GaAs Diodes Research Articles

The Electrical Characteristics of GaAs-MgO Interfaces of GaAs MIS Schottky Diodes

Many researches pay attention to the metal-semiconductor interface barrier, due to its effect on device. Deliberate growing an interface layer to affect and improve the quality of device, especially metal-insulator-semiconductor (MIS) structures, arouses wide attention. In this paper, Be-doped GaAs was grown on substrate wafer by molecular beam epitaxy (MBE) on purpose before depositing insulator layer, and then MgO film as the dielectric interface layer of Au/GaAs were deposited using atomic layer deposition (ALD) method. The interface electrical characteristics of the metal-insulator-semiconductor (MIS) structures were investigated in detail. The barrier height and ideal factor of GaAs diode parameters were calculated by means of current-voltage (I-V) characteristics. Experimental result showed that along with the increasing of the doping content, the Schottky barrier height increasing, but the ideal factor decrease at first and then increase.

IMPATT Diodes Based on 〈111〉, 〈100〉, and 〈110〉 Oriented GaAs: A Comparative Study to Search the Best Orientation for Millimeter-Wave Atmospheric Windows.

The authors have carried out the large-signal (L-S) simulation of double-drift region (DDR) impact avalanche transit time (IMPATT) diodes based on 〈111〉, 〈100〉, and 〈110〉 oriented GaAs. A nonsinusoidal voltage excited (NSVE) L-S simulation technique is used to investigate both the static and L-S performance of the above-mentioned devices designed to operate at millimeter-wave (mm-wave) atmospheric window frequencies, such as 35, 94, 140, and 220 GHz. Results show that 〈111〉 oriented GaAs diodes are capable of delivering maximum RF power with highest DC to RF conversion efficiency up to 94 GHz; however, the L-S performance of 〈110〉 oriented GaAs diodes exceeds their other counterparts while the frequency of operation increases above 94 GHz. The results presented in this paper will be helpful for the future experimentalists to choose the GaAs substrate of appropriate orientation to fabricate DDR GaAs IMPATT diodes at mm-wave frequencies.

Effect of temperature on the current (capacitance and conductance)–voltage characteristics of Ti/n-GaAs diode

In this study, Ti/n-GaAs Schottky barrier diode has been fabricated by DC magnetron sputtering. The current–voltage, capacitance–voltage, and conductance–voltage characteristics of Ti/n–GaAs diode have been investigated in the temperature range of 80–320 K. The ideality factor and barrier height values have been calculated from the forward current–voltage characteristics. The variation of the diode parameters with the sample temperature has been attributed to the presence of the lateral inhomogeneities of the barrier height. The temperature dependent capacitance–voltage characteristics have been measured to calculate the carrier concentration, diffusion potential, barrier height, and temperature coefficient of the barrier height (α = −0.65 meV K−1). The fact that the temperature coefficient of the barrier height changes from metal to metal has been ascribed to the chemical nature of the contact metal or metal electronegativity.

Effects of 915 nm GaAs diode laser on mitochondria of human dermal fibroblasts: analysis with confocal microscopy.

Low-level laser therapy (LLLT) is widely used in tissue regeneration and pain therapy. Mitochondria are supposed to be one of the main cellular targets, due to the presence of cytochrome C oxidase as photo-acceptor. Laser stimulation could influence mitochondria metabolism affecting mainly transmembrane mitochondrial potential (Δψm). The aim of our study is to evaluate "in vitro" the early mitochondrial response after irradiation with a 915 GaAs laser. Since some evidences suggest that cellular response to LLLT can be differently modulated by the mode of irradiation, we would like to evaluate whether there are changes in the mitochondrial potential linked to the use of the laser treatments applied with continuous wave (CW) in respect to those applied with pulsed wave (PW). In this study, we analyzed effects of irradiation with a 915-nm GaAs diode laser on human dermal fibroblast. We compared effects of irradiation applied with either CW or PW at different fluences 45-15-5 J/cm(2) on Δψm. Laser scanning microscopy (LSM) was used in living cells to detect ROS (reactive oxygen species) using calcein AM and real-time changes of and Δψm following distribution of the potentiometric probe tetramethylrhodamine methyl ester (TMRM). At higher doses (45-15 J/cm(2)), fibroblasts showed a dose-dependent decrement of Δψm in either the modalities employed, with higher amplitudes in CW-treated cells. This behavior is transient and not followed by any sign of toxicity, even if reactive oxygen species generation was observed. At 5 J/cm(2), CW irradiation determined a little decrease (5%) of the baseline level of Δψm, while opposite behavior was shown when cells were irradiated with PW, with a 10% increment. Our results suggest that different responses observed at cellular level with low doses of irradiation, could be at the basis of efficacy of LLLT in clinical application, performed with PW rather than CW modalities.

