Future Power Electronics Research Articles

21801 沸騰冷却の次世代パワーエレクトロニクスへの応用について(明日に向けた熱と物質移動の新展開(1),OS.6 明日に向けた熱と物質移動の新展開)

21801 沸騰冷却の次世代パワーエレクトロニクスへの応用について(明日に向けた熱と物質移動の新展開(1),OS.6 明日に向けた熱と物質移動の新展開)

Design Criteria of High-Voltage Lateral RESURF JFETs on 4H-SiC

Integrated power electronics on SiC have great potential in future power electronics applications. In this paper, a novel vertical channel lateral junction field-effect transistor structure with reduced surface electric field effect is proposed for the first time on 4 H-SiC to address existing challenges in lateral power devices on SiC. Based on an experimentally proven channel design, the detailed design procedure of such a device has been investigated. Design criteria to optimize device forward blocking as well as conduction characteristics are studied. Parameter tolerance and design windows are discussed considering practical issues in device fabrication. Designs that will lead to an optimized tradeoff between device breakdown voltage and specific on-resistance are shown. With an 8-/spl mu/m-long drift region, a 1535-V breakdown voltage and 3.24 m/spl Omega//spl middot/cm/sup 2/ specific on-resistance can be achieved. This represents a figure-of-merit of 737 MW/cm/sup 2/, about 100 times higher than that of the best normally off lateral power devices reported in the literature. The proposed device can be an attractive candidate for power integrated circuit on SiC.

The Future of Electronic Power Processing and Conversion

At a workshop held on the Aeolian Islands in Sicily during May 2004 a group of academic and industry engineers from all over the world discussed the medium-and long-term future of power electronics and its applications in specific areas. The following main issues were identified and discussed. - The demand is not for power electronic solutions but for system integration of electronic power processing. A more multidisciplinary approach is needed. - We will witness a proliferation of energy storage in systems. The technology is in place and the improvement in system performance makes it worthwhile. - A large penetration of power electronics into power systems will happen within the next 25-30 years. The main transmission grid will not be affected. The power electronics development will be in distributed generation and in the loads. - The success of the integrated starter/generator, hybrid or electric cars depends on political decisions more than on technological advances. However, the success of a recent Japanese hybrid car and the cost of oil could trigger the critical momentum for large-scale use of power electronics in automotive applications. - We are moving toward standardized power supply building blocks for computers and other applications. The main push is for lower cost, and production technology becomes the important issue. - Demands for improved performance in a diversity of applications will stimulate R&D in power electronics in future. Intelligent control and energy management will come easily. Thermal and passive component integration is equally important and will require attention.

Silicon carbide benefits and advantages for power electronics circuits and systems

Silicon offers multiple advantages to power circuit designers, but at the same time suffers from limitations that are inherent to silicon material properties, such as low bandgap energy, low thermal conductivity, and switching frequency limitations. Wide bandgap semiconductors, such as silicon carbide (SiC) and gallium nitride (GaN), provide larger bandgaps, higher breakdown electric field, and higher thermal conductivity. Power semiconductor devices made with SiC and GaN are capable of higher blocking voltages, higher switching frequencies, and higher junction temperatures than silicon devices. SiC is by far the most advanced material and, hence, is the subject of attention from power electronics and systems designers. This paper looks at the benefits of using SiC in power electronics applications, reviews the current state of the art, and shows how SiC can be a strong and viable candidate for future power electronics and systems applications.

The Future of Power Electronics

The Future of Power Electronics