Memory conception in epitaxial ferrite-garnet films on a compensation wall has been developed in recent work.1 Further original solutions for memory element formation by heat treatment under Si layers have been found but this method has not been used in practice due to the difficulty of reproducing results. In this work the possibility of a memory matrix on the ferrite-garnet films by rf treatment has been investigated. In comparison with other work2 this memory element formation method arrived at by an MS decrease due to Ga redistribution from octahedral into tetrahedral positions provides the possibility to decrease significantly the device power intensity, to increase the speed of response, and to simplify the designing and technology. The work has been carried out with (YBi)3(FeGa)5O12 films doped by Lu, Tm, Gd, Pr, and grown by the LPE method on GGG and GGG+CaMgZr substrates. The treatment mode and film composition influence upon the element switching stable threshold has been studied and read-only memory formation parameters have been found. Experimental results of rf-treatment influence upon epitaxial layer magnetic and magneto-optic features and main display parameters (optical transmission, contrast, speed of response) have been provided. The possibility of element formation from 1 up to 20 μm with a space of 12 μm and over has been shown. Figure 1 shows memory file elements with 60 and 20 μm space between them.