Geometric Phase Analysis Research Articles

Orientation-dependent strain and dislocation in HVPE-grown α -Ga2O3 epilayers on sapphire substrates

Orientation-dependent substrates provide effective platforms for achieving α-Ga2O3 with low dislocation densities, whereas the associated strain and dislocation dynamics have not been fully explored. Herein, we investigated the evolution of growth mode, interfacial strain, and dislocation propagation in the α-Ga2O3 epitaxial layer with various orientations, grown by the halide vapor-phase epitaxy. Strain tensor theory and geometric phase analysis indicate that the m-plane α-Ga2O3 epitaxial layer exhibits the lowest misfit tensile strain, measured at εxx = 1.46% and εyy = 1.81%, resulting in the lowest edge dislocation density. The m-plane lattice exhibits an inclination of 33.60°, while the c-plane lattice is horizontally aligned and the a-plane lattice oriented perpendicularly. The orientation-dependent growth significantly influences stress relaxation through the generation of misfit dislocations, originating from either basal or prismatic slip. Edge dislocations, induced by misfit dislocations, favor the c-axis, remaining well confined within the in-plane interfacial layer of the m-plane α-Ga2O3, leading to reduced low edge dislocation density in the subsequent thick epitaxial layer. These findings shed light on the epitaxial dynamics of α-Ga2O3 heteroepitaxy, paving the way for the development of high-performance power devices.

Radiation damage in He irradiated nanolayered Zr/Nb at different temperatures

Nanolayered Zr/Nb metals are considered promising for advanced nuclear reactors due to their superior resistance to irradiation. In this study, Zr/Nb multilayers were irradiated with 50 keV He+ ions to a fluence of 1 × 1017 ions/cm2 at temperatures of room temperature, 350 °C, and 500 °C to investigate irradiation-induced structural changes. X-ray diffraction (XRD) analysis indicated low-angle shifts of 0.08-0.54° and high-angle shifts of 0.08-0.42° in the irradiated Zr and Nb layers, suggesting tensile and compressive strains, respectively. At 500 °C, the selected-area electron diffraction (SAED) observed a 9.2% lattice expansion in Zr and a 0.13% contraction in Nb. Geometric phase analysis (GPA) revealed varying strain distributions, transitioning from incoherent to coherent interfaces with increasing irradiation damage. Transmission electron microscopy (TEM) identified the presence of He bubbles in the Zr layer as one of the reasons for strain differences. Nanoindentation tests showed an increase at a depth of 150 nm hardness of 0.831 GPa at 500 °C compared to 350 °C. These results are attributed to differences in crystal structure, vacancy dynamics, interfacial effects, and lattice strain influences. Stability of Zr/Nb interfaces after He irradiation was studied. This study provides insights into the radiation behavior of Zr/Nb nanoscale metallic materials, enhancing our understanding of their potential as structural materials in nuclear energy systems.

Epitaxial Thin Film Growth on Recycled SrTiO3 Substrates Toward Sustainable Processing of Complex Oxides.

Complex oxide thin films cover a range of physical properties and multifunctionalities that are critical for logic, memory, and optical devices. Typically, the high-quality epitaxial growth of these complex oxide thin films requires single crystalline oxide substrates such as SrTiO3 (STO), MgO, LaAlO3, a-Al2O3, and many others. Recent successes in transferring these complex oxides as free-standing films not only offer great opportunities in integrating complex oxides on other devices, but also present enormous opportunities in recycling the deposited substrates after transfer for cost-effective and sustainable processing of complex oxide thin films. In this work, the surface modification effects introduced on the recycled STO are investigated, and their impacts on the microstructure and properties of subsequently grown epitaxial oxide thin films are assessed and compared with those grown on the pristine substrates. Detailed analyses using high-resolution scanning transmission electron microscopy and geometric phase analysis demonstrate distinct strain states on the surfaces of the recycled STO versus the pristine substrates, suggesting a pre-strain state in the recycled STO substrates due to the previous deposition layer. These findings offer opportunities in growing highly mismatched oxide films on the recycled STO substrates with enhanced physical properties. Specifically, yttrium iron garnet (Y3Fe5O12) films grown on recycled STO present different ferromagnetic responses compared to that on the pristine substrates, underscoring the effects of surface modification. The study demonstrates the feasibility of reuse and redeposition using recycled substrates. Via careful handling and preparation, high-quality epitaxial thin films can be grown on recycled substrates with comparable or even better structural and physical properties toward sustainable process of complex oxide devices.