Simulation of Si and GaAs submicron TRAPATT diodes

Plasma formation and extraction processes in submicron silicon N + NP + , GaAs N + NP + , and GaAs NM Schottky TRAPATT (TRApped Plasma Avalanche Triggered Transit) diodes were simulated. The simulation of GaAs TRAPATT diodes was done for the first time. The quasi-hydrodynamic model was chosen for the simulation of the processes. The Synopsys TCAD Sentaurus Software Package was used. The carrier mobility dependence on phonon scattering, impurity scattering, carrier-carrier scattering, intervalley scattering (for GaAs), and mobility saturation in a high electric field was taken into account. Several generation-recombination mechanisms were included: impact ionization, Shockley–Read–Hall recombination (SRH) with doping-dependent lifetimes, trap-assisted tunnelling, band-to-band tunnelling, Auger recombination, and radiative recombination (for GaAs). We show that the so-called critical current density for plasma formation in the submicron diodes increases with the active layer thickness decrease and almost does not depend on the doping density in the active layer. The critical current density for silicon diodes is about two times lower than for the GaAs diodes. The intensive minority carrier storage in the N + and P + regions has a high influence on the voltage oscillation amplitude and frequency after the first plasma formation and extraction period. Oscillation damping takes place in the N + NP + GaAs diode with the active layer thickness of less than 0.3 µm.

3-D modeling of perimeter recombination in GaAs diodes and its influence on concentrator solar cells

This paper describes a complete modelling of the perimeter recombination of GaAs diodes which solves most unknowns and suppresses the limitations of previous models. Because of the three dimensional nature of the implemented model, it is able to simulate real devices. GaAs diodes on two epiwafers with different base doping levels, sizes and geometries, namely square and circular are manufactured. The validation of the model is achieved by fitting the experimental measurements of the dark IV curve of the manufactured GaAs diodes. A comprehensive 3-D description of the occurring phenomena affecting the perimeter recombination is supplied with the help of the model. Finally, the model is applied to concentrator GaAs solar cells to assess the impact of their doping level, size and geometry on the perimeter recombination.

Integration of TaOx-based resistive-switching element and GaAs diode

We report the integration of one selection diode and one resistive-switching memory element (1D1R) structure based on a GaAs diode on germanium-on-insulator on a Si substrate integrated with Cr/TaOx/Al memory element. The 1D1R device showed unipolar resistive-switching with an ON/OFF resistance ratio of over 102 within the voltage range 1.1 V–2.0 V. In the low resistance state, a forward-to-reverse current ratio of 60 was obtained at ±1 V.

Effect of low-level laser therapy in patients with chronic knee osteoarthritis: a single-blinded randomized clinical study

The aim of this study was to investigate the effect of low-level laser therapy (LLLT) on pain relief and functional performance in patients with chronic knee osteoarthritis (OA). Forty patients with knee OA were randomly assigned into active laser group (n = 20) and placebo laser group (n = 20). The LLLT device used was a Ga-As diode laser with a power output of 50mW, a wavelength of 850nm, and a diameter beam of 1mm. Eight points were irradiated and received dosage of 6J/point for 60s, with a total dosage of 48J/cm(2) in each session. The placebo group was identical but treated without emission of energy. LLLT was applied two times per week over the period of 4weeks. Outcome measurements included pain intensity at rest and at movement on visual analog scale, knee function using Western Ontario McMaster Universities Osteoarthritis Index scale, and ambulation duration. These measurements were collected at baseline and post-intervention. The results showed significant improvements in all assessment parameters in both groups compared to baseline. Active laser group showed significant differences in pain intensity at rest and movement, knee function, and ambulation duration when compared with the placebo group. Therefore, LLLT seemed to be an effective modality for short-term pain relief and function improvement in patients with chronic knee OA.

