GaN-based Vertical-cavity Surface-emitting Lasers Research Articles

Characteristic Temperature Estimation for GaN-Based Lasers

AbstractWe have estimated the characteristic temperature T0 of GaN-based vertical-cavity surface-emitting lasers. The density matrix theory including intraband relaxation broadening has been taken into account. The estimated T0 is about 300 K, which suggests a good temperature characteristic in GaN-based lasers.

Design Consideration of GaN-Based Surface Emitting Lasers

ABSTRACTThe threshold current density of GaN-based vertical cavity surface emitting lasers (VCSELs) has been estimated. It is clarified that the introduction of a quantum well structure as an active layer is very effective for a low threshold operation and that high reflective mirrors are required for low threshold GaN-based VCSELs. Also, attempts on micro-fabrication process of GaN is presented.