GaN HEMT Research Articles

Evaluation of a 1200 V Polarization Super Junction GaN Field-Effect Transistor in Cascode Configuration

GaN HEMTs based on polarization super junction (PSJ) technology offer significant improvements in efficiency and power density over conventional silicon (Si) devices due to their excellent material characteristics, which enable fast switching edges and lower specific on-resistance. However, due to the presence of an uninterrupted channel between drain and source at zero gate bias, these devices have normally-on characteristics. In this paper, the performance of a 1200 V GaN FET utilizing PSJ technology in cascode configuration is reported. The device working principle, characteristics, and switching behavior are experimentally demonstrated. The results show that cascoded GaN FETs utilizing the PSJ concept are highly promising for power device applications.

High-voltage GaN HEMT with self-biased P-GaN VLD layer for improved breakdown voltage and figure of merit

High-voltage GaN HEMT with self-biased P-GaN VLD layer for improved breakdown voltage and figure of merit

Sheaf Attention–Based Osprey Spiking Neural Network for Effective Thermal Management and Self‐Heating Mitigation in GaAs and GaN HEMTs

Sheaf Attention–Based Osprey Spiking Neural Network for Effective Thermal Management and Self‐Heating Mitigation in GaAs and GaN HEMTs

TCAD analysis of single-event burnout caused by heavy ions for a GaN HEMT

TCAD analysis of single-event burnout caused by heavy ions for a GaN HEMT

Model of AlGaN/GaN based on High Electron Mobility Transistors using SILVACO ATLAS™

Since the introduction of semiconductors, the world has undergone numerous profound transformations during the past few decades. With advancements in technology, semiconductor products' performance requirements keep rising. Research on novel materials and device structures is required to meet the criteria. This research presents a novel GaN HEMT construction. The components of an AlGaN/GaN heterojunction HEMT are the drain, source and gate electrode. Since M. Asif Khan and his colleagues published the first AlGaN/GaN HEMT in 1993, a lot of HEMT structures have been reported by researchers; nevertheless, none of them contain three electrodes on distinct sides of the device. In this study, we constructed a 2DEG GaN HEMT and observed its features, including its drain current characteristics curves, Ion/Ioff ratio, and transconductance characteristics curves. Which were acquired from simulations carried out with Silvaco ATLAS™.

Advanced measurement methods for high-power gallium nitride high electron mobility transistors.

The testing and modeling of semiconductor devices are the foundation of circuit design. The issue of high-power device testing urgently needs to be solved as the power level of the devices under test (DUTs) increases. This work proposes advanced measurement methods based on three aspects of "measuring capability, security, and stability" with a focus on the features of high output power, easy self-oscillation in mismatch tests, and safety risk in the measurement system of high-power transistors. In this paper, the wideband limiter and bias filter network are innovatively introduced to improve the stability and security of the measurement circuit. Meanwhile, the output signal of the DUT is suggested to be measured using a spectrum analyzer before the test to avoid damage to the circuit caused by the possible self-oscillation of the transistor. Moreover, an efficient test system of current parameters and S-parameters is developed, with coaxial fixtures offered to boost the test power capacity and cascade bridges adapted to satisfy the pulse operating conditions. Finally, based on the improved test methods, a gallium nitride high electron mobility transistor (GaN HEMT) with a gate width of 400 × 32μm and a power density of roughly 10 W/mm was tested. A relatively complete I-V curve and a S-parameter curve were obtained, demonstrating the effectiveness and applicability of the improved methods.

