The electrical conductivity of melts in the glass forming system GeSbSe was measured as a function of temperature to greater than 1000°C by a new electrodes method. Compositions inside the glass forming region show typical semiconducting behavior, with energy gaps in the range 1–2 eV, up to several hundred degrees above the softening point; at still higher temperatures the conductivities increase more rapidly with temperature. This sharp increase in conductivity probably results from a change in short-range order wherby average coordination numbers larger than the valencies of the elements are reached. In compositions well outside the glass forming region, i.e., with large Sb- and Ge-contents, the melts show metallic conductivity. In the transition region in which glasses are only obtained by very rapidly quenching small samples in water, a relatively high, but not metallic, conductivity was found. It is thought that these essentially glassy melts contain micro regions of a second, highly conducting phase. The elements Ge and Sb, with their tendency to form directed (sp)-hybrid bonds, promote the formation of well developed spatial networks. When the Ge- and Sb-content is high, the atoms can become mobile in the melt only if the bonding goes over to a mesomeric pσ-system, as has been found in the melting of elemental Ge. This leads to a closer packing (CN = 6) and metallic-like conductivity. The conductivity measurements revealed two-phase melts over part of the GeGeSe system. Liquid immiscibility was also confirmed in the SbSe system, but over a slightly different composition range than previously reported. The critical temperature for mixing is around 1000°C.
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