Gain Composition Research Articles

Time, temperature and concentration resolved Yb3+ luminescence study in co-sputtered Cu2-xGaxS2 (0.1 < x < 1.6) thin films with a Cu–Ga composition gradient

The broad class of Cu(Al,Ga,In) (S,Se,Te)2 solar absorber materials when doped with Yb3+ are interesting for thin film based luminescent solar concentrator (LSC's) application. In this work the strong and broad absorption properties of co-sputtered CuGaS2 (CGS) thin films combined with the luminescent properties of Yb are reported. Energy-dispersive x-ray spectroscopy (EDS), x-ray diffraction, transmission, excitation, and temperature dependent emission as well as radiative lifetime measurements are performed on thin films with varying Cu:Ga ratios and Yb3+ concentrations. It is found that Yb3+ emission can be broadly sensitized by the host in the range of 200–600 nm. A lower Cu:Ga ratio, crystallinity and post annealing in air provides a positive impact on the sensitization of Yb3+ emission. The temperature dependent time integrated decay curves show a clear thermal energy barrier of about 0.2 eV. Because the exponential tail, with a lifetime of 110 μs, is constant with temperature, we conclude that the barrier is connected to the thermal release of electrons trapped at the Yb2+ ground state. The low energy transfer efficiency from the host to the Yb dopant is attributed to efficient non-radiative electron-hole pair recombination. The prospects and design criteria of Cu(Al,Ga,In) (S,Se,Te)2 solar absorber materials for LSC applications is the further subject of the discussion.

Step-by-step strategy to improve the performance of the (La,Sr)(Ga,Mg)O3-δ electrolyte for symmetrical solid oxide fuel cells

Research on the highly conductive solid electrolyte with the overall composition of (La,Sr) (Ga,Mg)O3-δ (LSGM) has reached a new stage of development in recent years due to the successes in the field of symmetrical electrochemical devices in which LSGM utilizing as a supporting layer. This study shows a “step-by-step” approach to modify the LSGM electrolyte using both individual techniques and their combinations to improve the functional properties of the LSGM. As a result of a multi-step modification, the new electrolyte of composition (La0.8Sr0.2)0.98Ga0.7Fe0.1Mg0.2O3-δ + 0.5 wt% Fe2O3 was obtained. It is shown that the conductivity of new electrolyte is about five times higher than that of the basic La0.8Sr0.2Ga0.8Mg0.2O3-δ oxide at 600 °C. Furthermore, the better thermo-mechanical and chemical compatibility with the iron-based electrode was found. It also shows insignificant resistance degradation in long-term tests in air and satisfactory stability in wet hydrogen. Based on the results of the research it can be concluded that the new electrolyte obtained by step-by-step modification has great prospects for utilization in symmetrical fuel cells.

Photoemission properties of the variable component GaInAsSb heterojunction nanopillar array cathode

The Ga x In1−xAs y Sb1−y heterojunction NPAs exhibit different properties depending on the material composition. Changing the Ga composition significantly affects the quantum efficiency and broadening of the heterojunction nanopillar array, while varying the As composition affects the peak position of its quantum efficiency. The quantum efficiency of the heterojunction is notably influenced by changes in the height of the top layer of the heterojunction, and when there is a difference in quantum efficiency between the two materials, the quantum efficiency of the heterojunction exhibits extremum values. Furthermore, external electric fields significantly affect the quantum efficiency of nanopillar arrays, providing important references and theoretical foundations for designing and optimizing resonantly enhanced GaInAsSb nanopillar array photonic cathodes.

