectorsin a 200mm Wafer CMOS Compatible Silicon Technology

In this work we present the progress in regard to the integration of a surface plasmon resonance refractive index sensor into a CMOS compatible 200 mm wafer silicon-based technology. Our approach pursues the combination of germanium photodetectors with metallic nanohole arrays. The paper is focused on the technology development to fabricate large area photodetectors based on a modern design concept. In a first iteration we achieved a leakage current density of 82 mA/cm2 at reverse bias of 0.5 V and a maximum optical responsivity of 0.103 A/W measured with TE polarized light at λ = 1310 nm and a reversed bias of 1 V. For the realization of nanohole arrays we used thin Titanium nitride (TiN) layers deposited by a sputtering process. We were able to produce very homogenous TiN layers with a thickness deviation of around 10 % and RMS of 1.413 nm for 150 nm thick TiN layers.

High-speed and high-power germanium photodetector based on a trapezoidal absorber.

A compact high-power germanium photodetector (Ge PD) is experimentally demonstrated by re-engineering light distribution in the absorber. Compared with a conventional Ge PD, the proposed structure shows a DC saturation photocurrent improved by 28.9% and 3 dB bandwidth as high as 49.5 GHz at 0.1 mA. Under the same photocurrent of 10.5 mA, the proposed Ge PD shows a 3 dB bandwidth of 11.1 GHz, which is almost double the conventional Ge PD (5.6 GHz). The 25 Gb/s eye-diagram measurement verifies the improved power handling capability. The compact size and manufacturing simplicity of this structure will enable new applications for integrated silicon photonics.

Integrated scanning spectrometer with a tunable micro-ring resonator and an arrayed waveguide grating

Integrated spectrometers with both wide optical bandwidths and high spectral resolutions are required in applications such as spectral domain optical coherence tomography (SD-OCT). Here we propose a compact integrated scanning spectrometer by using a tunable micro-ring resonator (MRR) integrated with a single arrayed waveguide grating for operation in the 1265–1335-nm range. The spectral resolution of the spectrometer is determined by the quality factor of the MRR, and the optical bandwidth is defined by the free spectral range of the arrayed waveguide grating. The spectrometer is integrated with on-chip germanium photodetectors, which enable direct electrical readout. A 70-nm optical bandwidth and a 0.2-nm channel spacing enabled by scanning the MRR across one free spectral range are demonstrated, which offer a total of 350 wavelength channels with 31-kHz wavelength scanning speed. The integrated spectrometer is applied to measure different spectra and the interference signals from an SD-OCT system, which shows its great potential for future applications in sensing and imaging systems.

112 Gb/s PAM-4 Silicon Photonics Receiver Integrated With SiGe-BiCMOS Linear TIA

We have developed a silicon photonics receiver integrated with a SiGe-BiCMOS linear transimpedance amplifier (TIA) using the flip-chip bonding technology to assist in resolving the I/O bottleneck problem in inter-chip data communication. The proposed device demonstrated optical 112 Gb/s four-level pulse amplitude modulation (PAM-4) operations and clear eye openings without any equalization for the pseudorandom binary sequence <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$2^{\mathbf {15}}$ </tex-math></inline-formula> – 1 signal. The 3 dB bandwidth and transimpedance gain were designed to be 37.1 GHz and 60.1 dB <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\boldsymbol {\Omega } $ </tex-math></inline-formula> , respectively, at a supply voltage of 3.3 V. The consumption current of the linear TIA was 95.1 mA, and it resulted in a power consumption of 314 mW (2.8 pJ/bit). A linear TIA circuit is a key technology for PAM-4 operation; therefore, we discussed the linearity of our receiver response through eye diagrams and simulation. The measured eye diagrams agreed with the simulation results, and the proposed device maintained a linear response for up to 450 <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\boldsymbol {\mu }\text{A}_{\mathbf {p-p}}$ </tex-math></inline-formula> input current. In addition, its operation rate of 112 Gb/s is the highest operation rate reported for a silicon photonics PAM-4 receiver based on flip-chip 3D integration with a germanium photodetector and a SiGe-BiCMOS linear TIA.

Optimal Design and Noise Analysis of High-Performance DBR-Integrated Lateral Germanium (Ge) Photodetectors for SWIR Applications

This work presents the high-performance Si/SiO2 distributed Bragg reflector (DBR)-integrated lateral germanium (Ge) p-i-n photodetectors (PDs) for atmospheric gas sensing and fiber-optic telecommunication networks in the short-wave infrared (SWIR) regime. In addition, this study also proposes an optoelectronic compact small-signal noise equivalent circuit model (SSNECM) of the designed device to compute the noise performance at the detectors&#x2019; output. Various figure-of merits including current under dark and illumination, responsivity, detectivity, bandwidth, and the noise of the proposed device are estimated at the room temperature (RT) for an incident optical power of 0.5 &#x03BC;W. Furthermore, the impact of width and height scaling on dark current, responsivity, and bandwidth are investigated to optimize the proposed device. The validation of the proposed model is done by comparing various parameters including dark current, responsivity, and detectivity of the designed device with other Ge PDs. The estimated results show the reduced trade-off between responsivity and bandwidth of the designed device. At &#x03BB;=1550 nm, the proposed device achieves a high detectivity and SNR of &#x003E;2&#x00D7;1011Jones and 120 dB (at 3 THz), respectively, with the bias voltage of -2V. These encouraging results pave the path for the future development of low-noise and high-speed detectors.

