Gallium Precursor Research Articles

Thermal atomic layer deposition of Ga2O3 films using trimethylgallium and H2O

The Atomic Layer Deposition (ALD) technique is regarded as an effective method for fabricating high-quality Ga2O3 thin films. Trimethyl gallium (TMG), with its high vapor pressure at room temperature (227 Torr), is widely utilized as a gallium precursor in this technique. For oxygen precursors, common choices include O3 and O2 plasma. However, the impact of H2O as an oxygen precursor on Ga2O3 thin films during Thermal Atomic Layer Deposition (TALD) remains insufficiently explored. This study investigates the temperature window and growth characteristics of Ga2O3 thin films, deposited using TMG and H2O as precursors, on sapphire substrates within the temperature range of 250–500 °C. At 250 °C, deposited Ga2O3 films exhibit an amorphous structure, whereas within the 300–500 °C substrate temperature range, they transition to the α-phase. The half-peak width (FWHM) narrows as the temperature increases, with characteristic peaks of the (0006) facets shifting to higher angles at 500 °C. STEM analysis reveals complete coherence between α-Ga2O3 films and the sapphire substrate, indicating a pseudo-crystalline structure formation. The growth rate of the films at 450 °C is 0.083 Å/cycle. Ga2O3 films prepared with H2O as the oxygen precursor exhibit Ga-rich properties, with (Ga + Al)/O atomic ratios between 0.88 and 0.91 across the 250–500 °C temperature range. The films’ roughness (Ra) ranges from 0.453 to 0.646 nm. Island-like particles form on the film surface within the 400–500 °C range, smoothing out as the temperature rises. The film’s band gap peaks at 5.50 eV at 450 °C. The reaction of TMG with H2O on sapphire substrates yields Ga2O3 films and CH4 by-products, akin to the trimethylaluminum process.

200 cm2/Vs electron mobility and controlled low 1015 cm−3 Si doping in (010) β -Ga2O3 epitaxial drift layers

We report on metalorganic chemical vapor deposition (MOCVD) growth of controllably Si-doped 4.5 μm thick β-Ga2O3 films with electron concentrations in the 1015 cm−3 range and record-high room temperature Hall electron mobilities of up to 200 cm2/Vs, reaching the predicted theoretical maximum room temperature phonon scattering-limited mobility value for β-Ga2O3. Growth of the homoepitaxial films was performed on Fe-doped (010) β-Ga2O3 substrates at a growth rate of 1.9 μm/h using TEGa as the Gallium precursor. To probe the background electron concentration, an unintentionally doped film was grown with a Hall concentration of 3.43 × 1015 cm−3 and Hall mobility of 196 cm2/Vs. Growth of intentionally Si-doped films was accomplished by fixing all growth conditions and varying only the silane flow, with controllable Hall electron concentrations ranging from 4.38 × 1015 to 8.30 × 1015 cm−3 and exceptional Hall mobilities ranging from 194 to 200 cm2/Vs demonstrated. C-V measurements showed a flat charge profile with the ND+–NA− values correlating well with the Hall-measured electron concentration in the films. SIMS measurements showed the silicon atomic concentration matched the Hall electron concentration with carbon and hydrogen below detection limit in the films. The Hall, C-V, and SIMS data indicate the growth of high-quality 4.5 μm thick β-Ga2O3 films and controllable doping into the mid 1015 cm−3 range. These results demonstrate MOCVD growth of electronics grade record-high mobility, low carrier density, and thick β-Ga2O3 drift layers for next-generation vertical β-Ga2O3 power devices.

Effect of Ga/Al ratio on the luminescent properties of inorganic scintillating GGAG:(4 mol%)Ce ceramic powder

Gadolinium gallium aluminum garnet doped with cerium (GGAG:Ce), a promising ceramic scintillator material, is being excessively explored for its high quality optical properties by the bandgap engineering with different Ga/Al ratio. In this study, GGAG:Ce powders were synthesized using a solvothermal method and sintered at 1300 °C to investigate the impact of the gallium-to-aluminum (Ga/Al) ratio on optical characteristics. The results revealed that a decrease in the Ga/Al ratio led to a decrease in particle size. This observation can be attributed to the different reactivity and growth kinetics of gallium and aluminum precursors during the solvothermal process. Perturbations from the optimized Ga/Al ratio of 1.5–1.77 and 1.27 resulted in substantially enhanced photoluminescence (PL) and radioluminescence (RL) spectra intensities. PL lifetime measurements of various Ga/Al ratio exhibit average PL lifetime between 48 and 57 ns. Specifically, the deviations to 1.77 and 1.27 ratios yielded approximately 125 % and 106 %, respectively, in observed luminescent measurements compared to other ratios. This enhancement in PL and RL intensity suggests that the Ga/Al ratio plays a critical role in modulating the optical properties of GGAG:Ce ceramic powders. The results of this study also highlight the importance of the Ga/Al ratio in tailoring the optical or luminescence characteristics of GGAG:Ce powders.

