Gadolinium Aluminum Gallium Garnet Research Articles

Characterization of GAGG:Ce scintillators with various Al-to-Ga ratio

We have studied the scintillation properties of cerium doped gadolinium aluminum gallium garnet (GAGG:Ce) scintillators with various Al-to-Ga ratio. Having many advantages, like high density (6.63g/cm3), high light output, fair energy resolution and quite fast decay time, the scintillators are an excellent solution for gamma rays detection. In this paper performance of the GAGG:1%Ce crystals with different Al-to-Ga ratios is presented. The study covered measurements of emission spectra, light output, energy resolution and non-proportionality for each crystal. It was observed that the light output of the recently obtainable crystals varies from 40,000 to 55,000ph/MeV. Maximum emission wavelength of about 520nm promotes silicon based photodetectors for use with these scintillators. The best energy resolution of 3.7% at 662keV, measured with Hamamatsu S8664-1010 APD, was obtained for the sample with the minimum gallium content. This result is close to these obtained with the group of scintillators retaining very good energy resolution, like LaCl3 and CeBr3.

Co-Precipitation Synthesis of Gadolinium Aluminum Gallium Oxide (GAGG) via Different Precipitants

In order to obtain a uniform transparent ceramic scintillator, well-dispersed fine starting powders with high-purity, small grain size, spherical morphology and high sinter-ability are necessary. In this study, Ce3+ doped gadolinium aluminum gallium garnet Gd3Al3Ga2O12 (GAGG) powders were synthesized by the co-precipitation method. NH4OH, NH4HCO3 and the mixed solution of NH4OH and NH4HCO3 were used as precipitants, respectively. The precursor composition, phase formation process, microstructure, morphology, particle size distribution and luminescent properties of obtained GAGG powders were measured. The results show that powders prepared using the mixed precipitant exhibit the best microstructural morphology, good sinter-ability and highest luminescent intensity. Pure GAGG polycrystalline powders could be obtained at about 950°C for 1.5 h and the average size of the particles is about 50 nm. The photoluminescence spectrum shows a strong green-yellow emission near 540 nm.

Luminescence and Luminescence Quenching in Gd3(Ga,Al)5O12 Scintillators Doped with Ce3+

The optical properties of gadolinium gallium aluminum garnet, Gd3(Ga,Al)5O12, doped with Ce(3+) are investigated as a function of the Ga/Al ratio, aimed at an improved understanding of the energy flow and luminescence quenching in these materials. A decrease of both the crystal field strength and band gap with increasing content of Ga(3+) is observed and explained by the geometrical influence of Ga(3+) on the crystal field splitting of the 5d level in line with theoretical work of Muñoz-García et al. ( uñoz-García, A. B.; Seijo, L. Phys. Rev. B 2010, 82, 184118 ). Thermal quenching results in shorter decay times as well as reduced emission intensities for all samples in the temperature range from 100 to 500 K. An activation energy for emission quenching is calculated from the data. The band gap of the host is measured upon Ga substitution and the decrease in band gap is related to Ga(3+) substitution into tetrahedral sites after all octahedral sites are occupied in the garnet material. Based on the change in band gap and crystal field splitting, band diagrams can be constructed explaining the low thermal quenching temperatures in the samples with high Ga content. The highest luminescence intensity is found for Gd3(Ga,Al)5O12 with 40% of Al(3+) replaced by Ga(3+).

Single crystal Ce doped scintillator material with garnet structure sensitive to gamma ray and neutron radiation

A mixed garnet scintillator host material is obtained from the melt—Yttrium Gadolinium Gallium Aluminum Garnet (YGGAG). In addition to the high thermal and chemical stability and radiation hardness found in garnet crystals, it offers sensitivity to neutrons due to the presence of Gd atoms, has lower melting temperature than yttrium aluminum garnet, and similar crystallization behavior suitable for growth of large volume crystals. Crystals of YGGAG doped with Ce of 10×10×10mm3 have already demonstrated energy resolution of 10% at 662keV.

Crystal growth and optical properties of Nd: GGAG

Neodymium-doped gadolinium gallium aluminum garnet (Nd: Gd3Ga5−xAlxO12, Nd: GGAG) has been grown by the Czochralski method. The transparent and optically good quality crystals were grown in the composition range form x = 0.1 to x = 2.0 and less than 2.5 at% neodymium concentration. The effective distribution coefficient for Nd in GGAG growth was 0.46. The refractive index at the 1.10 μm wavelength varied with the aluminum context x from 1.94 (x = 0.2) to 1.92 (x = 1.0). The results of stable and transient optical absorption measurements show that GGAG is applicable for use as a solid state laser material.