The metal-insulator transitions of electron correlated transition metal oxides provide an attractive vector for achieving large conductance switching with minimal energy dissipation. However, given the sparse and disconnected current knowledge of neuromorphic materials, a fundamental understanding of descriptors of neuromorphic function formulated in terms of intrinsic material properties, and the influence of atomistic defects on mesoscale domain evolution in the presence of external applied fields is currently lacking. Using VO2 and M x V2O5 compounds as model systems, I will detail our efforts to develop a systematic understanding of how compositional modifications through substitutional or interstitial doping alter transformation characteristics such as the transition temperature, magnitude of switching, energy dissipation, and hysteresis.The inclusion of dopant atoms strongly modifies the free energy landscapes in terms of relative phase stabilities, transformation barriers, and pathways; thereby profoundly altering the coupling of lattice, electronic, and spin degrees of freedom in a non-trivial manner. I will particularly focus on the three distinct mechanisms: (a) discovery of diffusive dopants that provide a distinctive new way to alter the dynamics of electronic transitions; (b) cation shuttling and polaron oscillation as a means of engendering metal—insulator transitions; and (c) lattice-anharmonicity-driven mechanisms in compounds with stereochemically active lone pairs. Acknowledgements: Research supported as part of REMIND, an Energy Frontier Research Center funded by the U.S. Department of Energy (DOE), Office of Science, Basic Energy Sciences (BES), under DE-SC0023353