Cuprous oxide (Cu<sub>2</sub>O) has the potential applications in photovoltaic and photocatalytic fields. Nitrogen-doping in Cu<sub>2</sub>O can improve the conductivity by increasing hole concentration. However, the chemical states of nitrogen in nitrogen-doped Cu<sub>2</sub>O have not been studied thoroughly.A series of nitrogen-doped Cu<sub>2</sub>O samples are prepared by increasing nitrogen flow rates and simultaneously keeping the sputtering pressure and other parameters unchanged. The samples are characterized by X-ray diffraction (XRD), step instrument, scanning electron microscope (SEM), energy dispersive spectrometer, Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), spectrophotometer and Hall effect et al. The results of Hall effect measurement show that nitrogen-doping can increase the hole concentration by one order of magnitude. The band gap width decreases with the increase of nitrogen flow rate. The nitrogen in Cu<sub>2</sub>O is in three forms: β-N (nitrogen atom), α-N<sub>2</sub>(molecular nitrogen, —N=N—)and γ-N<sub>2</sub>(molecular nitrogen, N≡N). With the increase of nitrogen gas flow rate, the peak of binding energy of β-N increases while that of α-N<sub>2</sub> decreases. The sample prepared at the nitrogen flow rate of 2.0 sccm has the minimum resistivity among all samples.