Time-Dependent Evolution of Al-Al4C3 Composite Microstructure and Hardness during the Sintering Process.

In this study, Al-Al4C3 compounds were manufactured by mechanical milling followed by heat treatment. To analyze the microstructural evolution, the composites were sintered at 550 °C at different sintering times of 2, 4 and 6 h. The mechanical results suggest that dislocation density and crystallite size primarily contribute to hardening before the sintering process, with a minimal contribution from particle dispersion in this condition. The compound exhibited a significant 75% increase in hardness after 2 h of sintering, primarily attributed to the nucleation and growth of Al4C3 nanorods. The HRTEM analysis, combined with geometric phase analysis (GPA) at and near the Al-Al4C3 interface of the nanorods, revealed strain field distributions primarily associated with partial screw dislocations and the presence of closely spaced dislocation dipoles. These findings are consistent with the microstructural parameters determined from X-ray diffraction pattern analysis using the convolutional multiple whole profile (CMWP) method. This analysis showed that the predominant dislocation character is primarily of the screw type, with the dislocation dipoles being closely correlated. Based on these results, it is suggested that samples with a lower weight percentage of reinforcement and longer sintering times may experience reduced brittleness in Al/Al4C3 composites. Strengthening contributions were calculated using the Langford-Cohen and Taylor equations.

Non-radiative recombination centres in InGaN/GaN nanowires revealed by statistical analysis of cathodoluminescence intensity maps and electron microscopy

The methodology of statistical analysis of cathodoluminescence (CL) intensity mappings on ensembles of several hundreds of InGaN/GaN nanowires (NWs) used to quantify non-radiative recombination centres (NRCs) was validated on InGaN/GaN NWs exhibiting spatially homogeneous cathodoluminescence at the scale of single NWs. Cathodoluminescence intensity variations obeying Poisson's statistics were assigned to the presence of randomly incorporated point defects acting as NRCs. Additionally, another type of NRCs, namely extended defects leading to spatially inhomogeneous cathodoluminescence intensity at the scale of single InGaN/GaN NWs are revealed by high resolution scanning transmission electron microscopy, geometrical phase analysis and two-beam diffraction conditions techniques. Such defects are responsible for deviations from Poisson's statistics, allowing one to achieve a rapid evaluation of the crystallographic and optical properties of several hundreds of NWs in a single cathodoluminescence intensity mapping experiment.

Quantum States Induced by Strong Interface Coupling in a 2D VSe2/Bi2Se3 Heterostructure.

We have successfully fabricated single-layer (SL) 1T-VSe2/Bi2Se3 heterostructures using molecular beam epitaxy (MBE), which exhibits uniform moiré patterns on the heterostructure surface. Scanning tunneling microscopy/spectroscopy (STM/STS) reveals a notable quantum state near the Fermi energy, robust across the entire moiré lattice. This quantum state peak shifts slightly across different domain ranges, suggesting an elastic strain dependence in SL VSe2, confirmed by geometric phase analysis (GPA) simulations. Density functional theory (DFT) calculations indicate that the enhanced quantum state results from charge redistribution between the substrate and the epifilm with the orbitals of Se atoms in the deformed VSe2 playing a dominant role.

