Gate Misalignment Research Articles

A Compact Threshold Voltage Model for Gate Misalignment Effect of DG FD SOI nMOS Devices Considering Fringing Electric Field Effects

This paper reports an analysis of gate misalignment effect on the threshold voltage of double-gate ultrathin fully depleted silicon-on-insulator nMOS devices using a compact model considering the fringing electric field effect, biased at zero-bias V/sub DS/. Using the conformal mapping transformation approach, a closed-form compact model considering the fringing electric field effect in the nongate overlap region has been derived to provide an accurate prediction of the threshold voltage behavior as verified by the two-dimensional simulation results.

Fabrication of raised S/D gate-all-around transistor and gate misalignment analysis

In this letter, we present the implementation of a new raised source/drain (S/D) gate-all-around transistor (GAT). The device is fabricated on a bulk silicon wafer using a technique known as metal-induced-lateral-crystallization (MILC). Compared to conventional single gate MOSFETs, the GAT shows a smaller subthreshold-slope (SS), reduced drain-induced barrier lowering (DIBL), and almost doubled (187%) drive current. Gate misalignment is briefly studied using this novel device. It is found that the SS, DIBL, and drive current will degrade abruptly when gate misalignment is larger than 17% of gate length.