Deposition Kinetics and Characteristics of Peald Igzo Films Using Tetrahydrofuran-Adducted in & Ga Precursors

As the down-scaling of semiconductor materials, silicon compatible emerging materials have extensively researched for next generation display and 3D structured devices. In particular, oxide semiconductors are considered a promising candidate for backplane applications in display. Among them, indium-gallium-zinc oxide (IGZO) using plasma enhanced atomic layer deposition (PEALD) has excellent properties, like high mobility, low leakage current, high transparecy and low temperature processablility. However, conventional precursors for IGZO still have some prolems to solve such as low deposition rate, low thermal stability and high price. In this study, we developed indium precursor (Trimethylindium Tetrahydrofuran, DIP-4) and gallium precursor (Trimethylgallium Tetrahydrofuran, DGP-2) to overcome the shortcomings of the conventional In & Ga precursors. ALD characteristics of the films deposited using the newly developed the precursors were confirmed through the source feeding time saturation and linearity. Furthermore, the incubation time of In, Ga and Zn oxide films according to the different bottom layer was respectively verified and calculated using the developed DIP-4, DGP-2 and commercially used DEZn. In order form a multilayer IGZO thin film, application of the incubation factors at IGZO process were experimentally demonstrated. Thickness of the IGZO films can be easily controlled through modulation of the incubation factors. The physical and chemical properties of the films were analyzed by X-ray diffraction, X-ray reflectrometer, X-ray photoelectron spectroscopy, transmission electron microscope. Figure 1

(Invited) Electrodeposition of In and Ga from Non-Aqueous Electrolytes

Indium and gallium are metals whose applications have increased during the last decades. Both metals are primarily used in the form of binary, tertiary or quaternary (semi)conductor compounds in integrated circuits, photovoltaics, liquid crystal display devices, lasers and light-emitting diodes.In the past, the electrodeposition of indium and gallium has been investigated from both aqueous and non-aqueous electrolytes. Due to the negative standard reduction potentials of the two metals (E°In(III)/In(0) = −0.34 V and E°Ga(III)/Ga(0) = −0.53 V), their electrodeposition from aqueous electrolytes is hampered. This is especially true for gallium. In this talk, the electrodeposition of indium and gallium was investigated from several organic solvents. The investigated electrolytes are 1,2-dimethoxyethane (DME), polyethylene glycol (PEG), dimethyl sulfoxide (DMSO), and acetonitrile, containing chloride, bistriflimide, or methanesulfonate-based indium or gallium precursors.The electrochemistry and the electrodeposition of indium and gallium was studied using various electrochemical methods in combination with quartz crystal microbalance (QCM) and rotating (ring) disk electrodes. DMSO-based electrolytes enabled the electrodeposition of indium at room temperature and above its melting point (159.6 °C), while DME electrolytes gave rise to gallium electrodeposits composed of small liquid gallium spheres (Fig 1). In all the investigated electrolytes, the formation of intermediate monovalent indium(I) or gallium(I) species during reduction and oxidation was demonstrated. These species are unstable and react away via disproportionation reactions. Yet, it was found that the extent of their formation and their stability depends on the nature of the electrolyte. In addition, the electrodeposition of indium antimonide (InSb) films and eutectic gallium indium (EGaIn) liquid metal lines and patterns will be discussed, as well as the electrochemical synthesis of spherical indium nanoparticles.

