High-efficient and gate-tunable spin transport in GaN thin film at room temperature

Abstract

The emerging semiconductor spintronics has offered a practical routine for developing high-speed and energy-efficient electronic and optoelectronic devices. GaN holds broad prospects for room-temperature spintronic applications due to its weak spin scattering and moderate spin–orbit coupling. However, the development of GaN-based spintronic devices is still hindered by the relatively low spin injection efficiency and gate controllability. In this study, gate-modulated spin transport was achieved in a highly spin-polarized GaN-based non-local spin valve. A maximum spin diffusion length of 510 nm and a high spin polarization of 14.1% was obtained with the CoFeB/MgO tunnel spin injector. By applying gate voltages from −3 to +3 V, the spin-dependent magnetoresistance can be tuned in the range of 1.6–3.9 Ω. The modulation is attributed to the controllable spin relaxation of electrons by the gate electric field. This work has demonstrated high spin polarization and exceptional electric controllability in GaN, pushing forward the research in spin field-effect transistors.