Gate-tunable Spin Research Articles

Designer spin-orbit superlattices: symmetry-protected Dirac cones and spin Berry curvature in two-dimensional van der Waals metamaterials

The emergence of strong relativistic spin-orbit effects in low-dimensional systems provides a rich opportunity for exploring unconventional states of matter. Here, we present a route to realise tunable relativistic band structures based on the lateral patterning of proximity-induced spin-orbit coupling. The concept is illustrated on a patterned graphene–transition metal dichalcogenide heterostructure, where the spatially periodic spin-orbit coupling induces a rich mini-band structure featuring massless and massive Dirac bands carrying large spin Berry curvature. The envisaged systems support robust and gate-tunable spin Hall responses driven by the quantum geometry of mini-bands, which can be tailored through metasurface fabrication methods and twisting effects. These findings open pathways to two-dimensional quantum material design and low-power spintronic applications.

Phase jumps in Josephson junctions with time-dependent spin–orbit coupling

Planar Josephson junctions (JJs), based on common superconductors and III–V semiconductors, are sought for Majorana states and fault-tolerant quantum computing. However, with gate-tunable spin–orbit coupling (SOC), we show that the range of potential applications of such JJs becomes much broader. The time-dependent SOC offers unexplored mechanisms for switching JJs, accompanied by the 2π-phase jumps and the voltage pulses corresponding to the single-flux-quantum transitions, key to high-speed and low-power superconducting electronics. In a constant applied magnetic field, with Rashba and Dresselhaus SOC, anharmonic current-phase relations, calculated microscopically in these JJs, yield a nonreciprocal transport and superconducting diode effect. Together with the time-dependent SOC, this allows us to identify a switching mechanism at no applied current bias, which supports fractional-flux-quantum superconducting circuits and neuromorphic computing.

Electrostatically controlled spin polarization in Graphene-CrSBr magnetic proximity heterostructures

The magnetic proximity effect can induce a spin dependent exchange shift in the band structure of graphene. This produces a magnetization and a spin polarization of the electron/hole carriers in this material, paving the way for its use as an active component in spintronics devices. The electrostatic control of this spin polarization in graphene has however never been demonstrated so far. We show that interfacing graphene with the van der Waals antiferromagnet CrSBr results in an unconventional manifestation of the quantum Hall effect, which can be attributed to the presence of counterflowing spin-polarized edge channels originating from the spin-dependent exchange shift in graphene. We extract an exchange shift ranging from 27 – 32 meV, and show that it also produces an electrostatically tunable spin polarization of the electron/hole carriers in graphene ranging from − 50% to + 69% in the absence of a magnetic field. This proof of principle provides a starting point for the use of graphene as an electrostatically tunable source of spin current and could allow this system to generate a large magnetoresistance in gate tunable spin valve devices.

Gate-Tunable Spin Seebeck Effect and Pure Spin Current Generation in Molecular Junctions Based on Bipolar Magnetic Molecules.

Generating pure spin currents is very desirable in spintronics, as it provides a promising way to substantially reduce Joule heating and achieve ultrahigh integration density. However, to date, most spintronic devices exhibit spin currents that are accompanied by charge currents. The generation of pure spin currents on the nanoscale, particularly at the single-molecule level, remains challenging. Here, we propose that by exploiting our recently reported bipolar magnetic molecules (BMMs) as the core component of single-molecule devices, where the highest occupied molecular orbital (HOMO) and lowest unoccupied molecular orbital (LUMO) come from different spin channels, the generation of pure spin currents can be easily realized via the spin Seebeck effect (SSE) with applied temperature gradient. Moreover, the spin Seebeck coefficient can be modulated over a wide range by applying an external gate voltage. The proposal is verified through first-principles calculations on two BMM-based molecular junctions.