The effect of diode superpulsed low-level laser therapy on experimental orthodontic pain caused by elastomeric separators: a randomized controlled clinical trial

The aim of this study was to evaluate the efficacy of diode superpulsed low-level laser therapy (SLLLT) in reducing experimentally induced orthodontic pain. Overall, 120 subjects (23.01 ± 1.39 years) were enrolled for a clinical trial. Subjects were randomly assigned to upper (U, N = 60) or lower (L, N = 60) jaw groups. All subjects received 4 elastomeric separators mesial and distal to the upper (U group) or lower (L group) right first molar and bicuspids. Each subject of the U and L groups was randomly assigned to laser (Ul, N = 20 and Ll, N = 20), placebo (Up, N = 20 and Lp, N = 20) or control (Uc, N = 20 and Lc, N = 20) sub-groups. Subjects in laser groups received a single GaAs diode SLLLT application (910 nm, 160 mW, beam diameter of 8 mm, applied for 340 s) immediately after placing orthodontic separators. Placebo groups received a simulated SLLLT and controls did not receive any therapy. All participants compiled a survey on pain duration and a 100-mm visual analogue scale immediately after the separators placement and after 12, 24, 36, 48, 72, and 96 h. Pain intensity of laser groups was significantly lower compared to placebo and control groups (p = 0.0001). In the laser group, 70% of subjects felt pain, while in the placebo and control groups all subjects felt pain (p = 0.0001). The end of pain occurred earlier in laser compared to placebo and control groups (p = 0.021). A single-diode SLLLT application appeared to be effective in reducing the intensity and duration of experimentally induced orthodontic pain and could be used in daily orthodontic practice.

Utilizing NDR effect to reduce switching threshold variations in memristive devices

Variations in the switching threshold voltage of memristive devices present significant challenges for their integration into large-scale circuits. In this paper, we propose to address this problem by adding a device exhibiting S-type (N-type) negative differential resistance (NDR) in series (parallel) with memristive devices. The main effect comes from the transition between low- and high-conductivity branches of the NDR device, which leads to a redistribution of the voltage drop inside the device stack, and, as a result, the effective lowering of variations in the switching threshold. The idea is checked experimentally using a TiO2−x memristive device connected in parallel with a tunnel GaAs diode.

Characterization and Modeling Analysis for Metal-Semiconductor-Metal GaAs Diodes with Pd/SiO2 Mixture Electrode

Characterization and modeling of metal-semiconductor-metal (MSM) GaAs diodes using to evaporate SiO2 and Pd simultaneously as a mixture electrode (called M-MSM diodes) compared with similar to evaporate Pd as the electrode (called Pd-MSM diodes) were reported. The barrier height (φ b) and the Richardson constant (A*) were carried out for the thermionic-emission process to describe well the current transport for Pd-MSM diodes in the consideration of the carrier over the metal-semiconductor barrier. In addition, in the consideration of the carrier over both the metal-semiconductor barrier and the insulator-semiconductor barrier simultaneously, thus the thermionic-emission process can be used to describe well the current transport for M-MSM diodes. Furthermore, in the higher applied voltage, the carrier recombination will be taken into discussion. Besides, a composite-current (CC) model is developed to evidence the concepts. Our calculated results are in good agreement with the experimental ones.

Low‐level‐laser irradiation induces photorelaxation in coronary arteries and overcomes vasospasm of internal thoracic arteries