Improving mechanical properties and corrosion behavior of biomedical Ti-3Zr-2Sn-3Mo-25Nb alloy through laser surface remelting

Laser surface remelting offers a promising approach to enhance both the mechanical properties and corrosion resistance of metallic materials by tailoring their surface microstructures. This investigation specifically observed a phase transformation in the Ti-3Zr-2Sn-3Mo-25Nb (TLM) alloy from β to lamellar martensite α“ during the process, resulting in a refined grain structure. Geometrical phase analysis (GPA) revealed heightened internal compressive stress and the accumulation of dislocations along the β/α” interface, contributing to increased strength following laser treatment. Notably, the treated TLM alloy exhibited improved ductility, attributed to the presence of {332} 〈113〉 twinning during dynamic recrystallization. Moreover, the laser-treated surface significantly enhanced corrosion resistance compared to the untreated alloy. This study is anticipated to present an effective approach to prolonging the lifespan of TLM alloy by manipulating its surface microstructure through laser surface remelting.

Semi-destructive methods for evaluating the micro-scale residual stresses of carbon fiber reinforced polymers

Micro-scale residual stress in carbon fiber reinforced polymers have a significant impact on their mechanical performance. The residual stresses in the carbon fibers were released by micro-slotting and micro-ring-core methods using focused ion beam (FIB). The released deformation fields were captured by cross-gratings and mapped by geometric phase analysis (GPA) and digital image correlation (DIC) methods. The in-plane residual stresses in the carbon fibers were experimentally determined to be −40.5 MPa using elastic constitutive relations, which is consistent with the composites cylinder model. The axial compressive residual stresses in the fibers were found to be greater than −100 MPa. Moreover, the maximum value of residual stress in the polymer matrix was observed at the interface, potentially serving as a crack initiation site.

Lattice strain induced by trace Pt single atoms in nickel for accelerating industrial hydrogen evolution

Strategically designing the electrocatalytic system and cleverly inducing strain is an effective approach to balance the cost and activity of Pt-based electrocatalysts for industrial-scale hydrogen production. Herein, we present a unipolar pulsed electrodeposition (UPED) strategy to induce strain in the Ni lattice by introducing trace amounts of Pt single atoms (SAs) (0.22 wt%). The overpotential decreased by 183 mV at 10 mA cm−2 in 1.0 M KOH after introducing trace amounts of PtSAs. The industrial electrolyzer, assembled with PtSAsNi cathode and a commercial NiFeOx anode, requires a cell voltage of 1.90 V to attain 1 A cm−2 of current density and remains stable for 280 h, demonstrating significant potential for practical applications. Spherical aberration corrected scanning transmission electron microscopy (AC-STEM), X-ray absorption (XAS), and geometric phase analysis (GPA) indicate that the introduction of trace amounts of Pt SAs induces tensile strain in the Ni lattice, thereby altering the local electronic structure and coordination environment around cubic Ni for enhancing the water decomposition kinetics and fundamentally changing the reaction pathway. The doping-strain strategy showcases conformational relationships that could offer new ideas to construct efficient hydrogen evolution reaction (HER) electrocatalysts for industrial hydrogen production in the future.

Comparative analysis of microstructure, electrical and optical performance in sidewall etching process for GaN-based green micro-LED

Micro-LEDs show the size-dependent external quantum efficiency (EQE) reduction problem, mainly owing to increased non-radiative recombination loss at the sidewall for smaller chip size. In this work, the evolution of microstructure, surface potential and optical performance of the green micro-LED sidewall was investigated comparatively after inductively coupled plasma (ICP) and tetramethylammonium hydroxide (TMAH) etching through transmission electron microscopy (TEM), Kelvin probe force microscope (KPFM), cathodoluminescence (CL) and time-resolved photoluminescence (TRPL). As confirmed by TEM and geometric phase analysis (GPA), ICP etching causes sidewalls to form atomically rough semi-polar surfaces and increases 25% compressive strain at the sidewall compared to the inside. TMAH solution introduces new sidewall defects due to excessive etching of three atomic layers of InGaN. Holes accumulate at the surface because of build-in electric field as showed by KPFM. The sidewall defects lead to a decrease in carrier lifetime resulting in uneven luminescence of micro-LED mesa. TMAH treatment removes the damaged layer and reduces the non-radiative recombination rate. ICP causes damage to the nanoscale structure, however the influence of sidewall defects on the carrier behavior is in the micron range due to unavoidable surface dangling bonds and surface lattice relaxation. A non-radiative recombination mechanism is proposed based on strain relaxation.

