GaN Nanorod Arrays Research Articles

Investigation of Enhanced Light Absorption in GaN Nanorod Arrays by Finite-Difference Time-Domain Method

Investigation of Enhanced Light Absorption in GaN Nanorod Arrays by Finite-Difference Time-Domain Method

Ordered GaN Nanorod Arrays for Self-Powered Photoelectrochemical Ultraviolet Photodetectors

Ordered GaN Nanorod Arrays for Self-Powered Photoelectrochemical Ultraviolet Photodetectors

Vertical Schottky ultraviolet photodetector based on graphene and top–down fabricated GaN nanorod arrays

GaN has been widely used in the fabrication of ultraviolet photodetectors because of its outstanding properties. In this paper, we report a graphene–GaN nanorod heterostructure photodetector with fast photoresponse in the UV range. GaN nanorods were fabricated by a combination mode of dry etching and wet etching. Furthermore, a graphene–GaN nanorod heterostructure ultraviolet detector was fabricated and its photoelectric properties were measured. The device exhibits a fast photoresponse in the UV range. The rising time and falling time of the transient response were 13 and 8 ms, respectively. A high photovoltaic responsivity up to 13.9 A/W and external quantum efficiency up to 479% were realized at the UV range. The specific detectivity D * = 1.44 × 1010 Jones was obtained at –1 V bias in ambient conditions. The spectral response was measured and the highest response was observed at the 360 nm band.

Vertical 1D/2D Heterojunction Architectures for Self-Powered Photodetection Application: GaN Nanorods Grown on Transition Metal Dichalcogenides.

Van der Waals (vdW) heterojunctions based on two-dimensional (2D) transition metal dichalcogenide (TMD) materials have attracted the attention of researchers to conduct fundamental investigations on emerging physical phenomena and expanding diverse nano-optoelectronic devices. Herein, the quasi-van der Waals epitaxial (QvdWE) growth of vertically aligned one-dimensional (1D) GaN nanorod arrays (NRAs) on TMDs/Si substrates is reported, and their vdW heterojunctions in the applications of high-performance self-powered photodetection are demonstrated accordingly. Such 1D/2D hybrid systems fully combine the advantages of the strong light absorption of 1D GaN nanoarrays and the excellent electrical properties of 2D TMD materials, boosting the photogenerated current density, which demonstrates a light on/off ratio above 105. The device exhibits a competitive photovoltaic photoresponsivity over 10 A W-1 under a weak detectable light signal without any external bias, which is attributed to the efficient photogenerated charge separation under the strong built-in potential from the type-II band alignment of GaN NRAs/TMDs. This work presents a QvdWE route to prepare 1D/2D heterostructures for the fabrication of self-powered photodetectors, which shows promising potentials for practical applications of space communications, sensing networks, and environmental monitoring.

Fabrication and repair of GaN nanorods by plasma etching with self-assembled nickel nanomasks

High crystal quality GaN nanorod arrays were fabricated by inductively coupled plasma (ICP) etching using self-organized nickel (Ni) nano-islands mask on GaN film and subsequent repaired process including annealing in ammonia and KOH etching. The Ni nano-islands have been formed by rapid thermal annealing, whose density, shape, and dimensions were regulated by annealing temperature and Ni layer thickness. The structural and optical properties of the nanorods obtained from GaN epitaxial layers were comparatively studied by high-resolution X-ray diffraction (HRXRD), Raman spectroscopy and photoluminescence (PL). The results indicate that damage induced by plasma can be successfully healed by annealing in NH3 at 900 °C. The average diameter of the as-etched nanorod was effectively reduced and the plasma etch damage was removed after a wet treatment process in a KOH solution. It was found that the diameter of the GaN nanorod was continuously reduced and the PL intensity first increased, then reduced and finally increased as the KOH etching time sequentially increased.