As low-level laser irradiation (LLLI) seems to induce vasodilation besides many other known biological effects, LLLI has been increasingly used in therapy of medical conditions with various irradiation parameters. The aim of this study was to investigate the effect of LLLI on photorelaxation of human coronary and internal thoracic arteries (ITA). Thirty vessel segments of ITA used for routine coronary artery bypass grafting as well as left anterior descending coronary arteries (LAD) of patients undergoing cardiac transplantation were cut into 4-mm rings stored in a modified Krebs-Henseleit solution and evaluated in a myograph. Both types of vessel segments were irradiated by a semiconductor non-thermal GaAs diode laser operating at a wavelength of 680 nm. After precontraction with thromboxane agonist U44619, respective relaxation responses were evaluated and compared to pharmacological dilatation induced by substance P. Mean pharmacological vasodilation by substance P was 22.6 ± 3.3%, 12.8 ± 1.4%, and 20.4 ± 3.2% in macroscopic healthy LAD, LAD with atheromatous plaque, and ITA, respectively. Average photorelaxation induced by LLLI was 16.5 ± 2.0%, 1.9 ± 1.7%, and 6.8 ± 4.7%, accordingly. Vasodilatatory responses induced either by substance P or administration of LLLI were significantly decreased in LAD with atheromatous plaque (P < 0.0001). Vasospasms of ITA segments occurring during experiments could be abandoned when LLLI was administered. Macroscopic healthy LAD exposed to LLLI revealed significant photorelaxation. With the administration of LLLI, 73% of the maximal obtainable effect by an endothelium-dependent vasodilator could be reached. Furthermore, LLLI has the potential to overcome vasospasms of ITA.

Low Level Laser Therapy: laser radiation absorption in biological tissues

In this paper we report the results of an experimental study in which we have measured the transmitted laser radiation through dead biological tissues of various animals (chicken, adult and young bovine, pig) in order to evaluate the maximum thickness through which the power density could still produce a reparative cellular effect. In our experiments we have utilized a pulsed laser IRL1 ISO model (based on an infrared diode GaAs, λ=904 nm) produced by BIOMEDICA s.r.l. commonly used in Low Level Laser Therapy. Some of the laser characteristics have been accurately studied and reported in this paper. The transmission results suggest that even with tissue thicknesses of several centimeters the power density is still sufficient to produce a cell reparative effect.

Characteristics of a GaN-based Gunn diode for THz signal generation

A generalized large-signal computer simulation program for a Gunn oscillator has been developed. The properties of a Gunn diode oscillator based on the widely explored GaN, are investigated using the developed program. The results show some interesting properties in GaN Gunn diodes which are not seen in GaAs and InP diodes. An output power of 1400 kW/cm2 is achieved from the GaN Gunn diode, as compared to 4.9 kW/cm2 from a GaAs diode.

Comparative Evaluation of the Effects of Different Photoablative Laser Irradiation Protocols on the Gingiva of Periodontopathic Patients

We aimed at quantifying the presence of periodontopathogens in gingival biopsies from periodontitis patients treated with different photoablative lasers (diode GaAs, Er:YAG, Nd:YAG, and CO(2) lasers) and histologically analyzing their effects on the gingiva. Substantial evidence indicates that intracellular location of periodontal bacteria in the gingival epithelium may contribute to chronic periodontitis. Sixteen adult subjects with chronic periodontitis were subjected to conventional scaling/root planing and topical chlorhexidine, and immediately laser-irradiated on the inner and outer free gingiva. Small gingival biopsies were subjected to real-time polymerase chain reaction and cytofluorescence to identify periodontopathogens; tissue damage and endothelial ICAM-1 expression were assessed by histological and immunofluorescence analyses. High DNA levels of Porphyromonas gingivalis, Aggregatibacter actinomycetemcomitans, Fusobacterium nucleatum, Treponema denticola, Prevotella intermedia, and Ekenella corrodens, were detected in all samples. Nd:YAG and diode lasers were capable of eradicating periodontopathogenic bacteria endowed within gingival epithelial cells outside periodontal pockets, without causing connective tissue damage and microvessel rupture. They also reduced ICAM-1 immunolabelling by the vascular endothelium. Conversely, Er:YAG lasers induced marked microvessel rupture and bleeding and failed to completely and selectively ablate the infected gingival epithelium, whereas CO(2) laser caused heat-induced coagulation of the lamina propria. This study indicates that periodontopathogens can persist within cells outside the pocket epithelium, despite conventional periodontal treatment. Nd:YAG and diode lasers are able to eradicate intra- and extracellular bacteria from these sites, suggesting that they can be considered suitable devices to improve the clinical outcome of periodontal disease.