Gate-Tunable Spin Hall Effect in an All-Light-Element Heterostructure: Graphene with Copper Oxide

Graphene is a light material for long-distance spin transport due to its low spin-orbit coupling, which at the same time is the main drawback for exhibiting a sizable spin Hall effect. Decoration by light atoms has been predicted to enhance the spin Hall angle in graphene while retaining a long spin diffusion length. Here, we combine a light metal oxide (oxidized Cu) with graphene to induce the spin Hall effect. Its efficiency, given by the product of the spin Hall angle and the spin diffusion length, can be tuned with the Fermi level position, exhibiting a maximum (1.8 ± 0.6 nm at 100 K) around the charge neutrality point. This all-light-element heterostructure shows a larger efficiency than conventional spin Hall materials. The gate-tunable spin Hall effect is observed up to room temperature. Our experimental demonstration provides an efficient spin-to-charge conversion system free from heavy metals and compatible with large-scale fabrication.

High-efficient and gate-tunable spin transport in GaN thin film at room temperature

The emerging semiconductor spintronics has offered a practical routine for developing high-speed and energy-efficient electronic and optoelectronic devices. GaN holds broad prospects for room-temperature spintronic applications due to its weak spin scattering and moderate spin–orbit coupling. However, the development of GaN-based spintronic devices is still hindered by the relatively low spin injection efficiency and gate controllability. In this study, gate-modulated spin transport was achieved in a highly spin-polarized GaN-based non-local spin valve. A maximum spin diffusion length of 510 nm and a high spin polarization of 14.1% was obtained with the CoFeB/MgO tunnel spin injector. By applying gate voltages from −3 to +3 V, the spin-dependent magnetoresistance can be tuned in the range of 1.6–3.9 Ω. The modulation is attributed to the controllable spin relaxation of electrons by the gate electric field. This work has demonstrated high spin polarization and exceptional electric controllability in GaN, pushing forward the research in spin field-effect transistors.

Even-odd chain dependent spin valve effect on a zigzag biphenylene nanoribbon junction

The even–odd chain dependent spin valve effect was forecasted in some honeycomb graphene-like materials with zigzag edges. In this study, we confirm that the even–odd chain related spin valve phenomenon also exists in a zigzag biphenylene nanoribbon (ZBN) junction. By modeling the ZBN junction with different even and odd chains subjected to a local Rashba spin–orbit coupling (SOC) and a homogeneous magnetic field, we calculate the spin dependent conductance spectra between the source and the drain electrodes and find that the spin up (down) electron can be inhibited (allowed) to flow through the even (odd)-chain ZBN junction, which can be explained by the combined effect between the pseudo-parity conservation and magnetic field-tunable energy gap in the energy band theory. The switch on and off states of spin valve can be modulated by the most system parameters such as the Fermi energy, magnetic flux, and Rashba SOC. Furthermore, the ZBN can act as a gate-tunable spin generator and spin filter, in which we can get 100% polarized spin up (down) electrons with (no) spin-flipping from the even-chain ZBN junction, and only produce 27% polarized spin-converting electrons from the odd-chain ZBN junction. Our findings might be useful in designing future multi-parameter controllable spin valves by using the new carbon allotropes.

Tunable Spin and Orbital Edelstein Effect at (111) LaAlO3/SrTiO3 Interface.

Converting charge current into spin current is one of the main mechanisms exploited in spintronics. One prominent example is the Edelstein effect, namely, the generation of a magnetization in response to an external electric field, which can be realized in systems with lack of inversion symmetry. If a system has electrons with an orbital angular momentum character, an orbital magnetization can be generated by the applied electric field, giving rise to the so-called orbital Edelstein effect. Oxide heterostructures are the ideal platform for these effects due to the strong spin–orbit coupling and the lack of inversion symmetries. Beyond a gate-tunable spin Edelstein effect, we predict an orbital Edelstein effect an order of magnitude larger then the spin one at the (111) LaAlO/SrTiO interface for very low and high fillings. We model the material as a bilayer of orbitals using a tight-binding approach, whereas transport properties are obtained in the Boltzmann approach. We give an effective model at low filling, which explains the non-trivial behaviour of the Edelstein response, showing that the hybridization between the electronic bands crucially impacts the Edelstein susceptibility.