Development of MOVPE grown GaSb-on-GaAs interfacial misfit solar cells

GaSb grown on GaAs through interfacial misfit (IMF) arrays grown via molecular beam epitaxy has been heavily studied; there is limited research, however, on IMF growth through metal-organic vapor phase epitaxy. To demonstrate viability for integration in a multijunction solar cell for terrestrial use, it is imperative to demonstrate high quality GaSb grown on GaAs through metal-organic vapor phase epitaxy. The preferred gallium precursors for n-type and p-type GaSb for longest minority carrier diffusion length were determined to be trimethylgallium and triethylgallium, respectively. A heteroepitaxial GaSb-on-GaAs device attained an open-circuit voltage of 190 mV and an efficiency of 2.2%. Extracted threading dislocation density from the minority carrier lifetime for the heteroepitaxial GaSb-on-GaAs device was determined to be 7.5×106cm−2. In a modeled multijunction solar cell, this device attributes to an overall efficiency of 33.1% under AM1.5g illumination.

Heteroepitaxial growth of Ga2O3 on 4H-SiC by liquid-injection MOCVD for improved thermal management of Ga2O3 power devices

We report on the growth of monoclinic β- and orthorhombic κ-phase Ga2O3 thin films using liquid-injection metal-organic chemical vapor deposition on highly thermally conductive 4H-SiC substrates using gallium (III) acetylacetonate or tris(2,2,6,6-tetramethyl-3,5-heptanedionato) gallium (III). Both gallium precursors produced the β phase, while only the use of the latter led to growth of κ-Ga2O3. Regardless of the used precursor, best results for β-Ga2O3 were achieved at a growth temperature of 700 °C and O2 flows in the range of 600–800 SCCM. A relatively narrow growth window was found for κ-Ga2O3, and best results were achieved for growth temperatures of 600 °C and the O2 flow of 800 SCCM. While phase-pure β-Ga2O3 was prepared, κ-Ga2O3 showed various degrees of parasitic β phase inclusions. X-ray diffraction and transmission electron microscopy confirmed a highly textured structure of β- and κ-Ga2O3 layers resulting from the presence of multiple in-plane domain orientations. Thermal conductivities of 53 nm-thick β-Ga2O3 (2.13 + 0.29/−0.51 W/m K) and 45 nm-thick κ-Ga2O3 (1.23 + 0.22/−0.26 W/m K) were determined by transient thermoreflectance and implications for device applications were assessed. Presented results suggest great potential of heterointegration of Ga2O3 and SiC for improved thermal management and reliability of future Ga2O3-based high power devices.

Phase Stabilized MOCVD Growth of β‐Ga2O3 Using SiOx on c‐Plane Sapphire and AlN/Sapphire Template

The growth of monoclinic phase‐pure gallium oxide (β‐Ga2O3) layers by metal–organic chemical vapor deposition on c‐plane sapphire and aluminum nitride (AlN) templates using silicon‐oxygen bonding (SiOx) as a phase stabilizer is reported. The β‐Ga2O3 layers are grown using triethylgallium, oxygen, and silane for gallium, oxygen, and silicon precursors, respectively, at 700 °C, with and without silane flow in the process. The samples grown on sapphire with SiOx phase stabilization show a notable change from samples without phase stabilization in the roughness and resistivity, from 16.2 to 4.2 nm and from 85.82 to 135.64 Ω cm, respectively. X‐ray diffraction reveals a pure‐monoclinic phase, and Raman spatial mapping exhibits higher tensile strain in the films in the presence of SiOx. The β‐Ga2O3 layers grown on an AlN template, using the same processes as for sapphire, show an excellent epitaxial relationship between β‐Ga2O3 and AlN and have a significant change in β‐Ga2O3 surface morphology.

Carbon and silicon background impurity control in undoped GaN layers grown with trimethylgallium and triethylgallium via metalorganic chemical vapor deposition

The unintentional impurity incorporation in GaN epitaxial layers impacts the electrical conductivity and optical properties of the films grown by metalorganic chemical vapor deposition (MOCVD). It is critical to control impurity-related states for device structure development. The aim of this work is to contribute to the understanding of the reasons for the presence of certain background impurities. In this paper, the unintentional impurity incorporation of carbon, hydrogen, oxygen, and silicon in undoped (u-) GaN films grown by low-pressure MOCVD were studied. Background impurity concentrations were evaluated by secondary ion mass spectroscopy (SIMS) to optimize growth parameters including V/III ratio, growth temperature (Tg), growth pressure (Pg), and gallium (Ga) precursors of trimethylgallium (TMG) or triethylgallium (TEG). Unintentional [C] and [Si] incorporations are found to be highly dependent on the growth parameters. For the same growth conditions, u-GaN films grown with a TEG precursor exhibited a lower background concentration of C compared to that of GaN grown with TMG. However, the lowest background [C] achieved was grown with TMG using optimized conditions and exhibited [C] < 4 × 1015 cm−3 which was at the detection limit of the SIMS measurement. These results were measured for a u-GaN layer grown with TMG at 200 Torr, 1030 °C, and a V/III of 3700. The lowest background [Si] of 4 × 1015 cm−3 was achieved by growing with TMG at 200 Torr, 1000 °C, and V/III of 650.