High mobility and hysteresis free InGaSnO thin film transistors by co-sputtering via low temperature post annealing process

In this work, InGaSnO thin film transistors (TFTs) with high mobility (>50 cm2/Vs) were prepared by a simple co-sputtering process at a low temperature of 150 ℃. In the co-sputtering process of InSnO and Ga2O3, the composition of InGaSnO can be reasonably controlled by adjusting the sputtering power in the radio frequency plasma, which significantly affects the electrical performance and stability of InGaSnO TFTs. The highly overlapping 5 s electron cloud of In and Sn and the high binding energy of Sn-O lay the foundation for the high mobility of InGaSnO TFTs. The defects related to oxygen in the channel are suppressed by the reasonable control of the composition of Ga in the multicomponent oxides. Meanwhile, the interface defects between the gate dielectric and the active layer are reduced, and a dense metal-oxygen-metal network is formed which is conducive to electron transmission. We have achieved an InGaSnO TFTs with mobility of 58.7 cm2/Vs and threshold voltage of -1.33 V. The stability under positive and negative bias stress is also significantly improved. In general, a simple co-sputtering process is entirely feasible to realize high-mobility oxide TFTs. The control of the process temperature below 150 ℃ also extends its application in flexible electronic devices.

Compositional effects on structural, electronic, elastic, piezoelectric and dielectric properties of GaInN alloys: a first-principles study.

We conduct a comprehensive theoretical analysis of wurtzite GaxIn1-xN ternary alloys, focusing on their structural, electronic, elastic, piezoelectric, and dielectric properties through rigorous first-principles calculations. Our investigation systematically explores the influence of varying Ga composition (x = 0%, 25%, 50%, 75%, 100%) on the alloy properties. Remarkably, we observe a distinctive non-linear correlation between the band gap and Ga concentration, attributable to unique slopes in the absolute positions of the valence band maximum and conduction band minimum with respect to Ga concentration. Our effective band structure analysis reveals the meticulous preservation of Bloch characters near band extrema, minimizing charge carrier scattering. Furthermore, we scrutinize deviations from linear Vegard-like dependence in elastic, piezoelectric, and dielectric constants. Additionally, our calculations encompass various optical properties, including absorption coefficient, reflectivity, refractive index, energy loss function, and extinction coefficient. We analyze their trends with photon energy, providing valuable insights into the optical behavior of GaxIn1-xN alloys. Our results, in excellent agreement with available experimental data, significantly contribute to a deeper understanding of the alloys' electronic properties. This study offers valuable insights that may illuminate potential applications of GaxIn1-xN alloys in diverse technological fields.

3D bioprinting of Gelatin-Alginate bioinks for biofabrication of in vitro liver sinusoid model

In vitro liver models are pivotal in early drug development as they serve in assessing drug toxicity. Currently, most of the liver models include static cultures of liver derived cell spheroids. Mimicking dynamic conditions (similar to native liver – such as blood flow, glucose gradients etc.) in in vitro liver models would be essential for studying drug induced liver injury (DILI). The current work investigated and developed a simple bioink composed of gelatin and alginate blends (GA) that can be used to 3D bioprint hepatocyte laden scaffolds, serving as an in vitro liver model for drug toxicity assays.Rheological evaluation (using a rotary rheometer) of various compositions of GA blends was performed to assess their printability with an extrusion bioprinter. Suitable GA compositions with human liver carcinoma cells (HepG2) were 3D bioprinted. The scaffolds were stabilized by crosslinking the alginate (using calcium chloride) and gelatin (using microbial transglutaminase). Cell viability and proliferation of HepG2 in bioprinted scaffolds was assessed for 28 days. Further work includes fabrication of HepG2 laden hollow tubes and colonization of inner lumen with human umbilical vein endothelial cells (HUVEC), followed by DILI studies in long-term perfusion culture.

Phase transitions and slow spin dynamics of slightly inverted A-site spinel CoAl2−x Ga x O4

