Full-wave Rectifier Circuit Research Articles

DBI 구조를 이용한 35[W] 세라믹 메탈 할라이드 램프용 전자식 안정기의 설계

Ceramic metal halide lamps have been widely used due to long lifetime, high luminous efficiency and good colour rendering. 35[W] ceramic metal halide lamps has very different characteristics between ignition state and steady state. The developed electronic ballast is satisfied to both ignition state and steady state characteristics by using a micro-controller. The proposed electronic ballast is consists of EMI filter, Full-wave rectifier, Active PFC, DBI(Dual Buck Inverter), Igniter and control circuit. It enables to supply both low-frequency rectangular wave voltage and current to the lamp by using DBI(Dual Bcuk Inverter) structure.

A new full-wave rectifier circuit employing single dual-X current conveyor

In this study, a novel voltage-mode full-wave rectifier with high-input impedance using a dual-X second-generation current conveyor and three enhancement-type n-channel metal-oxide semiconductor field-effect transistors (MOSFETs) is introduced. The proposed circuit does not employ any passive elements, and is simulated using SPICE program with level 49, 0.25 µm TSMC CMOS technology parameters to confirm the theory and exhibit the performance of the circuit.

Full-wave rectifier realization using only two CCII+s and NMOS transistors

In this paper, a voltage-mode full-wave rectifier employing plus-type second-generation current conveyors (CCII+s) and enhancement-mode n-channel metal-oxide semiconductor field-effect transistors (MOSFETs) is proposed. The presented circuit requires no passive components, and is suitable for high frequency applications. The proposed full-wave rectifier circuit is simulated using HSPICE to verify the theoretical analysis.

Piezoelectric Micro-Power Generation Interface Circuits

New power conversion circuits to interface to a piezoelectric micro-power generator have been fabricated and tested. Circuit designs and measurement results are presented for a half-wave synchronous rectifier with voltage doubler, a full-wave synchronous rectifier and a passive full-wave rectifier circuit connected to the piezoelectric micro-power generator. The measured power efficiency of the synchronous rectifier and voltage doubler circuit fabricated in a 0.35-/spl mu/m CMOS process is 88% and the output power exceeds 2.5 /spl mu/W with a 100-k/spl Omega/, 100-nF load. The two full-wave rectifiers (passive and synchronous) were fabricated in a 0.25-/spl mu/m CMOS process. The measured peak power efficiency for the passive full-wave rectifier circuit is 66% with a 220-k/spl Omega/ load and supplies a peak output power of 16 /spl mu/W with a 68-k/spl Omega/ load. Although the active full-wave synchronous rectifier requires quiescent current for operation, it has a higher peak efficiency of 86% with an 82-k/spl Omega/ load, and also exhibits a higher peak power of 22 /spl mu/W with a 68-k/spl Omega/ load which is 37% higher than the passive full-wave rectifier.

Radio frequency rectifiers based on organic thin-film transistors

One important technical hurdle that has to be overcome for using organic transistors in radio-frequency identification tags is for these devices to operate at rf frequencies (typically 13.56MHz) in the front end. It was long thought that organic transistors are too slow for this. In this letter we show that organic transistor based full-wave rectifier circuits utilizing pentacene, a p-channel organic semiconductor, can operate at this frequency with a useful efficiency. In order to achieve such high-frequency operation, we make use of the nonquasistatic state of the transistors.

Flexible Polymer Thin-Film Transistor Device Structures And Processes For 13.56 MHz RF Rectifier Circuits

