Quantum Functional Devices Research Articles

Negative Differential Resistance in Single‐Molecule Junctions Based on Heteroepitaxial Spherical Au/Pt Nanogap Electrodes

AbstractSingle‐molecule junctions exploit the internal structure of molecular orbitals to construct a new class of functional quantum devices. The demonstration of negative differential resistance (NDR) in single‐molecule junctions is direct evidence of quantum mechanical tunneling through a molecular orbital. Here, a pronounced NDR effect is reported with a peak‐to‐valley ratio of 30.1 on a single‐molecule junction of π‐conjugated quinoidal‐fused oligosilole derivatives, Si2 × 2, embedded between the unique electroless gold‐plated heteroepitaxial spherical Au/Pt nanogap electrodes. This NDR feature persists in a consecutive endurance test of 180 current traces. the thermally stable NDR effects in the Si2 × 2 single‐molecule junctions between 9 and 300 K are demonstrated. The density functional theory calculations under electric fields indicate that the NDR effect can be ascribed to the bias‐dependent resonant tunneling transport via the polarized HOMO, which has asymmetrically changed electrode coupling with increased bias voltages. The results confirm a promising electrical platform for constructing functional quantum devices at the single‐molecule level.

Engineering multiform quantum state transfers and topological devices in a splicing Su–Schrieffer–Heeger chain

We propose to implement the various kinds of topological quantum state transfers (QSTs) in a splicing Su–Schrieffer–Heeger (SSH) chain, where the transfer forms vary with the introduction of the on-site potential and are distinguished by different output ports. The splicing SSH chain without the on-site potential shows an interface symmetry in chain configuration and supports a zero-energy gap state to realize a symmetric state transfer from the central site to the two ends with equal probabilities. After introducing the on-site potential on one end or two ends, we further obtain two asymmetric versions of the splicing SSH chain. The existence of the on-site potential leads to the transformation of the zero-energy gap state into a nonzero gap state, and the nonzero gap state exhibits different distribution characteristics in two asymmetric versions. Accordingly, three QST channels with different forms in a splicing SSH chain are designed, each of which possesses the robustness against the disorder of the couplings and the inaccuracy of the evolution time. In addition, we demonstrate the scalability of a multiform QST protocol with high fidelity. The protocol with different transfer forms is expected to realize diverse functional quantum devices, which effectively improves the utilization of a splicing SSH chain and economizes the physical resource.

Operational Markovianization in randomized benchmarking

A crucial task to obtain optimal and reliable quantum devices is to quantify their overall performance. The average fidelity of quantum gates is a particular figure of merit that can be estimated efficiently by randomized benchmarking (RB). However, the concept of gate-fidelity itself relies on the crucial assumption that noise behaves in a predictable, time-local, or so-called Markovian manner, whose breakdown can naturally become the leading source of errors as quantum devices scale in size and depth. We analytically show that error suppression techniques such as dynamical decoupling (DD) and Pauli-twirling can operationally Markovianize RB: (i) fast DD reduces non-Markovian RB to an exponential decay plus longer-time corrections, while on the other hand, (ii) Pauli-twirling generally does not affect the average, but (iii) it always suppresses the variance of such RB outputs. We demonstrate these effects numerically with a qubit noise model. Our results show that simple and efficient error suppression methods can simultaneously tame non-Markovian noise and allow for standard and reliable gate quality estimation, a fundamentally important task in the path toward fully functional quantum devices.

Surface doping manipulation of the insulating ground states in Ta2Pd3Te5 and Ta2Ni3Te5

Abstract Manipulating emergent quantum phenomena is a key issue for understanding the underlying physics and contributing to possible applications. Here we study the evolution of insulating ground states of Ta2Pd3Te5 and Ta2Ni3Te5 under in-situ surface potassium deposition via angle-resolved photoemission spectroscopy. Our results confirm the excitonic insulator character of Ta2Pd3Te5. Upon surface doping, the size of its global gap decreases obviously. After a deposition time of more than 7 min, the potassium atoms induce a metal–insulator phase transition and make the system recover to a normal state. In contrast, our results show that the isostructural compound Ta2Ni3Te5 is a conventional insulator. The size of its global gap decreases upon surface doping, but persists positive throughout the doping process. Our results not only confirm the excitonic origin of the band gap in Ta2Pd3Te5, but also offer an effective method for designing functional quantum devices in the future.

