Abstract
CuGaSe2 nanorods has been synthesized through chemical bath deposition method using PVP(polyvinylpyrrolidone) as capping agent. Formation of CuGaSe2 nanorods was confirmed by SEM and TEM analysis. A systematic electrical study has been done on CuGaSe2 nanostructure by changing the Cu to Ga(%) composition ratio from CuSe2 to GaSe nanostructure. I-V characteristics showed that CuGaSe2 nanorods exhibit a negative differential resistance(NDR) region and their peak/valley ratio increases with Ga(%) composition. The occurrence of the NDR region is due to the electron tunneling through the potential barrier of Cu/CuGaSe2 interface. The increase in peak current in NDR region in CuGaSe2 nanorods with the increase in Ga(%) makes them suitable application in building oscillator and memory devices.
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