ABSTRACTPolymeric thin-film transistors (TFTs) have been proposed for several applications including displays, electronic paper, chemical sensors, and radio-frequency identification (RFID) tags. One important technical hurdle that has to be overcome for using organic transistors in RFID tags is for these devices to operate at RF frequencies (typically 13.56 MHz) in the front end. It was long thought that conjugated polymer transistors are too slow for this. In this presentation we will demonstrate that polymer transistor based full-wave rectifier circuits utilizing a polythiophene, a p-channel semiconductor, can operate at this frequency with a useful efficiency. In order to achieve such high-frequency operation, we make use of the non-quasi static (NQS) state of the transistors. Bottom gate and top gate structures are explored and a comparison is made between the observed electrical properties. These circuits are fabricated on PEN (polyethylenenapthalate) or PET (polyethylene-terepthalate) substrates using a spin on dielectric. Gate, source and drain contacts are defined photolithographically using evaporated gold as the metal. Field-effect mobilities in the range of 0.02 and 0.2 cm2/Vs that equal or exceed the highest reported among the ones employing similar geometries on plastic substrates are easily obtained in these systems. In order for NQS based rectification to take place the carrier velocity in a 2 micrometer channel length device needs to be more than 2×104 cm/s. This would correspond to a mobility of 0.1cm2/V-s at a field of 105 V/cm. The rectifiers were based on a 4-transistor full-wave design. A coil (transformer secondary) drives the AC inputs in differential mode. The lower diode connected transistors in a manner similar to the half-wave rectifier define the DC voltage level of the two AC input signals. The two upper transistors are connected as switches and are used to move current from the AC inputs to the positive DC output. The capacitor is used to hold the peak voltage level supplied by the coil through the switch-connected devices. The voltage rectification efficiency is relatively high being as much as 45% at 13.56 MHz. This is among the fastest polymer transistor circuit of any kind demonstrated to date.

Printed Electrochemical Devices Using Conducting Polymers as Active Materials on Flexible Substrates

This paper reports some of our initial works in pursuit of a simple and low-cost method of fabricating all-organic electrochemical diodes, triodes, and transistors on flexible plastic or paper substrates. Conducting polymer poly(3,4-ethylenedioxythiophene) poly(styrene sulfonate) (PEDOT : PSS), utilized as an active component, is deposited by spin-coating or printing techniques. The devices are directly fabricated from design without the need for masks, patterns, or dies. The output characteristics of both half-wave and full-wave rectifier circuits from two-terminal diodes show stable performances at frequencies below 5 Hz. In three-terminal tunable triodes, threshold voltage can be tuned in the range between 0.25 and 1.6 V. In four-terminal transistors, ambipolar operation function can be realized in one single device. I/sub ON//I/sub OFF/ current ratios of 10/sup 3/-10/sup 4/ have been achieved in the triode and transistor at operating voltages below 3 V. In addition, the device applications in electrochromic displays, logical circuits, as well as the switching speed of the circuits and device stability, are discussed.

A low-voltage wide-band CMOS precision full-wave rectifier

A simple integrable circuit for implementing a precision full-wave rectifier circuit in CMOS technology, which can be operated from a low-voltage power supply, is described. The realization method is based on the use of a MOS class AB configuration to improve the high frequency performance. The circuit exhibits a very sharp corner in the dc transfer characteristic. Simulation results showing the performance of the proposed circuit are also presented.

Direct-Write Polymer Diodes

ABSTRACTConjugated polymer Schottky diodes have been directly written onto glass and alumina substrates. The rectifying contact was made between the p-type semiconductor poly(3,4-ethylene-dioxythiophene) doped with polystyrene sulfonic acid and Zn. The devices exhibit rectification ratios in the range of 102:1 to 103:1 at biases of ±1 V and ±10 V, respectively. The devices demonstrate rectification at frequencies up to 250 kHz. A full-wave bridge rectifier circuit written onto a glass substrate converts ac to dc up to 250 kHz and ±5 V.

A high-performance full-wave rectifier circuit

A new circuit that enables basic operational amplifiers (op amps) such as the LM741 to produce precise full-wave rectification for frequencies up to and exceeding 100 kHz without waveform distortion is presented. The circuit is based on a standard op amp precise rectifier that is modified by the inclusion of a current conveyor to improve the rectifying process.

Current-mode precision rectification

This paper describes a simple and versatile current-mode full-wave precision rectifier circuit using AD844 from Analog Devices. The proposed scheme avoids the use of closely matched resistors and matched current mirrors. The circuit is easy to design and construct from readily available low-cost components and provides excellent precision rectifier performance over a wide band and wide input voltage range. Experimental results are included.

The Fundamentals of Power Factor Correction

The fundamentals of power factor correction The fundamental issues of power factor analysis for non-sinusoidal waveforms are described. A full-wave rectifier circuit is analysed and original approximations are derived for voltage ripple, peak diode current and input power factor. A power factor correction technique, based on a switching mode power supply, is presented.