Robust beam splitter with fast quantum state transfer through a topological interface

The Su–Schrieffer–Heeger (SSH) model, commonly used for robust state transfers through topologically protected edge pumping, has been generalized and exploited to engineer diverse functional quantum devices. Here, we propose to realize a fast topological beam splitter based on a generalized SSH model by accelerating the quantum state transfer (QST) process essentially limited by adiabatic requirements. The scheme involves delicate orchestration of the instantaneous energy spectrum through exponential modulation of nearest neighbor coupling strengths and onsite energies, yielding a significantly accelerated beam splitting process. Due to properties of topological pumping and accelerated QST, the beam splitter exhibits strong robustness against parameter disorders and losses of system. In addition, the model demonstrates good scalability and can be extended to two-dimensional crossed-chain structures to realize a topological router with variable numbers of output ports. Our work provides practical prospects for fast and robust topological QST in feasible quantum devices in large-scale quantum information processing.

Direct Optical Probe of Magnon Topology in Two-Dimensional Quantum Magnets.

Controlling edge states of topological magnon insulators is a promising route to stable spintronics devices. However, to experimentally ascertain the topology of magnon bands is a challenging task. Here we derive a fundamental relation between the light-matter coupling and the quantum geometry of magnon states. This allows us to establish the two-magnon Raman circular dichroism as an optical probe of magnon topology in honeycomb magnets, in particular of the Chern number and the topological gap. Our results pave the way for interfacing light and topological magnons in functional quantum devices.

Design and implementation of ECC combined with OPT encryption algorithm

【Objective】 Combining ECC and OPT, a novel elliptic curve algorithm was proposed, which can effectively resist the reverse calculation of quantum computer and ensure the security of private key. 【Method】 On the basis of elliptic curve encryption algorithm, OPT algorithm was introduced to protect the private key. 【Result】 The signature and verification of messages can be successfully completed by the repeated algorithm on Python platform. Finally, the algorithm is proved to be safe under Shor algorithm and quantum computer attack through algorithm theory. 【Conclusion】 ECC combined with OPT encryption algorithm can effectively resist reversible computation of functional quantum devices, prevent eavesdroppers from forging signatures, and ensure the security of modern public key cryptosystems.

Modulation of Spin Dynamics in 2D Transition-Metal Dichalcogenide via Strain-Driven Symmetry Breaking.

Transition metal dichalcogenides (TMDs) possess intrinsic spin–orbit interaction (SOI) with high potential to be exploited for various quantum phenomena. SOI allows the manipulation of spin degree of freedom by controlling the carrier's orbital motion via mechanical strain. Here, strain modulated spin dynamics in bilayer MoS2 field‐effect transistors (FETs) fabricated on crested substrates are demonstrated. Weak antilocalization (WAL) is observed at moderate carrier concentrations, indicating additional spin relaxation path caused by strain fields arising from substrate crests. The spin lifetime is found to be inversely proportional to the momentum relaxation time, which follows the Dyakonov–Perel spin relaxation mechanism. Moreover, the spin–orbit splitting is obtained as 37.5 ± 1.4 meV, an order of magnitude larger than the theoretical prediction for monolayer MoS2, suggesting the strain enhanced spin‐lattice coupling. The work demonstrates strain engineering as a promising approach to manipulate spin degree of freedom toward new functional quantum devices.