Optical design of InGaN/GaN nanoLED arrays on a chip: toward: highly resolved illumination

The physical laws of diffraction limit the spatial resolution of optical systems. In contrary to most superresolution microscopy approaches used today, in our novel idea we are aiming to overcome this limit by developing a spatially resolved illumination source based on semiconductor nanoscale light emitting diode (nanoLED) arrays with individual pixel control. We present and discuss the results of optical simulations performed for such nanoLED emitter arrays and analyze the theoretical limits of this approach. As possible designs we study arrays of GaN nanofins and nanorods (obtained by etching nanofin arrays), with InGaN/GaN multi quantum wells embedded as active regions. We find that a suitable choice of the array dimensions leads to a reasonably directed light output and concentration of the optical power in the near field around an activated pixel. As a consequence, the spatial resolution for this type of microscopy should only be limited by the pixel pitch, and no longer by the optical diffraction. Realization of optimized nanoLED arrays has a potential to open new field of chip based superresolution microscopy, making super-high spatial resolution ubiquitously available.

Modulated 3D light absorption profile in GaN nanorod arrays

The depth dependent UV-light absorption profile of GaN nanorods with different lattice arrays and filling factors was studied using finite-difference time-domain (FDTD) methods. By comparing to the results from Lambert-Beer's law with Maxwell-Garnett effective medium theory, we identified the quantitative contribution from nano-scattering effect on the light absorption in the nanorod arrays. The FDTD study of graphical 3D profile of light absorption and electric field intensity was parallelly conducted to investigate the origin of the nano-scattering. We found that the coupled electric field in the gap regions led to the larger absorption cross-section of the nanorod arrays, which is attributed to the distorted depth profile of the light absorption.

Theoretical study on2Dphotoelectric emission ofGaNnanorod array and nanocone array photocathode

Theoretical study on<scp>2D</scp>photoelectric emission of<scp>GaN</scp>nanorod array and nanocone array photocathode

Vertically aligned GaN nanorod arrays/p-Si heterojunction self-powered UV photodetector with ultrahigh photoresponsivity.

Self-powered photodetectors have demonstrated potential for developing future wireless and implantable devices. Herein, we present a self-powered UV photodetector with an ultrahigh photoresponse based on vertically oriented and high crystalline quality n-type GaN nanorod arrays: poly(methyl methacrylate)/p-Si heterojunction. Benefiting from the highly efficient separation and transport of photoexcited electron-hole pairs, significant improvements in photoresponsivity are experimentally obtained. In a zero-biased self-powered detection mode, a 6.7AW-1 responsivity and 2.68×1013 Jones detectivity are achieved under 355 nm light illumination, and the response time is as low as 0.29/3.07 ms (rise/fall times).

High-Selectivity Growth of GaN Nanorod Arrays by Liquid-Target Magnetron Sputter Epitaxy

Selective-area grown, catalyst-free GaN nanorod (NR) arrays grown on Si substrates have been realized using liquid-target reactive magnetron sputter epitaxy (MSE). Focused ion beam lithography (FIBL) was applied to pattern Si substrates with TiNx masks. A liquid Ga target was sputtered in a mixture gas of Ar and N2, ranging the N2 partial pressure (PN₂) ratio from 100% to 50%. The growth of NRs shows a strong correlation with PN₂ on the selectivity, coalescence, and growth rate of NRs in both radial and axial directions. The growth rate of NRs formed inside the nanoholes increases monotonically with PN₂. The PN₂ ratio between 80% and 90% was found to render both a high growth rate and high selectivity. When the PN₂ ratio was below 80%, multiple NRs were formed in the nanoholes. For a PN₂ ratio higher than 90%, parasitic NRs were grown on the mask. An observed dependence of growth behavior upon the PN₂ ratio is attributed to a change in the effective Ga/N ratio on the substrate surface, as an effect of impinging reactive species, surface diffusivity, and residence time of adatoms. The mechanism of NR growth control was further investigated by studying the effect of nanoholes array pitch and growth temperature. The surface diffusion and the direct impingement of adatoms were found to be the dominant factors affecting the lateral and axial growth rates of NR, respectively, which were well elucidated by the collection area model.

A Self‐Powered High‐Performance UV Photodetector Based on Core–Shell GaN/MoO3–x Nanorod Array Heterojunction

AbstractSelf‐powered UV photodetectors are highly desirable for applications in space communications and environmental monitoring. However, most self‐powered UV photodetectors exhibit unimpressive performance in weak signal detection. Herein, a self‐powered UV photodetector based on the core–shell GaN/MoO3–x nanorod array (NRA) heterojunction system is demonstrated. Homogeneous MoO3–x layers are deposited on GaN NRAs by a simple one‐step physical vapor deposition method. The photodetector device shows an ultrahigh specific detectivity of 2.7 × 1015 Jones at 355 nm without any power supply. Further analyses reveal a responsivity of 160 A W−1 and a high UV–vis rejection ratio (R355 nm/R400 nm) of 2.0 × 104 under zero bias. The self‐powered device also has a fast response speed with a rise/fall time of 73/90 µs. As a result, the self‐powered photodetector, featuring ultrahigh detectivity and responsivity along with fast response, exhibits great potential for applications in next‐generation UV detection. The core–shell NRA structure heterojunction design provides a valuable direction for realizing nanoscale self‐powered UV photodetectors.

