Abstract The feasibility of joining SiC and SiC/SiC composites using Ge-based transient liquid phases was examined by measuring the contact angles of Ge and Ge-rich Ge-Si alloys on both SiC and reaction bonded SiC (RB-SiC). The contact angle decreased with increasing anneal time and with increasing anneal temperature. The contact angle of molten Ge on SiC at 1150°C after 180 min was ≈80°; contact angles on RB-SiC under the same conditions were greater than those on SiC. The addition of small amounts of Si to the Ge resulted in a significant decrease in the contact angle. This beneficial change was observed when experiments were conducted using SiC, RB-SiC, and even C. A powder of Ge or of a mechanical mixture of Ge and Si powders was applied to the interface between polished SiC blocks and the assembly was heated to 1150°C to form a bond via a Ge-based interlayer. While the blocks were joined and exhibited some strength, the resulting strengths were low, and further research is required to produce the level and reproducibility of strength required for practical applications.