We report the properties of an A-site spinel magnet, CoAl2−x Ga x O4, and analyze its anomalous, low-temperature magnetic behavior, which is derived from inherent, magnetically frustrated interactions. Rietveld analysis of the x-ray diffraction profile for CoAl2−x Ga x O4 revealed that the metallic ions were randomly distributed in the tetrahedral (A-) and octahedral (B-) sites in the cubic spinel structure. The inversion parameter η could be controlled by varying the gallium (Ga) composition in the range 0.055 ⩽ η ⩽ 0.664. The composition-induced Néel-to-spin-glass (NSG) transition occurred between 0.05 ⩽ η ⩽ 0.08 and was verified by measurements of DC-AC susceptibilities χ and thermoremanent magnetization (TRM) below the Néel transition temperature T N. The relaxation rate and derivative with respect to temperature of TRM increased at both T N and the spin glass (SG) transition temperature T SG. The TRM decayed rapidly above and below these transitions. TRM was highly sensitive to macroscopic magnetic transitions that occurred in both the Néel and SG phases of CoAl2−x Ga x O4. In the vicinity of the NSG boundary, there was a maximum of the TRM relaxation rate at T max < T N. With increasing inversion η(x), the anomaly at T max merged with that of the Néel transition at a tricritical point (η tc, T tc) = (0.08, 4.0 K), where the paramagnetic, Néel, and SG states met. We successfully extracted the relaxation time τ and other characteristic parameters from the TRM isothermal temporal evolution based on the Weron function derived for a purely stochastic process. To distinguish the magnetic states, we compared our results with previously studied inversion-free A-site spinel, CoRh2O4, and CoGa2O4 cluster glass. We generated an inversion-temperature phase diagram based on the comprehensive measurements of DC and AC susceptibilities, TRM, and specific heat in the range 0.055 ⩽ η ⩽ 0.664 for CoAl2−x Ga x O4. Based on this phase diagram, we speculate that a NSG quantum critical phase transition occurred at η = 0.050(6). Our findings are consistent with suppression of the long-range order antiferromagnetic state in CoAl2O4 revealed through neutron diffraction studies, even at T << T N.

10.6% external quantum efficiency germicidal UV LEDs grown on thin highly conductive n-AlGaN

We report on the material challenges of the growth of highly conductive n-AlGaN in germicidal ultraviolet light emitting diodes (GUV LEDs), with the degradation of the surface morphology of thick highly doped n-AlGaN due to the Si anti-surfactant effect. Threading dislocation inclination, increasing relaxation, and eventual cracking were observed with epitaxial n-AlGaN films thicker than 400 nm, along with an increasing Ga composition with the same metalorganic flows. With the optimization of the n-AlGaN conductivity in previous works, thin n-AlGaN films with high conductivity along with a smoothing superlattice were incorporated in GUV LED devices, resulting in LEDs with 285 nm electroluminescence, a low forward voltage of 4.2 V with a peak external quantum efficiency (EQE) of 10.6% and a peak wall-plug efficiency of 8.6% below 1 A/cm2, and an EQE of 5.5% at 20 A/cm2.

A room temperature exchange bias effect caused by the coexisting martensitic phase structures in Ni50Mn38Sb12−xGax polycrystalline Heusler alloys

The exchange bias effect is the physical cornerstone of applications, such as spin valves, ultra-high-density data storage, and magnetic tunnel junctions. This work studied the room temperature exchange bias effect by constructing a Ni50Mn38Sb12−xGax alloy system with coexisting martensitic phase structures. The study found that the exchange bias effect shows a non-monotonic change with the variation of Ga composition at 300 K, and an obvious room temperature exchange bias effect appears in the alloys with coexisting phase structures of 4O and L10, which is due to the strong exchange coupling between ferromagnetic and antiferromagnetic. Further research on the exchange bias effect and temperature shows that the blocking temperature is 420 K, and the exchange bias can stably exist in a temperature range of ∼200 K around room temperature. This work provides a method to engineer exchange bias effects at room temperature.

Observation of negative differential Resistance(NDR) in chemically synthesized CuGaSe2 nanorods

CuGaSe2 nanorods has been synthesized through chemical bath deposition method using PVP(polyvinylpyrrolidone) as capping agent. Formation of CuGaSe2 nanorods was confirmed by SEM and TEM analysis. A systematic electrical study has been done on CuGaSe2 nanostructure by changing the Cu to Ga(%) composition ratio from CuSe2 to GaSe nanostructure. I-V characteristics showed that CuGaSe2 nanorods exhibit a negative differential resistance(NDR) region and their peak/valley ratio increases with Ga(%) composition. The occurrence of the NDR region is due to the electron tunneling through the potential barrier of Cu/CuGaSe2 interface. The increase in peak current in NDR region in CuGaSe2 nanorods with the increase in Ga(%) makes them suitable application in building oscillator and memory devices.