Towards Integrated Single Photon Avalanche Detectors for Visible Light (Invited)

Integrated avalanche photodetectors (APDs) are essential and ubiquitous devices in quantum photonics applications. While free-space APDs are a mature technology, the development of integrated APDs for visible light is still in its infancy. In this invited talk, we review our work on integrated photodetectors – the Germanium photodetector for O band, and the first integrated silicon (Si) APD for visible light. A unique feature of the integrated Si APD system for visible light is the end-fire coupling between the silicon nitride (SiN) waveguide and the Si APD in the same layer. This allows for broadband and high-efficiency coupling of light from the SiN waveguide to the Si APD for light detection, without the drawbacks of conventional interlayer coupling. Our work on integrated Si APDs based on Geiger-mode and our progress towards achieving single photon detection for visible light is discussed in the talk.

Black Germanium Photodetector Exceeds External Quantum Efficiency of 160%

AbstractIn this work, a viable method is demonstrated to realize high‐performance germanium (Ge) photodetectors (PDs) on the nanostructured Ge surface, namely black Ge, formed by chlorine (Cl2) gas‐based reactive ion etching at room temperature. Black Ge surface has spike‐like pyramidal structures with a width and height up to 150 and 570 nm, respectively. Average reflection of black Ge is reduced to 2% at a wavelength range from 1 to 2 µm, while that of planar Ge is ≈37%. Light absorption is strongly enhanced by the significantly reduced reflection, thereby leading to an increase in responsivity of black Ge PDs. Moreover, external quantum efficiency (EQE) exceeds 160% at 1550 nm, indicating the existence of internal gain resulted from multiple carrier generation in Ge nanostructures. Therefore, this work provides an effective and reliable approach to significantly enhance photodetection performance of Ge‐based optoelectronic devices.

On-chip optical interconnection using integrated germanium light emitters and photodetectors.

Germanium (Ge) is an attractive material for monolithic light sources and photodetectors, but it is not easy to integrate Ge light sources and photodetectors because their optimum device structures differ. In this study, we developed a monolithically integrated Ge light emitting diode (LED) that enables current injection at high density and a Ge photodiode (PD) having low dark current, and we fabricated an on-chip optical interconnection system consisting of the Ge LED, Ge PD, and Si waveguide. We investigated the properties of the fabricated Ge LED and PD and demonstrated on-chip optical interconnection.

High-speed and high-power germanium photodetector with a lateral silicon nitride waveguide

Up to now, the light coupling schemes of germanium-on-silicon photodetectors (Ge-on-Si PDs) could be divided into three main categories: (1) vertical (or normal-incidence) illumination, which can be from the top or back of the wafer/chip, and waveguide-integrated coupling including (2) butt coupling and (3) evanescent coupling. In evanescent coupling the input waveguide can be positioned on top, at the bottom, or lateral to the absorber. Here, to the best of our knowledge, we propose the first concept of Ge-on-Si PD with double lateral silicon nitride ( Si 3 N 4 ) waveguides, which can serve as a novel waveguide-integrated coupling configuration: double lateral coupling. The Ge-on-Si PD with double lateral Si 3 N 4 waveguides features uniform optical field distribution in the Ge region, which is very beneficial to improving the operation speed for high input power. The proposed Ge-on-Si PD is comprehensively characterized by static and dynamic measurements. The typical internal responsivity is evaluated to be 0.52 A/W at an input power of 25 mW. The equivalent circuit model and theoretical 3 dB opto-electrical (OE) bandwidth investigation of Ge-on-Si PD with lateral coupling are implemented. Based on the small-signal (S21) radio-frequency measurements, under 4 mA photocurrent, a 60 GHz bandwidth operating at − 3 V bias voltage is demonstrated. When the photocurrent is up to 12 mA, the 3 dB OE bandwidth still has 36 GHz. With 1 mA photocurrent, the 70, 80, 90, and 100 Gbit/s non-return-to-zero (NRZ) and 100, 120, 140, and 150 Gbit/s four-level pulse amplitude modulation clear openings of eye diagrams are experimentally obtained without utilizing any offline digital signal processing at the receiver side. In order to verify the high-power handling performance in high-speed data transmission, we investigate the eye diagram variations with the increase of photocurrents. The clear open electrical eye diagrams of 60 Gbit/s NRZ under 20 mA photocurrent are also obtained. Overall, the proposed lateral Si 3 N 4 waveguide structure is flexibly extendable to a light coupling configuration of PDs, which makes it very attractive for developing high-performance silicon photonic integrated circuits in the future.