An Accurate Electrical and Thermal Co-Simulation Framework for Modeling High-Temperature DC and Pulsed I-V Characteristics of GaN HEMTs

An Accurate Electrical and Thermal Co-Simulation Framework for Modeling High-Temperature DC and Pulsed I-V Characteristics of GaN HEMTs

Enhanced cooling model for GaN HEMT based on thermoelectric cooler

Enhanced cooling model for GaN HEMT based on thermoelectric cooler

Analytical Modeling of Fault Transient in a GaN HEMT Half Bridge and Its Overcurrent Protection With PCB Embedded Rogowski Coils

Analytical Modeling of Fault Transient in a GaN HEMT Half Bridge and Its Overcurrent Protection With PCB Embedded Rogowski Coils

A 8 GHz microwave substrate integrated waveguide power amplifier using complementary split ring resonators

This paper introduces a design for a microwave substrate integrated waveguide (SIW) power amplifier (PA) for modern wireless communications. The amplifier design incorporates complementary split ring resonator (CSRR) structures integrated within the SIW to achieve low-loss characteristics and miniaturization through a below cut-off frequency operation approach. The designed PA operates at 8 GHz and exhibits good performance, which are measured output power Pout of 35.51 dBm, a maximum power added efficiency PAE of 47.2% and a power gain of 12.51 dB. The final circuit occupies just a compact size of 41 x 15.7 mm2 benefiting from using the CSRR structure. The proposed PA employs a low-cost QFN packaged GaN HEMT device from Qorvo and it was designed and fabricated on a cost-effective RO4003C substrate. The simulated results agree well with the measured ones validating the accuracy of the design. With promising measured results, the proposed PA can be a potential candidate for using in the modern wireless communication systems.

Fast and Accurate Temperature-Dependent DC Model for GaN HEMT Devices

Fast and Accurate Temperature-Dependent DC Model for GaN HEMT Devices

3 kV monolithic bidirectional GaN HEMT on sapphire

Abstract 3-kV breakdown voltage was demonstrated in monolithic bidirectional GaN HEMTs having potential applications in 1200V or 1700V-class power converters. The on-resistance of the fabricated transistors was ~20 Ω.mm (~11 mΩ.cm2). The breakdown voltage was optimized with two field plates on either side of the transistor. Shorter first field plate lengths (≤ 2μm) resulted in higher breakdown voltage and the possible reason was discussed. The transistors had a steep subthreshold swing of 92 mV/ dec. The fabricated transistor was benchmarked against the state-of-the-art monolithic bidirectional GaN HEMTs in the performance matrices of breakdown voltage – on resistance, that showed crucial progress.

Characterization of Drain-Induced Barrier Lowering in GaN HEMTs Using a Drain Current Injection Technique

Characterization of Drain-Induced Barrier Lowering in GaN HEMTs Using a Drain Current Injection Technique

A Hybrid GaN HEMT Model Merging Artificial Neural Networks and ASM-HEMT for Parameter Precision and Scalability

A Hybrid GaN HEMT Model Merging Artificial Neural Networks and ASM-HEMT for Parameter Precision and Scalability

Reverse Gate Leakage Induced Buffer Charging and Threshold Voltage Shift of GaN HEMTs

Reverse Gate Leakage Induced Buffer Charging and Threshold Voltage Shift of GaN HEMTs

Scalable Large-Signal Modeling for GaN HEMTs Including Kink Effect

Scalable Large-Signal Modeling for GaN HEMTs Including Kink Effect

Switching Loss Model for Fast-Switching GaN HEMT in Half-Bridge Circuit Considering Parasitic Inductance and Temperature Effect

Switching Loss Model for Fast-Switching GaN HEMT in Half-Bridge Circuit Considering Parasitic Inductance and Temperature Effect

Accurate Modeling of GaN HEMTs and MMICs for Cryogenic Electronics Applications Utilizing Artificial Neural Network

Accurate Modeling of GaN HEMTs and MMICs for Cryogenic Electronics Applications Utilizing Artificial Neural Network

Gate Switching Lifetime of P-Gate GaN HEMT: Circuit Characterization and Generalized Model

Gate Switching Lifetime of P-Gate GaN HEMT: Circuit Characterization and Generalized Model

Numerical Modeling of Dynamic Thermal Coupling in GaN HEMTs Calibrated by Transient Measurements

Numerical Modeling of Dynamic Thermal Coupling in GaN HEMTs Calibrated by Transient Measurements