Computer analysis of multi-port operation using analogue variables

The full capabilities of electrical circuit analysis programs can be utilized in evaluating the performance of multi-port systems by defining analogous conjugate port variables. These variables represent intensive (across) and extensive (through) variables such that their product represents a universal system quantity such as energy or power. A three-port electro-mechanical-thermal system is used as an example. This system consists of a full-wave rectifier circuit driving a permanent-magnet DC motor. Mechanically, the motor is represented by inertia, friction, stiction (breakaway friction), step-up speed gear and a nonlinear fan load. The thermal equivalent circuit tracks the thermal behavior in time and includes thermal resistance, thermal capacitance and thermal power sources.

Analysis of Parametric Transformer with Rectifier Load

This paper describes a push-pull parametric transformer constructed using a pair of orthogonal-cores. The operating characteristics of the parametric transformer with a rectifier load were analyzed based on SPICE simulations. The analysis results show good agreement with experiment. It was found that the input surge current of the full-wave rectifier circuit with a smoothing capacitor can be compensated by the parametric transformer. Use of the parametric transformer as a power stabilizer is anticipated owing to its various functions, such as for voltage regulation and overload protection.

整流器負荷を有するパラメトリック変圧器の動作解析

This paper describes a push-pull parametric transformer constructed using a pair of orthogonal-cores. The operating characteristics of the parametric transformer with a rectifier load were analyzed based on SPICE simulations. The analysis results show good agreement with experiment. It was found that the input surge current of the full-wave rectifier circuit with a smoothing capacitor can be compensated by the parametric transformer. Use of the parametric transformer as a power stabilizer is anticipated owing to its various functions, such as for voltage regulation and overload protection.

A Mathematical Theory of Full-wave Rectification

The results of a systematic asymptotic analysis of two basic full-wave rectifier circuits are presented in this paper. The physical circuits are modelled by two systems of nonlinear differential equations which are both singularly perturbed in the limit ωRC→∞. Here ω is the angular frequency of the source, R is the resistance of the load, and C is the capacitance of the circuit. The method of multiple scales is used to construct the asymptotic behaviour of the solutions as ωRC→∞. The results contain transient, ripple, and steady-state information. The latter two components simplify and yield the standard results when the diodes' forward impedance is small. The analysis of more complicated full-wave rectifiers follows from the procedure described.

Maximum Power Transfer for Full-Wave Rectifier Circuits

An analysis is done to determine the maximum power transfer conditions for full-wave rectifier circuits. Potential applications noted are implanted medical instruments, inductive power transfer to weapons, power transfer using space reflectors, and power generation in space. Three types of series impedances are considered: resistive/inductive (RL), resistive/capacitive (RC), and resistive/inductive/capacitive (RLC). The optimum ratio of ac-to-dc voltage output is determined for each type. For the case that involves all three impedance types, the optimum turning condition is also determined. The differential equations describing the circuits are solved in nondimensional form. The solutions involve partial differential equations, closed-form relationships, and simultaneous equations that are solved by numerical methods. The optimum ratio of peak ac-to-dc voltage ranges from 2.0 to 2.8, depending upon the circuit. The optimum turning differs significantly from the usual resonant conditions, especially for low Q.

Versatile precision fullwave rectifier

The interconnection of a differential voltage-to-current convertor and a current-mirror facilitates the design of a novel, precision fullwave-rectifier circuit, which avoids the use of closely matched resistors, has a large input voltage range and an output terminal which can be connected to a chosen direct reference voltage.

交流分路出力電流を負荷に並列に加える全波整流回路の解析

交流分路出力電流を負荷に並列に加える全波整流回路の解析

A simple electrophoretic apparatus for rapid hemoglobin screening.

A simple electrophoresis cell has been designed for use with a recently described method for rapid hemoglobin screening on cellulose acetate. The cell has a built-in power supply, acrylic body with fixed bridge gap, gold alloy electrodes, pilot lamp, and a safety interlock. The power supply converts alternating current from 120 volts a.c. to 250 volts pulsed d.c. by means of a step-up transformer and a full wave rectifier circuit. The construction of the cell is described in detail. The cost of materials is approximately $20.