Modulation of spin-torque ferromagnetic resonance with a nanometer-thick platinum by ionic gating

The spin Hall effect (SHE) and inverse spin Hall effect (ISHE) have played central roles in modern condensed matter physics especially in spintronics and spin-orbitronics, and much effort has been paid to fundamental and application-oriented research towards the discovery of novel spin–orbit physics and the creation of novel spintronic devices. However, studies on gate-tunability of such spintronics devices have been limited, because most of them are made of metallic materials, where the high bulk carrier densities hinder the tuning of physical properties by gating. Here, we show an experimental demonstration of the gate-tunable spin–orbit torque in Pt/Ni80Fe20 (Py) devices by controlling the SHE using nanometer-thick Pt with low carrier densities and ionic gating. The Gilbert damping parameter of Py and the spin-memory loss at the Pt/Py interface were modulated by ionic gating to Pt, which are compelling results for the successful tuning of spin–orbit interaction in Pt.

Magnetoelastic coupling enabled tunability of magnon spin current generation in two-dimensional antiferromagnets

We theoretically investigate the magnetoelastic coupling (MEC) and its effect on magnon transport in two-dimensional antiferromagnets with a honeycomb lattice. MEC coeffcient along with magnetic exchange parameters and spring constants are computed for monolayers of transition metal trichalcogenides with N\'eel order ($\text{MnPS}_3$ and $\text{VPS}_3$) and zigzag order ($\text{CrSiTe}_3$, $\text{NiPS}_3$ and $\text{NiPSe}_3$) by $ab$ $initio$ calculations. Using these parameters, we predict that the spin-Nernst coefficient is significantly enhanced due to magnetoelastic coupling. Our study shows that although Dzyaloshinskii-Moriya interaction can produce spin Nernst effect in these materials, other mechanisms such as magnon-phonon coupling should be taken into account. We also demonstrate that the magnetic anisotropy is an important factor for control of magnon-phonon hybridization and enhancement of the Berry curvature and thus the spin-Nernst coefficient. Our results pave the way towards gate tunable spin current generation in 2D magnets by SNE via electric field modulation of MEC and anisotropy.

Rashba valleys and quantum Hall states in few-layer black arsenic.

Exciting phenomena may emerge in non-centrosymmetric two-dimensional electronic systems when spin-orbit coupling (SOC)1 interplays dynamically with Coulomb interactions2,3, band topology4,5 and external modulating forces6-8. Here we report synergetic effects between SOC and the Stark effect in centrosymmetric few-layer black arsenic, which manifest as particle-hole asymmetric Rashba valley formation and exotic quantum Hall states that are reversibly controlled by electrostatic gating. The unusual findings are rooted in the puckering square lattice of black arsenic, in which heavy 4p orbitals form a Brillouin zone-centred Γ valley with pz symmetry, coexisting with doubly degenerate D valleys of px origin near the time-reversal-invariant momenta of the X points. When a perpendicular electric field breaks the structure inversion symmetry, strong Rashba SOC is activated for the px bands, which produces spin-valley-flavoured D± valleys paired by time-reversal symmetry, whereas Rashba splitting of the Γ valley is constrained by the pz symmetry. Intriguingly, the giant Stark effect shows the same px-orbital selectiveness, collectively shifting the valence band maximum of the D± Rashba valleys to exceed the Γ Rashba top. Such an orchestrating effect allows us to realize gate-tunable Rashba valley manipulations for two-dimensional hole gases, hallmarked by unconventional even-to-odd transitions in quantum Hall states due to the formation of a flavour-dependent Landau level spectrum. For two-dimensional electron gases, the quantization of the Γ Rashba valley is characterized by peculiar density-dependent transitions in the band topology from trivial parabolic pockets to helical Dirac fermions.

Ultrafast hole spin qubit with gate-tunable spin-orbit switch functionality.