Strain distribution in the active region of InAs-based interband cascade laser

Energy-dispersive x-ray spectroscopy and high-angle annular dark-field in a Cs-corrected scanning transmission electron microscope are employed to characterize the atomic-scale strain distribution in the active region of the InAs-based interband cascade laser. For the first time, energy-dispersive x-ray spectroscopy is utilized for the quantitative calculation of the zero-strain region, by which the geometric phase analysis of high-angle annular dark-field imaging has been carried out. The strain distribution of the active region with high accuracy has been obtained. The analysis of the out-of-plane strain shows that the active region in the InAs-based interband cascade laser is strain-compensated, while a certain degree of elemental intermixing still exists in the active region. This detailed strain distribution can provide valuable insights into the optimization of the growth conditions for the active region such as growth temperature, V/III flux ratio, and growth process to minimize the elemental intermixing and obtain a better performance interface while maintaining the strain-compensated state.

Enhanced plastic deformation ability of copper matrix composites through synergistic strengthening of nano-Al2O3 and Cr particles

The commercial application of Al2O3/Cu composites (ODS copper) with high Al2O3 content is consistently restricted by their plastic deformability. In order to synergistically improve the plastic deformability of Al2O3/Cu composites, Al2O3/Cu–Cr composites with different Cr contents are prepared by internal oxidation combined with heat treatment by replacing part of the Al2O3 particles with Cr phases heat treatment. The effects of Cr content on the microstructure and plastic deformability of Al2O3/Cu–Cr composites are investigated. It is found that the nano-Al2O3 (8 nm) and Cr (25 nm) particles are uniformly distributed in the copper matrix, and both reach a semi-congruent interface with copper matrix. Meanwhile, the copper matrix undergoes a transition from a [111]Cu hard orientation to a [100]Cu soft orientation, and the increase in Cr content leads to a more pronounced degree of recrystallization in the Al2O3/Cu–Cr composites. The results of geometric phase analysis (GPA) show that the coordinated deformability between Cr and Cu is better than that between Al2O3 and Cu. The elongation of 2.5Al2O3/Cu-0.3Cr composite increased to 24.48 % from 22.47 % of the Cr-free 2.8Al2O3/Cu composite. The results of tensile strength calculations show that the tensile strength of Al2O3/Cu–Cr composites is mainly dominated by matrix strengthening and Orowan strengthening induced by Al2O3 particles, while grain strengthening, dislocation strengthening, and Orowan strengthening induced by Cr particles play a secondary role. The correlation coefficient (R2) is 0.95 after fitting the experimental and theoretical values of tensile strength of Al2O3/Cu–Cr composites.

Geometric phase analysis of magnetic skyrmion lattices in Lorentz transmission electron microscopy images

Magnetic skyrmions are quasi-particles with a swirling spin texture that form two-dimensional lattices. Skyrmion lattices can exhibit defects in response to geometric constraints, variations of temperature or applied magnetic fields. Measuring deformations in skyrmion lattices is important to understand the interplay between the lattice structure and external influences. Geometric phase analysis (GPA) is a Fourier-based image processing method that is used to measure deformation fields in high resolution transmission electron microscopy (TEM) images of crystalline materials. Here, we show that GPA can be applied quantitatively to Lorentz TEM images of two-dimensional skyrmion lattices obtained from a chiral magnet of FeGe. First, GPA is used to map deformation fields around a 5–7 dislocation and the results are compared with the linear theory of elasticity. Second, rotation angles between skyrmion crystal grains are measured and compared with angles calculated from the density of dislocations. Third, an orientational order parameter and the corresponding correlation function are calculated to describe the evolution of the disorder as a function of applied magnetic field. The influence of sources of artifacts such as geometric distortions and large defoci are also discussed.