LnCu3(OH)6Cl3 (Ln = Gd, Tb, Dy): Heavy lanthanides on spin-1/2 kagome magnets* *Project supported by the Program for Guangdong Introducing Innovative and Entrepreneurial Teams (Grant No. 2017ZT07C062), Shenzhen Key Laboratory of Advanced Quantum Functional Materials and Devices (Grant No. ZDSYS20190902092905285), and Guangdong Basic and Applied Basic Research Foundation (Grant No. 2020B1515120100). L. Wang acknowledges the support of China Postdoctoral Science

The spin-1/2 kagome antiferromagnets are key prototype materials for studying frustrated magnetism. Three isostructural kagome antiferromagnets LnCu3(OH)6Cl3 (Ln = Gd, Tb, Dy) have been successfully synthesized by the hydrothermal method. LnCu3(OH)6Cl3 adopts space group and features the layered Cu-kagome lattice with lanthanide Ln3+ cations sitting at the center of the hexagons. Although heavy lanthanides (Ln = Gd, Tb, Dy) in LnCu3(OH)6Cl3 provide a large effective magnetic moment and ferromagnetic-like spin correlations compared to light-lanthanides (Nd, Sm, Eu) analogues, Cu-kagome holds an antiferromagnetically ordered state at around 17 K like YCu3(OH)6Cl3.

Probing coherence and noise tolerance in discrete-time quantum walks: Unveiling self-focusing and breathing dynamics

The sensitivity of quantum systems to external disturbances is a fundamental problem for the implementation of functional quantum devices, quantum information, and computation. Based on remarkable experimental progress in optics and ultracold gases, we study the consequences of a short-time (instantaneous) noise while an intensity-dependent phase acquisition is associated with a qubit propagating on an $N$ cycle. By employing quantum coherence measures, we report emerging unstable regimes in which quantum walks arise, such as self-focusing and breathing dynamics. Our numerical and analytical results unveil appropriate settings which favor the stable regime, with the asymptotic distribution surviving for weak nonlinearities and disappearing in the thermodynamic limit with $1/N$. The diagram showing the threshold between different regimes reveals the quantum gates close to Pauli-Z as more noise tolerant. As we move towards the Pauli-X quantum gate, such aptness dramatically decreases and the threshold to the self-focusing regime becomes almost unavoidable. Quantum gates close to Hadamard exhibit an unusual aspect, in which an increment of the nonlinear strength can remove the dynamics from the self-focusing regime.

Exact classical noise master equations: Applications and connections

All quantum systems are subject to noise and imperfections due to stray fields, inhomogeneities or drifting experimental controls. An understanding of the effects of noise and decoherence is critical to the progress towards fully functional quantum devices. In this perspective, we focus on noise in quantum systems which are modelled by a dynamic stochastic parameter in the Hamiltonian. We will outline exact evolution equations describing the ensemble average dynamics for a variety of common noise types and their connections. We will also highlight an approximate evolution equation valid in the weak noise limit for an arbitrary classical stochastic field. This framework should serve as a starting point for identifying signatures of differing noise types and optimisation of robust control protocols.

Investigation of artificial quantum structures constructed by atom manipulation

The atom manipulation technique based on scanning tunneling microscope refers to a method of relocating single atoms or molecules on a certain surface at atomic accuracy by using an atomically sharp tip, which is a unique and powerful tool for studying the quantum physics and prototype quantum devices on a nanometer scale. This technique allows us to build artificial structure atom-by-atom, thus some desired interesting quantum structures which are difficult to grow or fabricate by conventional methods could be realized, and unique quantum states, spin order, band structure could be created by the fine tuning of the structural parameters like lattice constant, symmetry, periodicity, etc. Combined with nanosecond scale time domain electric measurement and autonomous control technique, the atom manipulation would be useful in exploring the atomic precision prototype quantum devices, and providing some valuable knowledge for future electronics. In this review, we introduce the atom manipulation technique and related milestone research achievements and latest progress of artificial quantum structures, including electronic lattices with exotic quantum states on Cu(111), quantum dots on III-V semiconductors, magnetic structures with tunable spin order, structures for quantum information storage and processing, prototype Boolean logic devices and single atom devices. The STM lithography and autonomous atom manipulation are discussed as well. With such improvements, this technique would play more important roles in developing the functional quantum devices in future.