Efficient light trapping in GaN inclined nanorod and nanohole arrays for photocathode applications

In this paper, COMSOL Multiphysics commercial software package based on the finite element method is used to design simulation models of GaN nanorod and nanohole arrays. The absorption differences of two types of nanostructure arrays in the ultraviolet band were studied. The influence of geometric parameters on the optical absorption properties of GaN nanostructure arrays were analyzed. The inclination of the nanostructure was changed to study the variation of the absorption performance of the inclined nanostructure arrays. Studies have shown that vertical nanohole arrays with a hexagonal arrangement are more likely to obtain high absorption, and inclined nanostructures can further improve the ability of light trapping. The simulation experiments of GaN nanorod and nanohole arrays provide some references for the structural design of photocathodes, which will help UV detectors obtain efficient light absorption.

Surface‐Polarity‐Induced Spatial Charge Separation Boosts Photocatalytic Overall Water Splitting on GaN Nanorod Arrays

AbstractPhotocatalytic overall water splitting has been recognized as a promising approach to convert solar energy into hydrogen. However, most of the photocatalysts suffer from low efficiencies mainly because of poor charge separation. Herein, taking a model semiconductor gallium nitride (GaN) as an example, we uncovered that photogenerated electrons and holes can be spatially separated to the nonpolar and polar surfaces of GaN nanorod arrays, which is presumably ascribed to the different surface band bending induced by the surface polarity. The photogenerated charge separation efficiency of GaN can be enhanced significantly from about 8 % to more than 80 % via co‐exposing polar and nonpolar surfaces. Furthermore, spatially assembling reduction and oxidation cocatalysts on the nonpolar and polar surfaces remarkably boosts photocatalytic overall water splitting, with the quantum efficiency increased from 0.9 % for the film photocatalyst to 6.9 % for the nanorod arrays photocatalyst.

Direct growth of self-aligned single-crystalline GaN nanorod array on flexible Ta foil for photocatalytic solar water-splitting

We report the direct growth of self-aligned single crystalline GaN nanorod array on flexible Ta metal foil using laser molecular beam epitaxy. Scanning electron microscopy reveals the vertically aligned nanorods on Ta surface having diameters in the range of 60–80 nm. The nanorods show well-defined hexagonal facets and are quite uniformly distributed across the metal foil. Transmission electron microscopy shows single crystalline nature of the individual rods having c-axis oriented growth with wurtzite structure. Room temperature photoluminescence study exhibits a sharp, intense band-to-band emission without any deep-level bands indicating the excellent optical quality of the GaN nanorod array. X-ray photoemission spectroscopy to elucidate the electronic structure of the nanorods confirms Ga–N bonding and the calculated chemical composition turns out to be slightly Ga rich. Location of valence band maxima also suggests the n-type character of GaN nanorods. The photoelectrochemical water-splitting behaviour of the self-aligned GaN nanorod arrays on Ta foil has been investigated using 1 M oxalic acid as the electrolyte with AM 1.5 G simulated solar radiation under 1 Sun (100 mW/cm2) conditions. The results demonstrate an effective way of fabricating well-aligned GaN nanorods on flexible metal foils for developing simple, relatively inexpensive, and flexible photo-electrodes for photocatalytic solar water-splitting applications.

Site-Controlled Growth of GaN Nanorods with Inserted InGaN Quantum Wells on μ-Cone Patterned Sapphire Substrates by Plasma-Assisted MBE

We report on a new approach to fabricate regular arrays of GaN nanorods (NRs) with InGaN QWs by plasma-assisted molecular-beam epitaxy (PA MBE) on micro-cone patterned sapphire substrates (μ-CPSSs). A two-stage PA MBE fabrication process of GaN NRs has been developed, starting with a high temperature nucleation layer growth at metal-rich conditions to aggregate selectively GaN nucleus on c-oriented areas of the μ-CPSSs and followed by growth of 1-μm-thick GaN NRs at strongly nitrogen-rich conditions exactly on the cone tips. These results are explained by energetically favorable GaN growth on the (000-) oriented sapphire surface. Both micro-photoluminescence and micro-cathodoluminescence confirm the formation of regular array of optically and spectrally isolated NRs without usage of any nanolithography.

