Abstract
A GaN-based metal–semiconductor–metal varactor with a two-dimensional electron gas (2DEG) layer is proposed and fabricated. The capacitance variation of this fabricated varactor biased at different external voltages is studied and measured, and the frequency-dependent capacitance and resistance of the varactor are simulated by a corresponding empirical formula. A high-frequency protective filter is further constructed and placed under a large pulsed-current injection in a malicious electromagnetic interference immunity test. The results show that the proposed GaN-based module can reduce the large pulsed current to an acceptably small level. Thus, the GaN-based 2DEG varactor is an attractive candidate for applications designed to protect the upcoming 5G high-frequency system from risks such as electrostatic discharge, lightning, and electromagnetic pulses.
Highlights
The prevalence of electric vehicles and high-speed cellular phones in modern society is increasing
Systems, which must have precise working properties, from conventional natural or man-made threats,[1,2,3,4,5] current protection technologies are used. These technologies can be largely classified into three categories: gas discharge tubes (GDTs),[6,7] metal oxide varistors (MOVs),[8,9,10] and transient voltage suppression (TVS) diodes.[11]
All of the values of fabricated GaN 27Ga0.73N/GaN heterojunction possesses a twodimensional electron gas (2DEG) varactors are below 4 pF for frequencies from 1 GHz to 3 GHz
Summary
The prevalence of electric vehicles and high-speed cellular phones in modern society is increasing. We describe the structure of the fabricated GaN 2DEG MSM varactor and its measured low-frequency capacitance under an external bias voltage.
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