Quantum Spin-Wave Materials, Interface Effects and Functional Devices for Information Applications

With the continuous miniaturization of electronic devices and the increasing speed of their operation, solving a series of technical issues caused by high power consumption has reached an unprecedented level of difficulty. Fortunately, magnons (the quanta of spin waves), which are the collective precession of spins in quantum magnetic materials, making it possible to replace the role of electrons in modern information applications. In the process of information transmission, nano-sized spin-wave devices do not transport any physical particles; therefore, the corresponding power consumption is extremely low. This review focuses on the emerging developments of the spin-wave materials, tunable effects, and functional devices applications. In the materials front, we summarize the magnetic properties and preparation characteristics of typical insulating single-crystalline garnet films or metallic alloy films, the development of new spin-wave material system is also introduced. Afterward, we introduce the emerging electric control of spin-wave effects originating from the interface transitions, physical or chemical, among these films including, voltage-controlled magnetic anisotropy, magneto-ionic transport, electric spin-torque, and magnon-torque. In the functional devices front, we summarize and elaborate on the low dispassion information processing devices and sensors that are realized based on spin waves.

Localized spin-orbit polaron in magnetic Weyl semimetal Co3Sn2S2

The kagome lattice Co3Sn2S2 exhibits the quintessential topological phenomena of a magnetic Weyl semimetal such as the chiral anomaly and Fermi-arc surface states. Probing its magnetic properties is crucial for understanding this correlated topological state. Here, using spin-polarized scanning tunneling microscopy/spectroscopy (STM/S) and non-contact atomic force microscopy (nc-AFM) combined with first-principle calculations, we report the discovery of localized spin-orbit polarons (SOPs) with three-fold rotation symmetry nucleated around single S-vacancies in Co3Sn2S2. The SOPs carry a magnetic moment and a large diamagnetic orbital magnetization of a possible topological origin associated relating to the diamagnetic circulating current around the S-vacancy. Appreciable magneto-elastic coupling of the SOP is detected by nc-AFM and STM. Our findings suggest that the SOPs can enhance magnetism and more robust time-reversal-symmetry-breaking topological phenomena. Controlled engineering of the SOPs may pave the way toward practical applications in functional quantum devices.

Antiresonance and its application in tri-quantum-dot systems

Antiresonance and its application in triple-quantum-dot systems are studied theoretically using nonequilibrium Green’s function method. The presence or absence of antiresonance point can be used to determine whether quantum dot impurity exists in the system. For a tri-quantum-dot ring, the conversion between 0 and 1 for the conductance can be realized by adjusting the energy levels of quantum dots, which makes the system applicable as a quantum switch. The coupling strength can be measured according to the energy level of the antiresonance point. Once the intradot Coulomb interactions are taken into account, three new Fano antiresonances emerge in the conductance spectrum. Under the action of the magnetic field, two antiresonance points disappear simultaneously. Our work sheds lights onto the design and implementation of new quantum functional devices for electronic measurements.

Excitation transport in quasi-one-dimensional quantum devices: a multiscale approach with analytical time-dependent non-equilibrium Green’s function

Under the wide-band limit approximation for electrodes, this research proposes analytical time-dependent non-equilibrium Green’s function (TD-NEGF) formulae to investigate dynamical functionalities of quasi-one-dimensional quantum devices, especially for (microwave) photon-assisted transports. Together with a multiscale approach by lumped element model, we also study the effects of transiently-transferring charges to reflect the non-conservation of charges in open quantum systems, and implement numerical calculations in hetero-junction systems composed of functional quantum devices and electrode-contacts (to the environment). The results show that (i) the current calculation by the analytical algorithms, versus those by conventional numerical integrals, presents superior numerical stability on a large-time scale, (ii) the correction of charge transfer effects can better clarify non-physical transport issues, e.g. the blocking of AC signaling under the assumption of conventional constant hamiltonian, (iii) the current in the long-time limit validly converges to the steady value obtained by standard time-independent density functional calculations, and (iv) the occurrence of the photon-assisted transport is well-identified.