Delusive chirality and periodic strain pattern in moiré systems

Geometric phase analysis (GPA) is a widely used technique for extracting displacement and strain fields from scanning probe images. Here, we demonstrate that GPA should be implemented with caution when several fundamental lattices contribute to the image, in particular in twisted heterostructures featuring moiré patterns. We find that in this case, GPA is likely to suggest the presence of chiral displacement and periodic strain fields, even if the structure is completely relaxed and without distortions. These delusive fields are subject to change with varying twist angles, which could mislead the interpretation of twist angle-dependent properties.

Tensile Strain‐Mediated Bimetallene Nanozyme for Enhanced Photothermal Tumor Catalytic Therapy

AbstractNanozymes have demonstrated significant potential in combating malignant tumor proliferation through catalytic therapy. However, the therapeutic effect is often limited by insufficient catalytic performance. In this study, we propose the utilization of strain engineering in metallenes to fully expose the active regions due to their ultrathin nature. Here, we present the first report on a novel tensile strain‐mediated local amorphous RhRu (la‐RhRu) bimetallene with exceptional intrinsic photothermal effect and photo‐enhanced multiple enzyme‐like activities. Through geometric phase analysis, electron diffraction profile, and X‐ray diffraction, it is revealed that crystalline‐amorphous heterophase boundaries can generate approximately 2 % tensile strain in the bimetallene. The ultrathin structure and in‐plane strain of the bimetallene induce an amplified strain effect. Both experimental and theoretical evidence support the notion that tensile strain promotes multiple enzyme‐like activities. Functioning as a tumor microenvironment (TME)‐responsive nanozyme, la‐RhRu exhibits remarkable therapeutic efficacy both in vitro and in vivo. This work highlights the tremendous potential of atomic‐scale tensile strain engineering strategy in enhancing tumor catalytic therapy.

Tensile Strain-Mediated Bimetallene Nanozyme for Enhanced Photothermal Tumor Catalytic Therapy.

Nanozymes have demonstrated significant potential in combating malignant tumor proliferation through catalytic therapy. However, the therapeutic effect is often limited by insufficient catalytic performance. In this study, we propose the utilization of strain engineering in metallenes to fully expose the active regions due to their ultrathin nature. Here, we present the first report on a novel tensile strain-mediated local amorphous RhRu (la-RhRu) bimetallene with exceptional intrinsic photothermal effect and photo-enhanced multiple enzyme-like activities. Through geometric phase analysis, electron diffraction profile, and X-ray diffraction, it is revealed that crystalline-amorphous heterophase boundaries can generate approximately 2 % tensile strain in the bimetallene. The ultrathin structure and in-plane strain of the bimetallene induce an amplified strain effect. Both experimental and theoretical evidence support the notion that tensile strain promotes multiple enzyme-like activities. Functioning as a tumor microenvironment (TME)-responsive nanozyme, la-RhRu exhibits remarkable therapeutic efficacy both in vitro and in vivo. This work highlights the tremendous potential of atomic-scale tensile strain engineering strategy in enhancing tumor catalytic therapy.