Quantum computers promise to execute complex tasks exponentially faster than any possible classical computer, and thus spur breakthroughs in quantum chemistry, material science and machine learning. However, quantum computers require fast and selective control of large numbers of individual qubits while maintaining coherence. Qubits based on hole spins in one-dimensional germanium/silicon nanostructures are predicted to experience an exceptionally strong yet electrically tunable spin-orbit interaction, which allows us to optimize qubit performance by switching between distinct modes of ultrafast manipulation, long coherence and individual addressability. Here we used millivolt gate voltage changes to tune the Rabi frequency of a hole spin qubit in a germanium/silicon nanowire from 31 to 219 MHz, its driven coherence time between 7 and 59 ns, and its Landé g-factor from 0.83 to 1.27. We thus demonstrated spin-orbit switch functionality, with on/off ratios of roughly seven, which could be further increased through improved gate design. Finally, we used this control to optimize our qubit further and approach the strong driving regime, with spin-flipping times as short as ~1 ns.

Gate-Tunable Spin xor Operation in a Silicon-Based Device at Room Temperature

Room temperature operation of a spin exclusive or (XOR) gate was demonstrated in lateral spin valve devices with nondegenerate silicon (Si) channels. The spin XOR gate is a fundamental part of the magnetic logic gate (MLG) that enables reconfigurable and nonvolatile NAND or OR operation in one device. The device for the spin XOR gate consists of three iron (Fe)/cobalt (Co)/magnesium oxide (MgO) electrodes, i.e., two input and one output electrodes. Spins are injected into the Si channel from the input electrodes whose spin angular momentum corresponds to the binary input 1 or 0. The spin drift effect is controlled by a lateral electric field in the Si channel to adjust the spin accumulation voltages under two different parallel configurations, corresponding to (1, 1) and (0, 0), so that they exhibit the same value. As a result, the spin accumulation voltage detected by the output electrode exhibits three different voltages, represented by an XOR gate. The one-dimensional spin drift-diffusion model clearly explains the obtained XOR behavior. Charge current detection of the spin XOR gate is also demonstrated. The detected charge current has a maximum of 0.94 nA, the highest value in spin XOR gates reported thus far. Furthermore, gate voltage modulation of the spin XOR gate is also demonstrated, which enables operation of multiple MLG devices.

Gate-controlled spin relaxation in bulk WSe2 flakes

We have studied the spin relaxation dynamics in both n- and p-type layered bulk WSe2 under a perpendicular electric field by employing time-resolved Kerr rotation and helicity-resolved transient reflection measurements. The experimental results reveal the efficient tuning of spin relaxation time from 3 ps to 46 ps by the external electric field at 10 K. The dependence of spin relaxation time on the external electric field is understood based on active interlayer hopping. These studies demonstrate the gate-tunable spin polarization and relaxation in bulk transition metal dichalcogenides (TMDCs), which are fundamentally important for understanding spin dynamics and the practical design of spintronic devices based on bulk TMDCs.

Gate-tunable large spin polarization in a few-layer black phosphorus-based spintronic device.

We report a first principles study of the gate tunable spin transport properties in trilayer black phosphorus (BP) placed on a Ni(100) electrode. In the proposed spintronic device, the spin-dependent conductance and the corresponding spin polarization can be largely modulated by the gate voltage. Instead of resorting to the gate tunable spin orbital interaction (SOI) mechanism in the traditional spintronic devices, the control scheme here is achieved by the giant Stark effect induced semiconducting-metallic phase transition of the few-layer BP. It is found that the quantum tunneling effect is gradually reduced as the gate voltage increases. During this process, the conductances of spin up and spin down components increase differently and hence the spin polarization is largely varied from 7% to 77% in parallel configuration (PC) and from 1% to 54% in anti-parallel configuration (APC). More importantly, the maximum magnetoresistance (MR) value can reach as large as 80%. Finally, we find that the non-equilibrium spin-polarized current can also be controlled by the external bias voltage. For instance, a large turn on/off ratio can be realized by the gate voltage (4239 for spin down current and 1809 for spin up current) when the bias voltage is fixed at 0.01 V. Our theoretical findings pave a feasible way for the novel application of few-layer BP in spintronic nanodevices.

