GaN-based Metal Research Articles

GaN 2DEG Varactor-Based Impulse Suppression Module for Protection Against Malicious Electromagnetic Interference

A GaN-based metal–semiconductor–metal varactor with a two-dimensional electron gas (2DEG) layer is proposed and fabricated. The capacitance variation of this fabricated varactor biased at different external voltages is studied and measured, and the frequency-dependent capacitance and resistance of the varactor are simulated by a corresponding empirical formula. A high-frequency protective filter is further constructed and placed under a large pulsed-current injection in a malicious electromagnetic interference immunity test. The results show that the proposed GaN-based module can reduce the large pulsed current to an acceptably small level. Thus, the GaN-based 2DEG varactor is an attractive candidate for applications designed to protect the upcoming 5G high-frequency system from risks such as electrostatic discharge, lightning, and electromagnetic pulses.

A GaN enhancement-mode reverse blocking MISHEMT with MIS field-effect drain for bidirectional switch

In this work, a novel GaN-based reverse blocking metal–insulator–semiconductor high electron mobility transistor (RB-MISHEMT) with enhancement mode (E-mode) is investigated by the TCAD simulation. To enable the device with capability of blocking reverse current, a MIS field-effect drain consisting of electrically shorted ohmic and recessed MIS structure is adopted. The proposed GaN E-mode RB-MISHEMT features a low reverse current of 10 $$\upmu $$ A at − 900 V and a low turn-on voltage of drain electrode of 0.38 V at 10 mA. On-state power loss of the bidirectional switch based on proposed GaN E-mode RB-MISHEMT shows a 34% reduction compared with that of the bidirectional switch based on GaN E-mode reverse conducting MISHEMT. And the proposed E-mode RB-MISHEMT is also compatible with standard E-mode MISHEMT. The high performance and processing compatibility of the proposed GaN RB-MISHEMT show that the device is promising for future power applications.