In this paper, Ge/Al 2O 3 multilayer systems were grown by pulsed laser ablation. The grown samples were annealed at 900 °C to promote the formation of Ge nanocrystals. Rutherford backscattering spectroscopy and transmission electron microscopy confirmed the presence of a multilayer system. Grazing incidence small angles X-ray scattering technique demonstrates the formation of Ge nanoclusters formed between alumina layers. Room temperature I– V measurements showed weak carrier trapping in the system. This was explained by the leakage caused by Ge diffusion through the multilayer.