The results of extensive measurements of the optical transmission of Corning 7940 u.v. grade fused silica made during ambient and elevated temperature irradiations are described. The irradiations include high dose rate pulsed reactor irradiation, moderate dose rate steady state reactor irradiation and a selectable dose rate steady state 1·5 MeV electron irradiation. The growth of the C-band absorption at 2150 Å during ambient temperature irradiation indicates that this absorption is due to the trapping of free electrons at defects; the free electrons and defects both being generated by ionization process. During prolonged elevated temperature irradiation, the C-band absorption reaches a steady-state value due to the combined effects of the generation and annealing of color centers. At a given dose rate, these steady state values decrease with increasing temperature due to the corresponding increase in the annealing rate. Above a dose rate of 0·4 Mrad/sec the steady-state absorption coefficient decreases with increasing dose rate due to radiation annealing. A mathematical model describing the temporal behavior of the C-band absorption during irradiation is also presented.
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