Single crystals of TiC were grown from a gas mixture of TiCl 4, H 2, n-C 3H 8, or C 6H 6 or CCl 4 and Ar on the tips of a Ta filament heated above 1600°C. Square-pyramidal crystals of 7 mm in edge length were obtained at 1600–2000°C for 2 h. The crystal habit changed with decreasing temperature from cubic to tetradecahedral, and to arrow-like, respectively. No-deposition regions were found above 2500, 2400, and 2300°C for carbon sources of n-C 3H 8, C 6H 6 and CCl 4, respectively. The linear growth rate parallel to the 〈110〉 direction was estimated from sequential micrographs of the growing crystal and was found to attain a maximum value of 200 μ/min. The lattice constant a of TiC single crystals varied slightly with the variation of the C/Ti ratio between 0.3 to 1.5 in the input gas from 4.324 to 4.326 Å, while the microhardness of the {111} planes was measured to be 2800–3000 kg/mm 2.