Spin inversion in graphene spin valves by gate-tunable magnetic proximity effect at one-dimensional contacts

Graphene has remarkable opportunities for spintronics due to its high mobility and long spin diffusion length, especially when encapsulated in hexagonal boron nitride (h-BN). Here, we demonstrate gate-tunable spin transport in such encapsulated graphene-based spin valves with one-dimensional (1D) ferromagnetic edge contacts. An electrostatic backgate tunes the Fermi level of graphene to probe different energy levels of the spin-polarized density of states (DOS) of the 1D ferromagnetic contact, which interact through a magnetic proximity effect (MPE) that induces ferromagnetism in graphene. In contrast to conventional spin valves, where switching between high- and low-resistance configuration requires magnetization reversal by an applied magnetic field or a high-density spin-polarized current, we provide an alternative path with the gate-controlled spin inversion in graphene.

Gate tunable spin transport in graphene with Rashba spin-orbit coupling

Recently, it attracts much attention to study spin-resolved transport properties in graphene with Rashba spin-orbit coupling (RSOC). One remarkable finding is that Klein tunneling in single layer graphene (SLG) with RSOC (SLG + R for short below) behaves as in bi-layer graphene (BLG). Based on the effective Dirac theory, we reconsider this tunneling problem and derive the analytical solution for the transmission coefficients. Our result shows that Klein tunneling in SLG + R and BLG exhibits completely different behaviors. More importantly, we find two new transmission selection rules in SLG + R, i.e., the single band to single band (S → S) and the single band to multiple bands (S → M) transmission regimes, which strongly depend on the relative height among Fermi level, RSOC, and potential barrier. Interestingly, in the S → S transmission regime, only normally incident electrons have capacity to pass through the barrier, while in the S → M transmission regime the angle-dependent tunneling becomes very prominent. Using the transmission coefficients, we also derive spin-resolved conductance analytically, and conductance oscillation with the increasing barrier height and zero conductance gap are found in SLG + R. The present study offers new insights and opportunities for developing graphene-based spin devices.

Nonlinear Rashba spin splitting in transition metal dichalcogenide monolayers.

Single-layer transition-metal dichalcogenides (TMDs) such as MoS2 and MoSe2 exhibit unique electronic band structures ideal for hosting many exotic spin-orbital orderings. It has been widely accepted that Rashba spin splitting (RSS) is linearly proportional to the external field in heterostructure interfaces or to the potential gradient in polar materials. Surprisingly, an extraordinary nonlinear dependence of RSS is found in semiconducting TMD monolayers under a gate field. In contrast to small and constant RSS in polar materials, the potential gradient in non-polar TMDs gradually increases with the gate bias, resulting in nonlinear RSS with a Rashba coefficient an order-of-magnitude larger than the linear one. Most strikingly, under a large gate field MoSe2 demonstrates the largest anisotropic spin splitting among all known semiconductors to our knowledge. Based on the k·p model via symmetry analysis, we identify that the third-order contributions are responsible for the large nonlinear Rashba splitting. The gate tunable spin splitting found in semiconducting pristine TMD monolayers promises future spintronics applications in that spin polarized electrons can be generated by external gating in an experimentally accessible way.

ChemInform Abstract: Spin Transport and Relaxation in Graphene

AbstractReview: 120 refs.

Efficient Spin Injection and Spin Filtering in Semiconductors by Utilizing the $k^3$-Dresselhaus Spin-Orbit Effect

We numerically study the spin-dependent transmission characteristic of conduction electrons across a semiconductor-based trilayer structure with k 3-Dresselhaus spin-orbit coupling, where the Fermi level of electrons exceeds the electrostatic barrier height. Unlike previous studies which focus on the tunneling regime, the electron transmission across our structure is high, thereby ensuring that the polarization can be utilized in a practical device. The polarization is studied for two barrier materials, GaSb and InSb, which both show a considerable polarization amplitude attainable within realistic modeling values. We finally propose two interesting spintronic device concepts based on our structure and its unique polarization characteristics; a sensitive, gate-tunable spin filter and a novel spin transistor device.