A varied shaping time noise analysis of Al0.8Ga0.2As and GaAs soft X-ray photodiodes coupled to a low-noise charge sensitive preamplifier

The noise sources affecting Al0.8Ga0.2As and GaAs spectroscopic X-ray photon counting p+–i–n+ photodiodes connected to a custom low-noise charge sensitive preamplifier are quantified by analysing the system's response to pulses from a signal generator and varying the system's shaping amplifier's shaping time (from 0.5μs to 10μs). The system is investigated at three temperatures (−10°C, +20°C and +50°C) in order to characterise the variation of the component noise sources and optimum shaping time with temperature for Al0.8Ga0.2As and GaAs diodes. The analysis shows that the system is primarily limited by dielectric noise, hypothesised to be mainly from the packaging surrounding the detector, for both types of diode and at each temperature.

The spectral resolution of high temperature GaAs photon counting soft X-ray photodiodes

Circular mesa GaAs p+–i–n+ diodes for photon counting soft X-ray spectroscopy have been fabricated and characterised over a temperature range of +80 to –30 °C. The spectroscopic performance of the diodes, as measured by the FWHM of the Mn Kα X-ray line from an 55Fe radioisotope, is reported. In addition, we compare the GaAs diodes with previously fabricated and characterised Al0.8Ga0.2As p+–i–n+ diodes of similar geometry.

A new low-cost 10 ns pulsed Ka-band radar

Two Gunn oscillators, conventional intermediate frequency building blocks, and a modified GaAs diode detector are combined to form a portable monostatic 10 ns instrumentation radar for outdoor K(a)-band radar cross section measurements. At 37.8 GHz the radar gives +20 dBm output power and its tangential sensitivity is -76 dBm. Processing bandwidth is 125 MHz, which also allows for some frequency drift in the Gunn devices. Intra-pulse frequency chirp is less than 15 MHz. All functions are steered by a microcontroller. First measurements convince that the construction has a reasonable ability to reduce close-to-ground surface clutter and gives an effective way of resolving target detail. This is beneficial especially when amplitude fluctuations disturb measurements with longer pulses. The new unit operates on 12 V dc, draws a current of less than 3 A, and weighs 5 kg.

Lasers in Periodontics- A dilemma

With the development of the first laser by Mainam in 1960, over decades, the subject has grown by leaps and bounds in dentistry over the conventional therapies. However, despite a large number of studies, the application of lasers for the treatment of periodontitis remains controversial. Lasers used today are either a continuous, pulsed (gated) or running pulse waveform. E.g. CO2, Nd:YAG, Ho:YAG, Er:YAG, Er,Cr:YSGG, Nd:YAP, GaAs(diode) and Argon. Two main factors that determine the extent of energy absorption is the wavelength of the light used and the optical properties of the tissue. Others include pigmentation, water content, mineral content, heat capacity and latent heat of transformation. Lasers tissue interactions include the physiologic and mechanical processes of heat conduction and dissipation, the degree of tissue inflammation and vascularity and the availability of progenitor cells to participate in the healing process. The present article is a literature review designed to assess the rationality of using lasers in periodontal therapy.

Development of GaAs Gunn Diodes and Their Applications to Frequency Modulated Continuous Wave Radar

In this work, we have designed and fabricated the GaAs Gunn diodes for a 94 GHz waveguide voltage controlled oscillator (VCO) which is one of the important parts in a frequency modulated continuous wave (FMCW) radar application. For fabrication of the high power GaAs Gunn diodes, we adopted a graded gap injector which enhances the output power and conversion efficiency by effectively removing the dead-zone. We have measured RF characteristics of the fabricated GaAs Gunn diodes. The operating current, oscillation frequency, and output power of the fabricated GaAs Gunn diodes are presented as a function of the anode diameters. The operating current increases with anode diameters, whereas the oscillation frequency decreases. The higher oscillation frequency was obtained from 60 µm anode diameters of the fabricated Gunn GaAs diodes and higher power was obtained from 68 µm. Also, for application of the 94 GHz FMCW radar system, we have fabricated the 94 GHz waveguide VCO. From the fabricated GaAs Gunn diodes of anode diameter of 60 µm, we have obtained the improved VCO performance.