Relation between Ga Vacancies, Photoluminescence, and Growth Conditions of MOVPE-Prepared GaN Layers.

A set of GaN layers prepared by metalorganic vapor phase epitaxy under different technological conditions (growth temperature carrier gas type and Ga precursor) were investigated using variable energy positron annihilation spectroscopy (VEPAS) to find a link between technological conditions, GaN layer properties, and the concentration of gallium vacancies (VGa). Different correlations between technological parameters and VGa concentration were observed for layers grown from triethyl gallium (TEGa) and trimethyl gallium (TMGa) precursors. In case of TEGa, the formation of VGa was significantly influenced by the type of reactor atmosphere (N2 or H2), while no similar behaviour was observed for growth from TMGa. VGa formation was suppressed with increasing temperature for growth from TEGa. On the contrary, enhancement of VGa concentration was observed for growth from TMGa, with cluster formation for the highest temperature of 1100 °C. From the correlation of photoluminescence results with VGa concentration determined by VEPAS, it can be concluded that yellow band luminescence in GaN is likely not connected with VGa; additionally, increased VGa concentration enhances excitonic luminescence. The probable explanation is that VGa prevent the formation of some other highly efficient nonradiative defects. Possible types of such defects are suggested.

Understanding indium incorporation of InGaN grown on polar, semi-polar, and non-polar orientation by metal–organic vapor phase epitaxy

We studied indium incorporation into InGaN/GaN quantum wells grown by metal–organic vapor phase epitaxy by systematically varying of gallium and indium precursor flows on (0001), (101¯3), (112¯2), and (101¯0) orientations. The layer thickness and indium composition obtained from x-ray diffraction analysis were correlated with a model based on indium and gallium incorporation efficiencies. In the model, the indium incorporation efficiency is reproduced by the Langmuir surface coverage of gallium, indicating that indium atoms close to gallium atoms can be incorporated preferably.

Temperature Dependence of Ultrathin Mixed-Phase Ga2O3 Films Grown on the α-Al2O3 Substrate via Mist-CVD.

Alpha (α)- and beta (β)-phase gallium oxide (Ga2O3), emerging as ultrawide-band gap semiconductors, have been paid a great deal of attention in optoelectronics and high-performance power semiconductor devices owing to their ultrawide band gap ranging from 4.4 to 5.3 eV. The hot-wall mist chemical vapor deposition (mist-CVD) method has been shown to be effective for the growth of pure α- and β-phase Ga2O3 thin films on the α-Al2O3 substrate. However, challenges to preserve their intrinsic properties at a critical growth temperature for robust applications still remain a concern. Here, we report a convenient route to grow a mixed α- and β-phase Ga2O3 ultrathin film on the α-Al2O3 substrate via mist-CVD using a mixture of the gallium precursor and oxygen gas at growth temperatures, ranging from 470 to 700 °C. The influence of growth temperature on the film characteristics was systematically investigated. The results revealed that the as-grown Ga2O3 film possesses a mixed α- and β-phase with an average value of dislocation density of 1010 cm–2 for all growth temperatures, indicating a high lattice mismatch between the film and the substrate. At 600 °C, the ultrathin and smooth Ga2O3 film exhibited a good surface roughness of 1.84 nm and an excellent optical band gap of 5.2 eV. The results here suggest that the mixed α- and β-phase Ga2O3 ultrathin film can have great potential in developing future high-power electronic devices.

