As additive manufacturing in its various forms is shifting the paradigm of traditional manufacturing, the same space opens in the field of thin film deposition. Atomic layer deposition is, due to its inherent separation of reactions, uniquely suitable for adaptation into a 3D printer. In fact, the concept of spatial atomic layer deposition, which can be considered as a precursor for 3D atomic layer printing, goes all the way back to 1974.1 Despite the many challenges of creation and miniaturization of spatial ALD reactors, atomic layer 3D printing was successfully proved as a concept recently.2,3 Confining spatial ALD (atomic layer deposition) laterally to a spot with a size in the micron range allows one to perform ALD cycles by repeated passes of the deposition head above the substrate. The pattern defined by the motions of the deposition head may be arbitrarily complex. This concept allows for the definition of deposits in three dimensions in the manner of classical additive manufacturing (3D printing). However, the vertical resolution of the shapes generated is defined by the surface chemical principles of ALD, and therefore is on the order of single atoms. The lateral resolution depends on the printing head and the gas flows and is currently on the order of hundreds of μm.We have demonstrated the self-limiting behavior of this atomic-layer additive manufacturing (ALAM) procedure for several materials. Under atmospheric conditions, the deposition of TiO2 occurs with the same growth per pass as in conventional ALD. The cross-section of a deposit exhibits a horizontal surface and sharp edges. The self-limiting behavior of the surface chemistry is maintained. As an example of a noble metal, Pt grows in a highly crystalline and even oriented form. Air-sensitive precursors such as the metal alkyls can be handled safely in aerobic conditions, and the growth of Al2O3 and ZnO occurs with familiar characteristics.Thus, ALAM is a novel method allowing for the direct generation of multimaterial structures without the need for preliminary or subsequent patterning. However, for the best performance of atomic layer 3D printing, the influence of geometry of both the reactor and the pattern being printed has to be examined. Generally, due to the necessary spatial separation of precursor and reactant, edge effects are necessarily present. Moreover, deviations from the perfect printing geometry cause additional line edge effects and selectivity defects. Additionally, we created a general theoretical model of effects caused by spatial separation on the printed pattern. The theoretical model was then confronted with experiments performed on the atomic layer 3D printer developed by ATLANT 3D Nanosystems. The theoretical effects and samples analyzed include edges of lines, overlaps of lines including rastering and gradients, multiple paths overlaps during pattern printing and step pattern printing. To prove that these effects are independent of the specific material, the effects are explored for TiO2, ZnO, and Pt.[1] Tuomo Suntola, Jorma Antson. Method for producing compound thin films. US4058430A, United States Patent and Trademark Office, 29 November 1974.[2] Ivan Kundrata, Maksym Plakhotnyuk, Maïssa K. S. Barr, Sarah Tymek, Karol Fröhlich, Julien Bachmann (2020, June 30) An Atomic-Layer 3D Printer [Conference presentation] ALD/ALE 2020[3] Cesar Arturo Masse de la Huerta, Viet H. Nguyen, Abderrahime Sekkat, Chiara Crivello, Fidel Toldra-Reig, Pedro Veiga, Carmen Jimenez, Serge Quessada, David Muñoz-Rojas. Facile patterning of functional materials via gas-phase 3D printing [2020, Cornell University Condensed Matter, Materials Science] Figure 1
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