Alteration of chromite during serpentinization of peridotites

Trace element (Zn, Co, Mn, Ni, Ga, V, Ti, and Sc) compositions of chromite in mafic-ultramafic rocks are widely used for addressing their petrogenesis and discriminating tectonic environments, but they can be altered by subsolidus re-equilibration and hydrothermal alteration, and the detailed dynamic processes are not clear. The Jinchang ophiolite in SW China is part of the Tethyan ophiolite, and consists mainly of harzburgite with minor lherzolite. These peridotites are strongly serpentinized, and contain variably modified chromite and magnetite. Two types of chromite are identified in harzburgite, including magmatic and altered chromite. The magmatic chromite occurs as granular or amoeboid minerals, or as cores surrounded by the altered chromite, and they have homogeneous major elemental compositions (Mg0.65Fe0.35(Cr0.46Al0.54)2O4), but their trace elements, such as Ni, Ga, V, Zn, Co, and Mn, are variably changed during subsolidus re-equilibration. The altered chromite consists of ferrous chromite (Mg0.15Fe0.85(Cr0.46Al0.11Fe0.43)2O4) and chromian magnetite (Fe(Cr0.15Fe0.85)2O4), which were formed by two stages of hydrothermal alteration. They are depleted in Ga and Sc, and enriched in Zn, Co and Mn during the alteration, but their Ti, Ni and V are increased and decreased in the first and second stage, respectively. Thermodynamic modeling reveals that: (1) Reaction between magmatic chromite and olivine at the first stage of alteration produces ferrous chromite and chlorite under high temperature (610–470 °C) and increasing oxygen fugacity (ΔFMQ increasing from −1 to 3) and water-rich conditions; (2) Chromian magnetite is generated by further alteration of the ferrous chromite in the second stage alteration under low temperature (< 470 °C) and decreasing oxygen fugacity conditions (ΔFMQ decreasing from 3 to −4). In addition, the first stage alteration significantly changed trace-element compositions of the magmatic chromite compared with the second stage alteration that slightly modified the ferrous chromite. This study clarifies trace element migration of chromite in the silicate mineral-hydrothermal fluid system, indicating that chromite microstructures and trace elemental compositions can record the detailed serpentinization processes.

Investigation of Dynamic-Mechanical-Thermal Analysis of Innovative Hybrid Carbon/Glass Fibers Reinforced by GNPs and Al2O3 for Marine Structures

