Thermal oxidation has been widely adopted in the fabrication process of silicon solar cells. In this paper, we investigate the effect of thermal oxidation on the performance of passivated emitter and rear cells (PERC) after the diffusion process. It is found that the application of a diffusion furnace for post-oxidation results in the re-doping of phosphorus, which affects the minority carrier lifetime and implied Voc. In comparison, the use of an annealing furnace for post-oxidation brings an improvement of electrical properties of solar cells because of the gettering effect. Furthermore, the increase in thickness of the oxide layer mitigates the laser-induced damage during the laser doping process, which is beneficial for the enhancement of cell efficiency. Batch data shows that post-oxidation using an annealing furnace leads to an absolute efficiency improvement by 0.1%.
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