Site-controlled growth of GaN nanorod arrays by magnetron sputter epitaxy

Catalyst-free GaN nanorod regular arrays have been realized by reactive magnetron sputter epitaxy. Two nanolithographic methods, nanosphere lithography (NSL) and focused ion beam lithography (FIBL), were applied to pattern Si substrates with TiNx masks. The growth temperature was optimized for achieving selectivity and well-faceted nanorods grown onto the NSL-patterned substrates. With increasing temperature from 875 to 985 °C, we observe different growth behaviors and associate them with selective insensitive, diffusion-dominated, and desorption-dominated zones. To further achieve site-specific and diameter control, these growth parameters were transferred onto FIBL-patterned substrates. Further investigation into the FIBL process through tailoring of milling current and time in combination with varying nanorod growth temperature, suggests that minimization of mask and substrate damage is the key to attain uniform, well-defined, single, and straight nanorods. Destruction of the mask results in selective area growth failure, while damage of the substrate surface promotes inclined nanorods grown into the openings, owning to random oriented nucleation.

Site-controlled growth of GaN nanorods with inserted InGaN quantum wells on mu-cone patterned sapphire substrates by plasma-assisted MBE

AbstractWe report on a new approach to fabricate regular arrays of GaN nanorods (NRs) with InGaN QWs by plasma-assisted molecular-beam epitaxy (PA MBE) on micro-cone patterned sapphire substrates (μ-CPSSs). A two-stage PA MBE fabrication process of GaN NRs has been developed, starting with a high temperature nucleation layer growth at metal-rich conditions to aggregate selectively GaN nucleus on c-oriented areas of the μ-CPSSs and followed by growth of 1-μm-thick GaN NRs at strongly nitrogen-rich conditions exactly on the cone tips. These results are explained by energetically favorable GaN growth on the (000-) oriented sapphire surface. Both micro-photoluminescence and micro-cathodoluminescence confirm the formation of regular array of optically and spectrally isolated NRs without usage of any nanolithography.

GaN nanorod arrays as a high-stability field emitter

Patterned arrays of epitaxial GaN (0001) nanorods by Si-ion bombardment of Si (111) substrates have been fabricated for the field emitters. The field emission characteristics of the GaN nanorod arrays were measured; both GaN nanorods on self-implanted and GaN matrix on unimplanted Si substrates. The current densities as high as 10 mA/cm2 have been observed for GaN nanorod arrays under applied electrical field of about 70 V/μm, while the stability of field emission at 3.93 mA/cm2 has been tested up to 7 hours with the standard deviation of 0.2%.

Selective‐area growth of doped GaN nanorods by pulsed‐mode MOCVD: Effect of Si and Mg dopants

Injecting current with a uniform carrier concentration is important for applications with three‐dimensional architectures such as vertical power devices or displays. In III‐nitride nanostructures, dopants not only incorporate differently depending on the surface orientation but can also seriously affect the kinetic equilibrium shapes of the nanorods. Herein, we report selective‐area growth of doped GaN nanorods grown by pulsed‐mode metalorganic chemical vapor deposition. Two dopants, Si and Mg, were employed as donor and acceptor atoms, respectively, for a mono‐doping approach. Furthermore, a mixed flow of Si and Mg was supplied for a co‐doping approach. We compared the morphological effects and growth rates of each doped GaN nanorod array. Then, we proposed appropriate growth mechanisms for the doped GaN nanorods on the basis of our structural characterizations. These results might extend the morphological functionality of GaN nanorods by including doping and may also provide an appropriate foundation for the design of nanostructure‐based electronic or photonic devices.

Strain at Coalescence of Patterned (Al)GaN Nanorod Arrays Formed by Selective Area Growth for Optoelectronic Devices

Strain at Coalescence of Patterned (Al)GaN Nanorod Arrays Formed by Selective Area Growth for Optoelectronic Devices