AbstractMarine structural applications face numerous challenges related to environmental load, corrosion, and fatigue under varying time and temperature conditions. One of the major challenges faced by marine structural applications is dynamic mechanical thermal analysis (DMTA). In this study, innovative hybrid carbon/glass fibers (CGF) reinforced with different contents (1.5 wt. % and 3 wt. %) of dual nano-powders, including graphene nanoplatelets (GNPs) and aluminium oxide (Al2O3), were developed as reinforcements inside the epoxy matrix. The nanocomposites were fabricated using a hand lay-up technique, resulting in a nanocomposite sheet with dimensions of 300 mm length, 200 mm width, and 2.3 mm thickness. DMTA test specimens were prepared with dimensions of 50 mm length, 10 mm width, and 2.3 mm thickness. To ensure accuracy, three replicates were conducted for each condition, and the average values were calculated for analysis. Before DMTA, the prepared nanocomposites were analyzed using optical microscopy (OM), scanning electron microscopy (SEM), and energy-dispersive X-ray spectroscopy (EDAX) to compare the influence of incorporating dual nano-powders. DMTA was carried out at different temperature values (ranging from 10 °C to 105 °C) and times (ranging from 5 to 575 min) at 1 Hz frequency with a heating rate of 4 °C/min and a nitrogen flow rate of 20 ml/min. The main objective of this study was to investigate the influence of incorporating dual nano-powders such as GNPs and Al2O3on various dynamic mechanical properties including storage modulus, loss modulus, damping factor (DF), and glass transition temperature (Tg) of the hybrid carbon/glass fiber-reinforced epoxy composites. The fabricated hybrid CGF composite with 1.5% wt. GA nanoparticles exhibited higher values for the DF of 0.68 and the Tg of 73.4 °C. However, increasing the nanoparticle content to 3% wt. GA led to a deterioration in the DF (0.54) and a reduction in Tg (27.8 °C) due to decreased bonding between the carbon fibers (CF) and glass fibers (GF) caused by the higher nanoparticle concentration. The complex modulus (E*) values demonstrated expected trends with temperature and time for the CGF-1.5% wt. GA composite, indicating acceptable behaviour. In contrast, the CGF-3% wt. GA composite exhibited lower E* values, indicating a decrease in stiffness and mechanical properties compared to the CGF-1.5% wt. GA composite. Microstructural observations after DMTA revealed a uniform scattering of nanoparticles in the CGF-1.5% wt. GA sample, while the CGF-3% wt. GA sample demonstrated improved scattering of Al2O3nanoparticles on the surface. The microstructural analysis further indicated a brittle nature with high resistance to crack initiation and propagation in the CGF-1.5% wt. GA composite.

Domestication has altered the ABA and gibberellin profiles in developing pea seeds

Main conclusionWe showed that wild pea seeds contained a more diverse combination of bioactive GAs and had higher ABA content than domesticated peas.Although the role of abscisic acid (ABA) and gibberellins (GAs) interplay has been extensively studied in Arabidopsis and cereals models, comparatively little is known about the effect of domestication on the level of phytohormones in legume seeds. In legumes, as in other crops, seed dormancy has been largely or entirely removed during domestication. In this study, we have measured the endogenous levels of ABA and GAs comparatively between wild and domesticated pea seeds during their development. We have shown that wild seeds contained more ABA than domesticated ones, which could be important for preparing the seeds for the period of dormancy. ABA was catabolised particularly by an 8´-hydroxylation pathway, and dihydrophaseic acid was the main catabolite in seed coats as well as embryos. Besides, the seed coats of wild and pigmented cultivated genotypes were characterised by a broader spectrum of bioactive GAs compared to non-pigmented domesticated seeds. GAs in both seed coat and embryo were synthesized mainly by a 13-hydroxylation pathway, with GA29 being the most abundant in the seed coat and GA20 in the embryos. Measuring seed water content and water loss indicated domesticated pea seeds´ desiccation was slower than that of wild pea seeds. Altogether, we showed that pea domestication led to a change in bioactive GA composition and a lower ABA content during seed development.

Li/Na/K-ion reaction pathways in Ga and high-performance amorphous Ga composite anodes for Li-ion batteries

To achieve high-performance Ga anodes for alkali-ion batteries, the electrochemical Li/Na/K-ion reaction pathways in Ga are thoroughly elucidated using ex situ analytical tools. Ga exhibits a high Li-ion storage reaction owing to the formation of Li2Ga (theoretical capacity: 769 mAh g−1). However, it exhibits poor Na- and K-ion storage reactions owing to the formation of NaGa4 (theoretical capacity: 96 mAh g−1) and K3Ga13 (theoretical capacity: 89 mAh g−1), respectively. The high Li-ion storage reaction in Ga demonstrates its potential as an anode for Li-ion batteries (LIBs). Therefore, we fabricate an amorphous Ga composite (Ga/C) comprising amorphous Ga homogeneously distributed in an amorphous carbon using a simple one-pot solid-state mechanical process. Ga/C exhibits high reversible capacity, long-term Li-ion storage stability, and high rate capability. In addition, three-step confinement of amorphous Ga in the composite during continuous cycling is demonstrated and suggested as an enhancement mechanism for high-performance Ga/C anodes for LIBs. The interesting Li-ion storage reaction in Ga and high-performance amorphous Ga composites are expected to be highly applicable to LIB anodes.