Microstrip Array Ring FETs with 2D p-Ga2O3 Channels Grown by MOCVD

Gallium oxide (Ga2O3) thin films of various thicknesses were grown on sapphire (0001) substrates by metal organic chemical vapor deposition (MOCVD) using trimethylgallium (TMGa), high purity deionized water, and silane (SiH4) as gallium, oxygen, and silicon precursors, respectively. N2 was used as carrier gas. Hall measurements revealed that films grown with a lower VI/III ratio had a dominant p-type conduction with room temperature mobilities up to 7 cm2/Vs and carrier concentrations up to ~1020 cm−3 for thinner layers. High resolution transmission electron microscopy suggested that the layers were mainly κ phase. Microstrip field-effect transistors (FETs) were fabricated using 2D p-type Ga2O3:Si, channels. They achieved a maximum drain current of 2.19 mA and an on/off ratio as high as ~108. A phenomenological model for the p-type conduction was also presented. As the first demonstration of a p-type Ga2O3, this work represents a significant advance which is state of the art, which would allow the fabrication of p-n junction based devices which could be smaller/thinner and bring both cost (more devices/wafer and less growth time) and operating speed (due to miniaturization) advantages. Moreover, the first scaling down to 2D device channels opens the prospect of faster devices and improved heat evacuation.

Temperature dependence of β-Ga2O3 heteroepitaxy on c-plane sapphire using low pressure chemical vapor deposition

β-Ga2O3 has drawn significant attention for power electronics and deep ultraviolet (UV) photodetector applications owing to its wide bandgap of ~4.4–4.9 eV and high electric breakdown strength of ~7–8 MV/cm. Growth of β-Ga2O3 epitaxial thin films with high growth rate has been recently reported using low pressure chemical vapor deposition (LPCVD) technique. In this work, we have investigated the effect of growth temperature on β-Ga2O3 films grown on c-plane sapphire substrates using LPCVD. We performed growths by varying temperatures from 800 °C to 950 °C while keeping all other growth parameters (Ar/O2 gas flow rates, growth pressure, and Gallium precursor to substrate distance) constant. Optical, structural, and surface characterizations are performed to determine the thickness, bandgap, phase purity, crystal orientation, and crystalline quality of the grown thin films. Amorphous islands of Ga2O3 are observed at growth temperature of 800 °C while continuous and crystalline (−201) oriented β-Ga2O3 thin films are achieved for growth temperatures of 850–950 °C. Crystallinity of the films is found to improve with increase in growth temperature with a minimum rocking full width at half maximum of 1.52º in sample grown at 925 °C. For all the samples grown at and above 875 °C, transmittance measurements revealed an optical bandgap of ~4.77–4.80 eV with high growth rate of ~6 µm/h.

Exploration of Monolayer MoS2 Template-Induced Growth of GaN Thin Films via Plasma-Enhanced Atomic Layer Deposition

GaN thin films have been directly grown on monolayer MoS2 by plasma-enhanced atomic layer deposition at 260 °C using triethylgallium as the gallium precursor along with Ar/N2/H2 plasma for the first time. Mechanically exfoliated coalesced films of mono-MoS2 are characterized by Raman spectroscopy before and after the deposition. GaN shows a polycrystalline wurtzite structure through X-ray diffraction, whereas high-resolution transmission electron microscopy reveals that GaN has crystallized at the interface region with mono-MoS2 along the [0001] direction, exhibiting well-ordered lattice and sharp interface. This type of film growth on MoS2 template here is the evidence of the Stranski–Krastanov mode. In terms of the dependence of the growth rate and the surface morphologies on ALD cycles, we further concluded that the GaN growth can be divided into four phases, giving a deep insight into the growth mechanism of hybrid GaN/MoS2 system.

Annealing induced surface restructuring in hydrothermally synthesized gallium oxide nano-cuboids

Gallium Oxide (Ga2O3) nanostructures are synthesized using a hydrothermal approach and the effect of different gallium precursors on the morphology of gallium nanostructures is studied. The rice-like nanostructures are obtained in gallium chloride and gallium nitrate precursors, whereas nano-cuboids are formed in the case of gallium acetylacetonate. The size of the edge defined nano-cuboid is in the range of 0.6 μm × 0.3 μm × 0.2 μm. The as-synthesized nano-cuboids are in the metastable phase “α” and converts to a stable “β” phase after annealed at a higher temperature (~850 °C). Post synthesis thermal annealing also results in the creation of nanopores on the surface of these nano-cuboids. Pores size increases with an increase in annealing temperature till 950 °C, further increase in annealing temperature reduces the size of pores and a smoother surface appeared. The annealing induced surface restructuring offers significant alteration on nano-cuboid properties that could be beneficial for surface-related applications.