Temperature-induced degradation of GaN HEMT: An in situ heating study

High-power electronics, such as GaN high electron mobility transistors (HEMTs), are expected to perform reliably in high-temperature conditions. This study aims to gain an understanding of the microscopic origin of both material and device vulnerabilities to high temperatures by real-time monitoring of the onset of structural degradation under varying temperature conditions. This is achieved by operating GaN HEMT devices in situ inside a transmission electron microscope (TEM). Electron-transparent specimens are prepared from a bulk device and heated up to 800 °C. High-resolution TEM (HRTEM), scanning TEM (STEM), energy-dispersive x-ray spectroscopy (EDS), and geometric phase analysis (GPA) are performed to evaluate crystal quality, material diffusion, and strain propagation in the sample before and after heating. Gate contact area reduction is visible from 470 °C accompanied by Ni/Au intermixing near the gate/AlGaN interface. Elevated temperatures induce significant out-of-plane lattice expansion at the SiNx/GaN/AlGaN interface, as revealed by geometry-phase GPA strain maps, while in-plane strains remain relatively consistent. Exposure to temperatures exceeding 500 °C leads to almost two orders of magnitude increase in leakage current in bulk devices in this study, which complements the results from our TEM experiment. The findings of this study offer real-time visual insights into identifying the initial location of degradation and highlight the impact of temperature on the bulk device’s structure, electrical properties, and material degradation.

Experimental study of residual stress distribution in interfacial micro-region of SiCf/Ti17 composites via micro-slotting method

Residual stresses in the interface layer significantly affects the mechanical properties of SiCf/Ti17 composites, which inevitably occurs due to the difference in the thermal expansion coefficient during the fabrication process. Therefore, the micro-residual stress at interface layer of SiCf/Ti17 composites should be quantitatively characterized. In this study, the micro-residual stresses at the interface of the composite are released and mapped via micro-slotting method and subset geometric phase analysis (S-GPA). Based on the material microstructure, a residual stress measurement scheme is designed for the interface layer in the radial and tangential directions. And the deformation field, which is calculated via S-GPA, is released, while the corresponding deformation field is obtained via finite element analysis, so that the residual stress can be fitted by above two deformation fields. The results indicate that, in the cross-setion of the fiber, the residual stresses at carbon interface are tensile, which may be beneficial to improve the mechanical properties of the materials. Meanwhile, tensile residual stresses, instead of compressive stresses in the interface layer, do not inhibit energy dissipation during the fracture of the composite.

Atomic‐scale strain analysis for advanced Si/SiGe heterostructure by using transmission electron microscopy

AbstractThree‐dimensional stacked transistors based on Si/SiGe heterojunction are a potential candidate for future low‐power and high‐performance computing in integrated circuits. Observing and accurately measuring strain in Si/SiGe heterojunctions is critical to increasing carrier mobility and improving device performance. Transmission electron microscopy (TEM) with high spatial resolution and analytical capabilities provides technical support for atomic‐scale strain measurement and promotes significant progress in strain mapping technology. This paper reviews atomic‐scale strain analysis for advanced Si/SiGe heterostructure based on TEM techniques. Convergent‐beam electron diffraction, nano‐beam electron diffraction, dark‐field electron holography, and high‐resolution TEM with geometrical phase analysis, are comprehensively discussed in terms of spatial resolution, strain precision, field of view, reference position, and data processing. Also, the advantages and critical issues of these strain analysis methods based on the TEM technique are summarized, and the future direction of TEM techniques in the related areas is prospected.

Atomic-Scale Multimodal Characterization of Self-Assembled InAs/InGaAlAs Quantum Dots.

Self-assembled quantum dots (QDs) are potential candidates for photoelectric and photovoltaic devices, because of their discrete energy levels. The characterization of QDs at the atomic level using a multimodal approach is crucial to improving device performance because QDs are nanostructures with highly correlated structural parameters. In this study, scanning transmission electron microscopy, geometric phase analysis, and atom probe tomography were employed to characterize structural parameters such as the shape, strain, and composition of self-assembled InAs-QDs with InGaAlAs spacer layers. The measurements revealed characteristic AlAs-rich regions above the QDs and InAs-rich regions surrounding the QD columns, which can be explained by the relationship between the effect of strain and surface curvature around the QD. The methodology described in this study accelerates the development of future QD devices because its multiple perspectives reveal phenomena such as atomic-scale segregations and allow for more detailed discussions of the mechanisms of these phenomena.