Study of short-wavelength red semiconductor laser using high Ga composition GaInP quantum well based on Ge/SiGe substrate

Study of short-wavelength red semiconductor laser using high Ga composition GaInP quantum well based on Ge/SiGe substrate

Double role of CTAB as a surfactant and carbon source in Ni-Mo2C/GA composite

Double role of CTAB as a surfactant and carbon source in Ni-Mo2C/GA composite

Enriching the Deep-Red Emission in (Mg, Ba)3M2GeO8: Mn4+ (M = Al, Ga) Compositions for Light-Emitting Diodes

Red emission from Mn4+-containing oxides inspired the development of high color rendering and cost-effective white-light-emitting diodes (WLEDs). Aiming at this fact, a series of new crystallographic site modified (Mg, Ba)3M2GeO8: Mn4+ (M = Al, Ga) compositions were developed with strong deep-red emission in the reaction to UV and blue lights. The Mg3Al2GeO8 host is composed of three phases: orthorhombic-Mg3Ga2GeO8, orthorhombic-Mg2GeO4, and cubic-MgAl2O4. However, Mg3Ga2GeO8 secured an orthorhombic crystal structure. Interestingly, Mg3Al2GeO8: Mn4+ showed a 13-fold more intense emission than Mg3Ga2GeO8: Mn4+ since Mn4+ occupancy was preferable to [AlO6] sites compared to [GaO6]. The coexisting phases of MgAl2O4 and Mg2GeO4 in Mg3Al2GeO8: Mn4+ contributed to Mn4+ luminescence by providing additional [AlO6] and [MgO6] octahedrons for Mn4+ occupancy. Further, these sites reduced the natural reduction probability of Mn4+ to Mn2+ in [AlO4] tetrahedrons, which was confirmed using cathodoluminescence analysis for the first time. A cationic substitution strategy was employed on Mg3M2GeO8: Mn4+ to improve the luminescence, and Mg3-xBaxM2GeO8: Mn4+ (M = Al, Ga) phosphors were synthesized. Partial substitution of larger Ba2+ ions in Mg2+ sites caused structural distortions and generated a new Ba impurity phase, which improved the photoluminescence. Compositionally tuned Mg2.73Ba0.27Al1.993GeO8: 0.005Mn4+ exhibited a 35-fold higher emission than that of Mg3Ga1.993GeO8: 0.005Mn4+. Additionally, this could retain 70% of its ambient emission intensity at 453 K. A warm WLED with a correlated color temperature (CCT) of 3730 K and a CRI of 89 was fabricated by combining the optimized red component with Y3Al5O12: Ce3+ and 410 nm blue LED. By tuning the ratio of blue (BaMgAl10O17: Eu2+), green (Ce0.63Tb0.37MgAl11O19), and red (Mg2.73Ba0.27Al2GeO8: 0.005Mn4+) phosphors, another WLED was developed using a 280 nm UV-LED chip. This showed natural white emission with a CRI of 79 and a CCT of 5306 K. Meanwhile, three red LEDs were also fabricated using the Mg2.73Ba0.27Al1.993GeO8: 0.005Mn4+ phosphor with commercial sources. These could be potential pc-LEDs for plant growth applications.

Formation of inorganic liquid gallium particle-manganese oxide composites.