Synthesis of Silver Gallium Selenide (AgGaSe₂) Nanotubes and Nanowires by Template-Based Electrodeposition.

In this work, a systematic investigation of the different parameters that control the electrodeposition processes was carried out at the aim to synthetizing AgGaSe₂ nanostructures. We found that pH is a key parameter to control both the morphology and composition of the nanostructures. Low pH favours mainly the formation of Ag2Se nanotubes with a scarce mechanical stability, while multi-phase nanowires well anchored to the substrate were obtained at higher pH. We also found that it was necessary to increase dramatically the concentration of the gallium precursor into the deposition bath in order to obtain AgGaSe₂ owing to lower redox potential of the Ga3+/Ga couple than Ag2+/Ag and Se4+/Se. Besides, the addition of specific complexing agents to deposition bath was necessary to better control the composition of the nanostructures. By increasing gallium precursor concentration and adding complexing agents, it was possible to obtain for the first time nanostructures of amorphous AgGaSe₂ with different amount of Ga via one-step electrodeposition.

Low-temperature growth of gallium oxide thin films by plasma-enhanced atomic layer deposition

Gallium oxide (Ga2O3) thin films were deposited by plasma-enhanced atomic layer deposition (PEALD) applying a capacitively coupled plasma source where trimethylgallium (TMGa) as the gallium precursor and oxygen (O2) plasma were used in a substrate temperature (Ts) in range of 80–200 °C. TMGa exhibits high vapor pressure and therefore facilitates deposition at lower substrate temperatures. The Ga2O3 films were characterized by spectroscopic ellipsometry (SE), x-ray photoelectron spectroscopy (XPS), and capacitance-voltage (C-V) measurements. The SE data show linear thickness evolution with a growth rate of ∼0.66 Å per cycle and inhomogeneity of ≤2% for all samples. The refractive index of the Ga2O3 thin films is 1.86 ± 0.01 (at 632.8 nm) and independent of temperature, whereas the bandgap slightly decreases from 4.68 eV at Ts of 80 °C to 4.57 eV at 200 °C. XPS analysis revealed ideal stoichiometric gallium to oxygen ratios of 2:3 for the Ga2O3 layers with the lowest carbon contribution of ∼10% for the sample prepared at 150 °C. The permittivity of the layers is 9.7 ± 0.2 (at 10 kHz). In addition, fixed and mobile oxide charge densities of 2–4 × 1012 and 1–2 × 1012 cm−2, respectively, were observed in the C-V characteristics. Moreover, the Ga2O3 films show breakdown fields in the range of 2.2–2.7 MV/cm. Excellent optical and electrical material properties are maintained even at low substrate temperatures as low as 80 °C. Hence, the TMGa/O2 PEALD process is suitable for electronic and optoelectronic applications where low-temperature growth is required.

Hydride Vapor‐Phase Epitaxy Reactor for Bulk GaN Growth

An hydride vapor‐phase epitaxy reactor for the growth of bulk GaN crystals with a diameter of 50 mm is developed. Growth rate nonuniformity of 1% is achieved using an axisymmetric vertical gas injector with stagnation point flow. Chemically resistant refractory materials are used instead of quartz in the reactor hot zone. High‐capacity external gallium precursor sources are developed for the nonstop growth of the bulk GaN layers. A load‐lock vacuum chamber and a dry in situ growth chamber cleaning are implemented to improve the growth process reproducibility. Freestanding GaN crystals with a diameter of 50 mm are grown with the reactor.

Achieving homogeneity of InGaN/GaN quantum well by well/barrier interface treatment

A new pretreatment method is adopted during the metal-organic chemical vapor deposition (MOCVD) epitaxial growth of InGaN/(In) GaN multiple quantum well (MQW), in which when the growth of under barrier of each QW is finished, i. e. before the growth of each well layer, the gallium precursor flow is switched off while indium and nitrogen precursor flows are kept on for an extra period of time. The structural and luminescence properties of samples with different pretreatment duration are investigated by high resolution X-ray diffraction, electroluminescence, temperature dependent photoluminescence and micro-photoluminescence. The results show that a better homogeneity of quantum wells can be achieved by this preprocess. This method operates mainly due to partially releasing the deformation energy and thus attenuating the composition pulling effect in InGaN well layer growth.