Compounding Plasmon⁻Exciton Strong Coupling System with Gold Nanofilm to Boost Rabi Splitting.

Various plasmonic nanocavities possessing an extremely small mode volume have been developed and applied successfully in the study of strong light-matter coupling. Driven by the desire of constructing quantum networks and other functional quantum devices, a growing trend of strong coupling research is to explore the possibility of fabricating simple strong coupling nanosystems as the building blocks to construct complex systems or devices. Herein, we investigate such a nanocube-exciton building block (i.e. AuNC@J-agg), which is fabricated by coating Au nanocubes with excitonic J-aggregate molecules. The extinction spectra of AuNC@J-agg assembly, as well as the dark field scattering spectra of the individual nanocube-exciton, exhibit Rabi splitting of 100–140 meV, which signifies strong plasmon–exciton coupling. We further demonstrate the feasibility of constructing a more complex system of AuNC@J-agg on Au film, which achieves a much stronger coupling, with Rabi splitting of 377 meV. This work provides a practical pathway of building complex systems from building blocks, which are simple strong coupling systems, which lays the foundation for exploring further fundamental studies or inventing novel quantum devices.

On-chip excitation of single germanium vacancies in nanodiamonds embedded in plasmonic waveguides

Monolithic integration of quantum emitters in nanoscale plasmonic circuitry requires low-loss plasmonic configurations capable of confining light well below the diffraction limit. We demonstrated on-chip remote excitation of nanodiamond-embedded single quantum emitters by plasmonic modes of dielectric ridges atop colloidal silver crystals. The nanodiamonds were produced to incorporate single germanium-vacancy (GeV) centres, providing bright, spectrally narrow and stable single-photon sources suitable for highly integrated circuits. Using electron-beam lithography with hydrogen silsesquioxane (HSQ) resist, dielectric-loaded surface plasmon polariton waveguides (DLSPPWs) were fabricated on single crystalline silver plates to contain those of deposited nanodiamonds that are found to feature appropriate single GeV centres. The low-loss plasmonic configuration enabled the 532-nm pump laser light to propagate on-chip in the DLSPPW and reach to an embedded nanodiamond where a single GeV centre was incorporated. The remote GeV emitter was thereby excited and coupled to spatially confined DLSPPW modes with an outstanding figure-of-merit of 180 due to a ~six-fold Purcell enhancement, ~56% coupling efficiency and ~33 μm transmission length, thereby opening new avenues for the implementation of nanoscale functional quantum devices.

Robust population inversion by polarization selective pulsed excitation.

The coherent state preparation and control of single quantum systems is an important prerequisite for the implementation of functional quantum devices. Prominent examples for such systems are semiconductor quantum dots, which exhibit a fine structure split single exciton state and a V-type three level structure, given by a common ground state and two distinguishable and separately excitable transitions. In this work we introduce a novel concept for the preparation of a robust inversion by the sequential excitation in a V-type system via distinguishable paths.

Atomic delocalization as a microscopic origin of two-level defects in Josephson junctions

Identifying the microscopic origins of decoherence sources prevalent in Josephson junction (JJ) based circuits is central to their use as functional quantum devices. Focussing on so called ‘strongly coupled’ two-level defects, we construct a theoretical model using the atomic position of the oxygen which is spatially delocalized in the oxide forming the JJ barrier. Using this model, we investigate which atomic configurations give rise to two-level behaviour of the type seen in experiments. We compute experimentally observable parameters for phase qubits and examine defect response under the effects of applied electric field and strain.