Gallium (Ga) is a low melting point post-transition metal that, under mild mechanical agitation, can form micron and submicron-sized particles with combined fluid-like and metallic properties. In this work, an inorganic network of Ga liquid metal particles was synthesised via spontaneous formation of manganese (Mn) oxide species on their liquid metallic surfaces forming an all-inorganic composite. The micron-sized Ga particles formed by sonication were connected together by Mn oxide nanostructures spontaneously established from the reduction of a Mn salt in aqueous solution slightly above the melting point of Ga. The formed Mn oxide nanostructures were found to coalesce from the surface of the Ga particles into a continuous inorganic network. The morphology of the composites could be altered by varying the Mn salt concentration and by performing post-treatment annealing. The composites presented a shell of various Mn oxide nanostructures including wrinkled sheets, rods and nanoneedles, around spherical liquid Ga particles, and a liquid metal core. The photoelectric and optical properties of the composites were thoroughly characterised, which revealed decreasing bandgaps and valence band edge characteristics as a function of increased Mn oxide coverage. The photoluminescence properties of the composites could be also engineered by increasing the Mn oxide coverage. The all-inorganic liquid Ga composite could be formed via a straightforward reduction reaction of a Mn-rich salt at the surface of liquid Ga particles with tunable surface properties for future optoelectronic applications.

Atomic layer deposition of Er-doped yttrium aluminum gallium garnet nanofilms with tunable crystallization and electroluminescence properties.

Polycrystalline erbium-doped Y3(AlxGa1-x)5O12 (Er-YAGG) nanofilms with various Al/Ga compositions are deposited on silicon using atomic layer deposition followed by annealing at different temperatures. The Al/Ga ratios and the corresponding annealing temperatures required for crystallization are confirmed by investigating the diffraction patterns and micro-morphologies. The co-alloying of Al and Ga compositions controllably changes the lattice constant and impacts the grain growth. The crystal-field splitting of doped Er3+ ions is also modified, manifesting different electroluminescence (EL) spectra that also indicate the crystallization of garnet matrices. The EL performance of a device based on the Y3Al2Ga3O12 nanofilm (1.39 at% Er dopant) annealed at 900 °C is improved due to the adjustment of morphology and microstructural perturbations that are beneficial for radiative transition. The optimal EL device exhibits a low onset voltage of ∼25 V and a maximum external quantum efficiency of 3.29%. The excitation cross-section under electrical pumping is estimated to be 1.18 × 10-15 cm2. The carrier transport of these co-alloyed Er-YAGG devices conforms to the Poole-Frenkel mechanism. Both the EL decay lifetime and the device operation time increase with the incorporation of Ga within the Er-YAGG nanofilms. These Er-YAGG devices with tunable optoelectronic properties manifest promising potential for the engineering of light sources compatible with CMOS technology.

Abundances of siderophile elements in H-chondrite metal grains: Implications for the origin of metal in unequilibrated ordinary chondrites

Understanding the evolution of metal in the protoplanetary disk is necessary to constrain the first steps of metal-silicate segregation and the early stages of the evolution of the protoplanetary disk. We measured the siderophile elemental compositions (PGE, Ni, Co, Fe, Cu, Ga, Ge) of individual metal grains in H ordinary chondrites by laser ablation inductively coupled plasma mass spectrometry to investigate their formation. We analyzed unequilibrated ordinary chondrites (H3) to constrain processes affecting the metal before accretion, and inferred the effects of metamorphism by comparing their elemental compositions to those of equilibrated chondrites (H4–H6). Our results highlight large variations of refractory (Re, Os, W, Ir, Ru, Mo, Pt) and moderately volatile siderophile element (Pd, Au, Ga, Ge) concentrations among metal grains in H3 samples that permit to classify them according to their Ge/Ir ratios and HSE contents. These intergrain variations are progressively homogenized in H4–H6 samples due to their increasing degrees of metamorphism. To constrain the origin of the metal, we modeled its evolution during melting and crystallization. Our melting model of a single metallic precursor containing 1.5 wt% C and up to 12 wt% S reproduces well the observed range of siderophile element compositions in the metal. Metal grains show a range of W, Mo, and Ga compositions that we interpret to reflect various local (grain-scale) oxidation states during the melting event(s) due to the heterogeneous distribution of various oxidizing components within the precursors. The very similar HSE compositions of H and L/LL metal grains suggests that the variations of bulk metal abundance and HSE concentrations observed among the different classes of ordinary chondrites (H, L, LL) result from the heterogeneous physical distribution of a relatively chemically homogeneous metal component among OC parent bodies, and not from a chemical (sensu lato) gradient between H and LL chondrites.